Datasheet BLY89C Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLY89C

VHF power transistor

Product speciﬁcation

August 1986

Philips Semiconductors Product speciﬁcation

VHF power transistor BLY89C

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.

QUICK REFERENCE DATA

R.F. performance up to T

=25°C in an unneutralized common-emitter class-B circuit

h

MODE OF OPERATION V

c.w. 13,5 175 25 >6 >70 1,6 + j1,4 210 + j5,5

PIN CONFIGURATION

alfpage

4

2

Fig.1 Simplified outline and symbol.

CC

V

31

handbook, halfpage

MSB056

f

MHz

MBB012

P

L

W

G dB

p

η

%

z

i

Ω

Y

mS

L

PINNING - SOT120

PIN DESCRIPTION

1 collector 2 emitter 3 base

c

b

e

4 emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product speciﬁcation

VHF power transistor BLY89C

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V Collector-emitter voltage (open base) V Emitter-base voltage (open collector) V Collector current (average) I Collector current (peak value); f > 1 MHz I R.F. power dissipation (f > 1 MHz); T

BE

=0)

CESM CEO

EBO C(AV) CM

=25°CP

mb

rf

max 36 V max 18 V max 4 V max 6 A max 12 A max 73 W

10

handbook, halfpage

I

C

(A)

1

11010

Th = 70 °C

Fig.2 D.C. soar.

T

mb

= 25 °C

VCE (V)

MGP864

2

80

handbook, halfpage

P

rf

(W)

60

40

20

0 100

I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch

ΙΙΙ

derate by

0.38 W/K

ΙΙ

derate by

0.29 W/K

Ι

50

Th (°C)

MGP865

Fig.3 R.F. power dissipation; VCE≤ 16,5 V; f > 1 MHz.

THERMAL RESISTANCE

(dissipation 20 W; T

=79°C, i.e. Th=70°C)

mb

From junction to mounting base (d.c. dissipation) R From junction to mounting base (r.f. dissipation) R From mounting base to heatsink R

August 1986 3

th j-mb(dc) th j-mb(rf) th mb-h

= 3,1 K/W = 2,3 K/W = 0,45 K/W

Philips Semiconductors Product speciﬁcation

VHF power transistor BLY89C

CHARACTERISTICS

T

=25°C

j

Breakdown voltage

Collector-emitter voltage

=0;IC=25mA V

V

BE

(BR)CES

Collector-emitter voltage

open base; I

=50mA V

C

(BR)CEO

Emitter-base voltage

open collector; IE=10mA V

(BR)EBO

Collector cut-off current

= 0; VCE=18V I

V

BE

CES

Transient energy

L = 25 mH; f = 50 Hz open base E > 8ms

−VBE= 1,5 V; RBE=33Ω E > 8ms

D.C. current gain

IC= 2,5 A; VCE=5V h

Collector-emitter saturation voltage

IC= 7,5 A; IB= 1,5 A V

Transition frequency at f = 100 MHz

IC= 2,5 A; VCE= 13,5 V f I

= 7,5 A; VCE= 13,5 V f

C

(1)

FE

(1)

CEsat

(1)

T T

Collector capacitance at f = 1 MHz

I

= 0; VCB=15V C

E=Ie

c

> 36 V

> 18 V

> 4V

< 10 mA

typ 50

10 to 80

typ 1,7 V

typ 800 MHz typ 750 MHz

typ 65 pF < 90 pF

Feedback capacitance at f = 1 MHz

= 100 mA; VCE=15V C

I

C

Collector-stud capacitance

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

August 1986 4

re

C

cs

typ 41 pF typ 2 pF

Philips Semiconductors Product speciﬁcation

VHF power transistor BLY89C

75

handbook, halfpage

h

FE

50

25

0

0 5 10 15

VCE = 13.5 V

5 V

typical values Tj = 25 °C

Fig.4

IC (A)

MGP866

200

handbook, halfpage

C

c

(pF)

100

0

01020

MGP867

IE = Ie = 0 f = 1 MHz

typ

VCB (V)

Fig.5

1000

handbook, full pagewidth

f

T

(MHz)

500

0

0510

typ

Fig.6

IC (A)

MGP868

VCE = 13.5 V f = 100 MHz

Tj = 25 °C

15

August 1986 5

Philips Semiconductors Product speciﬁcation

,,

VHF power transistor BLY89C

APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit)

T

=25°C

h

f (MHz) V

(V) PL(W) PS(W) Gp(dB) IC (A) η (%) zi (Ω) YL(mS)

CC

175 13,5 25 < 6,25 > 6 < 2,64 > 70 1,6 + j1,4 210 + j5,5 175 12,5 25 − typ 6,6 − typ 75 −−

handbook, full pagewidth

C6a

C7

50 Ω

C8

MGP604

50 Ω

C1

C2

C3a

L1

L2

R1

L4

C3b

L3

L5

T.U.T.

L6

C4

+V

CC

C5

L8

L7

C6b

R2

Fig.7 Test circuit for 175 MHz.

List of components:

C1 = 2,5 to 20 pF ﬁlm dielectric trimmer (cat. no. 2222 809 07004) C2 = C8 = 4 to 40 pF ﬁlm dielectric trimmer (cat. no. 2222 809 07008) C3a = C3b = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor C5 = 100 nF polyester capacitor C6a = C6b = 8,2 pF ceramic capacitor (500 V) C7 = 5 to 60 pF ﬁlm dielectric trimmer (cat. no. 2222 809 07011) L1 = 1 turn enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 × 5 mm L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm L3 = L8 = Ferroxcube choke coil (cat. no. 4312 020 36640) L4 = L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor L6 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2 × 5 mm L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2 × 5 mm L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16". R1 = 10 Ω (±10%) carbon resistor R2 = 4,7 Ω (±5%) carbon resistor

August 1986 6

Philips Semiconductors Product speciﬁcation

VHF power transistor BLY89C

150

handbook, full pagewidth

72

L8

C5

C6a

L7

C6b

C7

R2

+V

CC

C8

MGP808

C1 C2

L3

R1

C3a

L2

L1

L4

C3b

C4

L6

L5

rivet

Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.

The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.

August 1986 7

Philips Semiconductors Product speciﬁcation

VHF power transistor BLY89C

50

handbook, halfpage

P

L

(W)

25

0

0 5 10 15

40

handbook, halfpage

P

Lnom

(W)

VSWR = 1

30

20

10

f = 175 MHz typical values

Th = 25 °C

Th = 70 °C

Fig.9

MGP869

VCC = 13.5 V

VCC = 12.5 V

PS (W)

MGP871

VSWR = 10

50

15

handbook, halfpage

G

p

(dB)

10

5

0

f = 175 MHz Th = 25 °C

typical values

G

p

η

20

MGP870

VCC = 13.5 V VCC = 12.5 V

PL (W)

150

η

(%)

100

50

0

40

Fig.10

Conditions for R.F. SOAR

f = 175 MHz Th=70°C R V PS=P

th mb-h

CCnom

= 0,45 K/W = 13,5 V

at V

Snom

= 13,5 V and VSWR = 1

CCnom

The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter.

P

S

P

0

1 1.1 1.2 1.3

Snom V

V

CCnom

CC

Fig.11 R.F. soar.

August 1986 8

The graph applies to the situation in which the drive (P

S/PSnom

) increases linearly with supply over-voltage

ratio.

Philips Semiconductors Product speciﬁcation

VHF power transistor BLY89C

OPERATING NOTE

Below 50 MHz a base-emitter resistor of 10 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only.

20

handbook, halfpage

G

p

(dB)

15

10

5

0

0 100 300

VCC= 13,5V

=25W

P

L

=25°C

T

h

typical values

MGP872

power gain versus frequency

(class-B operation)

200

f (MHz)

Fig.12

handbook, halfpage

5

input impedance (series components) versus frequency (class-B operation)

ri, x

i

(Ω)

0

−5 0 100 300

VCC= 13,5 V

=25W

P

L

=25°C

T

h

typical values

MGP873

r

i

x

i

200

x

r

i

f (MHz)

Fig.13

10

handbook, halfpage

VCC= 13,5 V P T typical values

load impedance (parallel components)

R

versus frequency (class-B operation)

L

(Ω)

7.5

5

2.5

0

0 100 300

=25W

L

=25°C

h

R

L

C

L

R

L

C

L

200

Fig.14

f (MHz)

MGP874

500

C

(pF)

250

0

−250

−500

L

August 1986 9

Philips Semiconductors Product speciﬁcation

VHF power transistor BLY89C

PACKAGE OUTLINE

Studded ceramic package; 4 leads SOT120A

D

A

Q

c

D

N

1

N

3

L

H

1

D

2

H b

4

A

w

A

M

1

X

3

2

M

1

detail X

W

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.90

5.48

c

Db

9.73

0.18

9.47

0.14

0.383

0.007

0.373

0.004

IEC JEDEC EIAJ

D

1

8.39

8.12

0.330

0.320

D

2

9.66

9.39

0.380

0.370

27.44

25.78

1.080

0.354

1.015

0.315

REFERENCES

L

9.00

8.00

MH

3.41

2.92

0.134

0.115

0.065

0.055

UNIT

mm

inches

A W

5.97

4.74

0.232

0.283

0.216

0.248

OUTLINE VERSION

SOT120A

August 1986 10

M

1.66

1.39

8-32

UNC

w

0.38

0.015

1

ISSUE DATE

97-06-28

N

1

12.83

11.17

0.505

0.440

1

1.60

0.00

0.063

0.000

N

3

3.31

2.54

0.130

0.100

Q

4.35

3.98

0.171

0.157

EUROPEAN

PROJECTION

Philips Semiconductors Product speciﬁcation

VHF power transistor BLY89C

DEFINITIONS

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

August 1986 11