Datasheet BSA 223SP Datasheet (INFINEON)

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Preliminary data

OptiMOS-P Small-Signal-Transistor

Feature

• P-Channel

• Enhancement mode

• Super Logic Level (2.5 V rated)

• 150°C operating temperature

• Avalanche rated

• dv/dt rated

Type Package Ordering Code

BSA 223SP SC-75 Q67042-S4176

Marking

BPs

BSA 223SP

Product Summary

V

DS

R

DS(on)

I

D

SC-75

-20 V

1.2 Ω

-0.39 A

Gate
pin1

Source
pin 2

Drain
pin 3

Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit

Continuous drain current

TA=25°C
TA=70°C

Pulsed drain current

TA=25°C

Avalanche energy, single pulse

ID=-0.39 A , VDD=-10V, RGS=25Ω

Reverse diode dv/dt

IS=-0.39A, VDS=-16V, di/dt=200A/µs, T

jmax

=150°C

I

I

E

dv/dt

Gate source voltage V
Power dissipation

TA=25°C

P

Operating and storage temperature T

D

D puls

AS

GS
tot

, T

j

stg

-0.39

-0.31

-1.56

1.4 mJ

-6 kV/µs

±12

0.25 W

-55... +150

A

V

°C

IEC climatic category; DIN IEC 68-1 55/150/56

2002-08-26Page 1

Preliminary data

BSA 223SP

Thermal Characteristics
Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point R
Thermal resistance, junction - ambient, leaded R

thJS
thJA

- - 150 K/W

- - 500

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=-250µA

Gate threshold voltage, VGS = V

ID=-1.5µA

Zero gate voltage drain current

VDS=-20V, VGS=0, Tj=25°C
VDS=-20V, VGS=0, Tj=150°C

Gate-source leakage current

DS

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

-20 - - V

-0.6 -0.9 -1.2

-

-

-0.1

-10

-1

-100

- -10 -100 nA

µA

VGS=-12V, VDS=0

Drain-source on-state resistance

VGS=-2.5V, ID=-0.29A

Drain-source on-state resistance

VGS=-4.5, ID=-0.39A

R

DS(on)

R

DS(on)

- 1.27 2.1

- 0.7 1.2

Ω

2002-08-26Page 2

Preliminary data

BSA 223SP

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C
Output capacitance C

Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

Gate Charge Characteristics

Gate to source charge Q
Gate to drain charge Q
Gate charge total Q

fs

iss
oss

rss

d(on)
r
d(off)
f

gs
gd

g

VDS≥2*ID*R
ID=-0.31A

VGS=0, VDS=-15V,
f=1MHz

DS(on)max

,

0.35 0.7 - S

- 45 56 pF

- 21 26

- 17 22

VDD=-10V, VGS=-4.5V,
ID=-0.39A, RG=6Ω

- 3.8 5.7 ns

- 5 7.5

- 5.1 7.6

- 3.2 4.8

VDD=-10V, ID=-0.39A - -0.04 -0.05 nC

- -0.4 -0.5

VDD=-10V, ID=-0.39A,
VGS=0 to -4.5V

- -0.5 -0.62

Gate plateau voltage V

Reverse Diode

Inverse diode continuous

I

forward current
Inv. diode direct current, pulsed I

Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q

(plateau)

S

SM

SD

rr

rr

VDD=-10V, ID=-0.39A - -2.2 -2.7 V

TA=25°C - - -0.39 A

- - -1.56

VGS=0, IF=-0.39 - -1 -1.33 V
VR=-10V, |IF| = |lD|,

diF/dt=100A/µs

- 7.6 9.5 ns

- 1.1 1.4 nC

2002-08-26Page 3

Preliminary data

BSA 223SP

1 Power dissipation

P

= f (TA)

tot

BSA 223SP

0.55

W

0.45

0.4

tot

0.35

P

0.3

0.25

0.2

0.15

0.1

0.05

0

0 20 40 60 80 100 120

°C

2 Drain current

ID = f (TA)
parameter: | VGS| ≥ 4.5 V

BSA 223SP

-0.42

A

-0.36

-0.32

-0.28

D

I

-0.24

-0.2

-0.16

-0.12

-0.08

-0.04

160

T

A

0

0 20 40 60 80 100 120 °C 160

T

A

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TA = 25 °C

1

BSA 223SP

-10

A

I

D

DS(on)

V

=

-10

/

DS

0

0

-10

D

I

R

-1

-10

-2

-10

-10

-1

DC

-10

t

= 180.0µs

p

1 ms

10 ms

1

V

4 Transient thermal impedance

Z

= f (tp)

thJA

parameter : D = tp/T

BSA 223SP

3

10

K/W

2

10

1

10

thJA

Z

0

10

D = 0.50

0.20

-1

10

-2

10

2

-10

V

DS

10

-3

10

single pulse

-7

10

-6

-5

-4

10

10

10

-3

10

0.10

0.05

0.02

0.01

-2

t

0

s

10

p

2002-08-26Page 4

Preliminary data

BSA 223SP

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj =25°C

0.7

3V
4V

A

4.5V
6V
7V
8V

0.5

10V

D

-I

0.4

0.3

0.2

0.1

0

0 0.3 0.6 0.9

6 Typ. drain-source on resistance

R

DS(on)

= f (ID)

parameter: VGS, Tj = 25 °C

4

Ω

2.2V

2.5V
3V

2.5V

2.2V

V

-V

1.5

DS

3

4V

DS(on)

R

4.5V

2.5

6V
7V
8V

2

10V

1.5

1

0.5

0

0 0.1 0.2 0.3 0.4 0.5

A

0.7

-I

D

7 Typ. transfer characteristics

ID= f ( VGS ); | VDS| ≥ 2 x |ID| x R

DS(on)max

parameter: Tj = 25 °C

0.7

A

0.5

D

-I

0.4

0.3

0.2

0.1

0

0 0.5 1 1.5 2

8 Typ. forward transconductance

gfs = f(ID)

parameter: Tj = 25 °C

1.1

S

0.9

0.8

0.7

fs

g

0.6

0.5

0.4

0.3

0.2

0.1

V

-V

3

GS

0

0 0.1 0.2 0.3 0.4 0.5

A

0.7

-I

D

2002-08-26Page 5

Preliminary data

BSA 223SP

9 Drain-source on-resistance

R

DS(on)

= f(Tj)

parameter: ID = -0.39 A, VGS = -4.5 V

1.6

Ω

1.2

DS(on)

1

R

0.8

0.6

0.4

0.2

0

-60 -20 20 60 100

98%

typ.

°C

10 Typ. gate threshold voltage

V

parameter: VGS = V

160

T

j

= f (Tj)

GS(th)

DS

1.6

V

1.2

GS(th)

1

- V

0.8

0.6

0.4

0.2

0

-60 -20 20 60 100

2%

typ.

98%

°C

T

160

j

11 Typ. capacitances

C = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C

2

10

C

C

pF

C

C

1

10

0 2 4 6 8 10 12

iss

oss

V

-V

rss

DS

15

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj = 25 °C

1

BSA 223SP

-10

A

0

-10

F

I

-1

-10

Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

-2

-10
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4

V

V

SD

-3

2002-08-26Page 6

Preliminary data

BSA 223SP

13 Typ. avalanche energy

EAS = f (Tj), par.: ID = -0.39 A
VDD = -10 V, RGS = 25 Ω

1.4

mJ

1

AS

E

0.8

0.6

0.4

0.2

0

20 40 60 80 100 120

°C

14 Typ. gate charge

V

GS

= f (Q

Gate

)

parameter: ID = -0.39 A pulsed, Tj = 25 °C

BSA 223SP

-16

V

-12

GS

-10

V

-8

20%
50%

-6

80%

-4

-2

160

T

j

0

0 0.2 0.4 0.6 0.8 1

nC

|Q

1.3

Gate

|

15 Drain-source breakdown voltage

V

(BR)DSS

(BR)DSS

V

= f (Tj)

BSA 223SP

-24.5

V

-23.5

-23

-22.5

-22

-21.5

-21

-20.5

-20

-19.5

-19

-18.5

-18

-60 -20 20 60 100

°C

180

T

j

2002-08-26Page 7

Preliminary data

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© Infineon Technologies AG 1999
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

BSA 223SP

2002-08-26Page 8