Page 1
BSC018N04LS G
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel
• Logic level
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
Type Package Marking
BSC018N04LS G PG-TDSON-8 018N04LS
1)
for target applications
product (FOM)
DS(on)
DS(on)
Product Summary
V
DS
R
DS(on),max
I
D
40 V
1.8
100 A
PG-TDSON-8
mΩ
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Gate source voltage
1)
J-STD20 and JESD22
=25 °C, unless otherwise specified
j
I
D
VGS=10 V, TC=25 °C
V
V
V
T
V
R
3)
4)
I
D,pulse
I
AS
E
AS
V
GS
TC=25 °C
TC=25 °C
ID=50 A, R
=10 V, TC=100 °C
GS
=4.5 V, TC=25 °C
GS
=4.5 V,
GS
=100 °C
C
=10 V, TA=25 °C,
GS
=50 K/W
thJA
GS
2)
=25 Ω
Value
100 A
100
100
100
30
400
50
295 mJ
±20 V
Rev. 1.1 page 1 2008-08-11
Page 2
Maximum ratings, at Tj=25 °C, unless otherwise specified
BSC018N04LS G
Parameter Symbol Conditions Unit
stg
TC=25 °C
=25 °C,
T
A
R
=50 K/W
thJA
2)
Power dissipation
Operating and storage temperature
P
tot
, T
T
j
Value
125 W
2.5
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
Electrical characteristics, at T
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
6 cm2 cooling area
2)
- - 1 K/W
--50
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
=0 V, ID=1 mA
VDS=VGS, ID=85 µA
VDS=40 V, VGS=0 V,
T
=25 °C
j
V
=40 V, VGS=0 V,
DS
T
=125 °C
j
VGS=20 V, VDS=0 V
VGS=4.5 V, ID=50 A
=10 V, ID=50 A
V
GS
|VDS|>2|ID|R
I
=50 A
D
DS(on)max
40 - - V
1.2 - 2
- 0.1 1 µA
- 10 100
- 10 100 nA
- 2.0 2.5
- 1.5 1.8
- 1.3 -
,
90 180 - S
mΩ
Ω
Rev. 1.1 page 2 2008-08-11
Page 3
BSC018N04LS G
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
C
iss
=0 V, VDS=20 V,
V
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
5)
Q
gs
Q
g(th)
Q
gd
Q
sw
GS
f =1 MHz
V
=20 V, VGS=10 V,
DD
=30 A, R
I
D
V
DD
V
GS
G
=20 V, ID=30 A,
=0 to 10 V
=1.6 Ω
- 8900 12000 pF
- 1800 2400
- 100 -
-13-ns
- 7.4 -
-55-
- 9.0 -
-26-nC
-14-
-11-
-23-
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Q
V
Q
Q
Q
g
plateau
g
g(sync)
oss
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
5)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
Q
rr
VDD=20 V, ID=30 A,
V
=0 to 4.5 V
GS
VDS=0.1 V,
V
=0 to 10 V
GS
VDD=20 V, VGS=0 V
TC=25 °C
VGS=0 V, IF=50 A,
T
=25 °C
j
VR=20 V, IF=IS,
di
/dt =400 A/µs
F
- 113 150
- 2.9 - V
-5472nC
- 106 -
-69-
- - 100 A
- - 400
- 0.81 1.2 V
- 125 - nC
Rev. 1.1 page 3 2008-08-11
Page 4
1 Power dissipation 2 Drain current
P
=f(TC) ID=f(TC); VGS≥10 V
tot
BSC018N04LS G
140
120
120
100
100
80
80
[W]
tot
P
60
[A]
D
I
60
40
40
20
0
0 40 80 120 160
TC [°C]
20
0
0 40 80 120 160
TC [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
=f(VDS); TC=25 °C; D =0 Z
D
parameter: t
10
3
p
limited by on-state
resistance
1 µs
10 µs
=f(tp)
thJC
parameter: D =tp/T
10
[A]
D
I
10
10
10
10
2
DC
1
0
-1
10
-1
10
0
VDS [V]
10
100 µs
1 ms
10 ms
1
10
1
0.5
[K/W]
0.2
thJC
Z
0.1
0.1
0.05
0.02
0.01
single pulse
0000001
0.01
2
10
-6
10
-4
-5
10
10
-2
-3
10
10
0
-1
10
tp [s]
Rev. 1.1 page 4 2008-08-11
Page 5
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
=f(VDS); Tj=25 °C R
D
parameter: V
GS
=f(ID); Tj=25 °C
DS(on)
parameter: V
GS
BSC018N04LS G
600
500
4.5 V
5 V
4
3
400
10 V
]
Ω
[m
DS(on)
R
2
[A]
D
I
4 V
300
200
3.5 V
100
0
3.2 V
3 V
2.8 V
0123
VDS [V]
1
0
0 1020304050
ID [A]
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
=f(VGS); |VDS|>2|ID|R
D
parameter: T
j
DS(on)max
gfs=f(ID); Tj=25 °C
3.5 V
4 V
4.5 V
5 V
10 V
400
300
350
250
300
[A]
D
I
250
200
[S]
fs
g
200
150
150
100
100
50
150 °C
25 °C
0
012345
VGS [V]
50
0
0 40 80 120 160
ID [A]
Rev. 1.1 page 5 2008-08-11
Page 6
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
=f(Tj); ID=50 A; VGS=10 V V
DS(on)
=f(Tj); VGS=VDS; ID=85 µA
GS(th)
BSC018N04LS G
3
2.5
2.5
2
]
Ω
[m
DS(on)
R
2
1.5
98 %
1.5
typ
[V]
GS(th)
V
1
1
0.5
0
-60 -20 20 60 100 140 180
Tj [°C]
0.5
0
-60 -20 20 60 100 140 180
Tj [°C]
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
); VGS=0 V; f =1 MHz IF=f(VSD)
DS
parameter: T
5
10
j
1000
10
4
Ciss
25 °C
150 °C, 98%
100
Coss
150 °C
25 °C, 98%
C [pF]
10
3
[A]
F
I
10
VDS [V]
Crss
1
0.0 0.5 1.0 1.5 2.0
VSD [V]
2
10
1
10
0 10203040
Rev. 1.1 page 6 2008-08-11
Page 7
13 Avalanche characteristics 14 Typ. gate charge
V
IAS=f(tAV); R
parameter: T
=25 Ω
GS
j(start)
=f(Q
GS
parameter: V
); ID=30 A pulsed
gate
DD
BSC018N04LS G
100
100 °C
125 °C
[A]
10
AV
I
1
1 10 100 1000
tAV [µs]
25 °C
12
10
8
[V]
6
GS
V
4
2
0
0 40 80 120
Q
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
=f(Tj); ID=1 mA
BR(DSS)
gate
20 V
8 V
32 V
[nC]
45
V
GS
Q
g
40
35
[V]
BR(DSS)
V
30
25
20
-60 -20 20 60 100 140 180
V
gs(th)
Q
g(th)
Q
gs
Q
sw
Q
gd
Q
gate
Tj [°C]
Rev. 1.1 page 7 2008-08-11
Page 8
Package Outline PG-TDSON-8
PG-TDSON-8: Outline
BSC018N04LS G
Footprint
Dimensions in mm
Rev. 1.1 page 8 2008-08-11
Page 9
Package Outline
PG-TDSON-8: Tape
BSC018N04LS G
Dimensions in mm
Rev. 1.1 page 9 2008-08-11
Page 10
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
BSC018N04LS G
Rev. 1.1 page 10 2008-08-11
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