Datasheet BLW96 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLW96

HF/VHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

DESCRIPTION

N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated high power
industrial and military transmitting

conditions. Transistors are supplied
in matched h

groups.

FE

The transistor has a1⁄2" flange
envelope with a ceramic cap. All

leads are isolated from the flange.
equipment in the h.f. and v.h.f. band.
The transistor presents excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch

QUICK REFERENCE DATA

R.F. performance up to T

=25°C

h

I
MODE OF
OPERATION

s.s.b. (class-AB) 50 1,6 − 28 25 − 200 (P.E.P.) > 13,5 > 40

V

CE

V

f

MHz

P

W

L

G

p

dB

%

η

(1)

d

dB

3

d

dB

5

<−30 <−30 0,1

c.w. (class-B) 50 108 200 typ. 6,5 typ. 67 −−(6)
s.s.b. (class-A) 40 28 50 (P.E.P.) typ. 19 − typ. −40 <−40 (4)

Note

1. η

at 200 W P.E.P.

dt

C(ZS)

(IC)

A

PIN CONFIGURATION

PINNING - SOT121B.

PIN DESCRIPTION

handbook, halfpage

43

1 collector
2 emitter
3 base
4 emitter

21

MLA876

Fig.1 Simplified outline. SOT121B.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T

BE

=0)

CESM
CEO

EBO
C(AV)
CM

=45°CP

mb

rf

stg

j

max. 110 V
max. 55 V
max. 4 V
max. 12 A
max. 40 A
max. 340 W

−65 to + 150 °C

max. 200 °C

2

10

handbook, halfpage

I

C

(A)

10

Th = 70 °C

1

10 10

Fig.2 D.C. SOAR.

MGP685

Tmb = 45 °C

VCE (V)

400

handbook, halfpage

P

tot

(W)

300

200

100

2

0

0 50 100 150

I Continuous d.c. operation
II Continuous r.f. operation; f >1 MHz
III Short-time operation during mismatch; f > 1 MHz

ΙΙΙ

derate by

1.58 W/K

ΙΙ

Ι

1.35 W/K

MGP686

Th (°C)

Fig.3 Power/temperature derating curves.

THERMAL RESISTANCE

(dissipation = 150 W; T

= 100 °C, i.e. Th=70°C)

mb

From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R

August 1986 3

th j-mb(dc)
th j-mb(rf)
th mb-h

= 0,63 K/W
= 0,45 K/W
= 0,2 K/W

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

CHARACTERISTICS

T

=25°C

j

Collector-emitter breakdown voltage

V

=0;IC=50mA V

BE

Collector-emitter breakdown voltage

open base; IC= 200 mA V

Emitter-base breakdown voltage

open collector; IE=20mA V

Collector cut-off current

VBE=0;VCE=55V I

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E
R

=10Ω E

BE

D.C. current gain

(1)

IC= 7 A; VCE=5 V h

(BR)CES

(BR)CEO

(BR)EBO

CES

SBO
SBR

FE

> 110 V

> 55 V

> 4V

< 10 mA

> 20 mJ
> 20 mJ

typ.

15 to3050

D.C. current gain ratio of matched devices

(1)

IC= 7 A; VCE=5V h

Collector-emitter saturation voltage

(1)

IC= 20 A; IB = 4 A V

Transition frequency at f = 100 MHz

(2)

−IE= 7 A; VCB= 45 V f
= 20 A; VCB= 45 V f

−I

E

Collector capacitance at f = 1 MHz

IE=Ie= 0; VCB=50V

Feedback capacitance at f = 1 MHz C

I

= 150 mA; VCE=50V C

C

Collecting-flange capacitance C

Notes

1. Measured under pulse conditions: t

≤ 300 µs; δ≤0,02.

p

2. Measured under pulse conditions: tp≤ 50 µs; δ≤0,01.

FE1/hFE2

CEsat

T
T

c
re
cf

≤ 1,2

typ. 1,9 V

typ. 235 MHz
typ. 245 MHz

typ. 280 pF
typ. 170 pF
typ. 4,4 pF

August 1986 4

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

10

handbook, halfpage

−I

E

(A)

1

−1

10

−2

10

MGP687

Th = 70 °C

25 °C

VBE (mV)

Fig.4 Typical values; VCE= 40 V.

50

handbook, halfpage

h

FE

40

30

20

10

1250500 1000750

0

010

VCE = 45 V

20

MGP688

15 V

5 V

(A)

30

I

C

Fig.5 Typical values; Tj=25°C.

300

handbook, halfpage

f

T

(MHz)

200

100

0

0 102030

VCB = 45 V

15 V

5 V

MGP689

−IE (A)

Fig.6 Typical values; f = 100 MHz; Tj=25°C.

August 1986 5

1000

handbook, halfpage

C

c

(pF)

750

500

250

0

0 255075

Fig.7 IE=Ie= 0; f = 1 MHz; Tj=25°C.

MGP690

typ

VCB (V)

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

APPLICATION INFORMATION

R.F. performance in s.s.b. class-AB operation (linear power amplifier)
V

= 50 V; Th=25°C; f1= 28,000 MHz; f2 = 28,001 MHz

CE

OUTPUT POWER G

p

ηdt (%) IC(A) d

(1)

3

W dB at 200 W (P.E.P.) dB dB A

25 to 200 (P.E.P.) > 13,5 > 40 < 5,0 <−30 < −30 0,1

(1)

d

5

I

C(ZS)

L3

C10

C11

C12 C13

+V

CC

handbook, full pagewidth

50 Ω

C1

C2

L1 R1

C4

C3

temperature

compensated bias

(Ri < 0.1 Ω)

L4

T.U.T.

L2

R2

C5

C6

C7

C8

C9

Fig.8 Test circuit; s.s.b. class-AB.

List of components:

C1 = C4 = C10 = C14 = 100 pF film dielectric trimmer
C2 = 27 pF ceramic capacitor (500 V)
C3 = 270 pF polysterene capacitor (630 V)
C5 = C7 = C8 = 220 nF multilayer ceramic chip capacitor

(2)

C6 = 27 pF multilayer ceramic chip capacitor (500 V; ATC

)

C9 = 47 µF/63 V electrolytic capacitor

(2)

)

(2)

) in parallel

(2)

) in parallel

C11 = 2 × 36 pF multilayer ceramic chip capacitors (500 V; ATC
C12 = 2 × 43 pF multilayer ceramic chip capacitors (500 V; ATC
C13 = 43 pF multilayer ceramic chip capacitor (500 V; ATC
L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9,0 mm; length 6,1 mm; leads 2 × 5 mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 150 nH; 5 turns Cu wire (2,0 mm); int. dia. 10,0 mm; length 18,7 mm; leads 2 × 5 mm
L4 = 197 nH; 5 turns Cu wire (2,0 mm); int. dia. 12,0 mm; length 18,6 mm; leads 2 × 5 mm
R1 = 0,66 Ω; parallel connection of 5 × 3,3 Ω metal film resistors (PR37; ± 5%; 1,6 W each)
R2 = 27 Ω carbon resistor (± 5%; 0,5 W)

50 Ω

C14

MGP691

Notes

1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.

2. ATC means American Technical Ceramics.

August 1986 6

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

−25

handbook, halfpage

d3, d

5

(dB)

−35

−45

0 100 200 300

VCE= 50 V; I

= 28,001 MHz; Th=25°C; typical values.

f

2

d

3

d

5

= 0,1 A; f1= 28,000 MHz;

C(ZS)

MGP692

P.E.P. (W)

Fig.9 Intermodulation distortion as a function of

output power.

(1)

100

handbook, halfpage

η

dt

(%)

G

75

50

25

0

0 100

VCE= 50 V; I

= 28,001 MHz; Th=25°C; typical values.

f

2

p

η

dt

= 0,1 A; f1= 28,000 MHz;

C(ZS)

200

MGP693

P.E.P. (W)

Fig.10 Double-tone efficiency and power gain as a

function of output power.

300

20

15

10

5

0

G

(dB)

p

Ruggedness

The BLW96 is capable of withstanding full load mismatch
(VSWR = 50 through all phases) up to 150 W (P.E.P.) or a
load mismatch (VSWR = 5 through all phases) up to
200 W (P.E.P.) under the following conditions:

VCE= 45 V; f = 28 MHz; Th=70°C; R

th mb-h

= 0,2 K/W.

August 1986 7

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

30

handbook, halfpage

G

p

(dB)

20

10

0

11010

VCE= 50 V; I

=25°C; ZL=5Ω; neutralizing capacitor: 47 pF

T

h

= 0,1 A; PL= 200 W (P.E.P.);

C(ZS)

f (MHz)

Fig.11 Power gain as a function of frequency.

MGP694

2

r

i

i

f (MHz)

MGP695

2

4

ndbook, halfpage

r

, −x

i

i

(Ω)

3

2

1

0

11010

VCE= 50 V; I

=25°C; ZL=5Ω; neutralizing capacitor: 47 pF

T

h

r

i

−x

i

= 0,1 A; PL= 200 W (P.E.P.);

C(ZS)

−x

Fig.12 Input impedance (series components) as a

function of frequency.

Figs 11 and 12 are typical curves and hold for one
transistor of a push-pull amplifier with cross-neutralization
in s.s.b. class-AB operation.

August 1986 8

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
T

= 25 °C

h

f (MHz) V

(V) PL(W) PS(W) Gp(dB) IC (A) η (%)

CE

108 50 200 typ. 45 typ. 6,5 typ. 6 typ. 67

PS (W)

MGP696

10

handbook, halfpage

G

p

(dB)

7.5

5

2.5

0

0 100 200 300

G

p

η

400

handbook, halfpage

P

L

(W)

300

200

100

0

0 255075

typ

PL (W)

MGP697

100

η

(%)

75

50

25

0

Fig.13 VCE= 50 V; f = 108 MHz; Th=25°C.

Fig.14 VCE= 50 V; f = 108 MHz; Th=25°C;

typical values.

August 1986 9

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

handbook, halfpage

1

ri, x

i

(Ω)

0.5

0

−0.5

Typical values; VCE= 50 V; PL= 200 W; Th=25°C;
class-B operation

r

i

x

i

25 125

75

f (MHz)

Fig.15 Input impedance (series components).

MGP698

handbook, halfpage

6

RL, X

L

(Ω)

R

4

2

0

25 125

Typical values; VCE= 50 V; PL= 200 W; Th=25°C;
class-B operation

L

X

L

75

f (MHz)

Fig.16 Load impedance (series components).

MGP699

20

handbook, halfpage

G

p

(dB)

10

0

25 125

Typical values; VCE= 50 V; PL= 200 W; Th=25°C;
class-B operation

75

Fig.17

MGP700

f (MHz)

August 1986 10

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

R.F. performance in s.s.b. class-A operation (linear power amplifier)
V

= 40 V; Th=25°C; f1= 28,000 MHz; f2 = 28,001 MHz

CE

OUTPUT POWER

W

G

dB

p

I

C

A

d

3

dB

(1)

typ. 50 (P.E.P.) typ. 19 4 typ. −40 < −40

d

5

dB

(1)

C8

C9

C10

50 Ω

MGP701

handbook, full pagewidth

50 Ω

C1

+V

BB

C2

L4

L1

L2

C3

C4

R1

T.U.T.

C5

C6

L3

C7

+V

CC

Fig.18 Test circuit; s.s.b. class-A.

List of components:

C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = 220 nF polyester capacitor (100 V)
C4 = 100 µF/4 V electrolytic capacitor
C5 = 2 × 330 nF polyester capacitors (100 V) in parallel
C6 = 47 µF/63 V electrolytic capacitor
C7 = C10 = 2 × 82 pF ceramic capacitors (500 V) in parallel
C8 = C9 = 10 to 150 pF air dielectric trimmer
L1 = 45 nH; 2 turns enamelled Cu wire (1,6 mm); int. dia. 8,0 mm; length 4,0 mm; leads 2 × 3 mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 110 nH; 4 turns enamelled Cu wire (2,0 mm); int. dia. 10,0 mm; length 8,0 mm; leads 2 × 2mm
L4 = 210 nH; 5 turns enamelled Cu wire (2,0 mm); int. dia. 12,0 mm; length 10,0 mm; leads 2 × 2 mm
R1 = 27 Ω carbon resistor (± 5%; 0,5 W)

Note

1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.

August 1986 11

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

−30

handbook, full pagewidth

d

3

(dB)

−40

−50

−60

020 80

IC = 3 A 4 A

40 60

Fig.19 Third order intermodulation distortion as a function of output power.

Th=25°C; f1= 28,000 MHz; f2= 28,001 MHz.

5 A

P.E.P. (W)

(1)

Typical values; VCE=40V;

MGP702

100

August 1986 12

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT121B

D

A

F

H

43

α

12

H

q

U

1

L

C

B

b

p

w

M

C

2

A

U

U

2

w

M

AB

1

D

3

1

c

Q

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

12.83

12.86

0.16

0.10

0.006

0.004

IEC JEDEC EIAJ

12.59

0.506

0.496

12.57

0.505

0.495

F

D

1

2.67

28.45

2.41

0.105

0.095

7.93

25.52

6.32

1.120

0.312

1.005

0.249

REFERENCES

0.130

0.120

UNIT

inches

A

7.27

mm

6.17

0.229

0.286

0.219

0.243

OUTLINE

VERSION

SOT121B 97-06-28

pH

3.30

3.05

Q

4.45

3.91

0.175

0.154

q

18.42

0.725

U

1

24.90

24.63

0.98

0.97

U

6.48

6.22

0.255

0.245

2

w1w

U

3

12.32

0.51

12.06

0.485

0.02

0.475

EUROPEAN

PROJECTION

August 1986 13

2

1.02

0.04

ISSUE DATE

αL

45°

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

August 1986 14