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Silicon PIN Photodiode
Description
BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view
lens. The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs/GaAlAs IR emitters
(l
=950nm).
p
Lens radius and chip position are perfectly matched to
the chip size, giving high sensitivity without compromising the viewing angle.
In comparison with flat packages the cylindrical lens
package achieves a sensitivity improvement of 20 %.
Features
D
Large radiant sensitive area (A=7.5 mm2)
D
Wide viewing angle ϕ = ± 65
D
Improved sensitivity
D
Fast response times
D
TO–92 plastic package with IR filter
D
Filter designed for 950 nm transmission
°
BPV20F
Vishay Telefunken
94 8387
Applications
Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU...– or
TSI...–Series).
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
T
x 25 °C
amb
t x 5 s
P
T
R
V
j
amb
stg
sd
thJA
60 V
215 mW
100
–55...+100
–55...+100
260
350 K/W
°
C
°
C
°
C
°
C
Document Number 81506
Rev. 2, 20-May-99
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1 (6)
Page 2
BPV20F
y
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 50 mA V
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 10 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Serial Resistance VR = 12 V, f = 1 MHz R
Open Circuit Voltage Ee = 1 mW/cm2, l = 950 nm V
Temp. Coefficient of V
o
Ee = 1 mW/cm2, l = 950 nm TK
Short Circuit Current Ee = 1 mW/cm2, l = 950 nm I
Reverse Light Current Ee = 1 mW/cm2,
l
= 950 nm, VR = 5 V
Temp. Coefficient of I
ra
Ee = 1 mW/cm2,
l
= 950 nm, VR = 10 V
TK
F
(BR)
ro
D
S
o
Vo
k
I
ra
Ira
60 V
40 60
Absolute Spectral Sensitivity VR = 5 V, l = 870 nm s(l) 0.35 A/W
VR = 5 V, l = 950 nm s(l) 0.6 A/W
Angle of Half Sensitivity ϕ ±65 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
l
= 950 nm
l
p
l
0.5
h
Noise Equivalent Power VR=10 V, l=950 nm NEP 4x10
Detectivity VR=10 V, l=950 nm D
Rise Time VR=10 V, RL=1 kW,
l
=820 nm
Fall Time VR=10 V, RL=1 kW,
l
=820 nm
Cut–Off Frequency VR=12 V, RL=1 kW,
l
=870 nm
VR=12 V, RL=1 kW,
l
=950 nm
*
t
r
t
f
f
c
f
c
1 1.3 V
2 30 nA
70 pF
400
360 mV
–2.6 mV/K
55
m
m
0.1 %/K
950 nm
870...1050 nm
90 %
6x10
–14
12
W/√ Hz
cm√Hz/
W
100 ns
100 ns
4 MHz
1 MHz
W
A
A
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Document Number 81506
Page 3
BPV20F
Vishay Telefunken
Typical Characteristics (T
1000
100
10
ro
I – Reverse Dark Current ( nA )
94 8403
1
20 40 60 80
T
– Ambient Temperature ( °C )
amb
VR=10V
= 25_C unless otherwise specified)
amb
100
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.4
1.2
VR=5V
l
=950nm
m
ra
I – Reverse Light Current ( A )
94 8410
100
10
1
0.1 1 10
1mW/cm
0.5mW/cm
0.2mW/cm
0.1mW/cm
0.05mW/cm
0.02mW/cm
2
2
2
2
2
2
V
– Reverse Voltage ( V )
R
l
=950nm
100
Figure 4. Reverse Light Current vs. Reverse Voltage
80
E=0
f=1MHz
60
1.0
0.8
ra rel
I – Relative Reverse Light Current
0.6
020406080
T
94 8409
– Ambient Temperature ( °C )
amb
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
1000
m
100
10
1
ra
I – Reverse Light Current ( A )
0.1
0.01 0.1 1
94 8404
Ee – Irradiance ( mW/cm2 )
VR=5V
l
=950nm
100
10
40
20
D
C – Diode Capacitance ( pF )
94 8407
0
0.1 1 10
VR – Reverse Voltage ( V )
100
Figure 5. Diode Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
rel
0.2
l
S ( ) – Relative Spectral Sensitivity
94 8408
0
750 850 950 1050
l
– Wavelength ( nm )
1150
Figure 3. Reverse Light Current vs. Irradiance
Document Number 81506
Rev. 2, 20-May-99
Figure 6. Relative Spectral Sensitivity vs. Wavelength
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Page 4
BPV20F
Vishay Telefunken
0°
10°20
°
30°
1.0
0.9
0.8
rel
S – Relative Sensitivity
0.7
0.4 0.2 0 0.2 0.4
0.6
94 8406
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
40°
50°
60°
70°
80°
0.6
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Document Number 81506
Page 5
Dimensions in mm
BPV20F
Vishay Telefunken
Document Number 81506
Rev. 2, 20-May-99
9612202
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Page 6
BPV20F
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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6 (6) Rev. 2, 20-May-99
Document Number 81506
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