Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLW78
HF/VHF power transistor
Product specification
August 1986
Page 2
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
It has a
ceramic cap. All leads are isolated
from the flange.
1
⁄2" flange envelope with a
AB or B operated mobile, industrial
and military transmitters in the h.f.
and v.h.f. bands. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions.
QUICK REFERENCE DATA
R.F. performance up to T
MODE OF OPERATION V
=25°C
h
V
CE
I
I
C(ZS)
A
C
f
MHz
P
W
L
G
p
dB
η
%
d
3
dB
(1)
c.w. (class-B) 28 − 150 100 > 6 > 70 −
s.s.b. (class-A) 26 3 28 35 (P.E.P.) typ. 19,5 − typ. −40
s.s.b. (class-AB) 28 0,05 28 100 (P.E.P.) typ. 19,0 typ. 42 typ. −30
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
PIN CONFIGURATION
PINNING - SOT121B.
PIN DESCRIPTION
handbook, halfpage
43
1 collector
2 emitter
3 base
4 emitter
21
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986 2
Page 3
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
=0)
CESM
CEO
EBO
C(AV)
CM
=25°CP
mb
rf
stg
j
max. 70 V
max. 35 V
max. 4 V
max. 10 A
max. 25 A
max. 160 W
−65 to +150 °C
max. 200 °C
2
10
handbook, halfpage
I
C
(A)
10
1
11010
Th = 70 °CTmb = 25 °C
VCE (V)
Fig.2 D.C. SOAR.
MGP543
2
200
handbook, halfpage
P
rf
(W)
150
100
50
0 50 100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
ΙΙΙ
ΙΙ
0.61 W/K
Ι
derate by 0.79 W/K
derate by
Th (°C)
MGP544
Fig.3 R.F. power dissipation; VCE≤ 28 V; f > 1 MHz.
THERMAL RESISTANCE
(dissipation = 80 W; T
=86°C; i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
August 1986 3
th j-mb(dc)
th j-mb(rf)
th mb-h
= 1,45 K/W
= 1,06 K/W
= 0,2 K/W
Page 4
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
CHARACTERISTICS
T
=25°C
j
Collector-emitter breakdown voltage
V
=0;IC=50mA V
BE
Collector-emitter breakdown voltage
open base; IC= 100 mA V
Emitter-base breakdown voltage
open collector; IE= 5 mA V
Collector cut-off current
VBE= 0; VCE=35V I
D.C. current gain
(1)
IC= 5 A; VCE=5V h
Collector-emitter saturation voltage
I
= 15 A; IB=3 A V
C
Transition frequency at f = 100 MHz
(2)
−IE= 5 A; VCB=28V f
−I
= 15 A; VCB=28V f
E
Collector capacitance at f = 1 MHz
I
= 0; VCB=28V C
E=Ie
Feedback capacitance at f=1MHz
I
= 100 mA; VCE=28V C
C
Collector-flange capacitance C
(BR)CES
(BR)CEO
(BR)EBO
CES
FE
CEsat
T
T
c
re
cf
> 70 V
> 35 V
> 4V
< 5mA
20 to 85
typ. 2 V
typ. 370 MHz
typ. 350 MHz
typ. 155 pF
typ. 102 pF
typ. 3 pF
Notes
1. Measured under pulse conditions: t
≤ 300 µs; δ≤0,02.
p
2. Measured under pulse conditions: tp≤ 50 µs; δ≤0,01.
August 1986 4
Page 5
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
75
handbook, halfpage
h
FE
50
25
0
0510
Fig.4 Typical values; Tj=25°C.
750
handbook, full pagewidth
VCE = 28 V
5 V
IC (A)
MGP545
600
handbook, halfpage
C
c
(pF)
400
200
0
02040
Fig.5 IE=Ie= 0; f = 1 MHz; Tj=25°C.
MGP546
typ
VCB (V)
MGP547
f
T
(MHz)
500
250
0
0105 20
Fig.6 Typical values; f = 100 MHz; Tj=25°C.
August 1986 5
VCB = 28 V
15
20 V
−IE (A)
25
Page 6
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T
=25°C
h
f (MHz) V
(V) PL(W) PD(W) η (%) zi(Ω) ZL(Ω)
CE
150 28 100 ≤ 25 ≥ 70 0,74 + j1,35 4,30 + j0,60
handbook, full pagewidth
50 Ω
C1
C2
L5
L1
L3
L2
T.U.T.
C3
C4
C5
+V
L4
C6
CC
C8
50 Ω
C7
MGP548
Fig.7 Test circuit; c.w. class-B; f = 150 MHz.
List of components:
C1 = C2 = C7 = C8 = 5 to 100 pF film dielectric trimmer
C3 = 203 pF; 2 × 82 pF and 39 pF multilayer ceramic chip capacitors (500 V, ATC
C4 = 39 pF multilayer ceramic chip capacitor (500 V, ATC
(1)
)
(1)
) in parallel
C5 = 1 nF feed-through capacitor
C6 = 100 nF polyester capacitor
L1 = strip (30 mm × 8 mm); bent to form inverted ‘U’ shape with top 15 mm above heatsink, and bottom 5 mm above
heatsink
L2 = 1 µH r.f. choke
L3 = strip; shape as shown in Fig.8; 5 mm above heatsink
L4 = strip (40 mm × 8 mm); bent in form , 25 mm at 15 mm above heatsink, 5 mm at 5 mm above heatsink
L5 = strip (75 mm long; width 8 mm); 5 mm above base
L1, L3, L4, and L5 are copper strips with a thickness of 0,6 mm.
Heatsink: aluminium; 0,9 K/W
= 100 W and VCE= 28 V, the output power at heatsink temperatures between 25 °C and 90 °C relative to that at
At P
L
25 °C is diminished by typ. 0,12 W/K.
Component layout on an aluminium heatsink for 150 MHz test circuit is shown in Fig.8.
Note
1. ATC means American Technical Ceramics.
August 1986 6
Page 7
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
handbook, full pagewidth
C5
L4
output
50 Ω
C8
MGP549
input
50 Ω
C1
C2
L2
L1
L3
C3
C4
L5
C7
aluminium heatsink
Fig.8 Component layout on an aluminium heatsink for 150 MHz test circuit. ⊗ Earthing bolts.
August 1986 7
Page 8
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
150
handbook, halfpage
P
L
(W)
100
50
0
02040
typ
PS (W)
Fig.9 VCE= 28 V; f = 150 MHz; Th=25°C.
150
handbook, halfpage
P
Lnom
(W)
(VSWR = 1)
MGP550
MGP552
10
handbook, halfpage
G
p
(dB)
5
0
0 50 100 150
η
G
p
PL (W)
Fig.10 VCE= 28 V; f = 150 MHz; Th=25°C;
typical values.
MGP551
100
η
(%)
50
0
100
Th ≤ 70 °C
50
0
11010
The graph shows the permissible output power
under nominal conditions (VSWR = 1) as a
function of the expected VSWR during short-time
mismatch conditions with heatsink temperatures
as parameter.
≤ 90 °C
VSWR
2
Fig.11 R.F. SOAR; c.w. class-B operation;
f = 150 MHz; VCE=28V;
R
th mb-h
= 0,2 K/W.
August 1986 8
Page 9
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
OPERATING NOTE
Below 50 MHz a base-emitter resistor of 4,7 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
3
handbook, halfpage
ri, x
i
(Ω)
2
x
MGP553
i
RL, X
(Ω)
6
L
handbook, halfpage
MGP554
1
0
−1
−2
−3
0 100 200
VCE= 28V; PL= 100 W; Th=25°C;
typical values; class-B operation.
r
i
x
i
f (MHz)
Fig.12 Input impedance (series components).
30
handbook, halfpage
G
p
(dB)
r
i
MGP555
4
R
L
2
X
L
0
0 100 200
VCE= 28V; PL= 100 W; Th=25°C;
typical values; class-B operation.
f (MHz)
Fig.13 Load impedance (series components).
August 1986 9
20
10
0
0 100 200
VCE= 28V; PL= 100 W; Th=25°C;
typical values; class-B operation.
typ
Fig.14
f (MHz)
Page 10
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
R.F. performance in s.s.b. class-A operation
V
=26V; Th=40°C; f1= 28,000 MHz; f2= 28,001 MHz
CE
OUTPUT POWER
W
35 (P.E.P.) typ. 19,5 3 typ. −40
handbook, full pagewidth
50 Ω
C1
C2
G
p
dB
L1
C3
R2 R4
BY206
R1
C4
R3
I
C
A
L2
R5
C5
R6
BD136
d
3
dB
T.U.T.
L3
R7
C6
C7 C14
C10
C11
L5
L4
C8
+V
CC
C9
R8
C12
50 Ω
C13
Fig.15 Test circuit; s.s.b. class-A; f = 28 MHz.
August 1986 10
MGP556
Page 11
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
List of components:
C1 = 33 pF ceramic capacitor (500 V)
C2 = 100 pF air dielectric trimmer (single insulated rotor type)
C3 = 280 pF air dielectric trimmer (single non-insulated rotor type)
C4 = 180 pF polystyrene capacitor
C5 = C6 = C7 = 3,9 nF ceramic capacitor
C8 = 2 × 33 pF ceramic capacitors in parallel (500 V)
C9 = 330 nF polyester capacitor
C10 = 82 pF ceramic capacitor (500 V)
C11 = 100 pF air dielectric trimmer (single insulated rotor type)
C12 = 180 pF air dielectric trimmer (single non-insulated rotor type)
C13 = 150 pF polystyrene capacitor
C14 = 390 nF polyester capacitor
L1 = 72 nH; 3 turns Cu wire (1,0 mm); int. dia. 7 mm; length 4,8 mm; leads 2 × 5 mm
L2 = Cu strip (28 mm × 5mm×0,2 mm); 18 mm at 3 mm above printed-circuit board
L3 = Ferroxcube choke coil (cat. no. 4312 020 36640)
L4 = 300 nH; 6 turns Cu wire (1,5 mm); int. dia. 12 mm; length 16 mm; leads 2 × 5 mm
L5 = 330 nH; 7 turns Cu wire (1,5 mm); int. dia. 12 mm; length 20,8 mm; leads 2 × 5 mm
R1 = 1,5 kΩ (± 5%) carbon resistor (0,5 W)
R2 = 100 Ω (± 5%) carbon resistor (0,5 W)
R3 = 68 Ω (± 5%) carbon resistor (0,5 W)
R4 = 100 Ω wirewound potentiometer
R5 = 33 Ω (± 5%) carbon resistor (0,5 W)
R6 = 0,68 Ω (± 10%) wirewound resistor (7 W)
R7 = 120 Ω wirewound resistor (8 W)
R8 = 10 Ω (± 10%) carbon resistor (0,5 W)
August 1986 11
Page 12
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
−30
handbook, halfpage
d
3
(dB)
−40
−50
−60
050
typ
25
P.E.P. (W)
MGP557
Fig.16 Intermodulation distortion as a function of
output power; VCE= 26 V; IC=3A;
f1= 28,000 MHz; f2= 28,001 MHz;
Th=40°C.
August 1986 12
Page 13
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
V
= 28 V; Th=25°C; f1= 28,000 MHz; f2= 28,001 MHz
CE
OUTPUT POWER
W
G
dB
p
η
dt
%
I
C
A
d
3
dB
(1)
100 (P.E.P.) typ. 19 typ. 42 typ. 4,3 typ. −30 typ. −37 50
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
d
5
dB
(1)
I
C(ZS)
mA
handbook, full pagewidth
L3
C7
C8
R2
50 Ω
C1
C2
temperature
compensated bias
(Ri < 0.1 Ω)
C3
C4
L1
L2
T.U.T.
R1
C5
C6
C9
Fig.17 Test circuit; s.s.b. class-AB; f = 28 MHz.
List of components:
C1 = C11 = 150 pF air dielectric trimmer (single insulated rotor type)
C2 = 27 pF ceramic capacitor (500 V)
C3 = C12 = 150 pF air dielectric trimmer (single non-insulated rotor type)
C4 = 180 pF ceramic capacitor (500 V)
C5 = C8 = 3,9 nF ceramic capacitor
C6 = 150 µF/6 V solid tantalum capacitor
C7 = 150 pF ceramic capacitor (500 V)
C9 = 100 nF polyester capacitor
C10 = 750 pF mica dielectric trimmer (single insulated rotor type)
C13 = 750 pF mica dielectric trimmer (single non-insulated rotor type)
L1 = 3 turns enamelled Cu wire (1,0 mm); int. dia. 12 mm; length 12 mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 3 turns enamelled Cu wire (2,0 mm); int. dia. 12 mm; length 12 mm
L4 = 2 turns enamelled Cu wire (2,0 mm); int. dia. 12 mm; length 8 mm
R1 = 27 Ω (± 10%) carbon resistor (0,5 W)
R2 = 4,7 Ω (± 10%) carbon resistor (0,5 W)
C10
C11
+V
C12
CC
L4
C13
MGP558
50 Ω
August 1986 13
Page 14
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
−20
handbook, halfpage
d
3, d5
(dB)
−30
d
3
−40
d
5
−50
0 50 100
Typical values; VCE= 28 V; I
= 28,000 MHz; f2= 28,001 MHz;
f
1
=25°C.
T
h
C(ZS)
= 50mA;
Fig.18 Intermodulation distortion
output power.
MGP559
P.E.P. (W)
(1)
as a function of
30
handbook, halfpage
G
p
(dB)
20
10
0
11010
V
= 28V; I
CE
=25°C; ZL= 2,7Ω.
T
h
= 50mA; PL= 100W (P.E.P.);
C(ZS)
f (MHz)
Fig.19 Power gain as a function of frequency.
MGP560
2
10
handbook, halfpage
r
i
(Ω)
5
0
11010
VCE= 28V; I
=25°C; ZL= 2,7Ω.
T
h
= 50mA; PL= 100W (P.E.P.);
C(ZS)
x
i
r
i
f (MHz)
MGP561
0
−5
−10
2
Fig.20 Input impedance (series components).
Figs 19 and 20 are typical curves and hold for an
unneutralized amplifier in s.s.b. class-AB operation.
(Ω)
x
i
August 1986 14
Page 15
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads SOT121B
D
A
F
H
43
α
12
H
q
U
1
L
C
B
b
p
w
M
C
2
A
U
U
2
w
M
AB
1
D
3
1
c
Q
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
5.82
5.56
c
Db
12.83
12.86
0.16
0.10
0.006
0.004
IEC JEDEC EIAJ
12.59
0.506
0.496
12.57
0.505
0.495
F
D
1
2.67
28.45
2.41
25.52
1.120
0.105
0.095
0.312
1.005
0.249
REFERENCES
7.93
6.32
0.130
0.120
UNIT
inches
A
7.27
mm
6.17
0.229
0.286
0.219
0.243
OUTLINE
VERSION
SOT121B 97-06-28
pH
3.30
3.05
Q
4.45
3.91
0.175
0.154
q
18.42
0.725
U
1
24.90
24.63
0.98
0.97
U
2
6.48
6.22
0.255
0.245
w1w
U
3
12.32
0.51
12.06
0.485
0.02
0.475
EUROPEAN
PROJECTION
August 1986 15
2
1.02
0.04
ISSUE DATE
αL
45°
Page 16
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986 16
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