Datasheet BLW97 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLW97

HF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

HF power transistor BLW97

DESCRIPTION

N-P-N silicon planar epitaxial
transistor designed for use in class-A,
AB and B operated high-power
industrial and military transmitting
equipment in the h.f. band.

The transistor offers excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is made to withstand

QUICK REFERENCE DATA

R.F. performance up to T

MODE OF OPERATION V

= 25 °C

h

CE

V

s.s.b.
(class-AB)

28 0,1 1,6−28 175 (PEP) > 11,5 > 40 <−30 < −30

PIN CONFIGURATION

handbook, halfpage

43

severe load-mismatch conditions. All
leads are isolated from the flange.

The transistors are supplied in
matched h

I

C(ZS)

A

groups.

FE

MHz

f

P

L

W

G
dB

p

η

dt

%

d

dB

PINNING - SOT121B.

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

3

d

5

dB

21

MLA876

Fig.1 Simplified outline. SOT121B.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

HF power transistor BLW97

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (peak value)

V

= 0 V

BE

open base V

Emitter-base voltage (open collector) V

CESM
CEO
EBO

Collector current

average I
peak value; f > 1 MHz I

Total d.c. power dissipation at T

=25°CP

h

C(AV)
CM

tot(d.c.)

R.F. power dissipation

f > 1 MHz; Th= 25°CP
Storage temperature T
Operating junction temperature T

tot(rf)
stg
j

max. 65 V
max. 33 V
max. 4 V

max. 15 A
max. 50 A
max. 190 W

max. 230 W

−65 to + 150 °C

max. 200 °C

2

10

handbook, halfpage

I

C

(A)

10

1

11010

Th = 70 °C Tmb = 25 °C

VCE (V)

Fig.2 D.C. SOAR.

MGP703

2

350

handbook, halfpage

P

tot

(W)

250

150

50

I Continuous d.c. operation
II Continuous r.f. operation (f > 1 Mhz).
III Short-time operation during mismatch; (f > 1 MHz).

Fig.3 Power/temperature derating curves.

THERMAL RESISTANCE

(dissipation = 120 W; T

=25°C i.e. Tmb=49°C)

h

From junction to mounting base

(d.c. dissipation) R
From junction to mounting base

(r.f. dissipation) R
From mounting base to heatsink R

MGP704

ΙΙΙ

ΙΙ

Ι

0 40 120

th j-mb(dc)

th j-mb(rf)
th mb-h

= 0,63 K/W

= 0,48 K/W
= 0,20 K/W

80

Th (°C)

August 1986 3

Philips Semiconductors Product specification

HF power transistor BLW97

CHARACTERISTICS

T

=25°C unless otherwise specified

j

Collector-emitter breakdown voltage

V

= 0; IC= 50 mA V

BE

= 100 mA; open base V

I

C

Emitter-base breakdown voltage

I

= 20 mA; open collector V

E

Collector cut-off current

VCE= 33 V; VBE=0 I
Second breakdown energy; L = 25 mH; f = 50 Hz

open base E

R

=10Ω E

BE

D.C. current gain

I

= 10 A; VCE=5 V h

C

D.C. current gain ratio of matched devices

(1)

(1)

IC= 10 A; VCE=5 V h
Collector-emitter saturation voltage

(1)

IC= 25 A; IB=5 A V
Transition frequency at f = 100 MHz

(2)

−IE= 10 A; VCB= 28 V f

−I

= 20 A; VCB= 28 V f

E

Collector capacitance at f = 1 MHz

IE=ie=0;VCB= 28 V C
Feedback capacitance at f = 1 MHz

IC= 0; VCE= 28 V C
Collector-flange capacitance C

(BR)CES
(BR)CEO

(BR)EBO

CES

SBO
SBR

FE

FE1/hFE2

CEsat

T
T

c

re
cf

> 65 V
> 33 V

> 4V

< 20 mA

> 20 mJ
> 20 mJ

typ. 30
15 to 50

< 1,2

typ. 2,4 V

typ. 230 MHz
typ. 235 MHz

typ. 380 pF

typ. 235 pF
typ. 4,5 pF

Notes

1. Measured under pulse conditions: t

= 500 µs.

p

2. Measured under pulse conditions: tp= 300 µs; δ = 0,02.

August 1986 4

Philips Semiconductors Product specification

HF power transistor BLW97

50

handbook, halfpage

h

FE

40

30

20

010 30

typ

20

Fig.4 Tj=25°C.

MGP705

VCE = 28 V

15 V

5 V

IC (A)

260

handbook, halfpage

f

T

(MHz)

220

180

140

100

020

VCB = 28 V

15 V

5 V

typ

10

Fig.5 Tj=25°C; f = 100 MHz; tp= 300 µs.

MGP706

−IE (A)

1000

handbook, halfpage

C

c

(pF)

800

600

400

200

02040

typ

VCB (V)

MGP707

Fig.6 IE=ie= 0; f = 1 MHz; Tj= 25 °C.

August 1986 5

10

handbook, halfpage

I

C

(A)

1

−1

10

2

−

10

Th = 70 °C

25 °C

typ

VBE (mV)

Fig.7 VCE= 28 V.

MGP708

1300500 900

Philips Semiconductors Product specification

HF power transistor BLW97

APPLICATION INFORMATION

R.F. performance in s.s.b. class-AB operation (linear power amplifier).
V

= 28 V; Th= 25 °C; f1= 28,000 MHz; f2= 28,001 MHz.

CE

OUTPUT POWER G

p

η

dt

I

C

(1)

d

3

WdB%AdBdBA

175 (PEP)

> 11,5 > 40 < 7,8 <−30 <−30
typ. 13,0 typ. 50 typ. 6,3 typ. −34 typ. −38

Note

1. The stated intermodulation distortion levels are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.

(1)

d

5

I

C(ZS)

0,1

handbook, full pagewidth

50 Ω

C1

C2

C3

L1 R1

C4

L4

C6

L3

C7

C8

C9

R3

L5

V

CC

R2

C5

T.U.T.

L2

V

BB

Fig.8 Class-AB (s.s.b.) test circuit.

MGP709

C10

C11

C12

50 Ω

C14

C13

August 1986 6

Philips Semiconductors Product specification

HF power transistor BLW97

List of components:

C1 = 47 pF (500 V) multilayer ceramic chip capacitor
C2 = 100 pF film dielectric trimmer
C3 = 2 × 130 pF (300 V) multilayer ceramic chip capacitors in parallel
C4 = 280 pF film dielectric trimmer
C5 = 10 nF (50 V) multilayer ceramic chip capacitor 2222 856 13103
C6 = 2 × 180 pF (300 V) multilayer ceramic chip capacitors in parallel
C7 = 100 nF (50 V) multilayer ceramic chip capacitor 2222 856 48104
C8 = 10 nF (50 V) multilayer ceramic chip capacitor 2222 856 13103
C9 = 2,2 µF - 63 V solid aluminium electrolytic capacitor
C10 = 5 × 82 pF (500 V) multilayer ceramic chip capacitors in parallel
C11 = 250 pF air dielectric trimmer
C12 = 5 × 33 pF ceramic feed-through capacitors mounted in parallel on a brass plate
C13 = 100 pF air dielectric trimmer
C14 = 3 × 91 pF (500 V) multilayer ceramic chip capacitors in parallel
R1 = 0,7 Ω - 7 W (7 × 4,7 Ω - 1 W carbon resistors in parallel)
R2 = 27 Ω - 0,25 W carbon resistor
R3 = 4,7 Ω - 0,25 W carbon resistor
L1 = 73 nH; 4 turns Cu wire (1,5 mm); int. dia. 7 mm; length 9,4 mm; leads 2 × 5 mm
L2 = Ferroxcube wide-band h.f. choke grade 3B (cat. no. 4312 020 36640); 6 leads in parallel
L3 = 70,4 nH; 4 turns Cu wire (2 mm); int. dia. 7 mm; length 14,8 mm; leads 2 × 5 mm
L4 = 83,5 nH; 4 turns Cu wire (2 mm); int. dia. 8 mm; length 15 mm; leads 2 × 5 mm
L5 = Ferroxcube wide-band h.f. choke grade 3 B (cat. no. 4312 020 36640) with 6 leads in parallel

(1)

(1)

(1)

(1)

(1)

Note

1. American Technical Ceramics capacitor or capacitor of same quality.

August 1986 7

Philips Semiconductors Product specification

HF power transistor BLW97

−20

handbook, halfpage

d3, d

5

(dB)

−40

−60

−80

0 120 240

VCE= 28 V; I

= 28,001 MHz; Th=25°C.

f

2

= 0,1 A; f1 = 28,000 MHz;

C(ZS)

typ

d

3

d

5

PL (W) P.E.P.

Fig.9 Intermodulation distortion (see note on

preceding page).

MGP710

16

handbook, halfpage

G

P

(dB)

12

typ

8

4

0

0 120 240

VCE= 28 V; I

= 28,001 MHz; Th=25°C.

f

2

= 0,1 A; f1 = 28,000 MHz;

C(ZS)

G

P

η

c

dt

PL (W) P.E.P.

Fig.10 Power gain and double-tone efficiency.

MGP711

80

60

40

20

0

η

(%)

c

dt

RUGGEDNESS

The BLW97 is capable of withstanding full load mismatch
(VSWR = 50 through all phases) up to 150 W (P.E.P.) or a
load mismatch (VSWR = 5 through all phases) up to
175 W (P.E.P.) under the following conditions:

VCE= 28 V; f = 28 MHz; Th=25°C; R

th mb-h

= 0,2 K/W.

Figures 11 and 12 t typical curves which are valid for one
transistor of a push-pull amplifier in s.s.b. class-AB
operation.

30

handbook, halfpage

G

P

(dB)

20

10

11010

VCE= 28 V; I

= 175 W(PEP); Th=25°C;

P

L

= 1,55 Ω

Z

L

C(ZS)

typ

= 0,1 A;

Fig.11 Power gain.

f (MHz)

MGP712

2

August 1986 8

Philips Semiconductors Product specification

HF power transistor BLW97

handbook, halfpage

4

r

C(ZS)

i

−x

i

= 0,1 A;

typ

f (MHz)

r

, −x

i

i

(Ω)

2

0

11010

VCE= 28 V; I

= 175 W(PEP); Th=25°C;

P

L

= 1,55 Ω

Z

L

Fig.12 Input impedance (series components).

MGP713

2

handbook, halfpage

1

ri, x

i

(Ω)

0.5

0

−0.5
25 125

VCE= 28 V; PL= 175 W; Th=25°C;
class-B operation.

typ

x

i

r

i

75

f (MHz)

Fig.13 Input impedance (series components).

MGP714

MGP715

handbook, halfpage

3

R

L

(Ω)

2

1

0

25 125

VCE= 28 V; PL= 175 W; Th=25°C;
class-B operation.

typ

R

L

X

L

75

f (MHz)

1.5

1.0

0.5

0

X

(Ω)

L

Fig.14 Load impedance (series components).

August 1986 9

20

handbook, halfpage

G

P

(dB)

15

10

5

25 125

VCE= 28 V; PL= 175 W; Th=25°C;
class-B operation.

typ

Fig.15 Power gain.

MGP716

75

f (MHz)

Philips Semiconductors Product specification

HF power transistor BLW97

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT121B

D

A

F

H

43

α

12

H

q

U

1

L

C

B

b

p

w

M

C

2

A

U

U

2

w

M

AB

1

D

3

1

c

Q

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

12.83

12.86

0.16

0.10

0.006

0.004

IEC JEDEC EIAJ

12.59

0.506

0.496

12.57

0.505

0.495

F

D

1

2.67

28.45

2.41

25.52

1.120

0.105

0.095

0.312

1.005

0.249

REFERENCES

7.93

6.32

0.130

0.120

UNIT

inches

A

7.27

mm

6.17

0.229

0.286

0.219

0.243

OUTLINE
VERSION

SOT121B 97-06-28

pH

3.30

3.05

Q

4.45

3.91

0.175

0.154

q

18.42

0.725

U

1

24.90

24.63

0.98

0.97

U

2

6.48

6.22

0.255

0.245

w1w

U

3

12.32

0.51

12.06

0.485

0.02

0.475

EUROPEAN

PROJECTION

August 1986 10

2

1.02

0.04

ISSUE DATE

αL

45°

Philips Semiconductors Product specification

HF power transistor BLW97

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

August 1986 11