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Silicon NPN Phototransistor
Description
BPW14N is a high speed silicon NPN epitaxial planar
phototransistor in a standard TO–18 hermetically sealed
metal case.
Its glass lens, featuring a viewing angle of ±12° makes it
insensible to ambient straylight. A base terminal is available to enable biasing and sensitivity control.
Features
D
Hermetically sealed case
D
Lens window
D
Narrow viewing angle ϕ = ± 10
D
Exact central chip alignment
D
Base terminal available
D
High photo sensitivity
D
Fast response times
D
Suitable for visible and near infrared radiation
D
Selected into sensitivity groups
°
BPW14N
94 8486
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Collector Base Voltage V
Collector Emitter Voltage V
Emitter Base Voltage V
Collector Current I
Peak Collector Current tp/T = 0.5, tp x 10 ms I
Total Power Dissipation T
Junction T emperature T
Storage T emperature Range T
Soldering T emperature t x 5 s T
Thermal Resistance Junction/Ambient R
Thermal Resistance Junction/Case R
x 25 °C P
amb
CBO
CEO
EBO
C
CM
tot
j
stg
sd
thJA
thJC
32 V
32 V
5 V
50 mA
100 mA
310 mW
150
–55...+150
260
400 K/W
150 K/W
°
C
°
C
°
C
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96
1 (6)
Page 2
BPW14N
ge,
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown
Voltage
Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E=0 C
Collector Base Capacitance VCB = 5 V, f = 1 MHz, E=0 C
Angle of Half Sensitivity ϕ ±10 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time VS=5V, IC=5mA, RL=100
Turn–Off Time VS=5V, IC=5mA, RL=100
Cut–Off Frequency VS=5V, IC=5mA, RL=100
Type Dedicated Characteristics
T
= 25_C
amb
IC = 1 mA V
IC = 1 mA, IB = 100 mA V
W
W
W
(BR)CEO
CEO
CEO
CBO
l
p
l
0.5
CEsat
t
on
t
off
f
c
32 V
1 100 nA
5.7 pF
6.5 pF
780 nm
520...950 nm
0.3 V
3.2
2.7
170 kHz
m
s
m
s
Parameter Test Conditions T ype Symbol Min Typ Max Unit
Collector Light Current Ee=1mW/cm2,
l
=950nm, VCE=5V
BPW14NB I
BPW14NC I
ca
ca
1.0 1.5 2.0 mA
1.7 3.0 mA
2 (6)
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96
Page 3
BPW14N
Typical Characteristics (T
= 25_C unless otherwise specified)
amb
800
600
R
thJC
400
200
R
tot
P – Total Power Dissipation ( mW )
thJA
0
125
150
94 8329
0 25 50 75 100
– Ambient Temperature ( °C )
T
amb
Figure 1. Total Power Dissipation vs. Ambient Temperature
6
10
5
10
4
10
3
10
VCE=20V
10
BPW14NC
BPW14NB
1
0.1
ca
I – Collector Light Current ( mA )
VCE=5V
l
=950nm
0.01
0.01 0.1 1
94 8339
Ee – Irradiance ( mW/cm2 )
Figure 4. Collector Light Current vs. Irradiance
10
l
=950nmBPW14NB
Ee=1mW/cm
1
0.5mW/cm
10
2
2
2
10
1
CEO
10
I – Collector Dark Current ( nA )
0
94 8330
10
20
50 100
T
– Ambient Temperature ( °C )
amb
150
Figure 2. Collector Dark Current vs. Ambient Temperature
3.5
3.0
2.5
VCE=5V
E
=1mW/cm
e
l
=950nm
2
2.0
1.5
1.0
ca rel
0.5
I – Relative Collector Current
0
150
94 8331
0 50 100
– Ambient Temperature ( °C )
T
amb
Figure 3. Relative Collector Current vs. Ambient Temperature
0.2mW/cm
ca
I – Collector Light Current ( mA )
0.1mW/cm
2
2
0.1
100
94 8340
0.1 1 10
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs. Collector Emitter Voltage
20
16
f=1MHz
12
8
4
CEO
C – Collector Emitter Capacitance ( pF )
94 8335
0
0.1 1 10
VCE – Collector Emitter Voltage ( V )
100
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96
3 (6)
Page 4
BPW14N
8
m
6
4
2
off
on
t / t – Turn on / Turn off Time ( s )
0
024 6 12
94 8336
IC – Collector Current ( mA )
VCE=5V
R
=100
L
l
=950nm
0°
10°20
°
30°
W
1.0
t
on
t
off
108
14
0.9
0.8
rel
S – Relative Sensitivity
0.7
0.4 0.2 0 0.2 0.4
0.6
94 8351
40°
50°
60°
70°
80°
0.6
Figure 7. Turn On/Turn Off Time vs. Collector Current
1.0
0.8
0.6
0.4
rel
0.2
l
S ( ) – Relative Spectral Sensitivity
0
400 600 1000
l
– Wavelength ( nm )94 8337
800
Figure 8. Relative Spectral Sensitivity vs. Wavelength
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
4 (6)
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96
Page 5
Dimensions in mm
BPW14N
96 12180
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96
5 (6)
Page 6
BPW14N
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol ( 1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
6 (6)
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
TELEFUNKEN Semiconductors
Rev . A2, 15-Jul-96
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