Page 1
BSI
Ultra Low Power/Voltage CMOS SRAM
256K x 16 or 512K x 8 bit switchable
BS616UV4020
FEATURES
DESCRIPTION
• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
Vcc = 2.0V C-grade: 15mA (Max.) operating current
I-grade : 20mA (Max.) operating current
0.2uA (Typ.) CMOS standby current
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade : 25mA (Max.) operating current
0.25uA (Typ.) CMOS standby current
The BS616UV4020 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits or
524,288 bytes by 8 bits selectable by CIO pin and operates from a
wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.2uA and maximum access time of 70/100ns in 2V operation.
• High speed access time :
-70 70ns (Max.) at Vcc=2.0V
-10 100ns (Max.) at Vcc=2.0V
•Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
Easy memory expansion is provided by active HIGH chip
enable2(CE2), active LOW chip enable1(CE1), active LOW
output enable(OE) and three-state output drivers.
The BS616UV4020 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV4020 is available in DICE form and 48-pin BGA type.
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
PRODUCT FAMILY
PRODUCT FAMILY
BS616UV4020DC DICE
BS616UV4020BC
BS616UV4020DI
BS616UV4020BI
OPERATING
TEMPERATURE
O
+0
C to +70OC 1.8V ~ 3.6V 70 / 100 1uA 1.5uA 15mA 20mA
O
-40
C to +85OC 1.8V ~ 3.6V 70 / 100 2uA 3uA 20mA 25mA
Vcc RANGE
SPEED
(ns)
Vcc=2V Vcc=3V Vcc=2V Vcc=3V
POWER DISSIPATION
STANDBY
CCSB1
(I
, Max)
Vcc=2V
Operating
(ICC, Max)
Vcc=3V
PKG TYPE
BGA-48-0810
DICE
BGA-48-0810
PIN CONFIGURATION
BLOCK DIAGRAM
A15
A14
A13
A12
Address
A11
A10
A9
A8
A17
A7
A6
D15
CE1
CE2
CIO
Vdd
Vss
WE
UB
Input
Buffer
D0
.
.
.
.
OE
LB
16(8)
.
.
16(8)
.
.
Control
22
Row
Decoder
Data
16(8)
Input
Buffer
16(8)
Data
Output
Buffer
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616UV4020
1
2048
A16
Memory Array
2048 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Address Input Buffer
A0
A1 A2 A3
2048
128(256)
14(16)
A5
A4
(SAE)
Revision 2.4
April 2002
Page 2
BSI
PIN DESCRIPTIONS
Name Function
BS616UV4020
A0-A17 Address Input
SAE Address Input
CIO x8/x16 select input
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
WE Write Enable Input
OE Output Enable Input
LB and UB Data Byte Control Input
DQ0 - DQ15 Data Input/Output
Ports
Vcc
These 18 address inputs select one of the 262,144 x 16-bit words in the RAM.
This address input incorporates with the above 18 address inputs select one of the
524,288 x 8-bit bytes in the RAM if the CIO is LOW. Don't use when CIO is HIGH.
This input selects the organization of the SRAM. 262,144 x 16-bit words configuration
is selected if CIO is HIGH. 524,288 x 8-bit bytes configuration is selected if CIO is
LOW.
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active to read
from or write to the device. If either chip enable is not active, the device is deselected
and is in a standby power mode. The DQ pins will be in the high impedance state
when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
Lower byte and upper byte data input/output control pins. The chip is deselected when
both LB and UB pins are HIGH.
These 16 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Gnd
R0201-BS616UV4020
Ground
2
Revision 2.4
April 2002
Page 3
BSI
TRUTH TABLE
MODE CE1 CE2 OE WE CIO LB UB SAE D0~7 D8~15 VCC Current
BS616UV4020
Fully Standby
X L
X X X
X X
X High-Z High-Z I
Output Disable L H H H X X X X High-Z High-Z I
L H Dout High-Z
Read from SRAM
H X X X
L H L H H
H L High-Z Dout
X
( WORD mode )
L L
Dout Dout
L H Din X
Write to SRAM
( WORD mode )
L H X L H
H L X Din
L L
X
Din Din
Read from SRAM
L H L H L X X A-1 Dout High-Z I
( BYTE Mode )
Write to SRAM
L H X L L X X A-1 Din X I
( BYTE Mode )
CCSB
I
I
, I
CC
CC
CC
CC
CC
CCSB1
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL PA R A M E TER RATING UNITS
V
T
T
P
I
TERM
BIAS
STG
T
OUT
Ter m i n a l Vo l ta g e w i t h
Respect to G ND
Temperature Under Bias -40 to +125
Storage Temperature -60 to +150
Pow er Dissip ation 1.0 W
DC Output Current 20 mA
-0.5 to
Vcc+0.5
V
O
C
O
C
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
R0201-BS616UV4020
OPERATING RANGE
RANGE
Commercial 0
Industrial -40
CAPACITANCE
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Input
IN
C
C
DQ
Capacitance
Input/Output
Capacitance
1. This parameter is guaranteed and not tested.
3
AMBIENT
TEMPERATURE
O
C to +70
O
(1)
O
C1.8V ~ 3.6V
O
C to +85
C1.8V ~ 3.6V
(TA = 25oC, f = 1.0 MHz)
VIN=0V 6 pF
I/O
V
=0V 8 pF
Vcc
Revision 2.4
April 2002
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BSI
BS616UV4020
DC ELECTRICAL CHARACTERISTICS (TA = 0
PARAME TER
NAME
V
V
I
I
V
V
I
I
I
IL
IH
IL
OL
OL
OH
CC
CCSB
CCSB1
PARAM ETE R TEST CONDITIONS MIN. TYP.
Guaranteed Input Low
(2)
Vol tage
Guaranteed Input High
(2)
Vol tage
Input Leakage Current Vcc = Max, V
Output Leakage Current
Output Low Voltage Vcc = Max, IOL = 1mA
Output High Voltage Vcc = Min, IOH = -0.5mA
Operating Power Supply
Current
Standby Current - TTL
Standby Current -CMOS
Vcc = Max, CE1 = V
or OE = VIH, V
Vcc = Max, CE1= VIL, CE2=V
IDQ = 0mA, F = Fmax
Vcc = Max, CE1 = V
IDQ = 0mA
Vcc = Max, CE1ЊVcc-0.2V or
CE2Љ0.2V ;VINЊ Vcc - 0.2V or
IN
Љ
V
0.2V
o
C to +70oC)
(1)
MAX. UNITS
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
IN
= 0V to Vcc -- -- 1 uA
IH
or CE2=V
I/O
= 0V to Vcc
(3)
IH
or CE2=V
IL
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
IH
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
IL
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
-0.5 -- 0.6
-0.5 0.8
1.4 -- Vcc+0.2
2.0 Vcc+0.2
-- -- 1 uA
-- -- 0.4
-- -- 0.4
1.6 -- --
2.4 -- --
-- -- 15
-- -- 20
-- -- 0.6
-- -- 1
-- 0.2 1
-- 0.25 1.5
V
V
V
V
mA
mA
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
.
RC
R0201-BS616UV4020
4
Revision 2.4
April 2002
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BSI
BS616UV4020
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70
o
C )
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP.
V
I
CCDR
t
CDR
DR
t
R
Vcc for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
1. Vcc = 1.5V, TA= + 25OC
2. t
= Read Cycle Time
RC
LOW V
DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
CC
Vcc
CE1
V
CE1
V
See Retention Waveform
Vcc - 0.2V or CE2 Љ0.2V ;
Њ
Vcc - 0.2V or V
Њ
IN
Vcc - 0.2V or CE2 Љ0.2V
Њ
Vcc - 0.2V or V
Њ
IN
Data Retention Mode
Vcc
t CDR
0.2V
Љ
IN
0.2V
Љ
IN
VDR Њ 1.5V
CE1 Њ Vcc - 0.2V
1.5 -- --
-- 0.1 1 uA
0----
(2)
T
RC
Vcc
t R
CE1
VIHVIH
(1)
MAX. UNITS
-- --
V
ns
ns
LOW V
DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
CC
Vcc
CE2
R0201-BS616UV4020
Data Retention Mode
Vcc
VDR Њ 1.5V
t CDR
VIL
CE2 Љ 0.2V
5
Vcc
t R
VIL
Revision 2.4
April 2002
Page 6
BSI
BS616UV4020
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output
Timing Reference Level
Vcc/0V
5ns
0.5Vcc
AC TEST LOADS AND WAVEFORMS
Ω
2V
OUTPUT
INCLUDING
JIG AND
SCOPE
Vcc
GND
1333
100PF
FIGURE 1A
OUTPUT
10%
Ω
2000
THEVENIN EQUIVALENT
ALL INPUT PULSES
→
←
OUTPUT
Ω800
90%
90%
FIGURE 2
2V
INCLUDING
JIG AND
SCOPE
→
←
10%
5ns
1.2V
Ω
1333
5PF
2000
FIGURE 1B
KEY TO SWITCHING WAVEFORMS
WAVEFORM INPUTS OUTPUTS
MUST BE
STEADY
MAY CHANGE
FROM H TO L
MAY CHANGE
FROM L TO H
,
DON T CARE:
ANY CHANGE
Ω
PERMITTED
DOES NOT
APPLY
MUST BE
STEADY
WILL BE
CHANGE
FROM H TO L
WILL BE
CHANGE
FROM L TO H
CHANGE :
STATE
UNKNOWN
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70
READ CYCLE
JEDEC
PARAMETER
NAME
t
AVAX
t
AVQV
t
E1LQV
t
E2LQV
t
BA
t
GLQV
t
E1LQX
t
BE
t
GLQX
t
E1HQZ
t
BDO
t
GHQZ
t
AXQX
PARAMETER
NAME
t
RC
t
AA
t
ACS1
t
ACS2
(1)
t
BA
t
OE
t
CLZ
t
BE
t
OLZ
t
CHZ
t
BDO
t
OHZ
t
OH
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Access Time
Data Byte Control Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output in Low Z
Chip Deselect to Output in High Z
Data Byte Control to Output High Z
Output Disable to Output in High Z
Output Disable to Output Address Change
NOTE :
1. t
BA is 35ns/50ns (@speed=70ns/100ns) with address toggle .
t
BA is 70ns/100ns (@speed=70ns/100ns) without address toggle .
DESCRIPTION
o
C , Vcc=2.0V )
(CE1)
(CE2)
(LB,UB)
(CE2,CE1)
(LB,UB)
(CE2,CE1)
(LB,UB)
BS616UV4020-70
MIN. TYP. MAX.
70
70
70
70
35
35
10
10
10
0
0
0
35
35
30
10
BS616UV4020-10
MIN. TYP. MAX.
100
100
100
100
50
50
15
15
15
0
0
0
40
40
35
15
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
R0201-BS616UV4020
6
Revision 2.4
April 2002
Page 7
BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
ADDRESS
D
(1,2,4)
t OH
OUT
t AA
BS616UV4020
t RC
t OH
READ CYCLE2
CE2
CE1
D
OUT
READ CYCLE3
ADDRESS
OE
CE2
CE1
(1,3,4)
(1,4)
t CLZ
(5)
t ACS2
t ACS1
t CLZ
(5)
t AA
t OLZ
t ACS1
t ACS2
t OE
t RC
t OHZ
t CHZ
t OH
(1,5)
t CHZ
(5)
(5)
LB,UB
t BE
t BA
D
OUT
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE1 = V
3. Address valid prior to or coincident with CE1 transition low and CE2 transition high.
4. OE = V
5. Transition is measured 500mV from steady state with CL = 30pF as shown in Figure 1B.
R0201-BS616UV4020
IL .
±
The parameter is guaranteed but not 100% tested.
IL and CE2 = VIH.
7
t BDO
Revision 2.4
April 2002
Page 8
BSI
BS616UV4020
AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70
WRITE CYCLE
JEDEC
PARAMETER
NAME
t
AVAX
t
E1LWH
t
AVWL
t
AVWH
t
WLWH
t
WHAX
t
BW
t
WLQZ
t
DVWH
t
WHDX
t
GHQZ
t
WHQX
NOTE :
1. tBW is 30ns/40ns (@speed=70ns/100ns) with address toggle .
t
BW is 70ns/100ns (@speed=70ns/100ns) without address toggle .
PARAMETER
NAME
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
(1)
t
BW
t
WHZ
t
DW
t
DH
t
OHZ
t
OW
DESCRIPTION
Write Cycle Time
Chip Select to End of Write
Address Set up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Data Byte Control to End of Write
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
(CE2, CE1, WE)
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1
(1)
o
C , Vcc=2.0V )
(LB,UB)
t WC
BS616UV4020-70
MIN. TYP. MAX.
70
70
0
70
35
0
30
0
30
0
0
5
30
30
BS616UV4020-10
MIN. TYP. MAX.
100
100
0
100
50
0
40
0
40
0
0
10
40
40
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ADDRESS
OE
CE2
CE1
LB,UB
WE
D
OUT
t AS
(4,10)
t OHZ
(3)
t WR
(5)
(11)
(5)
t CW
t BW
(5)
t AW
t WP
(2)
(3)
t DH
t DW
D
IN
R0201-BS616UV4020
8
Revision 2.4
April 2002
Page 9
BSI
BS616UV4020
WRITE CYCLE2
ADDRESS
CE2
CE1
LB,UB
WE
D
OUT
D
IN
(1,6)
t AS
(5)
(5)
t AW
(4,10)
t WHZ
t WC
t CW
t BW
t WP
(11)
t WR
(3)
(2)
t DH
(7) (8)
t DW
t DH
(8,9)
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low.
All signals must be active to initiate a write and any one signal can terminate
a write by going inactive. The data input setup and hold timing should be referenced to the
second transition edge of the signal that terminates the write.
WR is measured from the earlier of CE2 going low, or CE1 or WE going high at the end of write cycle.
3. T
4. During this period, DQ pins are in the output state so that the input signals of opposite
phase to the outputs must not be applied.
5. If the CE2 high transition or CE1 low transition or LB,UB low transition occurs simultaneously with the WE low transitions
or after the WE transition, output remain in a high impedance state.
6. OE is continuously low (OE = V
OUT is the same phase of write data of this write cycle.
7. D
OUT is the read data of next address.
8. D
9. If CE2 is high or CE1 is low during this period, DQ pins are in the output state. Then the
data input signals of opposite phase to the outputs must not be applied to them.
10. Transition is measured 500mV from steady state with CL = 30pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
CW is measured from the later of CE2 going high or CE1 going low to the end of write.
11. T
R0201-BS616UV4020
IL ).
±
9
Revision 2.4
April 2002
Page 10
BSI
ORDERING INFORMATION
BS616UV4020 X X -- Y Y
BS616UV4020
SPEED
70: 70ns
10: 100ns
GRADE
C: +0oC ~ +70oC
o
C ~ +85oC
I: -40
PACKAGE
B :BGA - 48 PIN(8x10mm)
D :DICE
PACKAGE DIMENSIONS (continued)
1.4 Max.
e
VIEW A
SIDE VIEW
D0.1
D1
0.05
0.25
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
N ED
48 10.0 8.0
E1
E0.1
E1D1 e
3.755.25 0.75
SOLDER BALL 0.350.05
48 mini-BGA (8 x 10mm)
R0201-BS616UV4020
10
Revision 2.4
April 2002
Page 11
BSI
BS616UV4020
REVISION HISTORY
Revision Description Date Note
2.2 2001 Data Sheet release Apr. 15, 2001
2.3 Modify Standby Current (Typ.
and Max.)
2.4 Modify some AC parameters April,11,2002
Jun. 29, 2001
R0201-BS616UV4020
11
Revision 2.4
April 2002
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