Datasheet BLX94C Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLX94C

UHF power transistor

Product specification

1996 Feb 06

Philips Semiconductors Product specification

UHF power transistor BLX94C

FEATURES

• Withstands full load mismatch

• Emitter ballasting resistors for an optimum temperature

profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Transmitting applications in the UHF range with a
nominal supply voltage up to 28 V.

PINNING - SOT122A

PIN SYMBOL DESCRIPTION

1 c collector
2 e emitter
3 b base
4 e emitter

QUICK REFERENCE DATA

RF performance at T

=25°C in a common emitter test circuit.

h

DESCRIPTION

NPN silicon planar epitaxial transistor primarily intended
for class-A, B or C operation. The transistor is
encapsulated in a 4-lead SOT122A stud envelope with a
ceramic cap.

handbook, halfpage

4

c

31

b

2

MAM229

e

Fig.1 Simplified outline and symbol.

MODE OF

OPERATION

f

(MHz)

V

(V)

CE

P

(W)

L

G

p

(dB)

η

(%)

C

CW, class-B 470 28 25 >6.5 >55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1996 Feb 06 2

Philips Semiconductors Product specification

UHF power transistor BLX94C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

V

EBO

I

C

I

C(AV)

I

CM

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

collector-emitter voltage (peak value) VBE=0 − 65 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 4V
collector current (DC) − 2.5 A
average collector current − 2.5 A
peak collector current f > 1 MHz − 6A
total power dissipation ≤ Tmb=25°C − 60 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

thermal resistance from junction to

P

=20W;Tmb=82°C; Th=70°C 4 K/W

tot

mounting base (DC dissipation)

R

th j-mb

thermal resistance from junction to

P

=20W;Tmb=82°C; Th=70°C 2.7 K/W

tot

mounting base (RF dissipation)

R

th mb-h

thermal resistance from mounting base

P

=20W;Tmb=82°C; Th=70°C 0.6 K/W

tot

to heatsink

10

handbook, halfpage

I

C

(A)

1

−1

10

11010

(1)(2)

VCE (V)

MBH096

2

60

handbook, halfpage

P

tot

(W)

50

40

30

20

10

0 100

(3)

(2)

(1)

50 Th (

MBH097

o

C)

(1) Tmb=25°C.
(2) Th=70°C.

Fig.2 DC SOAR.

1996 Feb 06 3

(1) Continuous DC operation.
(2) Continuous RF operation.
(3) Short-time operation during mismatch.

Fig.3 Power derating curves.

Philips Semiconductors Product specification

UHF power transistor BLX94C

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CES

V

(BR)CEO

V

(BR)EBO

V

CEsat

I

CES

E

SBR

h

FE

f

T

C

c

C

re

C

c-s

collector-emitter breakdown voltage VBE= 0; IC=25mA 65 −−V
collector-emitter breakdown voltage open base; IC= 100 mA 30 −−V
emitter-base breakdown voltage open collector; IE=10mA 4 −−V
collector-emitter saturation voltage IC= 4 A; IB= 0.8 A; note 1 − 1.5 − V
collector cut-off current VBE= 0; VCE=30V −−10 mA
second breakdown energy open base; L = 25 mH; f = 50 Hz 3 −−mJ

=10Ω; L = 25 mH; f = 50 Hz 3 −−mJ

R

BE

DC current gain VCE=5V; IC= 1.5 A; note 1 15 50 −
transition frequency VCB= 28 V; IE= −1.5 A;

− 1.1 − f

T

f = 500 MHz; note 1
VCB= 28 V; IE= −4A;

− 0.75 − f

T

f = 500 MHz; note 1
collector capacitance VCB= 28 V; IE=ie= 0; f = 1 MHz − 33 − pF
feedback capacitance VCE= 28 V; IC= 20 mA; f = 1 MHz; − 18 − pF
collector-stud capacitance − 1.2 − pF

Note

1. Measured under pulsed conditions: t

100

handbook, halfpage

h

FE

50

0

04

Measured under pulsed conditions; tp≤ 200 µs; δ≤0.02;Tj=25°C.
(1) VCE=25V.
(2) VCE=5V.

2I

≤ 200 µs; δ≤0.02.

p

MBH099

VCE = 25 V

5 V

(A)

C

75

handbook, halfpage

C

c

(pF)

50

25

0

040

IE=ie= 0; f = 1 MHz; Tj=25°C.

MBH098

20 VCB (V)

Fig.4 DC current gain as a function of collector

current; typical values.

1996 Feb 06 4

Fig.5 Collector capacitance as a function of

collector-base voltage; typical values.

Philips Semiconductors Product specification

UHF power transistor BLX94C

1,5

handbook, full pagewidth

f

T

(GHz)

1

0.5

0

0

VCB= 28 V; Tj=25°.

−1 −2

−3I

E

Fig.6 Transmission frequency as a function of emitter current; typical values.

(A)

MBH106

−4

1996 Feb 06 5

Philips Semiconductors Product specification

UHF power transistor BLX94C

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter, class-B test circuit.

h

MODE OF OPERATION

CW, class-B 470 28 25 <5.6

10

handbook, halfpage

G

p

(dB)

5

0

040

VCE=28V.
ICQ= 200 mA.
f = 470 MHz.

f

(MHz)

G

p

η

20 PL (W)

MBH101

V

(V)

CE

100

(%)

50

0

P

L

(W)

handbook, halfpage

η

P

S

(W)

typ. 4.7

40

P

L

(W)

30

20

10

0

024 8

VCE=28V.
Th=25°C.
f = 470 MHz.

G

p

(dB)

>6.5

typ. 7.25

I

C

(A)

<1.62

typ. 1.54

6

MBH100

PS (W)

η

C

(%)

>55

typ. 58

Fig.7 Power gain and efficiency as functions of

load power; typical values.

1996 Feb 06 6

Fig.8 Load power as a function of source power;

typical values.

Philips Semiconductors Product specification

UHF power transistor BLX94C

handbook, full pagewidth

input

ZS = 50 Ω

C2

C1

L1

T.U.T.

+V

L3

C5

R2

L5

CC

R1

C4C3

L2

C7

L4

C8

C6

output

ZL = 50 Ω

MBH107

Fig.9 Class-B test circuit at f = 470 MHz.

List of components (see Figs 9 and 10)

COMPONENT DESCRIPTION VALUE DIMENSIONS

CATALOGUE

No.

C1, C2, C8 film dielectric trimmer capacitor 2 to 9 pF 2222 809 09002
C3, C4 chip capacitor 15 pF
C5 feed through capacitor 100 pF
C6 polyester capacitor 33 nF
C6 chip capacitor 22 nF, 63 V
C7 film dielectric trimmer capacitor 2 to 18 pF 2222 809 09003
L1 stripline; note 1 length 41.1 mm

width 5 mm

L2 13 turns enamelled 0.5 mm copper

wire

int. diameter 4 mm
close wound

L3 2 turns 1 mm copper wire int. diameter 4 mm

winding pitch 1.5 mm
leads 2 x 5 mm

L4 stripline; note 1 length 52.7 mm

width 5 mm
L5 Ferroxcube choke coil 750 Ω; ± 20% 4312 020 36640
R1 carbon resistor 1 Ω
R2 carbon resistor 10 Ω

Note

1. The striplines are on double-clad PCB with PTFE fibre-glass dielectric (ε

1996 Feb 06 7

= 2.74); thickness 1.45 mm.

r

Philips Semiconductors Product specification

UHF power transistor BLX94C

handbook, full pagewidth

input
50 Ω

C1

C2

146

52.741.1

rivet (4x)

47

L2

R1

L1

C4

C3

C7

L4

L3

C5

C6

R2

L5

C8

V

CC

output

50 Ω

MBH108

Dimensions in mm.
The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

Fig.10 Component layout and printed-circuit board for 470 MHz class-B test circuit.

1996 Feb 06 8

Philips Semiconductors Product specification

UHF power transistor BLX94C

30

handbook, halfpage

P

L

(W)

20

10

1 10 VSWR

VCE= 28 V; f = 470 MHz; R

th mb-h

= 0.6 K/W.

Fig.11 Load power as a function of VSWR.

Th = 50

MBH102

o

C

o

70

o

90

handbook, halfpage

C
C

2

10

3

ri, x

i

(Ω)

2

1

r

i

0

−1

−2

100 500

VCE= 28 V; PL=25W;

=25°C; Class-B operation.

T

h

300 f (MHz)

MBH103

x

i

Fig.12 Input impedance as a function of frequency

(series components); typical values.

8

handbook, halfpage

RL, X

L

(Ω)

X

L

6

R

L

4

100 500

VCE= 28 V; PL=25W;

=25°C; Class-B operation.

T

h

300 f (MHz)

MBH104

Fig.13 Load impedance as a function of frequency

(series components); typical values.

24

handbook, halfpage

G

p

(dB)

20

16

12

8

4

0

100 500

VCE= 28 V; PL=25W;

=25°C; Class-B operation.

T

h

300 f (MHz)

Fig.14 Power gain as a function of frequency;

typical values.

MBH105

1996 Feb 06 9

Philips Semiconductors Product specification

UHF power transistor BLX94C

PACKAGE OUTLINE

5.9

4

5.5

7.6 max

27.6

24.9

handbook, full pagewidth

27.6

24.9

3.0

Dimensions in mm.
Torque on nut: min. 0.75 Nm; max. 0.85 Nm.
Mounting hole to have no burrs at either end.
De-burring must leave surface flat; do not chamfer or countersink either end of hole.
When locking is required an adhesive is preferred instead of a lock washer.

2

(4x)

8.8

min

5

(4x)

31

8.5

MSA246

1.52

6.35

3.3

8-32 UNC

1.6

max

12.0

11.0

3.25

2.80

5.6 max

0.14

metal
BeO

ceramic

Fig.15 SOT122A.

1996 Feb 06 10

Philips Semiconductors Product specification

UHF power transistor BLX94C

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Feb 06 11