Datasheet BLW98 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLW98

UHF linear power transistor

Product specification

August 1986

Philips Semiconductors Product specification

UHF linear power transistor BLW98

DESCRIPTION

N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers of TV
transposers and transmitters in band

FEATURES:

• diffused emitter ballasting resistors
for an optimum temperature profile;

• gold sandwich metallization
ensures excellent reliability.

IV-V, as well as for driver stages in
tube systems.

The transistor has a1⁄4" capstan
envelope with ceramic cap. All leads
are isolated from the stud.

QUICK REFERENCE DATA

R.F. performance in linear amplifier

MODE OF OPERATION f

vision

MHz

V

CE

V

I

C

mA

T
°C

h

(1)

d

im

P

dB

o sync

W

(1)

G
dB

p

class-A 860 25 850 70 −60 > 3,5 > 6,5
class-A 860 25 850 25 −60 typ. 4,4 typ. 7,0

Note

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal−16 dB), zero dB corresponds to
peak sync level.

PIN CONFIGURATION

PINNING - SOT122A.

PIN DESCRIPTION

1 collector
2 emitter

Top view

4

31

2

MBK187

3 base
4 emitter

handbook, halfpage

Fig.1 Simplified outline. SOT122A.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

UHF linear power transistor BLW98

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage

(peak value); V

open base V
Emitter-base voltage (open collector) V
Collector current

d.c. I

(peak value); f > 1 MHz I
Total power dissipation at T
Storage temperature T
Operating junction temperature T

=0 V

BE

=70°CP

h

CESM
CEO
EBO

C
CM

tot
stg
j

max. 50 V
max. 27 V
max. 3,5 V

max. 2 A
max. 4 A
max. 21,5 W

−65 to +150 °C

max. 200 °C

10

handbook, halfpage

I

C

(A)

(1)

T

= 70 °C Tmb = 25 °C

1

−1

10

11010

(1) Second breakdown limit (independent of temperature).

h

VCE (V)

Fig.2 D.C. SOAR.

MGP717

2

40

handbook, halfpage

P

tot

(W)

30

20

10

0

Fig.3 Power derating curve vs. temperature.

THERMAL RESISTANCE

(dissipation = 21,25 W; T

= 82,75 °C, Th=70°C)

mb

From junction to mounting base R
From mounting base to heatsink R

th j-mb
th mb-h

MGP718

50 100

Th (°C)

= 5,45 K/W
= 0,6 K/W

August 1986 3

Philips Semiconductors Product specification

UHF linear power transistor BLW98

6.5

handbook, full pagewidth

R

th j-h

(K/W)

6

5.5

5

4.5

4

515 35

Th = 120 °C

100 °C

75 °C

80 °C

100 °C

60 °C 40 °C 20 °C

Tj = 200 °C

175 °C

150 °C

125 °C

25

0 °C

P

tot

MGP719

(W)

Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink

and junction temperature as parameters. (R

th mb-h

= 0,6 K/W.)

45

Example

Nominal class-A operation (without r.f. signal): V

Fig.4 shows: R

Typical device: R

T

T

th j-h

j

th j-h

j

max. 6,05 K/W
max. 200 °C
typ. 5,35 K/W
typ. 183 °C

= 25 V; IC= 850 mA; Th=70°C.

CE

August 1986 4

Philips Semiconductors Product specification

UHF linear power transistor BLW98

CHARACTERISTICS

T

=25°C unless otherwise specified

j

Collector-emitter breakdown voltage

V

= 0; IC= 10 mA V

BE

open base, I

= 25 mA V

C

Emitter-base breakdown voltage

open collector, I
D.C. current gain

= 5 mA V

E

(1)

IC= 850 mA; VCE= 25 V h

(BR)CES
(BR)CEO

(BR)EBO

FE

> 50 V
> 27 V

> 3,5 V

>

typ.1540

Collector-emitter saturation voltage

(1)

IC= 500 mA; IB= 100 mA V
Transition frequency at f = 500 MHz

(2)

−IE= 850 mA; VCB= 25 V f

Collector capacitance at f = 1 MHz

IE=Ie= 0; VCB= 25 V C

Feedback capacitance at f = 1 MHz

I

= 50 mA; VCE= 25 V C

C

Collector-stud capacitance C

Notes

1. Measured under pulse conditions: t

≤ 300 µs; δ≤0,02.

p

2. Measured under pulse conditions: tp≤ 50 µs; δ≤0,01.

10

handbook, halfpage

I

C

(A)

Th = 70 °C

MGP720

25 °C

CEsat

T

c

re
cs

typ. 0,25 V

typ. 2,5 GHz

typ.<2430pF

pF

typ. 15 pF
typ. 1,2 pF

1

−1

10

−2

10

VBE (V)

20.5 1 1.5

Fig.5 Typical values; VCE= 25 V.

August 1986 5

Philips Semiconductors Product specification

UHF linear power transistor BLW98

60

handbook, halfpage

h

FE

40

20

0

0

VCE = 25 V

5 V

12

IC (A)

Fig.6 Typical values; Tj=25°C.

MGP721

100

handbook, halfpage

C

c

(pF)

75

50

25

0

010

Fig.7 IE=Ie= 0; f = 1 MHz; Tj=25°C.

typ

MGP722

20 30

VCB (V)

4

handbook, full pagewidth

f

T

(GHz)

3

2

1

0

01

typ

2

Fig.8 VCB= 25 V; f = 500 MHz; Tj=25°C.

−IE (A)

MGP723

3

August 1986 6

Philips Semiconductors Product specification

UHF linear power transistor BLW98

APPLICATION INFORMATION

R.F. performance in u.h.f. class-A operation (linear power amplifier)

f

(MHz) VCE(V) IC(mA) Th(°C) dim(dB)

vision

(1)

P

o sync

860 25 850 70 −60 > 3,5 > 6,5
860 25 850 70 −60 typ. 3,8 typ. 7,0
860 25 850 25 −60 typ. 4,4 typ. 7,0

Note

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.

(W)

(1)

GP (dB)

handbook, full pagewidth

50 Ω

C12

C3

T.U.T.

L2 L3

C5 C6

BD136

C1

C4

R6

L1

C2

R2

BY206

R1

R7

Fig.9 Class-A test circuit at f

R3

R4

R5

vision

L4

C10 C11

= 860 MHz.

C8

C7

MGP724

VSWR output <VSWR input < 1.1

50 Ω

C9

+V

S

August 1986 7

Philips Semiconductors Product specification

UHF linear power transistor BLW98

List of components:

C1 = C2 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C3 = C4 = 100 nF polyester capacitor
C5 = C6 = 1 nF feed-through capacitor
C7 = 5,6 pF ceramic capacitor
C8 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 09003)
C9 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002)
C10 = 10 µF/40 V solid aluminium electrolytic capacitor
C11 = 470 nF polyester capacitor
C12 = 2 × 3,3 pF chip capacitors (in parallel)
R1 = 150 Ω carbon resistor (0,25 W) R5 = 4 × 12 Ω carbon resistors in parallel (1 W each)
R2 = 1,8 kΩ carbon resistor (0,5 W) R6= 1 kΩ carbon resistor (0,25 W)
R3 = 33 Ω carbon resistor (0,5 W) R7 = 220 Ω carbon potentiometer (0,25 W)
R4 = 220 Ω carbon resistor (1 W)
L1 = stripline (13,6 mm × 6,9 mm)
L2 = microchoke 0,47 µH (cat. no. 4322 057 04770)
L3 = 1 turn Cu wire (1 mm); internal diameter 5,5 mm; leads 2 × 5 mm
L4 = stripline (40,8 mm × 6,9 mm)
L1 and L4 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (ε

thickness 1,5 mm.

= 2,74);

r

August 1986 8

Philips Semiconductors Product specification

UHF linear power transistor BLW98

96 mm

handbook, full pagewidth

rivet

47 mm

C1

C2

Note

Hole in printed-circuit board: Ø 9,7 mm.

V

C3

BB

L3

C12

C5

L2

L1

C6

+V

CC

C11

C8

L4

C9

band V

MGP725

Fig.10 Component layout and printed circuit board for 860 MHz class-A test circuit.

The circuit and the components are on one side of the PTFE fibre-glass board, the other side is unetched copper to serve
as a ground-plane. Earth connections are made by hollow rivets. Additionally copper straps are used under the emitters
and at the input and output to provide direct contact between the copper on the component side and the ground-plane.

August 1986 9

Philips Semiconductors Product specification

UHF linear power transistor BLW98

−50

handbook, full pagewidth

d

im

(dB)

−55

−60

−65

02 8

Fig.11 Intermodulation distortion (dim)

Typical values; VCE= 25 V; IC= 850 mA;− − −Th=25°C;Th=70°C; f

d

im

d

cm

46

(1.)

and cross-modulation distortion (dcm)

P

o sync

(2.)

as a function of P

= 860 MHz.

vision

(W)

MGP726

o sync

15

d

cm

(%)

10

5

0

10

.

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
Intermodulation distortion of input signal ≤−75 dB.

2. Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to −20 dB.

August 1986 10

Philips Semiconductors Product specification

UHF linear power transistor BLW98

handbook, halfpage

5

ri, x

i

(Ω)

4

x

3

2

1

0

400 650 900

Typical values; VCE= 25 V; IC= 850 mA;
class-A operation; T

=70°C.

h

i

r

i

f (MHz)

Fig.12 Input impedance (series components).

MGP727

10

handbook, halfpage

RL, X

L

(Ω)

R

=70°C.

h

L

X

L

f (MHz)

8

6

4

400 650 900

Typical values; VCE= 25 V; IC= 850 mA;
class-A operation; T

Fig.13 Load impedance (series components).

MGP728

12

handbook, halfpage

G

p

(dB)

8

4

0

400 650 900

Typical values; VCE= 25 V; IC= 850 mA;
class-A operation; T

=70°C.

h

Fig.14

MGP729

f (MHz)

August 1986 11

Philips Semiconductors Product specification

UHF linear power transistor BLW98

PACKAGE OUTLINE

Studded ceramic package; 4 leads SOT122A

D

A

Q

N

1

N

N

3

L

H

D

1

D

2

H
b

4

ceramic
BeO

metal

A

w

X

c

A

M

1

M

M

1

detail X

W

α

3

1

2

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

OUTLINE
VERSION

SOT122A

A

5.97

4.74

b

5.85

5.58

D

6.48

6.22

D

1

2

27.56

7.24

25.78

6.93

REFERENCES

cM

D

0.18

7.50

0.14

7.23

IEC JEDEC EIAJ

L

H

9.91

3.18

9.14

2.66

August 1986 12

N

M

1

1.66

1.39

NN

11.82

11.04

1

max.

1.02

Q

3

3.38

3.86

2.74

2.92

EUROPEAN

PROJECTION

W

8-32

UNC

ISSUE DATE

w

1

0.381

97-04-18

α

90°

Philips Semiconductors Product specification

UHF linear power transistor BLW98

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

August 1986 13