Page 1
BRT 11, BRT 12, BRT 13
SITAC
AC Switches
Without Zero Voltage Switch
AC switch without zero-voltage detector
•
Electrically insulated between input and output circuit
•
Microcomputer-compatible by very low trigger current
•
UL-tested (file no. E 52744), code letter "J"
•
Available with the following options:
•
Option 1: VDE 0884-approved
Option 6: Pins in 10.16 mm spacing
Option 7: Pins for sourface mounting
Type Opt.
BRT 11 H
BRT 11 M
BRT 12 H
- 300 mA 2 mA600 V BRT 12 H
V
DRM
400 V- 300 mA 10 kV/µs
I
TRMS
I
FT
10 kV/µs
t
cr
BRT 11 H10 kV/µs2 mA300 mA400 VBRT 11 M3 mA
Ordering CodeMarkingdv/d
C67079-A1000-A6
C67079-A1000-A10
C67079-A1001-A6
BRT 12 H
BRT 12 H
BRT 12 H
BRT 12 H
600 V6
1 + 6 300 mA600 V BRT 12 H
300 mA600 V1 10 kV/µs
300 mA 10 kV/µs
BRT 12 M
BRT 12 M
BRT 13 H C67079-A1002-A6
1 3 mA300 mA600 V 10 kV/µs
300 mA
BRT 13 H
BRT 13 H
800 V
300 mA 2 mA BRT 13 H7
- 800 V 300 mA 3 mA 10 kV/µs BRT 13 M
2 mA BRT 12 H
10 kV/µs2 mA
BRT 12 H300 mA
BRT 12 H2 mA600 V7
10 kV/µs2 mA
BRT 12 M10 kV/µs3 mA300 mA600 VBRT 12 M
2 mA 10 kV/µs BRT 13 H- 800 V
10 kV/µs
BRT 13 H6 300 mA800 V 2 mA
10 kV/µs
C67079-A1041-A5
C67079-A1041-A8
C67079-A1041-A11
C67079-A1041-A14
C67079-A1001-A10
C67079-A1041-A6
C67079-A1042-A8
C67079-A1042-A11
C67079-A1002-A10BRT 13 M
Information Package Pin Configuration
1 2 3 4 5 6
50 pcs per tube P-DIP-6 Anode Kathode not
Cathode
A1 do not
A2
connected
Semiconductor Group 1 12.96
connect
Page 2
BRT 11, BRT 12, BRT 13
Maximum Ratings
T
, at Tj = 25 °C, unless otherwise specified.
j
AC Switch
Parameter Symbol Value Unit
Max. Power dissipation
Chip or operating temperature
Storage temperature -40 ...+ 150
Insulation test voltage
1)
P
T
T
V
tot
j
stg
IS
630 mW
-40 ...+ 100
5300
°C
V
RMS
between input/output circuit
(climate in acc. with DIN 40046, part2, Nov.74)
Reference voltage in acc. with VDE 0110 b
(insulation group C)
Creepage tracking resistance
(in acc. with DIN IEC 112/VDE 0303, part 1)
Insulation resistance
V
= 500 V,
IO
V
= 500 V,
IO
T
= 25 °C
A
T
= 100 °C
A
V
C
R
ref
TI
is
≥
≥
500
600
175
10
10
12
11
V
RMS
V
DC
(group IIIa
acc. to DIN
VDE 0109)
Ω
DIN humidity category, DIN 40 040
Creepage distance (input/output circuit) Clearance (input/output circuit) -
-
≥
≥
F
7.2
7.2
Input Circuit
Parameter Symbol UnitValue
Param VR
Continuous forward current
Surge forward current,
t
≤
,
Max. power dissipation, t ≤ 10 µs
10 µs
V
R
I
F
I
FSM(I)
P
tot
6 V
1.5
30 mW
Output Circuit
Parameter
Repetitive peak off-state voltage
RMS on-state current
Single cycle surge current (50 Hz)
Max. power dissipation
Symbol BRT
V
DRM
I
TRMS
I
TSM(I)
P
tot
BRT
11
12
400 600 800
300 mA
3 A
600 mW
mm
mA20
A
UnitBRT
13
V
Semiconductor Group 2 12.96
Page 3
BRT 11, BRT 12, BRT 13
Characteristics
T
at Tj = 25 °C, unless otherwise specified.
j
Input Circuit
Parameter ValuesSymbol Unit
typ. max.min.
Forward Voltage,
I
= 10 mA
F
Reverse current,
V
= 6 V
R
Thermal resistance
2)
V
I
R
R
F
thJA
1.1 V1.35-
- - 10
µA
- - 750 K/W
junction - ambient
Output Circuit
Parameter Symbol Values Unit
min. typ. max.
Critical rate of rise of off-state voltage
V
= 0.67
D
V
= 0.67
D
V
V
DRM
DRM
T
,
= 25 °C
j
T
,
= 80 °C
j
Critical rate of rise of voltage at current
commutation
communication
V
= 0.67
D
V
= 0.67
D
V
V
DRM
DRM
T
,
= 25 °C, di/d
j
T
,
= 80 °C, di/d
j
t
≤ 15 A/ms
crq
t
≤ 15 A/ms
crq
dv/d
dv/d
t
cr
t
crq
10
5
10
5
-
-
-
-
kV/µs
-
-
-
-
I
V
I
I
R
tp
D
H
T
thJA
t
cr
-8 A/µs-
- A2-
- 2.3-
-Off-state current
0.5 100 µA
V
50080-
- - 125 K/W
Critical rate of rise of on-state current di/d
Pulse current
tp
≤
5 µs, f = 100 Hz, d
t
≤ 5 µs, f = 100 , d
p
i
/dt ≤ 8 A/µs
i
/dt ≤ 8 A/µs
tp
tp
On-state voltage,
I
= 300 mA
T
T
= 100 °C,
C
V
DRM
=
V
DRM
Holding current,
V
= 10 V
D
Thermal resistance
2)
junction - ambient
Semiconductor Group 3 12.96
Page 4
BRT 11, BRT 12, BRT 13
Response Characteristics
T
at
= 25 °C, unless otherwise specified.
j
Parameter ValuesSymbol Unit
max.typ.min.
Trigger current
V
= 10 V
D
type H
type M
Trigger current temperature gradient
Capacitance between input and output circuit
V
= 0 V, f = 1 kHz
R
I
∆
C
FT
I
IO
FT
0.4
0.8
T
∆
/
-
j
- pF-
-
-
7
2
3
14
mA
µA/K
2
1) Test AC voltage in acc. with DIN 57883, June 1980
2) Static air, SITAC soldered in pcb or base plate.
3) The SITAC switch is soldered in pcb or base plate.
4) Thermocouple measurement has to be performed potentially separated to A1 and A2. The measuring
junction should be as near as possible at the case.
Semiconductor Group 4 12.96
Page 5
Characteristics
at Tj = 25 °C, unless otherwise specified.
T
j
Typical input characteristics
I
V
= ƒ(
F
)
F
BRT 11, BRT 12, BRT 13
Typical output characteristics
I
V
= ƒ(
T
)
T
Current reduction
R
= 125 K/W
thJA
3)
I
TRMS
= ƒ(
T
)
A
Current reduction
R
thJ-PIN5
= 16,5 K/W
I
TRMS
4)
= ƒ(
T
PIN5
)
Semiconductor Group 5 12.96
Page 6
Typical trigger delay time
V
= 200V
D
BRT 11, BRT 12, BRT 13
t
I
= f(
I
/
F
FT25°C
)
gd
Power dissipation
line operation
P
tot
= ƒ(
I
TRMS
)
for 40 ... 60 Hz
Typical off-state current
V
= 800V
D
I
D
= f(
T
)
j
Pulse trigger current
I
normalized to
FTN
V
= 220 V, f= 40 ... 60 Hz typ.
op
I
FTN
I
refering to
FT
= f(
t
pIF
t
)
pIF
≥ 1 ms
Semiconductor Group 6 12.96
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