Page 1
查询BRT21供应商
BRT 21, BRT 22, BRT 23
SITAC
With Zero Voltage Switch
Without Zero Voltage Switch
AC switch with zero-voltage detector
•
Electrically insulated between input and output circuit
•
Microcomputer-compatible by very low trigger current
•
UL-tested (file no. E 52744), code letter "J"
•
Available with the following options:
•
Option 1: VDE 0884-approved
Option 6: Pins in 10.16 mm spacing
Option 7: Pins for sourface mounting
BRT 21 H
BRT 21 H
BRT 22 H
AC Switches
Opt.Type Ordering CodeMarking
- 300 mA400 V
V
DRM
600 V- 10 kV/µs
I
TRMS
300 mA 2 mA400 V1 + 6 10 kV/µs
300 mA 2 mA BRT 22 H
I
FT
dv/d
t
cr
BRT 21 H10 kV/µs2 mA
BRT 21 H
C67079-A1020-A6
C67079-A1050-A16
C67079-A1021-A6
BRT 22 H
BRT 22 H
BRT 22 H
BRT 22 H
BRT 22 M
BRT 22 M
BRT 23 H
BRT 23 H C67079-A1052-A8
BRT 23 H
BRT 23 H C67079-A1052-A14
BRT 23 M
7 600 V
1 + 6 600 V 300 mA
1 + 7 600 V 2 mA BRT 22 H
300 mA 3 mA600 V1 10 kV/µs
- 10 kV/µs
7 300 mA800 V 10 kV/µs
- 800 V 300 mA 3 mA 10 kV/µs BRT 23 M
800 V 300 mA 2 mA
2 mA300 mA 10 kV/µs
10 kV/µs
10 kV/µs2 mA BRT 22 H
10 kV/µs300 mA
10 kV/µs3 mA300 mA600 V-
BRT 22 H2 mA1 600 V 300 mA
BRT 22 H
BRT 22 M
BRT 22 M
BRT 23 H
BRT 23 H800 V 300 mA 10 kV/µs2 mA6
BRT 23 H2 mA
BRT 23 H1 + 6 800 V 300 mA 10 kV/µs2 mA
C67079-A1051-A5
C67079-A1051-A11
C67079-A1051-A16
C67079-A1051-A17
C67079-A1021-A10
C67079-A1051-A6
C67079-A1022-A6
C67079-A1052-A11
C67079-A1022-A10
Information Package Pin Configuration
1 2 3 4 5 6
50 pcs per tube P-DIP-6 Anode Kathode not
Cathode
A1 do not
A2
connected
Semiconductor Group 1 12.96
connect
Page 2
BRT 21, BRT 22, BRT 23
Maximum Ratings
T
, at Tj = 25 °C, unless otherwise specified.
j
AC Switch
Parameter Symbol Value Unit
Max. Power dissipation
Chip or operating temperature
Storage temperature -40 ...+ 150
Insulation test voltage
1)
P
T
T
V
tot
j
stg
IS
630 mW
-40 ...+ 100
5300
°C
V
RMS
between input/output circuit
(climate in acc. with DIN 40046, part2, Nov.74)
Reference voltage in acc. with VDE 0110 b
(insulation group C)
Creepage tracking resistance
(in acc. with DIN IEC 112/VDE 0303, part 1)
Insulation resistance
V
= 500 V,
IO
V
= 500 V,
IO
T
= 25 °C
A
T
= 100 °C
A
V
C
R
ref
TI
is
≥
≥
500
600
175
10
10
12
11
V
RMS
V
DC
(group IIIa
acc. to DIN
VDE 0109)
Ω
DIN humidity category, DIN 40 040
Creepage distance (input/output circuit) Clearance (input/output circuit) -
-
≥
≥
F
7.2
7.2
Input Circuit
Parameter Symbol UnitValue
Param VR
Continuous forward current
Surge forward current,
t
≤
,
Max. power dissipation, t ≤ 10 µs
10 µs
V
R
I
F
I
FSM(I)
P
tot
6 V
1.5
30 mW
Output Circuit
Parameter
Repetitive peak off-state voltage
RMS on-state current
Single cycle surge current (50 Hz)
Max. power dissipation
Symbol BRT
V
DRM
I
TRMS
I
TSM(I)
P
tot
BRT
21
22
400 600 800
300 mA
3 A
600
mm
mA20
A
UnitBRT
23
V
mW
Semiconductor Group 2 12.96
Page 3
BRT 21, BRT 22, BRT 23
Characteristics
T
at Tj = 25 °C, unless otherwise specified.
j
Input Circuit
Parameter ValuesSymbol Unit
typ. max.min.
Forward Voltage,
I
= 10 mA
F
Reverse current,
V
= 6 V
R
Thermal resistance
2)
V
I
R
R
F
thJA
1.1 V1.35-
- - 10
µA
- - 750 K/W
junction - ambient
Output Circuit
Parameter Symbol Values Unit
min. typ. max.
Critical rate of rise of off-state voltage
V
= 0.67
D
V
= 0.67
D
V
V
DRM
DRM
T
,
= 25 °C
j
T
,
= 80 °C
j
Critical rate of rise of voltage at current
commutation
communication
V
V
= 0.67
= 0.67 V
D
D
V
= 0.67
V
= 0.67 V
D
D
V
DRM
V
DRM
DRM
DRM
T
T
,
= 25 °C, di/d
,
= 25 °C, di/d
j
j
T
,
= 80 °C, di/d
T
,
= 80 °C, di/d
j
j
t
t
≤ 15 A/ms
crq
crq
t
t
≤ 15 A/ms
crq
crq
≤ 15 A/ms
≤15 A/ms
dv/d
dv/d
t
cr
t
crq
10
5
10
5
-
-
-
-
kV/µs
-
-
-
-
I
V
I
I
R
tp
D
H
T
thJA
t
cr
-8 A/µs-
- A2-
- 2.3-
-
-
7
12
30
100
1000
V
µA
50080-
- - 125 K/W
Critical rate of rise of on-state current di/d
Pulse current
tp
≤
5 µs, f = 100 Hz, d
t
≤ 5 µs, f = 100 , d
p
i
/dt ≤ 8 A/ms
i
/dt ≤ 8 A/µs
tp
tp
On-state voltage,
I
= 300 mA
T
Off-state current
T
= 25 °C,
C
T
= 80 °C,
C
V
V
DRM
DRM
Holding current,
V
= 10 V
D
Thermal resistance
2)
junction - ambient
Semiconductor Group 3 12.96
Page 4
BRT 21, BRT 22, BRT 23
Response Characteristics
T
at
= 25 °C, unless otherwise specified.
j
Parameter ValuesSymbol Unit
max.typ.min.
Trigger current 1
V
= 6 V
D
type H
type M
Trigger current 2
V
= 220 V, ƒ = 50 Hz,
op
t
> 10 ms
pF
T
= 100°C
j
type H
type M
Trigger current temperature gradient
I
Inhibit voltage,
I
=
F
FT1
Off-state current in inhibit state
I
I
=
F
FT1
,
V
DRM
Capacitance between input and output circuit
V
= 0 V, f = 1 kHz
R
I
FT1
I
FT2
I
∆
FT1
I
∆
FT2
V
DINH
V
∆
T
∆
I
DINH
C
IO
∆
/
∆
/
DINH
j
0.4
0.4
-
-
T
j
T
j
-
-
-
-
7-
2
3
6
9
14
mA
µA/K
- V128
/
-20-
- 200 µA50
7
- pF-
-Inhibit voltage temperature gradient mV/K
2
1) Static air, SITAC soldered in pcb or base plate.
2) Test AC voltage in acc. with DIN 57883, June 1980.
3) The SITAC switch is soldered in pcb or base plate.
4) Termocouple measurement has to be performed potentially separated to A1 and A2.
The measuring junction should be as near as possible at the case.
T
5) The SITAC zero voltage switch can be triggered only in the hatched area below the
Semiconductor Group 4 12.96
curves.
j
Page 5
Characteristics
at Tj = 25 °C, unless otherwise specified.
T
j
Typical input characteristics
I
V
= ƒ(
F
)
F
BRT 21, BRT 22, BRT 23
Typical output characteristics
I
V
= ƒ(
T
)
T
Current reduction
R
= 125 K/W
thJA
3)
I
TRMS
= ƒ(
T
)
A
Current reduction
R
thJ-PIN5
= 16,5 K/W
I
TRMS
4)
= ƒ(
T
PIN5
)
Semiconductor Group 5 12.96
Page 6
Typical trigger delay time
V
= 200V
D
BRT 21, BRT 22, BRT 23
t
I
= f(
I
/
F
FT25°C
)
gd
Power dissipation
line operation
P
tot
= ƒ(
I
TRMS
)
for 40 ... 60 Hz
Typ. inhibit current
V
= 800 V
D
I
DINH
= ƒ(
I
/
F
I
FT 25°C
)
Typ.static inhibit voltage limit
V
DINHmin
= ƒ(
I
/
F
I
FT 25°C
),parameter:
5)
T
j
Semiconductor Group 6 12.96
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