Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLW86
HF/VHF power transistor
Product specification
August 1986
Page 2
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
AB and B operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions. Matched
hFEgroups are available on request.
QUICK REFERENCE DATA
R.F. performance up to T
MODE OF
OPERATION
=25°C
h
V
CE
V
f
MHz
P
W
L
G
p
dB
%
η
z
i
Ω
Y
mS
L
d
3
dB
c.w. (class-B) 28 175 45 > 7,5 > 70 0,7 + j1,3 110 − j62 −
s.s.b. (class-AB) 28 1,6 − 28 5−47,5 (P.E.P.) typ. 19 typ. 45 −−typ. −30
s.s.b. (class-A) 26 1,6 − 28 17 (P.E.P.) typ. 22 −−−typ. −42
PIN CONFIGURATION
PINNING - SOT123
lfpage
1
23
4
handbook, halfpage
MSB057
MBB012
c
b
e
1 collector
2 emitter
3 base
4 emitter
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
PIN DESCRIPTION
August 1986 2
Page 3
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open-collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
=0)
CESM
CEO
EBO
C(AV)
CM
=25°CP
mb
rf
stg
j
max. 65 V
max. 36 V
max. 4 V
max. 4 A
max. 12 A
max. 105 W
−65 to + 150 °C
max. 200 °C
10
handbook, halfpage
I
C
(A)
1
10 10
Th = 70 °C Tmb = 25 °C
Fig.2 D.C. SOAR.
VCE (V)
MGP630
150
handbook, halfpage
P
rf
(W)
100
50
2
0
0 50 100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
ΙΙΙ
derate by 0.58 W/K
ΙΙ
0.43 W/K
Ι
Th (°C)
MGP631
Fig.3 R.F. power dissipation; VCE≤ 28 V; f > 1 MHz.
THERMAL RESISTANCE
(dissipation = 45 W; T
= 83,5 °C, i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
August 1986 3
th j-mb(dc)
th j-mb(rf)
th mb-h
= 2,65 K/W
= 1,95 K/W
= 0,3 K/W
Page 4
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
CHARACTERISTICS
T
=25°C unless otherwise specified
j
Collector-emitter breakdown voltage
V
=0;IC=25mA V
BE
Collector-emitter breakdown voltage
open base; IC= 100 mA V
Emitter-base breakdown voltage
open collector; IE=10mA V
Collector cut-off current
VBE= 0; VCE=36V I
Second breakdown energy; L = 25 mH; f = 50 Hz
open base E
R
=10Ω E
BE
D.C. current gain
(1)
IC= 2,5 A; VCE=5V
D.C. current gain ratio of matched devices
(1)
IC= 2,5 A; VCE=5 V h
Collector-emitter saturation voltage
(1)
IC= 7,5 A; IB= 1,5 A V
Transition frequency at f = 100 MHz
(1)
−IE= 2,5 A; VCB= 28 V f
= 7,5 A; VCB= 28 V f
−I
E
Collector capacitance at f = 1 MHz
IE=Ie= 0; VCB=28V C
Feedback capacitance at f=1MHz
I
= 100 mA; VCE=28V C
C
Collector-flange capacitance C
(BR)CES
(BR)CEO
(BR)EBO
CES
SBO
SBR
h
FE
FE1/hFE2
CEsat
T
T
c
re
cf
> 65 V
> 36 V
> 4V
< 10 mA
> 8mJ
> 8mJ
typ. 45
10 to 80
< 1,2
typ. 1,5 V
typ. 570 MHz
typ. 570 MHz
typ. 82 pF
typ. 54 pF
typ. 2 pF
Note
1. Measured under pulse
conditions: t
≤ 200 µs; δ≤0,02.
p
Fig.4 Typical values;
VCE= 28 V.
August 1986 4
(A)
4
I
C
2
0
0.5
handbook, halfpage
Th = 70 °C
MGP632
25 °C
1
VBE (V)
1.5
Page 5
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
100
handbook, halfpage
h
FE
50
0
0 5 10 15
MGP633
VCE = 28 V
5 V
IC (A)
Fig.5 Typical values; Tj=25°C.
300
handbook, halfpage
C
c
(pF)
200
100
0
02040
Fig.6 IE =Ie= 0; f = 1 MHz; Tj=25°C.
MGP634
typ
VCB (V)
1000
handbook, full pagewidth
f
T
(MHz)
500
0
0510
VCB = 28 V
15 V
Fig.7 Typical values; f = 100 MHz; Tj=25°C.
−IE (A)
MGP635
15
August 1986 5
Page 6
Philips Semiconductors Product specification
,,
HF/VHF power transistor BLW86
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T
=25°C
h
f (MHz) V
(V) PL(W) PS(W) GP(dB) IC(A) η (%) zi(Ω) YL(mS)
CE
175 28 45 < 8 > 7,5 < 2,47 > 70 0,7 + j1,3 110− j62
handbook, full pagewidth
C6a
C7
50 Ω
C8
MGP604
50 Ω
C1
C2
C3a
L1
L2
R1
L4
C3b
L3
L5
T.U.T.
C4
L7
C6b
L6
C5
R2
L8
+V
CC
Fig.8 Test circuit; c.w. class-B.
List of components:
C1 = C7 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
C3a = C3b = 47 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor
C5 = 100 nF polyester capacitor
C6a = 2,2 pF ceramic capacitor (500 V)
C6b = 1,8 pF ceramic capacitor (500 V)
C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
L1 = 14 nH; 1 turn Cu wire (1,6 mm); int. dia. 7,7 mm; leads 2 × 5 mm
L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm
L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor
L6 = 80 nH; 3 turns Cu wire (1,6 mm); int. dia. 9,0 mm; length 8,0 mm; leads 2 × 5 mm
L7 = 62 nH; 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 8,1 mm; leads 2 × 5 mm
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/6".
R1 = R2 = 10 Ω carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit see Fig.9.
August 1986 6
Page 7
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
handbook, full pagewidth
1888MJK
R1
150
C4
C5
72
L8L3
R2
+V
CC
C1 C2
C3a
L2
L1
L4
C3b
L6
L5
C6a
C7
L7
C6b
C8
1888MJK
rivet
MGP605
Fig.9 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
To minimize the dielectric losses, the ground plane under the interconnection of L7 and C7 has been removed.
August 1986 7
Page 8
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
75
handbook, halfpage
P
L
(W)
50
25
0
01020
70 °CTh = 25 °C
PS (W)
Fig.10 Typical values; VCE= 28 V; f = 175 MHz.
100
handbook, halfpage
MGP636
MGP638
10
handbook, halfpage
G
p
(dB)
5
0
0 255075
G
p
η
MGP637
PL (W)
Fig.11 Typical values; VCE= 28 V; f = 175 MHz;
− − − Th=25°C; Th=70°C.
100
η
(%)
50
0
P
Lnom
(W)
(VSWR = 1)
50
0
110
The graph shows the permissible output power under
nominal conditions (VSWR = 1) as a function of the
expected VSWR during short-time mismatch
conditions with heatsink temperatures as parameter.
Th = 50 °C
VSWR
70 °C
90 °C
2
10
Fig.12 R.F. SOAR; c.w. class-B operation;
f = 175 MHz; VCE= 28 V; R
th mb-h
= 0,3 K/W
August 1986 8
Page 9
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
2.5
handbook, halfpage
x
ri, x
i
(Ω)
−2.5
Typical values; VCE= 28 V; PL= 45 W; Th=25°C.
r
i
0
x
i
0 100 200 300
i
r
i
f (MHz)
Fig.13 Input impedance (series components).
MGP639
10
handbook, halfpage
R
(Ω)
Typical values; VCE= 28 V; PL= 45 W; Th=25°C.
R
L
L
C
L
5
0
0 100
R
L
C
L
200
f (MHz)
Fig.14 Load impedance (parallel components).
OPERATING NOTE
MGP640
300
0
C
(pF)
−250
−500
L
25
handbook, halfpage
G
p
(dB)
20
15
10
5
0
0 100 200 300
Typical values; VCE= 28 V; PL= 45 W; Th=25°C.
Fig.15 Power gain versus frequency.
f (MHz)
MGP641
Below 75 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
August 1986 9
Page 10
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
V
= 28 V; f1= 28,000; f2= 28,001 MHz.
CE
OUTPUT POWER
W
G
dB
P
ηdt(%)
at 47,5 W
IC(A)
(P.E.P.)
dB
d
3
(1)
dB
d
5
(1)
I
C(ZS)
mA
T
°C
h
5 to 47,5 (P.E.P.) typ. 19 typ. 45 typ. 1,9 typ. −30 <−30 50 25
5 to 42,5 (P.E.P.) typ. 19 −−typ. −30 <−30 50 70
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
C7
handbook, full pagewidth
50 Ω
C1
temperature
compensated bias
L1
C2
R1
C3
R2
T.U.T.
L3
L2
L4
C4
C5 C6
+V
50 Ω
C8
CC
MGP642
Fig.16 Test circuit; s.s.b. class-AB.
List of components:
C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = C5 = C6 = 220 nF polyester capacitor
C4 = 56 pF ceramic capacitor (500 V)
C7 = C8 = 15 to 575 pF film dielectric trimmer
L1 = 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 7,0 mm; leads 2 × 5mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 4 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 9,4 mm; leads 2 × 5 mm
L4 = 7 turns enamelled Cu wire (1,6 mm); int. dia. 12 mm; length 17,2 mm; leads 2 × 5 mm
R1 =1,2 Ω; parallel connection of 4 × 4,7 Ω carbon resistors
R2 = 39 Ω carbon resistor
August 1986 10
Page 11
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
−20
handbook, halfpage
d3, d
5
(dB)
d
3
−30
−40
d
5
−50
02550
VCE= 28 V; I
= 28,001 MHz; typical values.
f
2
C(ZS)
Th =
90 °C
70 °C
50 °C
25 °C
P.E.P. (W)
= 50 mA; f1= 28,000 MHz;
MGP643
Fig.17 Intermodulation distortion as a function of
output power.
(1)
50
handbook, halfpage
η
dt
(%)
40
30
20
10
025
VCE= 28 V; I
= 28,001 MHz; Th=25°C; typical values.
f
2
G
p
η
dt
= 50 mA; f1= 28,000 MHz;
C(ZS)
50
MGP644
P.E.P. (W)
Fig.18 Double-tone efficiency and power gain as a
function of output power.
20
G
p
(dB)
15
10
5
0
75
30
handbook, halfpage
G
p
(dB)
20
10
0
11010
VCE= 28 V; I
=25°C; ZL= 6,4 Ω.
T
h
= 50 mA; PL= 47,5 W;
C(ZS)
f (MHz)
Fig.19 Power gain as a function of frequency.
MGP645
2
f (MHz)
MGP646
2
20
handbook, halfpage
r
, x
i
i
(Ω)
10
0
−10
11010
VCE= 28 V; I
=25°C; ZL= 6,4 Ω.
T
h
= 50 mA; PL= 47,5 W;
C(ZS)
r
i
x
i
Fig.20 Input impedance (series components) as a
function of frequency.
Figs 19 and 20 are typical curves and hold for an
unneutralized amplifier in s.s.b. class-AB operation.
August 1986 11
Page 12
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
Ruggedness in s.s.b. operation
The BLW86 is capable of withstanding a load mismatch (VSWR = 50) under the following conditions: class-AB operation;
f1= 28,000 MHz; f2= 28,001 MHz; VCE= 28 V; Th=70°C and P
R.F. performance in s.s.b. class-A operation (linear power amplifier)
V
= 26 V; f1= 28,000 MHz; f2= 28,001 MHz
CE
= 50 W P.E.P.
Lnom
OUTPUT POWER
W
G
dB
P
I
C
A
dB
d
3
(1)
dB
d
5
(1)
T
°C
h
17 (P.E.P.) typ. 22 1,7 typ. −40 <−40 70
17 (P.E.P.) typ. 22 1,7 typ. −42 <−40 25
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
C7
C8
C10
L5
+V
CC
50 Ω
C11
handbook, full pagewidth
50 Ω
C1
C2
BY206
L1 R3
R4
L2
R5 R8
C3
R7
L3
C4
T.U.T.
R9
C6
C5
L4
R6
R2R1
Fig.21 Test circuit; s.s.b. class-A.
August 1986 12
BD204
C9
MGP647
Page 13
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
List of components in Fig.21:
C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = 22 nF ceramic capacitor (63 V)
C4 = 47 µF/10 V electrolytic capacitor
C5 = 56 pF ceramic capacitor (500 V)
C6 = 47 µF/35 V electrolytic capacitor
C7 = C8 = 220 nF polyester capacitor
C9 = 10 µF/35 V electrolytic capacitor
C10 = 10 to 210 pF film dielectric trimmer
C11 = 15 to 575 pF film dielectric trimmer
L1 = 3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 × 5 mm
L2 = L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = 11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
L5 = 14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
R1 = 600 Ω; parallel connection of 2 × 1,2 kΩ carbon resistors (±5%; 0,5 W each)
R2 = 15 Ω carbon resistor (±5%; 0,25 W)
R3 = 1,2Ω; parallel connection of 4 × 4,7 Ω carbon resistors (±5%; 0,125 W each)
R4 = 33 Ω carbon resistor (±5%; 0,25 W)
R5 = 18 Ω carbon resistor (±5%; 0,25 W)
R6 = 120 Ω wirewound resistor (±5%; 5,5 W)
R7 = 1 Ω carbon resistor (±5%; 0,125 W)
R8 = 47 Ω wirewound potentiometer (3 W)
R9 = 1,57 Ω; parallel connection of 3 × 4,7 Ω wirewound resistors (±5%; 5,5 W each)
−20
handbook, halfpage
d
3
(dB)
−30
−40
−50
−60
030
IC = 1.4 A
1.55 A
1.7 A
10 20
MGP648
P.E.P. (W)
Fig.22 Intermodulation distortion as a function of output power. Typical values; VCE= 26 V; Th=70°C;
f1= 28,000 MHz; f2= 28,001 MHz.
August 1986 13
Page 14
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads SOT123A
D
A
F
H
α
1
H
q
U
1
L
C
B
w
M
C
2
b
43
p
2
0 5 10 mm
scale
A
U
2
w
M
AB
1
c
U
3
Q
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.82
5.56
c
Db
9.73
0.18
9.47
0.10
0.397
0.383
0.007
0.004
IEC JEDEC EIAJ
0.373
0.371
D
9.63
9.42
F
1
2.72
20.71
2.31
19.93
0.815
0.107
0.091
0.221
0.785
0.203
REFERENCES
5.61
5.16
pH
3.33
3.04
0.131
0.120
Q
4.63
4.11
0.182
0.162
q
18.42
0.725
U
1
25.15
24.38
0.99
0.96
U
6.61
6.09
0.26
0.24
2
w
U
1
3
9.78
9.39
0.385
0.370
EUROPEAN
PROJECTION
UNIT
inches
A
7.47
mm
6.37
0.229
0.294
0.219
0.251
OUTLINE
VERSION
SOT123A 97-06-28
August 1986 14
w
2
1.020.51
0.040.02
ISSUE DATE
αL
45°
Page 15
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986 15
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