Page 1
BSC019N02KS G
OptiMOS®2 Power-Transistor
Features
• For fast switching converters and sync. rectification
1)
• Qualified according to JEDEC
• Super Logic level 2.5V rated; N-channel
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
Type Package Marking
for target applications
product (FOM)
DS(on)
DS(on)
Product Summary
V
DS
R
DS(on),max
I
D
20 V
1.95
100 A
PG-TDSON-8
mΩ
BSC019N02KS G PG-TDSON-8 19N02KS
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt dv /dt
=25 °C, unless otherwise specified
j
I
D
I
D,pulse
E
AS
VGS=4.5 V, TC=25 °C
VGS=4.5 V, TC=100 °C
VGS=2.5 V, TC=25 °C
VGS=2.5 V, TC=100 °C
VGS=4.5 V, TA=25 °C,
R
=45 K/W
thJA
TC=25 °C
ID=50 A, RGS=25 Ω
=50 A, VDS=16 V,
I
D
di /dt =200 A/µs,
T
=150 °C
j,max
Value
100 A
100
100
95
2)
3)
30
200
800 mJ
6 kV/µs
Gate source voltage
1)
J-STD20 and JESD22
V
GS
±12 V
Rev. 1.1 page 1 2008-08-11
Page 2
Maximum ratings, at Tj=25 °C, unless otherwise specified
BSC019N02KS G
Parameter Symbol Conditions Unit
stg
TC=25 °C
=25 °C,
T
A
R
=45 K/W
thJA
2)
Power dissipation
Operating and storage temperature
P
tot
, T
T
j
Value
104 W
2.8
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
2)
- - 1.2 K/W
--45
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
=0 V, ID=1 mA
VDS=VGS, ID=350 µA
VDS=20 V, VGS=0 V,
T
=25 °C
j
V
=20 V, VGS=0 V,
DS
T
=125 °C
j
VGS=12 V, VDS=0 V
VGS=2.5 V, ID=50 A
=4.5 V, ID=50 A
V
GS
|VDS|>2|ID|R
I
=50 A
D
DS(on)max
20 - - V
0.7 0.95 1.2
--1µA
- - 100
- - 100 nA
- 2.3 3.0
- 1.6 1.95
- 1.9 -
,
100 210 - S
mΩ
Ω
Rev. 1.1 page 2 2008-08-11
Page 3
BSC019N02KS G
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
C
iss
=0 V, VDS=10 V,
V
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
4)
Q
gs
Q
g(th)
Q
gd
Q
sw
GS
f =1 MHz
V
=10 V, VGS=4.5 V,
DD
=50 A, RG=1.6 Ω
I
D
=10 V, ID=50 A,
V
DD
V
=0 to 4.5 V
GS
- 9600 13000 pF
- 2700 3600
- 410 620
-15-ns
- 187 -
-95-
-8-
- 19 25.1 nC
- 9 12.1
- 11 16.9
- 21 29.8
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q
V
Q
Q
g
plateau
g(sync)
oss
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
4)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
Q
rr
VDS=0.1 V,
V
=0 to 4.5 V
GS
VDD=10 V, VGS=0 V
TC=25 °C
VGS=0 V, IF=50 A,
T
=25 °C
j
VR=10 V, IF=50 A,
di
/dt =100 A/µs
F
- 64 85.0
- 2.0 - V
- 59 78.5 nC
-37-
- - 100 A
- - 400
- 0.8 1.2 V
- 55.6 - nC
Rev. 1.1 page 3 2008-08-11
Page 4
1 Power dissipation 2 Drain current
P
=f(TC) ID=f(TC); VGS≥4.5 V
tot
BSC019N02KS G
120
100
80
[W]
60
tot
P
40
20
0
0 40 80 120 160
TC [°C]
120
100
80
60
[A]
D
I
40
20
0
0 40 80 120 160
TC [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
=f(VDS); TC=25 °C; D =0 Z
D
parameter: t
[A]
D
I
10
10
10
10
3
2
1
0
p
limited by on-state
resistance
10 µs
100 µs
1 ms
10 ms
DC
=f(tp)
thJC
parameter: D =tp/T
1
10
0
10
0.5
0.2
0.1
-1
[K/W]
10
0.05
thJC
Z
0.02
0.01
-2
10
single pulse
10
-1
10
-1
10
0
10
1
10
2
VDS [V]
10
-3
0
-1
-2
-3
-4
-5
10
-6
10
10
10
10
10
10
tp [s]
Rev. 1.1 page 4 2008-08-11
Page 5
BSC019N02KS G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
=f(VDS); Tj=25 °C R
D
parameter: V
GS
=f(ID); Tj=25 °C
DS(on)
parameter: V
GS
200
175
4 V
3 V
2.5 V
2.4 V
150
125
2.2 V
[A]
D
I
100
75
50
25
0
2 V
1.8 V
1.6 V
0123
VDS [V]
9
8
7
6
1.8 V
5
[mW]
4
DS(on)
R
3
2
1
0
0 1020304050
2 V
2.2 V
2.5 V
4.5 V
ID [A]
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
=f(VGS); |VDS|>2|ID|R
D
parameter: T
j
DS(on)max
gfs=f(ID); Tj=25 °C
3 V
3.5 V
100
350
300
75
250
200
[A]
D
I
50
25 °C
25
150 °C
[S]
fs
g
150
100
50
0
0123
VGS [V]
0
0 25 50 75 100
ID [A]
Rev. 1.1 page 5 2008-08-11
Page 6
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
=f(Tj); ID=50 A; VGS=4.5 V V
DS(on)
=f(Tj); VGS=V
GS(th)
DS
BSC019N02KS G
4
3
]
Ω
[m
DS(on)
R
2
98 %
typ
1
0
-60 -20 20 60 100 140
Tj [°C]
1.6
1.2
3500 µA
[V]
GS(th)
V
0.8
350 µA
0.4
0
-60 -20 20 60 100 140
Tj [°C]
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
); VGS=0 V; f =1 MHz IF=f(VSD)
DS
parameter: T
5
10
10
j
3
2
10
4
10
C [pF]
3
10
2
10
0 5 10 15 20
Ciss
Coss
VDS [V]
Crss
25 °C
150 °C, 98%
25 °C, 98%
[A]
F
I
10
10
10
150 °C
1
0
-1
0 0.5 1 1.5 2
VSD [V]
Rev. 1.1 page 6 2008-08-11
Page 7
13 Avalanche characteristics 14 Typ. gate charge
V
IAS=f(tAV); RGS=25 Ω
parameter: T
10
j(start)
3
=f(Q
GS
parameter: V
); ID=50 A pulsed
gate
DD
5
BSC019N02KS G
4
25 °C
100 °C
125 °C
[V]
GS
V
3
4 V
2
[A]
AV
I
10
10
2
1
1
0
10
10
0
10
1
10
2
10
3
tAV [µs]
0
0 20406080
Q
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
=f(Tj); ID=1 mA
BR(DSS)
24
V
GS
gate
16 V
10 V
[nC]
Q
g
22
[V]
20
BR(DSS)
V
V
gs(th)
18
Q
16
g(th)
Q
gs
Q
sw
Q
gd
Q
gate
-60 -20 20 60 100 140
Tj [°C]
Rev. 1.1 page 7 2008-08-11
Page 8
Package Outline PG-TDSON-8
PG-TDSON-8: Outline
BSC019N02KS G
Footprint
Dimensions in mm
Rev. 1.1 page 8 2008-08-11
Page 9
Package Outline
PG-TDSON-8: Tape
BSC019N02KS G
Dimensions in mm
Rev. 1.1 page 9 2008-08-11
Page 10
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
).
BSC019N02KS G
Rev. 1.1 page 10 2008-08-11
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