Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D071
BRY62
Silicon controlled switch
Product specification
Supersedes data of 1997 Jul 21
1999 Apr 22
Page 2
Philips Semiconductors Product specification
Silicon controlled switch BRY62
DESCRIPTION
Silicon planar PNPN switch in a
SOT143B plastic package. It is an
integrated PNP/NPN transistor pair,
with all electrodes accessible.
PINNING
PIN DESCRIPTION
1 anode gate
2 anode
3 cathode
APPLICATIONS
4 cathode gate
• Switching applications.
MARKING
TYPE
NUMBER
MARKING
CODE
BRY62 A51
handbook, 2 columns
12
Top view
Fig.1 Simplified outline (SOT143B) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
34
MSB014
a
ag
kg
MBB068
k
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
NPN transistor
V
CBO
V
CER
V
EBO
I
C
I
CM
I
E
I
ERM
collector-base voltage open emitter − 70 V
collector-emitter voltage RBE=10kΩ−70 V
emitter-base voltage open collector − 5V
collector current (DC) note 1 − 175 mA
peak collector current note 2 − 175 mA
emitter current (DC) −−175 mA
repetitive peak emitter current tp=10µs; δ = 0.01 −−2.5 A
PNP transistor
V
V
V
I
E
I
ERM
CBO
CEO
EBO
collector-base voltage open emitter −−70 V
collector-emitter voltage open base −−70 V
emitter-base voltage open collector −−70 V
emitter current (DC) − 175 mA
repetitive peak emitter current tp=10µs; δ = 0.01 − 2.5 A
1999 Apr 22 2
Page 3
Philips Semiconductors Product specification
Silicon controlled switch BRY62
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Combined device
P
tot
T
stg
T
j
T
amb
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature see Fig.14 −65 +150 °C
Notes
1. Provided the IE rating is not exceeded.
2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This
capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series
resistance of 100 kΩ.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air 500 K/W
≤ 25 °C − 250 mW
amb
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
NPN transistor
I
CER
I
EBO
V
CEsat
V
BEsat
h
FE
f
T
C
c
C
e
collector cut-off current VCE=70V; RBE=10kΩ−100 nA
=70V; RBE=10kΩ; Tj= 150 °C − 10 µA
V
CE
emitter cut-off current IC= 0; VEB=5V; Tj= 150 °C − 10 µA
collector-emitter saturation voltage IC= 10 mA; IB=1mA − 500 mV
base-emitter saturation voltage IC= 10 mA; IB=1mA − 900 mV
DC current gain IC= 10 mA; VCE=2V 50 −
transition frequency IC= 10 mA; VCE= 2 V; f = 100 MHz 100 − MHz
collector capacitance IE=ie= 0; VCB= 20 V; f = 1 MHz − 5pF
emitter capacitance IC=ic= 0; VEB= 1 V; f = 1 MHz − 25 pF
PNP transistor
I
CEO
I
EBO
h
FE
collector cut-off current IB= 0; VCE= −70 V; Tj= 150 °C −−10 µA
emitter cut-off current IC= 0; VEB= −70 V; Tj= 150 °C −−10 µA
DC current gain IE= 1 mA; VCB= −5V 3 15
Combined device
V
AK
I
H
forward on-state voltage R
holding current R
=10kΩ
KG-K
= 50 mA; IAG=0 − 1.4 V
I
A
= 50 mA; IAG= 0; Tj= − 55 °C − 1.9 V
I
A
I
= 1 mA; IAG=10mA − 1.2 V
A
=10kΩ;IAG= 10 mA;
KG-K
− 1mA
VBB= −2 V; (see Fig.5)
1999 Apr 22 3
Page 4
Philips Semiconductors Product specification
Silicon controlled switch BRY62
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Switching times
t
on
t
off
turn-on time V
turn-off time R
a (anode)
(e )
2
PNP transistor
kg (cathode gate)
(b ,c )
12
k (cathode)
(e )
ag (anode gate)
(c ,b )
NPN transistor
1
12
MBB680
= −0.5 to 4.5 V; R
KG-K
KG-K
=1kΩ;
− 0.25 µs
see Figs 6 and 7
V
= −0.5 to 0.5 V; R
KG-K
=10kΩ; see Figs 8 and 9 − 15 µs
KG-K
handbook, halfpage
=10kΩ− 1.5 µs
KG-K
e
2
P
b ,c
12
N
P
N
P
N
MBB681
e
1
c ,b
12
Fig.2 Two transistor equivalent circuit.
1999 Apr 22 4
Fig.3 PNPN silicon controlled switch structure.
Page 5
Philips Semiconductors Product specification
Silicon controlled switch BRY62
handbook, halfpage
Fig.4 Silicon controlled switch symbol.
a
I
I
KG
kg
I
A
AG
ag
V
AK
−I
K
k
MBB682
handbook, halfpage
V
BB
R
KG-K
I
A
I
AG
a
ag
DUT
k
kg
MBB683
Fig.5 Equivalent test circuit for holding current.
V
(V)
i
4.5
handbook, halfpage
MBB687
handbook, halfpage
+12 V
2.7 kΩ
16 kΩ
R
KG-K
V
I
MBB685
V
AK
+50 V
Fig.6 Test circuit for turn-on time.
1999 Apr 22 5
90 %
10 %
time
t
on
time
V
AG-K
–0.5
0
Fig.7 Pulse duration increased until dashed curve
disappears.
Page 6
Philips Semiconductors Product specification
Silicon controlled switch BRY62
handbook, halfpage
+12 V +50 V
16 kΩ2.7 kΩ1 kΩ
MBB684
V
AK
mercury
wetted
contact
R
C
KG-K
Fig.8 Test circuit for turn-off time.
V
handbook, halfpage
AK
(V)
12
t
q
0
– 12
C < C
Fig.9 Capacitance increased until C = C
dashed curve disappears.
C = C
opt
MBB686
opt
time
opt
= 5 V
IAG (mA)
amb
MBB584
=25°C.
1.2
handbook, halfpage
h
FE
X
0.8
0.4
0
0 100
X is the value of hFEat IC= 10mA; V
2 V
V
AG-K
50
= 2 V; T
AG-K
Fig.10 Normalized DC current gain as a function of
anode gate current.
1.8
handbook, halfpage
h
FE
X
1.4
1.0
0.6
0
X is the value of hFEat IAG= 10 mA; V
50 150
AG-K
100
= 2 V; T
MBB583
o
T ( C)
amb
=25°C.
amb
Fig.11 Normalized DC current gain as a function of
ambient temperature.
1999 Apr 22 6
Page 7
Philips Semiconductors Product specification
Silicon controlled switch BRY62
100
T ( C)
amb
MBB581
1.2
handbook, halfpage
V
AK
X
1
0.8
0.6
50 0 50 150
X is the value of VAK at IC= 10 mA; IAG= 10 mA; IA= 1 mA;
V
BB
= −2 V; R
KG-K
=10kΩ; T
amb
=25°C.
Fig.12 Normalized anode-cathode voltage as a
function of ambient temperature.
100
T
amb
MBB587
(oC)
1.2
handbook, halfpage
I
H
X
1.1
1
0.9
0.8
o
−50 0 50 150
X is the value of IH at IC= 10 mA; IAG= 10 mA; VBB= −2V;
R
kg-K
=10kΩ; T
amb
=25°C.
Fig.13 Normalized holding current as a function of
ambient temperature.
300
handbook, halfpage
P
tot
(mW)
200
100
0
0
50 150 150
MBB580
o
T ( C)
amb
Fig.14 Power derating curve.
1999 Apr 22 7
Page 8
Philips Semiconductors Product specification
Silicon controlled switch BRY62
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads SOT143B
D
y
e
b
p
B
w M
E
v M
A
B
H
E
A
X
34
Q
A
A
1
21
b
1
e
1
detail X
L
c
p
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
mm
1.1
0.9
OUTLINE
VERSION
SOT143B
1
A
max
0.1
b
c
D
b
0.48
0.38
1
p
0.88
0.15
0.78
0.09
IEC JEDEC EIAJ
E
3.0
1.4
2.8
1.2
REFERENCES
e
1.9
1999 Apr 22 8
e
1.7
H
L
E
1
2.5
2.1
0.45
0.15
p
0.55
0.45
EUROPEAN
PROJECTION
ywvQ
0.1 0.10.2
ISSUE DATE
97-02-28
Page 9
Philips Semiconductors Product specification
Silicon controlled switch BRY62
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 22 9
Page 10
Philips Semiconductors Product specification
Silicon controlled switch BRY62
NOTES
1999 Apr 22 10
Page 11
Philips Semiconductors Product specification
Silicon controlled switch BRY62
NOTES
1999 Apr 22 11
Page 12
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© Philips Electronics N.V. 1999 SCA63
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Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 115002/00/03/pp12 Date of release: 1999 Apr 22 Document order number: 9397 75005727
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