Datasheet BS170 Datasheet (Siemens)

BS 170

SIPMOS

®

Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• V

GS(th)

Type

BS 170 60 V 0.3 A 5

= 0.8...2.0V

V

DS

I

D

R

DS(on)

Ω

Package Marking

TO-92 BS 170

Type Ordering Code Tape and Reel Information

BS 170 Q67000-S076 E6288

Pin 1 Pin 2 Pin 3

S G D

Maximum Ratings Parameter

Drain source voltage Drain-gate voltage

R

GS

= 20 k

Ω

Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current

T

= 25 °C

A

DC drain current, pulsed

T

= 25 °C

A

Power dissipation

T

= 25 °C

A

Symbol Values Unit

V V

DS DGR

60 V

60

V V I

GS gs

D

± ±

14 20

A

0.3

I

Dpuls

1.2

P

tot

W

0.63

Semiconductor Group

1 12/05/1997

Maximum Ratings

BS 170

Parameter

Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air

1)

Symbol Values Unit

T T R

j stg

thJA

-55 ... + 150 °C

-55 ... + 150

≤

200 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Electrical Characteristics,

Parameter

at

= 25°C, unless otherwise specified

T

j

Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

GS

= 0 V,

= 0.25 mA,

I

D

= 25 °C

T

j

Gate threshold voltage

V

GS

=

V

DS, ID

= 1 mA

Zero gate voltage drain current

V V

DS DS

= 60 V, = 60 V,

V V

= 0 V,

GS

= 0 V,

GS

= 25 °C

T

j

= 125 °C

T

j

Gate-source leakage current

V

GS

= 20 V,

V

DS

= 0 V

Drain-Source on-state resistance

V

GS

= 10 V,

= 0.2 A

I

D

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

60 - -

0.8 1.4 2

-

0.05

-

0.5 5

- 1 10

- 2.5 5

K/W

V

µA

nA

Ω

Semiconductor Group

2 12/05/1997

BS 170

Electrical Characteristics,

Parameter

Dynamic Characteristics

Transconductance

≥

2

V

DS

I

*

D * RDS(on)max, ID

Input capacitance

V

GS

= 0 V,

= 25 V, f = 1 MHz

V

DS

Output capacitance

V

GS

= 0 V,

= 25 V, f = 1 MHz

V

DS

Reverse transfer capacitance

V

GS

= 0 V,

= 25 V, f = 1 MHz

V

DS

Turn-on delay time

V R

DD G

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

D

Rise time

V R

DD G

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

D

Turn-off delay time

V R

DD G

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

D

Fall time

V R

DD G

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

D

= 25°C, unless otherwise specified

at

T

j

Symbol Values Unit

min. typ. max.

g

fs

= 0.2 A

C

iss

0.12 0.18 -

- 40 60

C

oss

- 15 25

C

rss

- 5 10

t

d(on)

= 0.29 A

- 5 8

t

r

= 0.29 A

- 8 12

t

d(off)

= 0.29 A

- 12 16

t

f

= 0.29 A

- 17 22

S

pF

ns

Semiconductor Group

3 12/05/1997

BS 170

Electrical Characteristics,

= 25°C, unless otherwise specified

at

T

j

Parameter

Reverse Diode

Inverse diode continuous forward current

= 25 °C

T

A

Inverse diode direct current,pulsed

= 25 °C

T

A

Inverse diode forward voltage

V

GS

= 0 V,

= 0.5 A

I

F

Symbol Values Unit

min. typ. max.

I

S

A

- - 0.3

I

SM

- - 1.2

V

SD

V

- 0.9 1.2

Semiconductor Group

4 12/05/1997

BS 170

Power dissipation

P

tot

P

tot

T

= ƒ(

)

A

0.70 W

0.60

0.55

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

0 20 40 60 80 100 120 °C 160

Drain current

I

parameter:

T

A

= ƒ(

D

I

D

T

)

A

≥

V

0.32

A

0.24

0.20

0.16

0.12

0.08

0.04

0.00 0 20 40 60 80 100 120 °C 160

GS

10 V

T

A

Safe operating area

parameter :

D

= 0.01,

I

=f(

D

T

C

V

DS

=25°C

)

Drain-source breakdown voltage

V

(BR)DSS

V

(BR)DSS

71

V

68

66

64

62

60

58

56

54

T

= ƒ(

)

j

-60 -20 20 60 100 °C 160

T

j

Semiconductor Group

5 12/05/1997

BS 170

Typ. output characteristics

ƒ(

I

parameter:

V

=

D

I

D

)

DS

t

= 80 µs ,

p

0.70

P

= 1W

tot

A

0.60

0.55

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0

l

k

j

i

T

= 25 °C

j

h

V

g

f

e

d

c

b

a

[V]

GS a 2.0

b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 6.0 i 7.0 j 8.0 k 9.0 l 10.0

V

DS

Typ. drain-source on-resistance

R

DS (on)

parameter:

R

DS (on)

ƒ(

I

=

16

)

D

t

= 80 µs,

p

a

T

b

= 25 °C

j

c

d

Ω

12

10

8

6

4

V

[V] =

GS

2

a

b

c

d

e

f

g

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0

0.00 0.10 0.20 0.30 0.40 A 0.60

6.0

7.0

8.0

h

9.0

e

f

g

h

i

j

i

j

10.0

I

D

Typ. transfer characteristics

parameter:

V

≥

2 x

DS

0.75

0.65

I

0.60

D

0.55

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

t

= 80 µs

p

I

R

x

D

DS(on)max

A

0 1 2 3 4 5 6 7 8 V 10

ID = f(V

GS

V

GS

)

Typ. forward transconductance

parameter:

V

≥

2 x

DS

0.30

0.26

g

0.24

fs

0.22

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0.00

t

= 80 µs,

p

I

R

x

D

DS(on)max

S

0.00 0.10 0.20 0.30 0.40 0.50 A 0.65

g

fs

= f (

I

D

I

)

D

Semiconductor Group

6 12/05/1997

BS 170

Drain-source on-resistance

R

DS (on)

parameter:

R

DS (on)

T

= ƒ(

)

j

13

I

= 0.2 A,

D

V

GS

= 10 V

Ω

11 10

9 8 7 6 5 4 3 2 1

0

-60 -20 20 60 100 °C 160

98%

typ

Gate threshold voltage

V

GS (th)

parameter:

V

GS(th)

T

j

T

= ƒ(

4.6 V

4.0

3.6

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0

)

j

V

-60 -20 20 60 100 °C 160

GS

=

V

I

,

= 1 mA

DS

D

98%

typ

2%

T

j

Typ. capacitances

C = f (V

parameter:

C

)

DS

V

=0V, f = 1 MHz

GS

3

10

pF

2

10

1

10

0

10

0 5 10 15 20 25 30 V 40

Forward characteristics of reverse diode

I

parameter:

C

iss

C

oss

C

rss

V

DS

= ƒ(

F

I

F

V

)

SD

Tj, t

= 80 µs

p

1

10

A

0

10

-1

10

T

= 25 °C typ

j

T

= 150 °C typ

j

T

= 25 °C (98%)

j

T

= 150 °C (98%)

j

-2

10

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

V

SD

Semiconductor Group

7 12/05/1997