Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLW83
HF/VHF power transistor
Product specification
August 1986
Page 2
Philips Semiconductors Product specification
HF/VHF power transistor BLW83
DESCRIPTION
N-P-N silicon planar epitaxial
transistor for use in transmitting
amplifiers operating in the h.f. and
v.h.f. bands, with a nominal supply
Matched h
request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
groups are available on
FE
voltage of 28 V. The transistor is
specified for s.s.b. applications as
linear amplifier in class-A and AB.
The device is resistance stabilized
and is guaranteed to withstand
severe load mismatch conditions.
QUICK REFERENCE DATA
R.F. performance
MODE OF OPERATION V
V
CE
f
MHz
P
W
L
G
p
dB
η
dt
%
I
C
A
d
dB
3
s.s.b. (class-A) 26 1,6 − 28 0 − 10 (P.E.P.) > 20 − 1,35 <−40 70
s.s.b. (class-AB) 28 1,6 − 28 3 − 30 (P.E.P.) typ. 21 typ. 40 typ. 1,34 typ. −30 25
PIN CONFIGURATION
PINNING - SOT123
PIN DESCRIPTION
lfpage
1
4
c
handbook, halfpage
b
1 collector
2 emitter
3 base
4 emitter
T
°C
h
MBB012
23
MSB057
e
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986 2
Page 3
Philips Semiconductors Product specification
HF/VHF power transistor BLW83
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open-collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
= 0)
CESM
CEO
EBO
C(AV)
CM
=25°CP
mb
rf
stg
j
max. 65 V
max. 36 V
max. 4 V
max. 3 A
max. 9 A
max. 76 W
−65 to + 150 °C
max. 200 °C
10
handbook, halfpage
I
C
(A)
1
−1
10
11010
Th = 70 °C
VCE (V)
Fig.2 D.C. SOAR.
MGP586
Tmb = 25 °C
2
100
handbook, halfpage
P
rf
(W)
50
continuous
d.c. operation
derate by 0.32 W/K
0
0 50 100 150
Fig.3 R.F. power dissipation; VCE≤ 28 V; f ≥ 1 MHz.
THERMAL RESISTANCE
(dissipation = 35 W; T
=80°C, i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
short-time
operation
continuous
r.f. operation
derate by
0.42 W/K
during mismatch
th j-mb(dc)
th j-mb(rf)
th mb-h
MGP587
Th (°C)
= 3,15 K/W
= 2,35 K/W
= 0,3 K/W
August 1986 3
Page 4
Philips Semiconductors Product specification
HF/VHF power transistor BLW83
CHARACTERISTICS
T
=25°C unless otherwise specified
j
Collector-emitter breakdown voltage
V
= 0; IC= 10 mA V
BE
Collector-emitter breakdown voltage
open base; IC= 50 mA V
Emitter-base breakdown voltage
open collector; IE= 10 mA V
Collector cut-off current
V
= 0; VCE= 36 V I
BE
Second breakdown energy; L = 25 mH; f = 50 Hz
open base E
R
=10Ω E
BE
D.C. current gain
= 1,25 A; VCE=5 V h
I
C
D.C. current gain ratio of matched devices
(1)
(1)
IC= 1,25 A; VCE=5 V h
Collector-emitter saturation voltage
(1)
IC= 3,75 A; IB= 0,75 A V
Transition frequency at f = 100 MHz
(1)
−IE= 1,25 A; VCB= 28 V f
−I
= 3,75 A; VCB= 28 V f
E
Collector capacitance at f = 1 MHz
I
=0;VCB= 28 V C
E=Ie
Feedback capacitance at f = 1 MHz
I
= 100 mA; VCE= 28 V C
C
Collector-flange capacitance C
(BR)CES
(BR)CEO
(BR)EBO
CES
SBO
SBR
FE
FE1/hFE2
CEsat
T
T
c
re
cf
> 65 V
> 36 V
> 4V
< 4mA
> 8mJ
> 8mJ
typ. 50
10 to 100
< 1,2
typ. 1,5 V
typ. 530 MHz
typ. 530 MHz
typ. 50 pF
typ. 31 pF
typ. 2 pF
Note
1. Measured under pulse conditions: t
Fig.4 Typical values; VCE= 28 V.
≤ 200 µs; δ≤0,02.
p
handbook, halfpage
I
C
(A)
3
2
1
0
012
August 1986 4
Th = 70 °C 25 °C
V
(V)
BE
MGP588
Page 5
Philips Semiconductors Product specification
HF/VHF power transistor BLW83
75
handbook, halfpage
h
FE
50
25
0
0510
MGP589
VCE = 28 V
5 V
IC (A)
Fig.5 Typical values; Tj=25°C.
150
handbook, halfpage
C
c
(pF)
100
50
0
02040
Fig.6 IE=Ie= 0; f = 1 MHz; Tj= 25 °C.
MGP590
typ
VCB (V)
600
handbook, full pagewidth
f
T
(MHz)
400
200
0
02 8
VCB = 28 V
15 V
4
Fig.7 Typical values; f = 100 MHz; Tj= 25 °C.
−IE (A)
MGP591
106
August 1986 5
Page 6
Philips Semiconductors Product specification
HF/VHF power transistor BLW83
APPLICATION INFORMATION
R.F. performance in s.s.b. class-A operation (linear power amplifier)
V
= 26 V; f1= 28,000 MHz; f2= 28,001 MHz
CE
OUTPUT POWER
W
> 10 (P.E.P.)
typ. 11 (P.E.P.)
G
dB
p
I
C
A
dB
d
3
(1)
dB
d
5
(1)
T
°C
> 20 1,35 −40 <−40 70
h
typ. 12 (P.E.P.) typ. 24 1,35 −40 <−40 25
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
C7
C8
C10
L5
C11
50 Ω
C12
handbook, full pagewidth
50 Ω
C1
L1 R3
C2
T.U.T.
R4
L2
L3
R7
C3
C4
C6
C5
L4
R5 R8
BY206
R6
R2R1
Fig.8 Test circuit; s.s.b. class-A.
August 1986 6
R9
BD204
C9
+V
MGP592
CC
Page 7
Philips Semiconductors Product specification
HF/VHF power transistor BLW83
List of components in Fig.8:
C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = 22 nF ceramic capacitor (63 V)
C4 = 47 µF/10 V electrolytic capacitor
C5 = 56 pF ceramic capacitor (500 V)
C6 = 47 µF/35 V electrolytic capacitor
C7 = C8 = 220 nF polyester capacitor
C9 = 10 µF/35 V electrolytic capacitor
C10 = C11 = 7 to 100 pF film dielectric trimmer
C12 = 82 pF ceramic capacitor (500 V)
L1 = 3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads to 2 × 5 mm
L2 = L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = 11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
L5 = 14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
R1 = 600 Ω; parallel connection of 2 × 1,2 kΩ carbon resistors (±5%; 0,5 W each)
R2 = 15 Ω carbon resistor (±5%; 0,25 W)
R3 = 1,2 Ω; parallel connection of 4 × 4,7 Ω carbon resistors (±5%; 0,125 W each)
R4 = 33 Ω carbon resistor (±5%; 0,25 W)
R5 = 18 Ω carbon resistor (±5%; 0,25 W)
R6 = 120 Ω wirewound resistor (±5%; 5,5 W)
R7 = 1 Ω carbon resistor (±5%; 0,125 W)
R8 = 47 Ω wirewound potentiometer (3 W)
R9 = 1,57 Ω; parallel connection of 3 × 4,7 Ω wirewound resistors ( 5%; 5,5 W each)
−20
handbook, halfpage
d
3
(dB)
−40
−60
0 5 10 15
Fig.9 Intermodulation distortion as a function of output power.
Typical values; VCE= 26 V; —— Th=70°C; − − − Th= 25 °C.
August 1986 7
MGP593
IC = 0.8 A 1 A 1.35 A
P.E.P. (W)
Page 8
Philips Semiconductors Product specification
HF/VHF power transistor BLW83
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
V
= 28 V; f1= 28,000 MHz; f2= 28,001 MHz
CE
OUTPUT POWER G
W dB at 30 W P.E.P. dB
p
ηdt(%) IC(A) d
dB
d
5
(1)
3
(1)
I
C(ZS)
mA °C
T
h
3 to 30 (P.E.P.) typ. 21 typ. 40 typ. 1,34 typ. −30 <−30 25 25
3 to 25 (P.E.P.) typ. 21 −−typ. −30 <−30 25 70
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
handbook, full pagewidth
50 Ω
C1
temperature
compensated bias
L1 R1
C2
R2
C3
T.U.T.
L2
L3
C4
C5 C6
C7
L4
+V
50 Ω
C8
CC
MGP594
Fig.10 Test circuit; s.s.b. class-AB.
List of components:
C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = C5 = C6 = 220 nF polyester capacitor
C4 = 56 pF ceramic capacitor (500 V)
C7 = C8 = 15 to 575 pF film dielectric trimmer
L1 = 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 7,0 mm; leads 2 × 5 mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 4 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 9,4 mm; leads 2 × 5 mm
L4 = 7 turns enamelled Cu wire (1,6 mm); int. dia. 12 mm; length 17,2 mm; leads 2 × 5 mm
R1 = 1,2 Ω; parallel connection of 4 × 4,7 Ω carbon resistors
R2 = 39 Ω carbon resistor
August 1986 8
Page 9
Philips Semiconductors Product specification
HF/VHF power transistor BLW83
−20
handbook, halfpage
d
3, d5
(dB)
d
3
−30
d
5
−40
−50
02040
VCE= 28 V; I
= 28,001 MHz; typical values
f
2
C(ZS)
P.E.P. (W)
= 25 mA; f1= 28,000 MHz;
MGP595
Th =
90 °C
70 °C
50 °C
25 °C
Th =
90 °C
70 °C
50 °C
25 °C
Fig.11 Intermodulation distortion as a function of
output power.
40
handbook, halfpage
G
p
(dB)
30
(1)
MGP597
60
handbook, halfpage
η
dt
(%)
40
20
0
02040
VCE= 28 V; I
= 28,001 MHz; Th=25°C; typical values
f
2
= 25 mA; f1= 28,000 MHz;
C(ZS)
G
p
η
dt
P.E.P. (W)
MGP596
Fig.12 Double-tone efficiency and power gain as a
function of output power.
20
handbook, halfpage
r
i
(Ω)
15
r
i
MGP598
30
G
(dB)
20
10
0
−2.5
x
(Ω)
−5
p
i
20
10
0
11010
VCE= 28 V; I
= 25 mA; PL= 30 W; Th= 25 °C; ZL= 9,5Ω
C(ZS)
f (MHz)
2
Fig.13 Power gain as a function of frequency.
Figs 13 and 14 are typical curves and hold for an
unneutralized amplifier in s.s.b. class-AB operation.
August 1986 9
10
x
i
5
0
11010
VCE= 28 V; I
= 25 mA; PL= 30 W; Th= 25 °C; ZL= 9,5 Ω
C(ZS)
f (MHz)
−7.5
−10
−12.5
2
Fig.14 Input impedance (series components) as a
function of frequency.
Ruggedness in s.s.b. operation
The BLW83 is capable of withstanding a load mismatch
(VSWR = 50) under the following conditions:
f1= 28,000 MHz; f2= 28,001 MHz; VCE= 28 V; Th=70°C
and P
= 35 W (P.E.P.).
Lnom
Page 10
Philips Semiconductors Product specification
HF/VHF power transistor BLW83
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads SOT123A
D
A
F
H
α
1
H
q
U
1
L
C
B
w
M
C
2
b
43
p
2
0 5 10 mm
scale
A
U
2
w
M
AB
1
c
U
3
Q
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.82
5.56
c
Db
9.73
0.18
9.47
0.10
0.397
0.383
0.007
0.004
IEC JEDEC EIAJ
0.373
0.371
D
9.63
9.42
F
1
2.72
20.71
2.31
19.93
0.815
0.107
0.091
0.221
0.785
0.203
REFERENCES
5.61
5.16
pH
3.33
3.04
0.131
0.120
Q
4.63
4.11
0.182
0.162
q
18.42
0.725
U
25.15
24.38
0.99
0.96
1
U2U
6.61
6.09
0.26
0.24
w
1
3
9.78
9.39
0.385
0.370
EUROPEAN
PROJECTION
UNIT
inches
A
7.47
mm
6.37
0.229
0.294
0.219
0.251
OUTLINE
VERSION
SOT123A 97-06-28
August 1986 10
w
2
1.020.51
0.040.02
ISSUE DATE
αL
45°
Page 11
Philips Semiconductors Product specification
HF/VHF power transistor BLW83
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986 11
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