Datasheet BRT11, BRT12, BRT13 Specification

i179004-10

BRT11, BRT12, BRT13

www.vishay.com

Vishay Semiconductors

Optocoupler, Phototriac Output, Non-Zero Crossing

FEATURES

•I

= 300 mA

TRMS

• High static dV/dt < 10 000 V/μs

• Electrically insulated between input and output
circuit

• Microcomputer compatible - very low trigger
current

• Trigger current

- (I

< 1.2 mA) BRT12F

FT

- (IFT < 2 mA) BRT11H, BRT12H, BRT13H

< 3 mA) BRT11M, BRT12M, BRT13M

- (I

FT

• Non-zero voltage detectors high input sensitivity

• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC

NC

1

A

2

C

3

6

MT2

5

NC

4

MT1

DESCRIPTION

The BRT11, BRT12, and BRT13 product family consists of
AC optocouplers non-zero voltage detectors consisting of
two electrically insulated lateral power ICs which integrate a
thyristor system, a photo detector and noise suppression at

APPLICATIONS

• Industrial controls

• Office equipment

• Consumer appliances

the output and an IR GaAs diode input.

AGENCY APPROVALS

• UL 1577, file no. E52744 system code H

• DIN EN 60747-5-2 (VDE 0844)/DIN EN 60747-5-5
(pending) available with option 1

•CQC

ORDERING INFORMATION

DIP-6

BRT1#x-X0##T

PART NUMBER PACKAGE OPTION TAPE

V

(V)

AGENCY
CERTIFIED/PACKAGE

UL IFT = 2 mA IFT = 3 mA IFT = 1.2 mA IFT = 2 mA IFT = 3 mA IFT = 2 mA IFT = 3 mA

DIP-6 BRT11H BRT11M BRT12F BRT12H BRT12M BRT13H BRT13M

DIP-6, 400 mil, option 6 - - BRT12F-X006 BRT12H-X006 - BRT13H-X006 -

SMD-6, option 7 - - BRT12F-X007T

SMD-6, option 9 - - - BRT12H-X009T - BRT13H-X009T -

UL, VDE IFT = 2 mA IFT = 3 mA IFT = 1.2 mA IFT = 2 mA IFT = 3 mA IFT = 2 mA IFT = 3 mA

DIP-6 - - - BRT12H-X001 BRT12M-X001 - -

DIP-6, option 6 - - BRT12F-X016 BRT12H-X016 BRT12M-X016 BRT13H-X016 -

SMD-6, option 7 - - - - - BRT13H-X017T

Note

(1)

Also available in tube, do not put T on the end.

≤ 400 ≤ 600 ≤ 800

(1)

DRM

BRT12H-X007T

(1)

AND

REEL

- BRT13H-X007T

7.62 mm

Option 7

> 0.7 mm

Option 6

10.16 mm

Option 9

> 0.1 mm

(1)

(1)

-

-

Rev. 1.6, 02-Dec-11

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

Document Number: 83689

www.vishay.com

BRT11, BRT12, BRT13

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise specified)

amb

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

INPUT

Reverse voltage V

Forward current I

Surge forward current I

Power dissipation t ≤ 10 μs P

R

F

FSM

diss

6V

20 mA

1.5 A

30 mW

OUTPUT

BRT11 V

Repetitive peak off-state voltage

BRT12 V

BRT13 V

RMS on-state current I

Single cycle surge current 50 Hz I

Power dissipation P

DRM

DRM

DRM

TRMS

TSM

diss

400 V

600 V

800 V

300 mA

3A

600 mW

COUPLER

Maximum power dissipation P

tot

630 mW

Isolation test voltage
(between emitter and detector, climate
per DIN 500414, part 2, Nov. 74)

(1)

Reference voltage in accordance
with VDE 0110 b

Reference voltage in accordance
with VDE 0110 b (insulation group C)

V

ISO

V

ref

V

ref

5300 V

500 V

600 V

RMS

RMS

DC

Creepage distance ≥ 7.2 mm

Clearance distance ≥ 7.2 mm

Comparative tracking index per
DIN IEC 112/VDE 0303 part 1

Isolation resistance

Storage temperature range T

Ambient temperature range T

group IIIa according to

DIN VDE 0109

V

= 500 V, T

IO

V

= 500 V, T

IO

= 25 °C R

amb

= 100 °C R

amb

CTI ≥ 175

IO

IO

stg

amb

≥ 10

≥ 10

- 40 to + 150 °C

- 40 to + 100 °C

12

11

Ω

Ω

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.

(1)

Test AC voltage in accordance with DIN 57883, June 1980.

Rev. 1.6, 02-Dec-11

2

Document Number: 83689

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

t

gd

= f(IF/IFT25 °C)

V

D

= 200 V

10

0

5

10

1

10

2

5

10

0

5

10

1

5

10

2

10

3

IF/I

FT25°C

17239

t

gd

TJ = 25°C

100°C

BRT11, BRT12, BRT13

Vishay Semiconductors

ELECTRICAL CHARACTERISTICS (T

= 25 °C, unless otherwise specified)

amb

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

INPUT

Forward voltage I

Reverse current V

Thermal resistance,
junction to ambient

(1)

= 10 mA V

F

= 6 V I

R

F

R

R

thJA

1.1 1.35 V

10 μA

750 °C/W

OUTPUT

400 μA

Peak off-state voltage I

D(RMS)

= 100 μA

BRT11

BRT12 600 μA

V

DM

BRT13 800 μA

Off-state current T

On-state voltage I

Pulse current

Critical rate of rise of off-state
voltage

Critical rate of rise of voltage at
current commutation

Critical rate of rise of on-state at
current

Holding current V

Thermal resistance, junction to
ambient

= 80 °C, V

C

= 300 mA V

T

t

≤ 5 μs, f = 100 Hz,

p

dI

/dt ≤ 8 A/μs

tp

V

= 0.67 V

D

V

= 0.67 V

D

V

= 0.67 V

D

V

= 0.67 V

D

DRM

dI/dt

≤ 15 A/ms

crq

DRM

dI/dt

≤ 15 A/ms

crq

= 10 V I

D

DRM

, Tj = 25 °C dV/dt

DRM

, Tj = 80 °C dV/dt

DRM

, Tj = 25 °C,

, Tj = 80 °C,

I

I

dV/dt

dV/dt

dI/dt

R

thJA

D

T

tp

cr

cr

crq

crq

cr

H

10 kV/μs

5kV/μs

10 kV/μs

5kV/μs

8A/μs

0.5 100 μA

2.3 V

2A

80 500 μA

125 °C/W

COUPLER

V

= 10 V, F - versions I

D

Trigger current

V

= 10 V, H - versions I

D

V

= 10 V, M - versions I

D

Trigger current temperature
gradient

Capacitance (input to output) f = 1 MHz, V

= 0 V C

R

FT

FT

FT

ΔI

/ΔT

FT

IO

0.4 2 mA

0.8 3 mA

j

714μA/°C

1.2 mA

2pF

Notes

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

(1)

Static air, SITAC soldered in PCB or base plate.

TYPICAL CHARACTERISTICS (T

Rev. 1.6, 02-Dec-11

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Typical Trigger Delay Time Fig. 2 - Power Dissipation 60 Hz to 60 Hz Line Operation

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

= 25 °C, unless otherwise specified)

amb

3

P

tot

17240

0.6
W

0.5

0.4

0.3

0.2

0.1

0.0

=

(ITRMS

P

tot

0

100

)

180°
120°
90°
60°
30°

200

mA 300

/

TRMS

Document Number: 83689

17242

IFTN=f(tpIF)
IFTN normalized to IFT refering

to tpIF ≥ 1m

Vop=220V,f= 4 0 ...60Hz typ.

17243

I F = ƒ ( V F )

V

F

0.9

= 75 °C

10

- 1

10

- 0

5

10

- 1

10

- 2

mA

5

I

F

1.0 1.1 1.2

V

T

j

25 °C

50 °C

17244

IT= ƒ(VT)

V

T

0

10

- 1

10

- 0

5

10

- 3

10

- 2

mA

5

I

T

T

j

= 25 °C

100 °C

1

23V4

17246

I

TRMS = ƒ(TPIN5)

RthJ-PIN5= 16,5 K/W 4)

BRT11, BRT12, BRT13

www.vishay.com

- 3

10

I

D

nA

I

= f(Tj)

D

V

= 800 V

D

- 2

10

5

- 1

10

5

- 0

10

5

- 1

10

0

17241

20 40 60

100

°C

80

T

J

Vishay Semiconductors

Fig. 3 - Typical Off-State Current

Fig. 4 - Pulse Trigger Current

Fig. 6 - Typical Output Characteristics

400

I

TRMS

mA

300

200

100

0

0 20 40

17245

R

Fig. 7 - Current Reduction

I

TRMS

= 125 K/W 3)

thJA

60

= ƒ ( T A)

80

°C

T

100

A

Rev. 1.6, 02-Dec-11

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 5 - Typical Input Characteristics

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 8 - Current Reduction

4

Document Number: 83689

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20802-40

Option 6

Option 7

Option 8

Option 9

10.16 typ.

7.62 typ.

8 min.

7.62 typ.

4.3 ± 0.3

0.6 min.

10.3 max.

0.7 min.

7.62 typ.

12.1 max.

9.27 min.

10.3 max.

7.62 typ.

8 min.0.6 min.

0.1 ± 0.1

3.6 ± 0.3

3.5 ± 0.3

2.55 ± 0.25

0.1 min.

0.25 ± 0.1

3.5 ± 0.3

PACKAGE DIMENSIONS in millimeters

3

6.4 ± 0.1

4

1 min.

5

8.6 ± 0.1

12

6

1.27 ± 0.05

pin o ne ID

3.555 ± 0.255

ISO method A

0.1755 ± 0.0735

BRT11, BRT12, BRT13

Vishay Semiconductors

9.78 ± 0.25

7.62 ref.

0.30 typ.

4° typ.

0.485 ± 0.025

0.84 typ.

0.84 typ.

2.54 typ.

PACKAGE MARKING (example)

Notes

• Only options 1, and 7 are reflected in the package marking.

• The VDE logo is only marked on option 1 parts.

• Tape and reel suffix (T) is not part of the package marking.

BRT12H

V YWW H 68

0.765 ± 0.255

15° max.

17222

Rev. 1.6, 02-Dec-11

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 83689

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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12

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Document Number: 91000