Datasheet BPV11F Datasheet (Vishay Telefunken)

Silicon NPN Phototransistor

Description

BPV11F is a very high sensitive silicon NPN
epitaxial planar phototransistor in a standard
T–1¾ plastic package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters (l
The viewing angle of ± 15° makes it insensible to
ambient straylight.
A base terminal is available to enable biasing and
sensitivity control.

y 900nm).

p

BPV11F

Vishay Telefunken

Features

D

Very high radiant sensitivity

D

Standard T–1¾ (ø 5 mm) package

D

IR filter for GaAs emitters (950 nm)

D

Angle of half sensitivity ϕ = ± 15

D

Base terminal available

°

12784

Applications

Detector for industrial electronic circuitry, measurement and control

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Collector Base Voltage V
Collector Emitter Voltage V
Emitter Base Voltage V
Collector Current I
Peak Collector Current
Total Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R

tp/T = 0.5, tp x 10 ms
T

x 47 °C

amb

t x 5 s, 2 mm from body

CBO
CEO
EBO

C

I

CM

P

tot

stg

T

sd

thJA

80 V
70 V

5 V

50 mA
100 mA
150 mW

j

100

–55...+100

260

°

C

°

C

°

C

350 K/W

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Rev. 3, 20-May-99

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BPV11F

Vishay Telefunken

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit

Collector Emitter Breakdown
Voltage

Collector Dark Current VCE = 10 V, E = 0 I
DC Current Gain VCE = 5 V, IC = 5 mA, E = 0 h
Collector Emitter Capacitance VCE = 0 V, f = 1 MHz, E=0 C
Collector Base Capacitance VCB = 0 V, f = 1 MHz, E=0 C
Collector Light Current Ee=1 mW/cm2, l=950 nm,

Angle of Half Sensitivity ϕ ±15 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation

Voltage
Turn–On Time VS=5 V, IC=5 mA,

Turn–Off Time VS=5 V, IC=5 mA,

Cut–Off Frequency VS=5 V, IC=5 mA,

IC = 1 mA V

V

=5 V

CE

Ee=1 mW/cm2, l=950 nm,
IC=1 mA

R

=100

=100

W

W

W

L

R

L

RL=100

(BR)CE

O

CEO

FE
CEO
CBO

I

ca

l

p

l

0.5

V

CEsat

t

on

t

off

f

c

70 V

1 50 nA

450

15 pF
19 pF

3 9 mA

930 nm

900...980 nm
130 300 mV

6

5

110 kHz

m

s

m

s

Typical Characteristics (T

200

160

120

R

thJA

80

40

tot

P – Total Power Dissipation ( mW )

0

020406080

T

94 8300

Figure 1. Total Power Dissipation vs.

– Ambient Temperature ( °C )

amb

Ambient Temperature

= 25_C unless otherwise specified)

amb

4

10

3

10

VCE=10V

40 60 80

T

– Ambient Temperature ( °C )

amb

100

2

10

1

10

CEO

I – Collector Dark Current ( nA )

0

10

20

94 8249

Figure 2. Collector Dark Current vs. Ambient Temperature

100

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Document Number 81505

BPV11F

Vishay Telefunken

2.0

1.8

1.6

VCE=5V

E

=1mW/cm

e

l

=950nm

2

1.4

1.2

1.0

ca rel

0.8

I – Relative Collector Current

0.6
0

20 40 60 80

94 8239

T

– Ambient Temperature ( °C )

amb

Figure 3. Relative Collector Current vs.

Ambient Temperature

100

10

1

VCE=5V

l

0.1

ca

I – Collector Light Current ( mA )

0.01

0.01 0.1 1

94 8244

Ee – Irradiance ( mW/cm2 )

=950nm

100

10

800

600

VCE=5V

400

B – Amplification

200

0

0.01 0.1 1 10

94 8250

IC – Collector Current ( mA )

Figure 6. Amplification vs. Collector Current

20

16

12

8

4

CEO

C – Collector Emitter Capacitance ( pF )

0

0.1 1 10

94 8240

VCE – Collector Emitter Voltage ( V )

f=1MHz

100

100

Figure 4. Collector Light Current vs. Irradiance

100

l

=950nm

10

Ee=1mW/cm

0.5mW/cm

0.2mW/cm

1

0.1mW/cm

0.05mW/cm

ca

I – Collector Light Current ( mA )

0.02mW/cm

2

2

2

2
2

2

0.1

0.1 1 10

94 8245

VCE – Collector Emitter Voltage ( V )

Figure 5. Collector Light Current vs.

Collector Emitter Voltage

Document Number 81505
Rev. 3, 20-May-99

100

Figure 7. Collector Base Capacitance vs.

Collector Base Voltage

20

16

f=1MHz

12

8

4

CEO

C – Collector Emitter Capacitance ( pF )

0

0.1 1 10

94 8247

VCE – Collector Emitter Voltage ( V )

Figure 8. Collector Emitter Capacitance vs.

Collector Emitter Voltage

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100

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BPV11F

Vishay Telefunken

12

m

10

8

6

4

off

2

on

t / t – Turn on / Turn off Time ( s )

0

04 81216

94 8253

IC – Collector Current ( mA )

VCE=5V

R

=100

L

l

=950nm

0°

10°20

°

30°

W

1.0

0.9

t

on

t

off

0.8

rel

S – Relative Sensitivity

0.7

0.4 0.2 0 0.2 0.4

0.6

94 8248

40°

50°

60°
70°

80°

0.6

Figure 9. Turn On/Turn Off Time vs. Collector Current

1.0

0.8

0.6

0.4

rel

0.2

l

S ( ) – Relative Spectral Sensitivity

94 8258

0

800 900 1000

l

– Wavelength ( nm )

1100

Figure 10. Relative Spectral Sensitivity vs. Wavelength

Figure 11. Relative Radiant Sensitivity vs.

Angular Displacement

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Dimensions in mm

BPV11F

Vishay Telefunken

Document Number 81505
Rev. 3, 20-May-99

9612200

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BPV11F

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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