Datasheet BLW90 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLW90

UHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

UHF power transistor BLW90

1

DESCRIPTION

N-P-N silicon planar epitaxial
transistor suitable for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for a nominal
supply voltage of 28 V. The transistor
is resistance stabilized and is
guaranteed to withstand infinite
VSWR at rated output power. High
reliability is ensured by a gold

sandwich metallization.

QUICK REFERENCE DATA

R.F. performance up to T

= 25 °C in an unneutralized common-emitter class-B circuit

h

The transistor is housed in a
capstan envelope with a ceramic cap.
All leads are isolated from the stud.

⁄4"

MODE OF OPERATION V

c.w. 28 470 4 > 11 > 55

PIN CONFIGURATION

handbook, halfpage

Top view

Fig.1 Simplified outline. SOT122A.

CE

V

f

MHz

P
W

L

G

p

dB

η

%

PINNING - SOT122A.

PIN DESCRIPTION

1 collector
2 emitter

4

31

2

MBK187

3 base
4 emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

UHF power transistor BLW90

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage

(peak value); V

open base V
Emitter-base voltage (open collector) V
Collector current

d.c. or average I

(peak value); f > 1 MHz I
Total power dissipation (d.c. and r.f.) up to T
Storage temperature T
Operating junction temperature T

= 0 V

BE

= 25 °CP

mb

CESM
CEO
EBO

C;IC(AV)
CM

tot
stg
j

max. 60 V
max. 30 V
max. 4 V

max. 0,62 A
max. 2,0 A
max. 18,6 W

−65 to + 150 °C

max. 200 °C

handbook, halfpage

1

I

C

(A)

1

−

10

11010

Th = 70 °C

VCE (V)

Fig.2 D.C. SOAR.

MGP660

T

= 25 °C

mb

2

30

handbook, halfpage

P

tot

(W)

20

10

I Continuous d.c. and r.f. operation
II Short-time operation during mismatch

Fig.3 Power derating curves vs. temperature.

THERMAL RESISTANCE

(dissipation = 6 W; T

= 73,6 °C, i.e. Th= 70 °C)

mb

From junction to mounting base

(d.c. and r.f. dissipation) R
From mounting base to heatsink R

MGP661

ΙΙ

Ι

0

0 100

th j-mb
th mb-h

50

Th (°C)

= 9,0 K/W
= 0,6 K/W

August 1986 3

Philips Semiconductors Product specification

UHF power transistor BLW90

CHARACTERISTICS

T

=25°C

j

Collector-emitter breakdown voltage

V

= 0; IC= 4 mA V

BE

(BR)CES

Collector-emitter breakdown voltage

open base; IC= 20 mA V

(BR)CEO

Emitter-base breakdown voltage

open collector; IE= 2 mA V

(BR)EBO

Collector cut-off current

VBE= 0; VCE= 30 V I

CES

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E

R

=10Ω E

BE

D.C. current gain

I

= 0,3 A; VCE=5 V 10 to 100

C

Collector-emitter saturation voltage

(1)

(1)

IC= 1,0 A; IB= 0,2 A V
Transition frequency at f = 500 MHz

(1)

−IE= 0,3 A; VCB= 28 V f

−I

= 1,0 A; VCB= 28 V f

E

h

T
T

SBO
SBR

FE

CEsat

Collector capacitance at f = 1 MHz

I

=0;VCB= 28 V C

E=Ie

c

Feedback capacitance at f = 1 MHz

IC= 20 mA; VCE= 28 V C
Collector-stud capacitance C

re
cs

> 60 V

> 30 V

> 4V

< 2mA

> 1mJ
> 1mJ

typ. 40

typ. 0,9 V

typ. 1,2 GHz
typ. 0,9 GHz

typ. 8,4 pF

typ. 3,6 pF
typ. 1,2 pF

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

August 1986 4

Philips Semiconductors Product specification

UHF power transistor BLW90

100

handbook, halfpage

h

FE

75

50

25

0

0 0.5 1.5

VCE = 25 V

5 V

1

IC (A)

Fig.4 Typical values; Tj=25°C.

MGP662

40

handbook, halfpage

C

c

(pF)

30

20

10

0

0 102030

Fig.5 IE=Ie= 0; f = 1 MHz; Tj= 25 °C.

MGP663

typ

VCB (V)

handbook, halfpage

2

f

T

(GHz)

1.5

1

0.5

0

0 0.5 1 1.5

typ

MGP664

−IE (A)

Fig.6 VCB = 28 V; f = 500 MHz; Tj= 25 °C.

August 1986 5

Philips Semiconductors Product specification

UHF power transistor BLW90

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T

= 25 °C

h

f (MHz) V

(V) PL(W) PS(W) Gp(dB) IC(A) η (%) zi(Ω) ZL (Ω)

CE

470 28 4 < 0,32 > 11 < 0,26 > 55 1,7 + j1,8 8 +j26

470 28 4 typ. 0,23 typ. 12,5 typ. 0,25 typ. 58 −−

R2

+V

CC

C6

50 Ω

C5

MGP665

handbook, full pagewidth

50 Ω

C1

C2

L4

L1

L2

R1

T.U.T.

L3

L6

L5

C3

C4

L7

Fig.7 Test circuit; c.w. class-B.

List of components:

C1 = C5 = C6 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C2 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002)
C3 = 100 pF feed-through capacitor
C4 = 100 nF polyester capacitor
L1 = stripline (34,8 mm × 6,0 mm)
L2 = 320 nH; 13 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 4 mm; leads 2 × 4 mm
L3 = L7 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = stripline (12,0 mm × 6,0 mm)
L5 = 265 nH; 13 turns closely wound enamelled Cu wire (0,35 mm); int. dia. 3,5 mm; leads 2 × 4 mm
L6 = 29 nH; 3 turns closely wound enamelled Cu wire (1 mm); int. dia. 3,5 mm; leads 2 × 4mm
L1 and L4 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (ε

r

thickness 1/16".
R1 = 100 Ω carbon resistor
R2 = 10 Ω carbon resistor

Component layout and printed-circuit board for 470 MHz test circuit are shown in Fig.8.

= 2,74);

August 1986 6

Philips Semiconductors Product specification

UHF power transistor BLW90

94

handbook, full pagewidth

rivet

48

strap

R2

C5

C4

L7

+V

CC

C6

MGP666

C1

C2

L3

C3

R1

L2

L1

strap

L5

L6

L4

Fig.8 Component layout and printed-circuit board for 470 MHz test circuit.

The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.

August 1986 7

Philips Semiconductors Product specification

UHF power transistor BLW90

10

handbook, halfpage

P

L

(W)

typ

5

0

0 0.5 1

Fig.9 VCE= 28 V; f = 470 MHz; Th=25°C.

PS (W)

MGP667

15

handbook, halfpage

G

p

(dB)

10

5

0

010

G

p

η

5

MGP668

PL (W)

Fig.10 Typical values; VCE= 28 V; f = 470 MHz;

Th= 25 °C.

100

η

(%)

50

0

August 1986 8

Philips Semiconductors Product specification

UHF power transistor BLW90

handbook, halfpage

5

ri, x

i

(dB)

0

−5
200 300 500

Typical values; VCE= 28 V; PL= 4 W; Th=25°C.

r

i

x

i

400

f (MHz)

Fig.11 Input impedance (series components).

MGP669

50

handbook, halfpage

RL,X

L

(Ω)

25

0

200 300 500

Typical values; VCE= 28 V; PL= 4 W; Th=25°C.

X

L

R

L

400

Fig.12 Load impedance (series components).

Ruggedness

MGP670

f (MHz)

30

handbook, halfpage

G

p

(dB)

20

10

0

100 200 300 500

Typical values; VCE= 28 V; PL= 4 W; Th=25°C.

Fig.13

400

MGP671

f (MHz)

The BLW90 is capable of withstanding full load mismatch
(VSWR = 50 through all phases) up to 4 W under the
following conditions:

VCE= 28 V; f = 470 MHz; Th=70°C; R

th mb-h

= 0,6 K/W.

August 1986 9

Philips Semiconductors Product specification

UHF power transistor BLW90

PACKAGE OUTLINE

Studded ceramic package; 4 leads SOT122A

D

A

Q

N

1

N

N

3

L

H

D

1

D

2

H
b

4

ceramic
BeO

metal

A

w

X

c

A

M

1

M

M

1

detail X

W

α

3

1

2

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

OUTLINE
VERSION

SOT122A

A

5.97

4.74

b

5.85

5.58

D

6.48

6.22

D

1

2

27.56

7.24

25.78

6.93

REFERENCES

cM

D

0.18

7.50

0.14

7.23

IEC JEDEC EIAJ

L

H

9.91

3.18

9.14

2.66

August 1986 10

N

M

1

1.66

1.39

NN

11.82

11.04

1

max.

1.02

Q

3

3.38

3.86

2.74

2.92

EUROPEAN

PROJECTION

W

8-32

UNC

ISSUE DATE

w

1

0.381

97-04-18

α

90°

Philips Semiconductors Product specification

UHF power transistor BLW90

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

August 1986 11