Datasheet BLY87C Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLY87C

VHF power transistor

Product specification
File under Discrete Semiconductors, SC08a

August 1986

Philips Semiconductors Product specification

VHF power transistor BLY87C

DESCRIPTION

N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage 16,5 V.

QUICK REFERENCE DATA

R.F. performance up to T

MODE OF OPERATION V

= 25 °C in an unneutralized common-emitter class-B circuit

h

CE

V

c.w. 13,5 175 8 > 12,0 > 60 2,2 + j0,4 96 − j28

c.w. 12,5 175 8 typ. 11,5 typ. 65 −−

PIN CONFIGURATION

alfpage

4

31

handbook, halfpage

It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.

f

MHz

P

W

L

G

p

dB

c

b

η

%

z

i

Ω

PINNING - SOT120

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

Y

mS

L

MBB012

2

MSB056

e

Fig.1 Simplified outline and symbol.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

VHF power transistor BLY87C

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T

BE

= 0)

CESM
CEO

EBO
C(AV)
CM

=25°CP

mb

rf

stg

j

max. 36 V
max. 18 V
max. 4 V
max. 1,5 A
max. 4,0 A
max. 20 W

−65 to + 150 °C
max. 200 °C

handbook, halfpage

2

I

C

(A)

1.5

1

0.5
510 20

Tmb = 25 °CTh = 70 °C

15

Fig.2 D.C. SOAR.

VCE (V)

MGP820

30

handbook, halfpage

P

rf

(W)

20

10

0

0 100

I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch

ΙΙΙ

derate by 0.12 W/K

ΙΙ

Ι

0.1 W/K

50

Th (°C)

Fig.3 R.F. power dissipation; VCE≤ 16,5 V;

f > 1 MHz.

MGP821

THERMAL RESISTANCE

(dissipation = 8 W; T

= 73,5 °C, i.e. Th= 70 °C)

mb

From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R

August 1986 3

th j-mb(dc)
th j-mb(rf)
th mb-h

= 10,7 K/W
= 8,6 K/W
= 0,45 K/W

Philips Semiconductors Product specification

VHF power transistor BLY87C

CHARACTERISTICS

T

=25°C

j

Collector-emitter breakdown voltage

V

= 0; IC= 5 mA V

BE

Collector-emitter breakdown voltage

open base; IC= 25 mA V

Emitter-base breakdown voltage

open collector; IE= 1 mA V

Collector cut-off current

VBE= 0; VCE= 18 V I

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E
R

=10Ω E

BE

D.C. current gain

(1)

IC= 0,75 A; VCE=5 V h

(BR) CES

(BR)CEO

(BR)EBO

CES

SBO
SBR

FE

> 36 V

> 18 V

> 4V

< 2mA

> 0,5 mJ
> 0,5 mJ

typ. 40

10 to 100

Collector-emitter saturation voltage

(1)

IC= 2 A; IB= 0,4 A V

Transition frequency at f = 100 MHz

(1)

−IE= 0,75 A; VCB= 13,5 V f

−I

= 2 A; VCB= 13,5 V f

E

Collector capacitance at f = 1 MHz

IE=Ie=0;VCB= 13,5 V C

Feedback capacitance at f = 1 MHz

IC= 100 mA; VCE= 13,5 V C

Collector-stud capacitance C

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

CEsat

T
T

c

re
cs

typ. 0,85 V

typ. 950 MHz
typ. 850 MHz

typ. 16,5 pF

typ. 12 pF
typ. 2 pF

August 1986 4

Philips Semiconductors Product specification

VHF power transistor BLY87C

75

handbook, halfpage

h

FE

50

25

0

0 1 3

VCE = 13.5 V

5 V

2

IC (A)

Fig.4 Typical values; Tj=25°C.

MGP822

30

handbook, halfpage

C

c

(pF)

20

10

0

05 15

Fig.5 IE=Ie= 0; f = 1 MHz; Tj= 25 °C.

typ

MGP823

10

VCB (V)

1000

handbook, full pagewidth

f

T

(MHz)

500

0

0

VCB = 13.5 V

10 V

21

Fig.6 Typical values; f = 100 MHz; Tj= 25 °C.

−IE (A)

MGP824

3

August 1986 5

Philips Semiconductors Product specification

VHF power transistor BLY87C

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit) T

= 25 °C

h

f (MHz) V

(V) PL(W) PS(W) Gp(dB) IC(A) η (%) zi(Ω) YL(mS)

CE

175 13,5 8 < 0,5 > 12,0 < 0,99 > 60 2,2 + j0,4 96 − j28

175 12,5 8 − typ. 11,5 − typ. 65 −−

handbook, full pagewidth

50 Ω

C1

C2

L4

T.U.T.

L1

L3

L2

C3

C4

L5

L6

+V

CC

C5

C6

L7

R1

MGP253

50 Ω

C7

Fig.7 Test circuit; c.w. class-B.

List of components:

C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C6 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3 = 47 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor (500 V)
C5 = 100 nF polyester capacitor
C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
L1 = 2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 5,7 mm; leads 2 × 5 mm
L2 = L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = L4 = strip (12 mm × 6 mm); tap for C3 at 5 mm from transistor
L5 = 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 7,5 mm; leads 2 × 5 mm
L7 = 3 turns Cu wire (1,6 mm); int. dia. 6,5 mm; length 7,4 mm; leads 2 × 5 mm
L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 = 10 Ω carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.

August 1986 6

Philips Semiconductors Product specification

VHF power transistor BLY87C

150

handbook, full pagewidth

72

1888MJK

C1 C2

L6

C4

C5

L5

L1

L3

L2

C3

L4

L7

C6

R1

+V

CC

C7

1888MJK

rivet

MGP825

Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.

The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.

August 1986 7

Philips Semiconductors Product specification

VHF power transistor BLY87C

15

handbook, halfpage

P

L

(W)

10

5

0

0 0.5 1.5

Th = 25 °C

Th = 70 °C

Fig.9 Typical values; f = 175 MHz;

 VCE= 13,5 V; − − − VCE= 12,5 V.

10

handbook, halfpage

P

Lnom
(W)

VSWR = 1

9

1

VSWR =

6

PS (W)

MGP826

MGP828

MGP827

30

handbook, halfpage

G

p

(dB)

20

10

0

2.5 12.5

Th = 25 °C

70 °C

Th = 25 °C

70 °C

6.54.5 8.5 10.5

G

η

p

80

η

(%)

60

40

20

PL (W)

Fig.10 Typical values; f = 175 MHz;

 VCE= 13,5 V; − − − VCE= 12,5 V.

Note to Fig.11:
The transistor has been developed for use with

unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.

1.2

10

20

P

50

S

P

Snom

V

CE

V

CEnom

8

7

1 1.1 1.3

Fig.11 R.F. SOAR (short-time operation during

mismatch); f = 175 MHz; Th=70°C;
R
V
V

= 0,45 K/W;

th mb-h

= 13,5 V or 12,5 V; PS=P

CEnom

and VSWR = 1.

CEnom

Snom

at

August 1986 8

The graph applies to the situation in which the drive
(PS/P

) increases linearly with supply over-voltage

Snom

ratio.

Philips Semiconductors Product specification

VHF power transistor BLY87C

10

handbook, halfpage

ri, x

i

(Ω)

5

r

i

0

x

i

−5
0 400

Typical values; VCE= 13,5 V;

= 8 W;Th=25°C.

P

L

200

f (MHz)

Fig.12 Input impedance (series components).

x

i

r

i

MGP829

15

handbook, halfpage

R

L

(Ω)

R

L

10

C

L

5

0

0 400

Typical values; VCE= 13,5 V;

= 8 W; Th=25°C.

P

L

200

C

L

R

L

f (MHz)

Fig.13 Load impedance (parallel components).

OPERATING NOTE

MGP830

0

C

(pF)

−50

−100

−150

L

20

handbook, halfpage

G

p

(dB)

15

10

0

0 400

Typical values; VCE= 13,5 V;

= 8 W; Th=25°C.

P

L

200

Fig.14

f (MHz)

MGP831

Below 100 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.

August 1986 9

Philips Semiconductors Product specification

VHF power transistor BLY87C

PACKAGE OUTLINE

Studded ceramic package; 4 leads SOT120A

D

A

Q

c

D

N

1

N

N

3

L

H

1

1

D

2

H
b

4

A

w

A

M

1

X

3

2

M

M

1

detail X

W

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.90

5.48

c

Db

9.73

0.18

9.47

0.14

0.383

0.007

0.373

0.004

IEC JEDEC EIAJ

D

1

8.39

8.12

0.330

0.320

D

2

9.66

9.39

0.380

0.370

27.44

25.78

1.080

0.354

1.015

0.315

REFERENCES

L

9.00

8.00

MH

3.41

2.92

0.134

0.115

0.065

0.055

UNIT

mm

inches

A W

5.97

4.74

0.232

0.283

0.216

0.248

OUTLINE
VERSION

SOT120A

August 1986 10

M

1.66

1.39

8-32

UNC

w

1

0.38

0.015

ISSUE DATE

97-06-28

N

N

1

12.83

11.17

0.505

0.440

1.60

0.00

0.063

0.000

N

3

3.31

2.54

Q

4.35

3.98

0.171

0.157

EUROPEAN

PROJECTION

1

0.130

0.100

Philips Semiconductors Product specification

VHF power transistor BLY87C

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

August 1986 11