Datasheet BSC079N03S Datasheet (Mosfet)

Page 1
BSC079N03S G
OptiMOS™2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
1)
• Qualified according to JEDEC
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type Package Marking
BSC079N03S G PG-TDSON-8 79N03S
for target applications
product (FOM)
DS(on)
DS(on)
Product Summary
V
DS
R
DS(on),max
I
D
30 V
7.9
40 A
PG-TDSON-8
m
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt dv /dt
Gate source voltage
Power dissipation
=25 °C, unless otherwise specified
j
I
D
I
D,pulse
E
AS
TC=25 °C
T
=100 °C
C
=25 °C,
T
A
R
=45 K/W
thJA
TC=25 °C
ID=40 A, RGS=25
=40 A, VDS=24 V,
I
D
di /dt =200 A/µs,
T
=150 °C
j,max
V
GS
P
tot
TC=25 °C
=25 °C,
T
A
R
=45 K/W
thJA
Value
40 A
40
2)
3)
14.6
160
120 mJ
6 kV/µs
±20 V
60 W
2)
2.8
, T
Operating and storage temperature
T
j
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 1.91 page 1 2009-10-27
Page 2
BSC079N03S G
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom - - 2.1 K/W
top 20
Thermal resistance,
junction - ambient
Electrical characteristics, at T
R
thJA
=25 °C, unless otherwise specified
j
minimal footprint - - 62
6 cm
2
cooling area
2)
--45
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSSVGS
V
GS(th)
I
DSS
=0 V, ID=1 mA
VDS=VGS, ID=30 µA
VDS=30 V, VGS=0 V, T
=25 °C
j
30 - - V
1.2 1.6 2
- 0.1 1 µA
V
=30 V, VGS=0 V,
DS
T
=125 °C
j
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
1)
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3
I
GSS
R
DS(on)VGS
R
G
g
fs
VGS=20 V, VDS=0 V
=4.5 V, ID=40 A
=10 V, ID=40 A
V
GS
|VDS|>2|ID|R
I
=40 A
D
DS(on)max
- 10 100
- 10 100 nA
- 9.3 11.6
- 6.6 7.9
-1-
,
31 62 - S
m
Rev. 1.91 page 2 2009-10-27
Page 3
BSC079N03S G
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
3)
C
C
C
t
t
t
t
Q
Q
Q
Q
iss
oss
rss
d(on)
r
d(off)
f
gs
g(th)
gd
sw
V
=0 V, VDS=15 V,
GS
f =1 MHz
V
=15 V, VGS=10 V,
DD
=20 A, RG=2.7
I
D
=15 V, ID=20 A,
V
DD
V
=0 to 5 V
GS
- 1680 2230 pF
- 600 800
- 79 120
- 5.1 7.7 ns
- 4.2 6.3
-2131
- 3.4 5.1
- 5.3 7.0 nC
- 2.7 3.6
- 3.4 5.2
- 6.0 8.6
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q
V
Q
Q
g
plateau
g(sync)
oss
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
3)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
Q
rr
VDS=0.1 V, V
=0 to 5 V
GS
VDD=15 V, VGS=0 V
TC=25 °C
VGS=0 V, IF=40 A, T
=25 °C
j
VR=15 V, IF=IS,
di
/dt =400 A/µs
F
-1317
- 3.1 - V
-1115nC
-1318
- - 40 A
- - 160
- 0.93 1.2 V
- - 10 nC
Rev. 1.91 page 3 2009-10-27
Page 4
1 Power dissipation 2 Drain current
P
=f(TC) ID=f(TC); VGS≥10 V
tot
BSC079N03S G
70
50
60
40
50
[W]
tot
P
40
30
[A]
D
I
30
20
20
10
10
0
0 40 80 120 160
TC [°C]
0
0 40 80 120 160
TC [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
=f(VDS); TC=25 °C; D =0 Z
D
parameter: t
10
p
3
1000
=f(tp)
thJC
parameter: D =tp/T
1
10
10
limited by on-state resistance
2
100
10
DC
1
10
10
[A]
D
I
0
1
10
-1
0.1
0.1 1 10 100
10
10
-1
10
0
VDS [V]
100 µs
10
10 µs
10 ms
1
1 ms
1 µs
10
0.5
0
1
10
0.2
[K/W]
0.1
thJC
Z
0.05
-1
0.1
10
0.02
0.01
single pulse
-2
0.01
0 0 0 0 0 0
10
2
10
-6
10
-5
10
-4
tp [s]
10
-3
10
-2
10
-1
Rev. 1.91 page 4 2009-10-27
Page 5
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
=f(VDS); Tj=25 °C R
D
parameter: V
GS
=f(ID); Tj=25 °C
DS(on)
parameter: V
GS
BSC079N03S G
80
70
10 V
4.5 V
4 V
30
25
2.8 V
3 V
3.2 V
3.4 V
60
20
[A]
D
I
50
40
30
3.7 V
3.4 V
]
[m
DS(on)
R
15
10
2.8 V
3.2 V
3 V
5
0
0 1020304050
ID [A]
20
10
0
0123
VDS [V]
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
=f(VGS); |VDS|>2|ID|R
D
parameter: T
j
DS(on)max
gfs=f(ID); Tj=25 °C
3.7 V
4 V
4.5 V
10 V
80
70
60
50
40
[A]
D
I
30
20
150 °C
25 °C
10
0
012345
VGS [V]
80
70
60
50
[S]
40
fs
g
30
20
10
0
0 102030405060
ID [A]
Rev. 1.91 page 5 2009-10-27
Page 6
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
=f(Tj); ID=40 A; VGS=10 V V
DS(on)
14
=f(Tj); VGS=V
GS(th)
parameter: I
2.5
DS
D
BSC079N03S G
]
[m
DS(on)
R
12
10
98 %
8
typ
6
[V]
GS(th)
V
2
300 µA
1.5
30 µA
1
4
0.5
2
0
-60 -20 20 60 100 140 180
Tj [°C]
0
-60 -20 20 60 100 140 180
Tj [°C]
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
); VGS=0 V; f =1 MHz IF=f(VSD)
DS
4
10000
10
parameter: T
3
10
j
Ciss
3
1000
10
Coss
C [pF]
2
10
10
100
1
10
Crss
0 5 10 15 20 25 30
VDS [V]
[A]
F
I
10
10
10
10
2
1
0
-1
150 °C
25 °C
25 °C, 98%
0 0.5 1 1.5 2
VSD [V]
150 °C, 98%
Rev. 1.91 page 6 2009-10-27
Page 7
13 Avalanche characteristics 14 Typ. gate charge
V
IAS=f(tAV); RGS=25
parameter: T
j(start)
=f(Q
GS
parameter: V
); ID=20 A pulsed
gate
DD
BSC079N03S G
100
125 °C
[A]
10
AV
I
1
1 10 100 1000
100 °C
25 °C
tAV [µs]
12
10
8
[V]
6
GS
V
4
2
0
0 5 10 15 20 25
Q
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
=f(Tj); ID=1 mA
BR(DSS)
gate
15 V
6 V
24 V
[nC]
36
V
GS
34
32
30
Q
g
[V]
28
BR(DSS)
V
26
24
22
20
-60 -20 20 60 100 140 180
V
gs(th)
Q
g(th)
Q
gs
Q
sw
Q
gd
Q
gate
Tj [°C]
Rev. 1.91 page 7 2009-10-27
Page 8
Package Outline PG-TDSON-8
PG-TDSON-8: Outline
BSC079N03S G
Rev. 1.91 page 8 2009-10-27
Page 9
Package Outline
PG-TDSON-8: Tape
BSC079N03S G
Dimensions in mm
Rev. 1.91 page 9 2009-10-27
Page 10
BSC079N03S G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.91 page 10 2009-10-27
Page 11
Mouser Electronics
Authorized Distributor
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