Datasheet BRY39 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D082

BRY39

Programmable unijunction
transistor/
Silicon controlled switch

Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04

1997 Jul 24

Philips Semiconductors Product specification

Programmable unijunction transistor/
Silicon controlled switch

FEATURES

• Silicon controlled switch

• Programmable unijunction

transistor.

APPLICATIONS

• Switching applications such as:
– Motor control
– Oscillators
– Relay replacement
– Timers
– Pulse shapers, etc.

DESCRIPTION

Silicon planar PNPN switch or trigger
device in a TO-72 metal package.
It is an integrated PNP/NPN transistor
pair with all electrodes accessible.

PINNING

PIN DESCRIPTION

ok, halfpage

1 cathode
2 cathode gate
3 anode gate (connected to case)
4 anode

4

3

handbook, halfpage

1

2

MSB028

kg

Fig.1 Simplified outline (TO-72) and symbol.

a

k

MGL168

BRY39

ag

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MAX. UNIT

Silicon controlled switch

PNP TRANSISTOR

V

EBO

NPN TRANSISTOR

V

CBO

I

ERM

P

tot

T

j

V

AK

I

H

t

on

t

off

emitter-base voltage open collector −70 V

collector-base voltage open emitter 70 V
repetitive peak emitter current −2.5 A
total power dissipation T

≤ 25 °C 275 mW

amb

junction temperature 150 °C
forward on-state voltage IA= 50 mA; IAG= 0; R
holding current IAG= 10 mA; VBB= −2 V; R

=10kΩ 1.4 V

KG-K

=10kΩ 1mA

KG-K

turn-on time 0.25 µs
turn-off time 15 µs

Programmable unijunction transistor

V

GA

I

A

T

j

I

p

gate-anode voltage 70 V
anode current (DC) T

≤ 25 °C 175 mA

amb

junction temperature 150 °C
peak point current VS=10V; RG=10kΩ 0.2 µA

1997 Jul 24 2

Philips Semiconductors Product specification

Programmable unijunction transistor/

BRY39

Silicon controlled switch

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

P

tot

T

stg

T

j

T

amb

Silicon controlled switch

V

CBO

V

CER

V

CEO

V

EBO

I

C

I

CM

I

E

I

ERM

total power dissipation T

≤ 25 °C − 275 mW

amb

storage temperature −65 +200 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

collector-base voltage open emitter

PNP −−70 V
NPN − 70 V

collector-emitter voltage RBE=10kΩ

PNP −−V
NPN − 70 V

collector-emitter voltage open base

PNP −−70 V
NPN −−V

emitter-base voltage open collector

PNP −−70 V
NPN − 5V

collector current (DC) note 1

PNP −−
NPN − 175 mA

peak collector current note 2

PNP −−
NPN − 175 mA

emitter current (DC)

PNP − 175 mA
NPN −−175 mA

repetitive peak emitter current tp=10µs; δ = 0.01

PNP − 2.5 A
NPN −−2.5 A

Programmable unijunction transistor

V

GA

I

A

gate-anode voltage − 70 V
anode current (AV) T

≤ 25 °C − 175 mA

amb

1997 Jul 24 3

Philips Semiconductors Product specification

Programmable unijunction transistor/

BRY39

Silicon controlled switch

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

ARM

I

ASM

dI

/dt rate of rise of anode current IA≤ 2.5 A − 20 A/µs

A

Notes

1. Provided the IE rating is not exceeded.

2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This

capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series
resistance of 100 kΩ.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

CHARACTERISTICS

=25°C unless otherwise specified.

T

amb

repetitive peak anode current tp=10µs; δ = 0.01 − 2.5 A
non-repetitive peak anode current tp=10µs; Tj= 150 °C − 3A

thermal resistance from junction to ambient in free air 450 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Silicon controlled switch

INDIVIDUAL PNP TRANSISTOR

I

CEO

I

EBO

h

FE

INDIVIDUAL NPN TRANSISTOR

I

CER

I

EBO

V

CEsat

V

BEsat

h

FE

C

c

C

e

f

T

COMBINED DEVICE

V

AK

I

H

collector cut-off current IB= 0; VCE= −70 V; Tj= 150 °C −−10 µA
emitter cut-off current IC= 0; VEB= −70 V; Tj= 150 °C −−10 µA
DC current gain IE= 1 mA; VCE= −5V 3 15

collector cut-off current VCE=70V; RBE=10kΩ−100 nA

V

=70V; RBE=10kΩ; Tj= 150 °C − 10 µA

CE

emitter cut-off current IC= 0; VEB=5V; Tj= 150 °C − 10 µA
collector-emitter saturation voltage IC= 10 mA; IB=1mA − 0.5 V
base-emitter saturation voltage IC= 10 mA; IB=1mA − 0.9 V
DC current gain IC= 10 mA; VCE=2V 50 −
collector capacitance IE=ie= 0; VCB=20V − 5pF
emitter capacitance IC=ic= 0; VEB= 1 V; f = 1 MHz − 25 pF
transition frequency IC= 10 mA; VCE= 2 V; f = 100 MHz 100 − MHz

forward on-state voltage R

holding current VBB= −2 V; IAG= 10 mA;

=10kΩ

KG-K

I

= 50 mA; IAG=0 − 1.4 V

A

= 50 mA; IAG= 0; Tj= −55 °C − 1.9 V

I

A

= 1 mA; IAG=10mA − 1.2 V

I

A

− 1mA

R

=10kΩ; see Fig.14

KG-K

1997 Jul 24 4

Philips Semiconductors Product specification

Programmable unijunction transistor/

BRY39

Silicon controlled switch

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

SWITCHING TIMES

t

on

t

off

Programmable unijunction transistor

I

p

I

v

V

offset

I

GAO

I

GKS

V

AK

V

OM

t

r

turn-on time V

= −0.5 to 4.5 V; R

KG-K

KG-K

=1kΩ;

− 0.25 µs

see Figs 15 and 16
V

= −0.5 to 0.5 V; R

KG-K

turn-off time R

=10kΩ; see Figs 17 and 18 − 15 µs

KG-K

peak point current VS= 10 V; RG=10kΩ;

=10kΩ− 1.5 µs

KG-K

− 0.2 µA

see Figs 3 and 8
V

= 10 V; RG= 100 kΩ;

S

− 0.06 µA

see Figs 3 and 8

valley point current VS= 10 V; RG=10kΩ;

− 2 µA

see Figs 3 and 8
V

= 10 V; RG= 100 kΩ;

S

− 1 µA

see Figs 3 and 8

offset voltage typical curve; IA= 0; for VP and V

−−V

S

see Fig.8
gate-anode leakage current IK= 0; VGA=70V − 10 nA
gate-cathode leakage current VAK= 0; VKG=70V − 100 nA
anode-cathode voltage IA= 100 mA − 1.4 V
peak output voltage VAA= 20 V; C = 10 nF;

6 − V

see Figs 9 and 11
rise time VAA= 20 V; C = 10 nF; see Fig.11 − 80 ns

Explanation of symbols

For application of the BRY39 as a programmable
unijunction transistor, only the anode gate is used. To
simplify the symbols, the term gate instead of anode gate
will be used (see Fig.2).

handbook, halfpage

anode

a

k

cathode

g

gate

MBB700

Fig.2 Programmable unijunction transistor

explanation of symbols.

1997 Jul 24 5

Philips Semiconductors Product specification

Programmable unijunction transistor/
Silicon controlled switch

handbook, halfpage

I

A

(1)

C

1 nF

DUT

R

a

G

g

V

k

MEA142

S

handbook, halfpage

DUT

MEA141

+V

BRY39

B

R2

R1

Fig.3 Programmable unijunction transistor test

circuit for peak and valley points.

handbook, halfpage

I

A

R1R

R

1

R1R

1

R

2

2
2

V

B

RG =

V

AK

DUT

MBB699

VS =

R

Fig.4 Programmable unijunction transistor with

‘program’ resistors R1 and R2.

handbook, halfpage

I

GAO

DUT

MBB697

V

GA

Fig.5 Programmable unijunction transistor

equivalent test circuit for characteristics
testing.

1997 Jul 24 6

Fig.6 Programmable unijunction transistor

equivalent test circuit for gate-anode
leakage current.

Philips Semiconductors Product specification

Programmable unijunction transistor/
Silicon controlled switch

handbook, halfpage

DUT

I

GKS

MBB696

V

GK

handbook, halfpage

I

I

(V)

I

(P)

BRY39

A

V

VSV

(P)

AK

MEA143

Fig.7 Programmable unijunction transistor

equivalent test circuit for gate-cathode
leakage current.

V

1.5
MΩ

DUT

AA

16 kΩ

V

O

27 kΩ20 Ω

MBB698

handbook, halfpage

C

Fig.8 Programmable unijunction transistor

offset voltage.

handbook, halfpage

V

O

V

OM

90 %

10 %

t

r

MBB701

time

Fig.9 Programmable unijunction transistor test

circuit for peak output voltage.

1997 Jul 24 7

Fig.10 Programmable unijunction transistor peak

output voltage.

Philips Semiconductors Product specification

Programmable unijunction transistor/
Silicon controlled switch

a (anode)

(e )

2

PNP transistor

kg (cathode gate)

(b ,c )

12

k (cathode)

(e )

ag (anode gate)
(c ,b )

12

NPN transistor

1

MBB680

handbook, halfpage

b ,c

12

P
N
P

BRY39

e

2

MBB681

c ,b

12

N
P
N

e

1

Fig.11 Silicon controlled switch two transistor

equivalent circuit.

handbook, halfpage

I

KG

kg

a

I

I

A

AG

ag

V

AK

−I

K

k

MBB682

Fig.12 PNPN silicon controlled switch structure.

R

KG-K

I

A

I

AG

a

ag

DUT

k

kg

MBB683

handbook, halfpage

V

BB

Fig.13 Silicon controlled switch symbol.

1997 Jul 24 8

Fig.14 Silicon controlled switch equivalent test

circuit for holding current.

Philips Semiconductors Product specification

Programmable unijunction transistor/
Silicon controlled switch

handbook, halfpage

+12 V

2.7 kΩ
16 kΩ

R

KG-K

V

I

MBB685

V

AK

+50 V

V

V

(V)

4.5

–0.5

AG-K

i

0

handbook, halfpage

10 %

BRY39

MBB687

90 %

time

t

on

time

Fig.15 Silicon controlled switch test circuit for

turn-on time.

handbook, halfpage

+12 V +50 V

16 kΩ2.7 kΩ1 kΩ

MBB684

mercury
wetted
contact

R

KG-K

C

Fig.16 Silicon controlled switch pulse duration

increased until dashed curve disappears.

V

handbook, halfpage

AK

(V)

12

C = C

V

AK

0

– 12

t

q

C < C

MBB686

opt

opt

time

Fig.17 Silicon controlled switch test circuit for

turn-on time.

1997 Jul 24 9

Fig.18 Silicon controlled switch capacitance

increased until C = C

dashed curve

opt

disappears.

Philips Semiconductors Product specification

Programmable unijunction transistor/
Silicon controlled switch

= 5 V

IAG (mA)

=25 °C.

amb

MBB584

1.2

handbook, halfpage

h

FE

X

0.8

0.4

0

0 100

X =value of hFE at IC= 10 mA; V

2 V

50

AG-K

V

= 2 V; T

AG-K

1.8

handbook, halfpage

h

FE
X

1.4

1.0

0.6
0

X = value of hFE at IAG= 10 mA; V

50 150

AG-K

100

= 2 V; T

BRY39

MBB583

o

T ( C)

amb

=25 °C.

amb

Fig.19 Silicon controlled switch normalized

DC current gain as a function of
anode gate current.

1.2

handbook, halfpage

V

AK

X

1

0.8

0.6
50 0 50 150

X = value of VAK at IA= 1 mA; IAG= 10 mA; VBB= −2V;
R

KG-K

=10kΩ; T

amb

=25 °C.

100

MBB581

o

T ( C)

amb

Fig.20 Silicon controlled switch normalized

DC current gain as a function of
ambient temperature.

1.2

handbook, halfpage

I

H

X

1.1

1

0.9

0.8

−50 0 50 150

X = value of IH at IAG= 10 mA; VBB= −2 V; R

=25 °C.

T

amb

100

KG-K

MBB587

T

amb

=10kΩ;

(oC)

Fig.21 Silicon controlled switch normalized

anode-cathode voltage as a function of
ambient temperature.

1997 Jul 24 10

Fig.22 Silicon controlled switch normalized

holding current as a function of
ambient temperature.

Philips Semiconductors Product specification

Programmable unijunction transistor/
Silicon controlled switch

300

handbook, halfpage

P

tot

(mW)

200

100

0

0

50 150 150

MBB580

o

T ( C)

amb

BRY39

Fig.23 Silicon controlled switch power

4

Z

thj-a

(K/W)

10

3

10

2

10

10

1

handbook, full pagewidth

derating curve.

5

4

10

MBB582

(s)

4

10

3

10

2

10

1

10

10110

2

10

3

10

t

p

Fig.24 Silicon controlled switch thermal impedance as a function of pulse duration.

1997 Jul 24 11

Philips Semiconductors Product specification

Programmable unijunction transistor/
Silicon controlled switch

10

handbook, full pagewidth

I

A

(A)

δ = 0.01

0.02

0.05

1

0.1

0.2

0.5

−1

10

−2

10

−2

10

−1

10

BRY39

MBB585

2

101

tp (ms)

10

T

=25 °C.

amb

10

handbook, full pagewidth

I

A

(A)

δ = 0.01

0.02

0.05

1

0.1

0.2

0.5

−1

10

−2

10

−2

10

Fig.25 Silicon controlled switch anode current as a function of pulse duration.

−1

10

101

tp (ms)

MBB586

2

10

T

=70 °C.

amb

Fig.26 Silicon controlled switch anode current as a function of pulse duration.

1997 Jul 24 12

Philips Semiconductors Product specification

Programmable unijunction transistor/

BRY39

Silicon controlled switch

PACKAGE OUTLINE

Metal-can cylindrical single-ended package; 4 leads SOT18/9

j

B

α

1

k

4

D

2

1

seating plane

w

M MBM

A

b

3

a

5.45

5.30

D

0 5 10 mm

scale

jkL

1

4.70

1.05

1.0

4.55

0.95

0.9

14.5

13.5

A

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT w

mm

AabDD

5.31

4.74

2.54

0.46

0.42

A L

0.36

45°

α

OUTLINE
VERSION

SOT18/9 TO-72B12/C7 type 3

IEC JEDEC EIAJ

REFERENCES

1997 Jul 24 13

EUROPEAN

PROJECTION

ISSUE DATE

97-04-18

Philips Semiconductors Product specification

Programmable unijunction transistor/

BRY39

Silicon controlled switch

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Jul 24 14

Philips Semiconductors Product specification

Programmable unijunction transistor/
Silicon controlled switch

NOTES

BRY39

1997 Jul 24 15

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© Philips Electronics N.V. 1997 SCA55
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Printed in The Netherlands 117047/00/01/pp16 Date of release: 1997 Jul 24 Document order number: 9397 750 02639