Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLW898
UHF linear power transistor
Product specification
Supersedes data of 1995 Oct 04
1996 Jul 16
Page 2
Philips Semiconductors Product specification
UHF linear power transistor BLW898
FEATURES
• Internal input matching for wideband operation and high
power gain
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATION
• Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.
DESCRIPTION
NPN silicon planar transistor in a SOT171A 6-lead
rectangular flange package, with a ceramic cap. The
transistor delivers a P
860 MHz and a supply voltage of 25 V.
= 3 W in class-A operation at
o sync
PINNING SOT171A
PIN DESCRIPTION
1 emitter
2 emitter
3 base
4 collector
5 emitter
6 emitter
handbook, halfpage
12345
Top view
6
c
b
e
MAM141
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at T
MODE OF
OPERATION
CW class-A 860 25 1.1 ≥3
Note
1. Three-tone test signal (−8, −16, and −10 dB); d
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
=25°C in a common emitter test circuit.
h
f
(MHz)
V
(V)
CE
= −63 dB.
im
WARNING
I
CQ
(A)
P
o sync
(W)
(1)
G
(dB)
≥9
p
(1)
1996 Jul 16 2
Page 3
Philips Semiconductors Product specification
UHF linear power transistor BLW898
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 28 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 3.7 A
average collector current − 3.7 A
total power dissipation up to Tmb=70°C − 44 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
thermal resistance from junction to
P
= 44 W; Tmb=70°C 3 K/W
tot
mounting-base
thermal resistance from
0.3 K/W
mounting-base to heatsink
120
handbook, halfpage
P
tot
(W)
80
40
0
0
(1) Continuous operation
(2) Short-time operation during mismatch.
(2)
(1)
40 80 160
Fig.2 Power derating curve.
120
MGD531
Tmb °C
1996 Jul 16 3
Page 4
Philips Semiconductors Product specification
UHF linear power transistor BLW898
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE
C
c
C
re
collector-base breakdown voltage IC= 15 mA; IE=0 60 −−V
collector-emitter breakdown voltage IC= 30 mA; IB=0 28 −−V
emitter-base breakdown voltage IE= 0.6 mA; IC= 0 2.5 −−V
collector-base leakage current VBE= 0; VCB=28V −−1.5 mA
collector-emitter leakage current VCE=20V −−3mA
DC current gain VCE= 25 V; IC= 1.1 A 30 − 140
collector capacitance VCB= 25 V; IE=ie=0;
− 18 − pF
f = 1 MHz
feedback capacitance VCB= 25 V; IC= 0; f = 1 MHz − 11 − pF
160
handbook, halfpage
h
FE
120
80
40
0
01
VCE= 25V; tp= 500 µs; δ =<1%.
2
MGD532
IC (A)
Fig.3 DC current gain as a function of collector
current; typical values.
30
MGD533
VCB (V)
60
handbook, halfpage
C
c
(pF)
40
20
0
3
0
IE=ie= 0; f = 1 MHz.
10 20 40
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
1996 Jul 16 4
Page 5
Philips Semiconductors Product specification
UHF linear power transistor BLW898
APPLICATION INFORMATION
RF performance at T
=25°C in a common emitter class-A test circuit.
h
MODE OF
OPERATION
CW class-A 860 25 1.1 ≥3
CW class-A 860 25 1.1 ≥3
f
(MHz)
V
(V)
CE
I
CQ
(A)
P
o sync
(W)
(1)
(2)
G
(dB)
≥9
≥9
p
(1)
(2)
d
(dB)
<−63
<−60
im
(1)
(2)
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −10 dB, sideband signal −16 dB), 0 dB corresponds to
peak sync level.
2. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), 0 dB corresponds to
peak sync level.
Ruggedness in class-A operation
The BLW898 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases, under the
conditions: V
30
handbook, halfpage
P
o sync
(W)
20
= 25 V; ICQ= 1.1 A; Th=25°C; f = 860 MHz; P
CE
MGD534
(1)
(2)
=3W.
o sync
12
handbook, halfpage
G
p
(dB)
8
MGD535
(1)
(2)
10
0
012
VCE= 25 V; ICQ= 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=25°C.
(2) Th=70°C.
3
P
i sync
4
(W)
Fig.5 Output power as a function of input power;
typical values.
1996 Jul 16 5
4
0
010
VCE= 25 V; ICQ= 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=25°C.
(2) Th=70°C.
20 30
P
(W)
o sync
Fig.6 Power gain as a function of output power;
typical values.
Page 6
Philips Semiconductors Product specification
UHF linear power transistor BLW898
P
o sync
MGD536
(1)
(2)
(W)
−10
handbook, halfpage
d
im
(dB)
−30
−50
−70
0
VCE= 25 V; ICQ= 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=25°C.
(2) Th=70°C.
10 20 30
Fig.7 Intermodulation distortion as a function of
output power; typical values.
1.2
=3W;
MGD537
IC (A)
-40
handbook, halfpage
d
im
(dB)
-50
-60
-70
0
VCE= 25 V; ICQ= 1.1 A; f = 860 MHz; P
(3-tone; −8/−16/−10 dB).
(1) Th=70°C.
(2) Th=25°C.
0.4 0.8 1.6
(1)
(2)
o sync
Fig.8 Intermodulation distortion as a function of
collector current; typical values.
handbook, full pagewidth
input
50 Ω
+V
BB
C4
C1
R2
C5
L6
L3
L5
L1
C2
L4
L2
C3
DUT
Fig.9 Class-A test circuit at 860 MHz.
1996 Jul 16 6
L11
L12
R1
C9 C10 C11 C12
C6 C7
L9 L10
L8L7
C8
C13
+V
output
50 Ω
MGD538
CC
Page 7
Philips Semiconductors Product specification
UHF linear power transistor BLW898
handbook, full pagewidth
69
+V
BB
R2
160
C10
7777
+V
CC
C12
L12
C4
C5
C1
Dimensions in mm.
L1
C2
L6
L2 & L3
C3
Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit.
1996 Jul 16 7
L11
C7
C6
L7 & L8L4 & L5
C8
C9
L10L9
R1
C11
C13
MGD539
Page 8
Philips Semiconductors Product specification
UHF linear power transistor BLW898
List of components
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1 multilayer ceramic chip capacitor;
note 1
C2, C8 Tekelec Giga trim 37271 0.6 to 4.5 pF
C3 multilayer ceramic chip capacitor;
note 1
C4, C12 multilayer ceramic chip capacitor 10 nF; 63 V 2222 592 16627
C5 solid aluminium capacitor 10 µF; 63 V 2222 030 38109
C6 multilayer ceramic chip capacitor;
note 2
C7 multilayer ceramic chip capacitor;
note 2
C9 multilayer ceramic chip capacitor;
note 2
C10 solid aluminium capacitor 47 µF; 63 V 2222 031 38479
C11 multilayer ceramic chip capacitor;
note 2
C13 multilayer ceramic chip capacitor;
note 1
L1 stripline; note 3 50 Ω 50 × 2.3 mm
L2 stripline; note 3 50 Ω 10 × 2.3 mm
L3 stripline; note 3 40 Ω 2 × 3.25 mm
L4, L5 stripline; note 3 40 Ω 4 × 3.25 mm
L6 RF choke 220 nH
L7 stripline; note 3 40 Ω 9 × 3.25 mm
L8 stripline; note 3 40 Ω 3.5 × 3.25 mm
L9 stripline; note 3 50 Ω 9 × 2.3 mm
L10 stripline; note 3 50 Ω 48.5 × 2.3 mm
L11 stripline; note 3 40 Ω 41.5 × 3.25 mm
L12 grade 4S2 ferroxcube wideband
RF choke
R1 metal film resistor 50 Ω; 0.6 W 2322 156 14999
R2 metal film resistor 10 Ω; 0.6 W 2322 156 11009
8.2 pF
15 pF
10 pF
2.4 pF
500 pF
330 pF
5.1 pF
4330 030 36301
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. The striplines are on a double copper-clad PCB with PTFE fibre-glass dielectric (ε
1996 Jul 16 8
= 2.2); thickness 0.79 mm.
r
Page 9
Philips Semiconductors Product specification
UHF linear power transistor BLW898
Table 1 Common emitter scattering parameter, ICQ= 1.1 A; VCE=25V.
f
(MHZ)
MAG.
(RAT)
S
11
ANG.
(DEG)
MAG.
(RAT)
S
21
ANG.
(DEG)
MAG.
(RAT)
S
12
ANG.
(DEG)
MAG.
(ANG)
S
22
ANG.
(DEG)
470 0.962 176.1 1.002 68.3 0.017 32.6 0.802 −178.2 15.7
495 0.961 175.9 0.961 66.9 0.017 32.8 0.803 −178.2 15.2
520 0.959 175.7 0.923 65.7 0.017 33.6 0.804 −178.2 14.7
545 0.958 175.5 0.891 64.4 0.018 34.9 0.803 −178.3 14.3
570 0.957 175.3 0.861 63.2 0.018 35.8 0.804 −178.2 14.0
595 0.955 175.0 0.835 62.0 0.018 36.1 0.805 −178.2 13.5
620 0.953 174.8 0.815 61.0 0.019 36.8 0.804 −178.2 13.0
645 0.951 174.5 0.795 59.7 0.019 37.3 0.805 −178.1 12.7
670 0.950 174.2 0.775 58.6 0.019 37.4 0.807 −178.0 12.5
695 0.947 173.9 0.757 57.7 0.020 37.8 0.806 −178.0 12.0
720 0.943 173.7 0.744 56.6 0.021 38.5 0.805 −178.1 11.5
745 0.942 173.4 0.732 55.4 0.021 38.6 0.807 −177.9 11.3
770 0.941 173.1 0.724 54.4 0.021 39.8 0.808 −177.8 11.1
795 0.938 172.8 0.716 53.3 0.021 40.1 0.807 −177.8 10.8
820 0.935 172.5 0.707 51.8 0.022 39.1 0.808 −177.8 10.6
845 0.933 172.1 0.701 50.9 0.021 39.3 0.810 −177.6 10.4
860 0.932 171.9 0.700 50.2 0.022 39.4 0.809 −177.5 10.3
G
UM
(dB)
1996 Jul 16 9
Page 10
Philips Semiconductors Product specification
UHF linear power transistor BLW898
PACKAGE OUTLINE
11.5
1
3
5
(2x)
10.5
5.85
2
4
6
25.2
max
18.42
9.3
max
handbook, full pagewidth
9.15
3.25
2.85
2.25
min
1 (2x)
2.25
1.85
Dimensions in mm.
2.8
3.45
(2x)
3.15
6 max
0.14
Fig.11 SOT171A.
4.50
4.05
7.0
max
MBC828 - 1
1996 Jul 16 10
Page 11
Philips Semiconductors Product specification
UHF linear power transistor BLW898
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 16 11
Page 12
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 1949
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 615 800, Fax. +358 615 80920
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 52 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS,
Tel. +30 1 4894 339/911, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,
Tel. +972 3 645 0444, Fax. +972 3 648 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 83749, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 926 5361, Fax. +7 095 564 8323
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165,
252148 KIEV, Tel. +380 44 476 0297/1642, Fax. +380 44 476 6991
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 825 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1996 SCA50
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 127041/1200/02/pp12 Date of release: 1996 Jul 16 Document order number: 9397 750 00966
Internet: http://www.semiconductors.philips.com/ps/
(1) BLW898_2 June 26, 1996 11:51 am
Loading...