Page 1
BSI
Very Low Power/Voltage CMOS SRAM
128K x 16 or 256K x 8 bit switchable
BS616LV2021
FEATURES
• Very low operation voltage : 2.4 ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade: 25mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade: 40mA (Max.) operating current
I-grade: 45mA (Max.) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc = 3.0V
-10 100ns (Max.) at Vcc = 3.0V
DESCRIPTION
The BS616LV2021 is a high performance, very low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits or
262,144 bytes by 8 bits selectable by CIO pin and operates from a wide
range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.1uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by active HIGH chip
enable2(CE2), active LOW chip enable1(CE1), active LOW output
enable(OE) and three-state output drivers.
The BS616LV2021 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
• Automatic power down when chip is deselected
The BS616LV2021 is available in DICE form and 48-pin BGA type.
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
PRODUCT FAMILY
PRODUCT
FAMILY
BS616LV2021DC DICE
BS616LV2021AC
BS616LV2021DI DICE
BS616LV2021AI
OPERATING
TEMPERATURE
O
+0
C to +70OC2.4 40mA
O
-40
C to +85OC2.4 45mA
Vcc
RANGE
( ns )
Vcc=
3.0V
V ~ 5.5V 70 / 100 0.7uA 6uA 20mA
V ~ 5.5V 70 / 100 1.5uA 25uA 25mA
SPEED
POWER DISSIPATION
STANDBY
CCSB1
(I
, Max )
Vcc=
3.0V
Vcc=
5.0V
Operating
(ICC, Max )
Vcc=
3.0V
Vcc=
5.0V
PKG TYPE
BGA-48-0608
BGA-48-0608
PIN CONFIGURATION
BLOCK DIAGRAM
A15
A14
A13
A12
Address
A11
A10
A9
A8
A7
A6
D15
CE1
CE2
CIO
Vdd
Vss
D0
WE
UB
LB
Input
Buffer
16(8)
.
.
.
.
.
.
OE
16(8)
.
.
Control
20
Row
Decoder
Data
16(8)
Input
Buffer
16(8)
Data
Output
Buffer
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616LV2021
1
1024
A16
Memory Array
1024 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Address Input Buffer
A0
A1 A2 A3
2048
128(256)
14(16)
A5
A4
(SAE)
Revision 2.4
April 2002
Page 2
BSI
PIN DESCRIPTIONS
Name Function
BS616LV2021
A0-A16 Address Input
SAE Address Input
CIO x8/x16 select input
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
WE Write Enable Input
OE Output Enable Input
LB and UB Data Byte Control Input
D0 - D15 Data Input/Output Ports
Vcc
These 17 address inputs select one of the 131,072 x 16-bit words in the RAM.
This address input incorporates with the above 17 address input select one of the
262,144 x 8-bit bytes in the RAM if the CIO is LOW. Don't use when CIO is HIGH.
This input selects the organization of the SRAM. 131,072 x 16-bit words configuration
is selected if CIO is HIGH. 262,144 x 8-bit bytes configuration is selected if CIO is
LOW.
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active to read
from or write to the device. If either chip enable is not active, the device is deselected
and is in a standby power mode. The DQ pins will be in the high impedance state
when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
Lower byte and upper byte data input/output control pins. The chip is deselected when
both LB and UB pins are HIGH.
These 16 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Gnd
R0201-BS616LV2021
Ground
2
Revision 2.4
April 2002
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BSI
TRUTH TABLE
MODE CE1 CE2 OE WE CIO LB UB SAE D0~7 D8~15 VCC Current
BS616LV2021
Fully Standby
Output Disable L H H H X X X X High-Z High-Z I
Read from SRAM
( WORD mode )
Write to SRAM
( WORD mode )
Read from SRAM
( BYTE Mode )
Write to SRAM
( BYTE Mode )
H X X X
X L
L H L H H
L H X L H
L H L H L X X A-1 Dout High-Z I
L H X L L X X A-1 Din X I
X X X
X X
L H Dout High-Z
H L High-Z Dout
L L
L H Din X
H L X Din
L L
X High-Z High-Z I
X
Dout Dout
X
Din Din
CCSB
, I
I
I
CCSB1
CC
CC
CC
CC
CC
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL PARAMETER RATING UNITS
TERM
V
BIAS
T
STG
T
T
P
OUT
I
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
R0201-BS616LV2021
Terminal Voltage with
Respect to GND
Temperature Under Bias C-40 to +125
Storage Temperature C-60 to +150
Power Dissipation 1.0 W
DC Output Current 20 mA
-0.5 to
Vcc+0.5
V
O
O
OPERATING RANGE
RANGE
Commercial 0OC to +70OC2.4V ~ 5.5V
Industrial -40OC to +85OC2.4V ~ 5.5V
CAPACITANCE
SYMBOL PARAMETER CONDITIONS MAX. UNIT
IN
C
DQ
C
1. This parameter is guaranteed and not tested.
AMBIENT
TEMPERATURE
(1)
(TA = 25oC, f = 1.0 MHz)
Input
Capacitance
Input/Output
Capacitance
VIN=0V 6 pF
I/O
V
3
Vcc
=0V 8 pF
Revision 2.4
April 2002
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BSI
BS616LV2021
DC ELECTRICAL CHARACTERISTICS (TA = 0
PARAMETER
NAME
IL
V
IH
V
IL
I
OL
I
OL
V
OH
V
CC
I
CCSB
I
CCSB1
I
PARAMETER TEST CONDITIONS MIN. TYP.
Guaranteed Input Low
(2)
Voltage
Guaranteed Input High
(2)
Voltage
Input Leakage Current Vcc = Max, V
Output Leakage Current
Output Low Voltage = 2mAVcc = Max, I
Output High Voltage = -1mAVcc = Min, I
Operating Power Supply
Current
Standby Current-TTL
Standby Current-CMOS
Vcc = Max, CE1 = V
I/O
V
= 0V to Vcc
Vcc = Max, CE1= V
DQ
= 0mA, F =
I
Vcc = Max, CE1 = V
IDQ= 0mA
Vcc = Max, CE1
Љ
0.2V,
CE2
Other inputs
Љ
0.2V
V
IN
o
C to +70oC)
IN
= 0V to Vcc
IH
or CE2=VILor OE = V
OL
OH
IL
, CE2=V
(3)
Fmax
IH
or CE2=V
Vcc-0.2V or
Њ
Vcc - 0.2V or
Њ
(1)
MAX. UNITS
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
-0.5 -- 0.8 V
2.0
2.2
Vcc+0.2
--
V
-- -- 1 uA
IH
,
-- -- 1 uA
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
IH
Vcc=3V
Vcc=5V
Vcc=3V
IL
Vcc=5V
Vcc=3V
-- -- 0.4 V
2.4 -- -- V
-- -- 20
mA
-- -- 40
-- -- 0.5
mA
-- -- 1
-- 0.1 0.7
uA
Vcc=5V
0.6
--
6
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
R0201-BS616LV2021
.
RC
4
Revision 2.4
April 2002
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BSI
BS616LV2021
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70
o
C )
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP.
V
I
CCDR
t
CDR
DR
t
R
Vcc for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
1. Vcc = 1.5V, TA= + 25OC
= Read Cycle Time
2. t
RC
LOW V
DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
CC
Vcc
CE1 ЊVcc - 0.2V or CE2 Љ0.2V or
V
Њ
IN
Vcc - 0.2V or V
0.2V
Љ
IN
CE1 ЊVcc - 0.2V or CE2 Љ0.2V
V
Vcc - 0.2V or V
Њ
IN
0.2V
Љ
IN
See Retention Waveform
Data Retention Mode
Vcc
VDR Њ 1.5V
t CDR
CE1 Њ Vcc - 0.2V
1.5 -- --
-- 0.05 0.5 uA
0----
T
RC
Vcc
t R
CE1
(2)
VIHVIH
(1)
MAX. UNITS
-- --
V
ns
ns
LOW V
DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
CC
Vcc
CE2
R0201-BS616LV2021
Data Retention Mode
Vcc
VDR Њ 1.5V
t CDR
VIL
CE2 Љ 0.2V
5
Vcc
t R
VIL
Revision 2.4
April 2002
Page 6
BSI
BS616LV2021
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output
Timing Reference Level
Vcc/0V
5ns
0.5Vcc
AC TEST LOADS AND WAVEFORMS
3.3V
OUTPUT
INCLUDING
JIG AND
SCOPE
OUTPUT
Vcc
GND
1269
100PF
Ω
1404
FIGURE 1A
THEVENIN EQUIVALENT
ALL INPUT PULSES
10%
→
←
OUTPUT
Ω667
90%
90%
FIGURE 2
3.3V
INCLUDING
JIG AND
SCOPE
→
1.73V
10%
← 5ns
Ω
AC ELECTRICAL CHARACTERISTICS (TA = 0
READ CYCLE
JEDEC
PARAMETER
NAME
t
AVAX
t
AVQV
t
E1LQV
t
E2LQV
t
BA
t
GLQV
t
ELQX
t
BE
t
GLQX
t
EHQZ
t
BDO
t
GHQZ
t
AXOX
NOTE :
1. tBA is 35ns/50ns (@speed=70ns/100ns) with address toggle .
t
BA is 70ns/100ns (@speed=70ns/100ns) without address toggle .
PARAMETER
NAME
t
RC
t
AA
t
ACS1
t
ACS2
(1)
t
BA
t
OE
t
CLZ
t
BE
t
OLZ
t
CHZ
t
BDO
t
OHZ
t
OH
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Access Time
Data Byte Control Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output in Low Z
Chip Deselect to Output in High Z
Data Byte Control to Output High Z
Output Disable to Output in High Z
Output Disable to Address Change
Ω
1269
5PF
Ω
1404
FIGURE 1B
DESCRIPTION
KEY TO SWITCHING WAVEFORMS
WAVEFORM INPUTS OUTPUTS
MUST BE
STEADY
MAY CHANGE
FROM H TO L
MAY CHANGE
FROM L TO H
,
DON T CARE:
ANY CHANGE
PERMITTED
DOES NOT
APPLY
o
C to +70oC, Vcc =3.0V )
BS616LV2021-70
MIN. TYP. MAX.
70 -- -- 100 -- -- ns
-- -- 70 -- -- 100 ns
(CE1)
(CE2)
-- -- 70 -- -- 100 ns
-- -- 70 -- -- 100 ns
(LB,UB) -- -- 35 -- -- 50 ns
-- -- 35 -- -- 50 ns
(CE1,CE2)
10 -- -- 15 -- -- ns
(LB,U ) 10B ----15---- ns
10 -- -- 15 -- -- ns
(CE1,CE2) 0 -- 35 0 -- 40 ns
(LB, UB)
0--350--40ns
0--300--35ns
10 -- -- 15 -- -- ns
BS616LV2021-10
MIN. TYP. MAX.
MUST BE
STEADY
WILL BE
CHANGE
FROM H TO L
WILL BE
CHANGE
FROM L TO H
CHANGE :
STATE
UNKNOWN
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
UNIT
R0201-BS616LV2021
6
Revision 2.4
April 2002
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BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
ADDRESS
D
(1,2,4)
t OH
OUT
t AA
BS616LV2021
t RC
t OH
READ CYCLE2
CE2
CE1
D
OUT
READ CYCLE3
ADDRESS
OE
CE2
CE1
(1,3,4)
(1,4)
t CLZ
(5)
t ACS2
t ACS1
t CLZ
(5)
t AA
t OLZ
t ACS1
t ACS2
t OE
t RC
t OHZ
t CHZ
(1,5)
t CHZ
t OH
(5)
(5)
LB,UB
t BE
t BA
D
OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
3. Address valid prior to or coincident with CE1 transition low and CE2 transition high.
4. OE = V
5. Transition is measured 500mV from steady state with CL = 30pF as shown in Figure 1B.
R0201-BS616LV2021
IL .
±
The parameter is guaranteed but not 100% tested.
IL and CE2 = VIH.
7
t BDO
Revision 2.4
April 2002
Page 8
BSI
BS616LV2021
AC ELECTRICAL CHARACTERISTICS (TA = 0
o
C to +70oC, Vcc =3.0V )
WRITE CYCLE
JEDEC
PARAMETER
NAME
t
AVAX
t
E1LWH
t
AVWL
t
AVWH
t
WLWH
t
WHAX
t
BW
t
WLQZ
t
DVWH
t
WHDX
t
GHQZ
t
WHOX
NOTE :
1. tBW is 30ns/40ns (@speed=70ns/100ns) with address toggle. ; tBW is 70ns/100ns (@speed=70ns/100ns) without address toggle .
PARAMETER
NAME
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
(1)
t
BW
t
WHZ
t
DW
t
DH
t
OHZ
t
OW
DESCRIPTION
Write Cycle Time
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width
Write recovery Time (CE2, CE1,WE)
Date Byte Control to End of Write
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
(LB,U ) 3B 0 -- -- 40 -- -- ns
BS616LV2021-70
MIN. TYP. MAX.
70 -- -- 100 -- -- ns
70 -- -- 100 -- -- ns
0----0---- ns
70 -- -- 100 -- -- ns
35 -- -- 50 -- -- ns
0----0---- ns
0--300--40ns
30 -- -- 40 -- -- ns
0----0---- ns
0--300--40ns
5----10---- ns
BS616LV2021-10
MIN. TYP. MAX.
UNIT
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1
(1)
t WC
ADDRESS
OE
CE2
CE1
LB,UB
WE
D
OUT
t AS
(4,10)
t OHZ
(3)
t WR
(5)
(11)
(5)
t CW
t BW
(5)
t AW
t WP
(2)
(3)
t DH
t DW
D
IN
R0201-BS616LV2021
8
Revision 2.4
April 2002
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BSI
BS616LV2021
WRITE CYCLE2
ADDRESS
CE2
CE1
LB,UB
WE
D
OUT
D
IN
(1,6)
t AS
(5)
(5)
(4,10)
t WHZ
t AW
t WC
t CW
t BW
t WP
(11)
t WR
(3)
(2)
t DH
(7) (8)
t DW
t DH
(8,9)
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low.
All signals must be active to initiate a write and any one signal can terminate
a write by going inactive. The data input setup and hold timing should be referenced to the
second transition edge of the signal that terminates the write.
3. T
WR is measured from the earlier of CE2 going low, or CE1 or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite
phase to the outputs must not be applied.
5. If the CE2 high transition or CE1 low transition or LB,UB low transition occurs simultaneously with the WE low transitions
or after the WE transition, output remain in a high impedance state.
6. OE is continuously low (OE = V
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE2 is high or CE1 is low during this period, DQ pins are in the output state. Then the
data input signals of opposite phase to the outputs must not be applied to them.
10. Transition is measured 500mV from steady state with CL = 30pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
11. T
CW is measured from the later of CE2 going high or CE1 going low to the end of write.
R0201-BS616LV2021
IL ).
±
9
Revision 2.4
April 2002
Page 10
BSI
ORDERING INFORMATION
BS616LV2021 X X -- Y Y
BS616LV2021
SPEED
70: 70ns
10: 100ns
GRADE
C: +0oC ~ +70oC
o
I: -40
C ~ +85oC
PACKAGE
A :BGA - 48 PIN(6x8mm)
D :DICE
PACKAGE DIMENSIONS
1.4 Max.
e
VIEW A
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
BALL PITCH e = 0.75
D
EN
8.0 6.0
D1
E1
48 3.755.25
E1D1
48 mini-BGA (6 x 8mm)
R0201-BS616LV2021
10
Revision 2.4
April 2002
Page 11
BSI
BS616LV2021
REVISION HISTORY
Revision Description Date Note
2.2 2001 Data Sheet release Apr. 15, 2001
2.3 Modify Standby Current (Typ. and
Max.)
2.4 Modify some AC parameters.
Modify 5V ICCSB1_Max(I-grade)
from 10uA to 25uA.
Jun. 29, 2001
April,15,2002
R0201-BS616LV2021
11
Revision 2.4
April 2002
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