Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLW81
UHF power transistor
Product specification
March 1993
Page 2
Philips Semiconductors Product specification
UHF power transistor BLW81
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for a nominal
supply voltages up to 13,5 V.
The resistance stabilization of the
transistor provides protection against
device damage at severe load
mismatch conditions.
QUICK REFERENCE DATA
R.F. performance up to T
MODE OF OPERATION V
=25°C in an unneutralized common-emitter class-B circuit
h
CE
V
c.w. 12,5 470 10 > 6,0 > 60 1,3 + j2,5 150 − j66
c.w. 12,5 175 10 typ. 13,5 typ. 60 1,2 − j0,6 140 − j80
PIN CONFIGURATION
The transistor is housed in a
1
⁄4"
capstan envelope with a ceramic cap.
f
MHz
P
W
L
G
p
dB
η
%
z
i
Ω
PINNING - SOT122A.
Y
mS
L
PIN DESCRIPTION
1 collector
2 emitter
Top view
4
31
2
MBK187
3 base
4 emitter
handbook, halfpage
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993 2
Page 3
Philips Semiconductors Product specification
UHF power transistor BLW81
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (d.c. or average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
=0)
CESM
CEO
EBO
C
CM
=25°CP
mb
tot
stg
j
max 36 V
max 17 V
max 4 V
max 2,5 A
max 7,5 A
max 40 W
−65 to +150 °C
max 200 °C
10
handbook, halfpage
I
C
(A)
Th = 70 °C
1
11010
THERMAL RESISTANCE
Fig.2
T
mb
= 25 °C
VCE (V)
MGP573
2
50
handbook, halfpage
P
rf
(W)
40
short time operation
during
mismatch
30
20
10
0
0 50 100
MGP574
r.f. power dissipation
VCE ≤ 16.5 V
f > 1 MHz
derate by
0.204 W/K
continuous operation
Th (°C)
Fig.3
From junction to mounting base R
From mounting base to heatsink R
March 1993 3
th j-mb
th mb-h
= 4,3 K/W
= 0,6 K/W
Page 4
Philips Semiconductors Product specification
UHF power transistor BLW81
CHARACTERISTICS
T
=25°C
j
Breakdown voltages
Collector-emitter voltage
=0;IC=25mA V
V
BE
Collector-emitter voltage
open base; I
= 100 mA V
C
Emitter-base voltage
open collector; IE=10mA V
Collector cut-off current
= 0; VCE=17V I
V
BE
D.C. current gain
(1)
IC= 1,25 A; VCE=5V h
Collector-emitter saturation voltage
(1)
IC= 3,75 A; IB= 0,75 A V
Transition frequency at f = 500 MHz
(1)
IC= 1,25 A; VCE= 12,5 V f
I
= 3,75 A; VCE= 12,5 V f
C
Collector capacitance at f = 1 MHz
IE=Ie= 0; VCB= 12,5 V C
Feedback capacitance at f = 1 MHz
IC= 100 mA; VCE= 12,5 V C
Collector-stud capacitance
(BR)CES
(BR)CEO
(BR)EBO
CES
FE
CEsat
T
T
c
re
C
cs
> 36 V
> 17 V
> 4V
< 10 mA
> 10
typ 35
typ 0,75 V
typ 1,3 GHz
typ 0,9 GHz
typ 34 pF
typ 18 pF
typ 1,2 pF
Note
1. Measured under pulse conditions: t
≤ 200 µs; δ≤0,02.
p
March 1993 4
Page 5
Philips Semiconductors Product specification
UHF power transistor BLW81
40
handbook, halfpage
h
FE
30
20
10
0
0 2.5 7.5
Fig.4
typ
5
MGP575
VCE = 5 V
Tj = 25 °C
IC (A)
60
handbook, halfpage
C
c
(pF)
40
20
0
01020
MGP576
IE = Ie = 0
f = 1 MHz
Tj = 25 °C
typ
VCB (V)
Fig.5
handbook, full pagewidth
2
f
T
(GHz)
1.5
1
0.5
0
0 2.5
typ
Fig.6
MGP577
VCE = 12.5 V
f = 500 MHz
Tj = 25 °C
5
IC (A)
7.5
March 1993 5
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Philips Semiconductors Product specification
UHF power transistor BLW81
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T
=25°C
h
f (MHz) V
(V) PL(W) PS(W) GP(dB) IC(A) η (%) zi (Ω) YL (mS)
CE
470 12,5 10 < 2,5 > 6,0 < 1,33 > 60 1,3 + j2,5 150 − j66
470 13,5 10 typ 1,9 typ 7,2 − typ 75 −−
175 12,5 10 typ 0,45 typ 13,5 − typ 60 1,2 − j0,6 140 − j80
handbook, full pagewidth
50 Ω
C1
C2
C3
C4
C10
50 Ω
C9
R2
MGP578
+V
L5
L3
C8
L4
CC
C5
L1
T.U.T.
L2
C6
C7
R1
Fig.7 Class-B test circuit at f = 470 MHz.
List of components:
C1 = 2,2 pF (± 0, 25 pF) ceramic capacitor
C2 = C9 = C10 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 09003)
C3 = 3,9 pF (± 0,25 pF) ceramic capacitor
C4 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C5 = C6 = 15 pF ceramic chip capacitor (cat. no. 2222 851 13159)
C7 = 100 pF ceramic feed-through capacitor
C8 = 100 nF polyester capacitor
L1 = stripline (27,9 mm × 6,0 mm)
L2 = 13 turns closely wound enamelled Cu wire (0,5 mm); int. dia. = 4 mm; leads 2 × 5 mm
L3 = 17 nH; 1
1
⁄2turns enamelled Cu wire (1 mm); spacing 1 mm; int. dia. = 6 mm; leads 2 × 5 mm
L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L5 = stripline (45,8 mm × 6,0 mm)
L1 and L5 are striplines on a double Cu-clad printed circuit board with PTFE fibre-glass dielectric
(ε
= 2,74); thickness 1/16".
r
R1 = 1 Ω (± 5%) carbon resistor
R2 = 10 Ω (± 5%) carbon resistor
Component layout and printed-circuit board for 470 MHz test circuit (Fig.8).
March 1993 6
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Philips Semiconductors Product specification
UHF power transistor BLW81
124
handbook, full pagewidth
56
C3
C1
C2 L1 L5
C4
The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side
being fully metallized to serve as earth. Earth connections are made by means of hollow rivets.
R1
rivet
L2
C5
C6
L3
C7
R2
C8
Fig.8 Component layout and printed-circuit board for 470 MHz test circuit.
C10
C9
L4
+V
CC
MGP579
March 1993 7
Page 8
Philips Semiconductors Product specification
UHF power transistor BLW81
30
handbook, halfpage
P
L
(W)
20
10
0
0
15
handbook, halfpage
P
Lnom
(W)
VSWR = 1
13
11
9
1 1.1 1.2 1.3
f = 470 MHz
typical values
Fig.9
2.5
Th = 25 °C
70 °C
PS (W)
VSWR =
2.25
5
10
50
MGP580
VCC = 12.5 V
VCC = 13.5 V
MGP582
P
S
P
Snom
V
CC
V
CCnom
10
handbook, halfpage
G
p
(dB)
5
5
0
0 102030
f = 470 MHz
Th = 25 °C
typical values
MGP581
VCC = 12.5 V
VCC = 13.5 V
η
G
p
PL (W)
100
η
(%)
50
0
Fig.10
Measuring conditions for R.F. SOAR
f = 470 MHz
Th=70°C
R
V
PS=P
= 0,6 K/W
th mb-h
= 12,5 V or 13,5 V
CCnom
Snom
at V
and VSWR = 1 measured in the
CCnom
circuit of Fig.7.
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio, with VSWR as
parameter.
The graph applies to the situation in which the drive
(P
S/PSnom
) increases linearly with supply over-voltage
ratio.
Fig.11
March 1993 8
Page 9
Philips Semiconductors Product specification
UHF power transistor BLW81
OPERATING NOTE
Below 200 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
20
handbook, halfpage
G
p
(dB)
15
10
5
100 300 500
Measuring conditions:
VCC= 12,5V
= 10 W
P
L
=25°C
T
h
typical values
MGP583
power gain versus frequency
(class-B operation)
f (MHz)
Fig.12
handbook, halfpage
4
input impedance (series components)
versus frequency (class-B operation)
ri, x
i
(Ω)
2
r
i
0
x
i
−2
100 300 500
Measuring conditions:
VCC= 12,5 V
= 10 W
P
L
=25°C
T
h
typical values
Fig.13
f (MHz)
x
r
i
i
MGP584
handbook, halfpage
8
load impedance (parallel components)
versus frequency (class-B operation)
R
L
(Ω)
7.5
R
L
7
C
L
6.5
100 300 500
Measuring conditions:
VCC= 12,5 V
= 10 W
P
L
=25°C
T
h
typical values
C
L
R
L
Fig.14
f (MHz)
MGP585
0
C
(pF)
−50
−100
−150
L
March 1993 9
Page 10
Philips Semiconductors Product specification
UHF power transistor BLW81
PACKAGE OUTLINE
Studded ceramic package; 4 leads SOT122A
D
A
Q
N
1
N
N
3
L
H
D
1
D
2
H
b
4
ceramic
BeO
metal
A
w
X
c
A
M
1
M
M
1
detail X
W
α
3
1
2
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
OUTLINE
VERSION
SOT122A
A
5.97
4.74
b
5.85
5.58
D
6.48
6.22
D
1
2
27.56
7.24
25.78
6.93
REFERENCES
cM
D
0.18
7.50
0.14
7.23
IEC JEDEC EIAJ
L
H
9.91
3.18
9.14
2.66
March 1993 10
N
M
1
11.82
1.66
11.04
1.39
1
NN
max.
3.86
1.02
2.92
PROJECTION
Q
3
3.38
2.74
EUROPEAN
W
8-32
UNC
ISSUE DATE
w
1
0.381
97-04-18
α
90°
Page 11
Philips Semiconductors Product specification
UHF power transistor BLW81
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1993 11
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