Datasheet BLW60C Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLW60C

VHF power transistor

Product specification

March 1993

Philips Semiconductors Product specification

VHF power transistor BLW60C

DESCRIPTION

N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, industrial
and military transmitters with a

Matched h
request.

It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.

groups are available on

FE

nominal supply voltage of 12,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.

QUICK REFERENCE DATA

R.F. performance up to T

MODE OF OPERATION

=25°C

h

V

CC

VfMHz

P

W

L

G

L

dB

%

η

z

i

Ω

Z

L

Ω

d

dB

3

c.w. (class-B) 12,5 175 45 > 5,0 > 75 1,2 + j1,4 2,6 − j1,2 −

s.s.b. (class-AB) 12,5 1,6-28 3-30 (P.E.P.) typ. 19,5 typ. 35 −−typ. −33

PIN CONFIGURATION

PINNING - SOT120A.

PIN DESCRIPTION

handbook, halfpage

4

1 collector
2 emitter
3 base

31

4 emitter

2

MSB056

Fig.1 Simplified outline. SOT120A.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

March 1993 2

Philips Semiconductors Product specification

VHF power transistor BLW60C

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T

BE

=0)

CESM
CEO

EBO
C(AV)
CM

= 25 °CP

mb

rf

stg

j

max. 36 V
max. 16 V
max. 4 V
max. 9 A
max. 22 A
max. 100 W

−65 to+ 150 °C

max. 200 °C

CE

(V)

MGP479

2

150

handbook, halfpage

P

rf

(W)

100

50

0

0

I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch

Fig.3 R.F. power dissipation; VCE≤ 16,5 V; f > MHz.

2

10

handbook, halfpage

I

C

(A)

10

1

11010

Th = 70 °C

Fig.2 D.C. SOAR.

Tmb = 25 °C

V

THERMAL RESISTANCE

(dissipation = 40 W; T

=88°C, i.e. Th=70°C)

mb

From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R

ΙΙΙ

ΙΙ

Ι

50

th j-mb(dc)
th j-mb(rf)
th mb-h

derate by 0.52 W/K

0.38 W/K

Th (°C)

= 2,8 K/W
= 2,05 K/W
= 0,45 K/W

MGP480

100

March 1993 3

Philips Semiconductors Product specification

VHF power transistor BLW60C

CHARACTERISTICS

T

=25°C

j

Breakdown voltage

Collector-emitter voltage

=0;IC=50mA V

V

BE

(BR)CES

Collector-emitter voltage

open base; I

= 100 mA V

C

(BR)CEO

Emitter-base voltage

open collector; IE=25mA V

(BR)EBO

Collector cut-off current

=0;VCE=15V I

V

BE

CES

Transient energy

L = 25 mH; f = 50 Hz
open base E > 8ms

−VBE= 1,5 V; RBE=33Ω E > 8ms

D.C. current gain

IC= 4 A; VCE=5V h

D.C. current gain ratio of matched devices

IC= 4 A; VCE=5V h

Collector-emitter saturation voltage

IC= 12,5 A; IB= 2,5 A V

Transition frequency at f = 100 MHz

IC= 4 A; VCE= 12,5 V f
I

= 12,5 A; VCE= 12,5 V f

C

(1)

FE

(1)

FE1/hFE2

(1)

CEsat

(1)

T
T

Collector capacitance at f = 1 MHz

= 0; VCB=15V C

I

E=Ie

c

> 36 V

> 16 V

> 4V

< 25 mA

typ 50

10 to 80

< 1,2

typ 1,5 V

typ 650 MHz
typ 600 MHz

typ 120 pF

< 160 pF

Feedback capacitance at f = 1 MHz

I

= 200 mA; VCE=15V C

C

Collector-stud capacitance

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

March 1993 4

re

C

cs

typ 80 pF
typ 2 pF

Philips Semiconductors Product specification

VHF power transistor BLW60C

75

handbook, halfpage

h

FE

50

25

0

0 5 10 15

typical values Tj = 25 °C

VCE = 12.5 V

5 V

MGP481

IC (A)

Fig.4 DC current gain as a function of collector

current.

300

handbook, halfpage

C

c

(pF)

200

100

0

01020

typ

IE = Ie = 0
f = 1 MHz

VCB (V)

Fig.5 Collector capacitance as a function of

collector-base voltage.

MGP482

750

handbook, full pagewidth

f

T

(MHz)

500

250

0

0510

VCE = 12.5 V

10 V

5 V

15

Fig.6 Transition frequency as a function of collector current.

typical values
f = 100 MHz
Tj = 25 °C

IC (A)

MGP483

20

March 1993 5

Philips Semiconductors Product specification

VHF power transistor BLW60C

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T

=25°C

h

f (MHz) V

(V) PL (W) PS (W) Gp(dB) IC(A) η (%) zi(Ω) ZL(Ω)

CC

175 12,5 45 < 14,2 > 5,0 < 4,8 > 75 1,2 + j1,4 2,6 − j1,2

175 13,5 45 − typ. 6,0 − typ. 75 −−

Test circuit for 175 MHz

handbook, full pagewidth

C6a

R2

MGP484

C6b

C7

50 Ω

C8

50 Ω

C1

C2

+V

L7

L6

C5

L8

CC

C3a

L1

L2

R1

T.U.T.

L4

C3b

L3

L5

C4

Fig.7 Class-B test circuit at f = 175 MHz.

List of components:

C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3a = C3b = 47 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor
C5 = 100 nF polyester capacitor
C6a = C6b = 8,2 pF ceramic capacitor (500 V)
C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
L1 = 1 turn Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 × 5mm
L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm
L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor
L6 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2 × 5 mm
L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2 × 5 mm
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 = 10 Ω (±10%) carbon resistor
R2 = 4,7 Ω (±5%) carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit: Fig.8.

March 1993 6

Philips Semiconductors Product specification

VHF power transistor BLW60C

150

handbook, full pagewidth

72

1888MJK

C1 C2

L8L3

R1

C3a

L2

L1

L4 L5

C3b

C4

C5

L6

C6a

L7

C6b

C7

R2

+V

CC

C8

1888MJK

rivet

MGP485

The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve
as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact
between upper and lower sheets.

Fig.8 Component layout and printed-circuit board for 175 MHz class-B test circuit.

March 1993 7

Philips Semiconductors Product specification

VHF power transistor BLW60C

100

handbook, halfpage

handbook, halfpage

P

Lnom

VSWR = 1

typical values
f = 175 MHz

P

L

(W)

75

50

25

0

010 30

50

(W)

40

30

1 1.1 1.2 1.3

VCC = 12.5 V
VCC = 13.5 V

Th = 25 °C

Th = 70 °C

Fig.9

20

VSWR =

5

10

20
50

PS (W)

P

P

Snom

V

CC

V

CCnom

MGP486

MGP488

S

MGP487

10

handbook, halfpage

G

p

(dB)

5

0

10 30 50

typical values
f = 175 MHz
Th = 25 °C

η

G

p

VCC = 12.5 V
VCC = 13.5 V

PL (W)

100

η

(%)

50

0

Fig.10

Conditions for R.F. SOAR
f = 175 MHz

Th=70°C
R
V
PS=P

= 0,45 K/W

th mb-h

= 12,5 V or 13,5 V

CCnom

Snom

at V

and VSWR = 1

CCnom

measured in circuit of Fig.7.
The transistor has been developed for use with

unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.

The graph applies to the situation in which the drive
(PS/P

) increases linearly with supply over-voltage

Snom

ratio.

Fig.11

March 1993 8

Philips Semiconductors Product specification

VHF power transistor BLW60C

handbook, halfpage

2

ri, x

i

(Ω)

0

−2

−4

0 100 200

Typical values; VCE= 12,5 V; PL=45W;
class-B operation; T

h

=25°C.

r

i

x

i

f (MHz)

Fig.12 Input impedance (series components).

MGP489

4

handbook, halfpage

RL, X

L

(Ω)

R

2

0

−2
0 100 200

Typical values; VCE= 12,5 V; PL=45W;
class-B operation; T

=25°C.

h

L

X

L

f (MHz)

Fig.13 Load impedance (series components).

MGP490

20

handbook, halfpage

G

p

(dB)

10

0

0 100 200

Typical values; VCE= 12,5 V; PL=45W;
class-B operation; T

=25°C.

h

f (MHz)

MGP491

Fig.14

March 1993 9

Philips Semiconductors Product specification

VHF power transistor BLW60C

R.F. performance in s.s.b. class-AB operation
VCE= 12,5 V; Thup to 25 °C; R
f1= 28,000 MHz; f2= 28,001 MHz

th mb-h

≤ 0,45 K/W

OUTPUT POWER

W

G
dB

p

η

dt

%

dB

d

3

(1)

dB

d

5

(1)

I

C(ZS)

mA

3 to 30 (P.E.P.) typ 19,5 typ 35 typ −33 typ −36 25

Note

1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.

handbook, full pagewidth

RS =
50 Ω

R4

R3

TR1

C1

C2

C16

C15

C3

R5

TR2

R6

L1

C4

+VB = 12.5 V

bias

T.U.T.

R1L2

C5

C9

C7

C8

R2

L4

C6

L3 C12

C10

C11

C13 C14

L5

RL =
50 Ω

+VB = 12.5 V

MGP492

Fig.15 S.S.B. class-AB test circuit.

March 1993 10

Philips Semiconductors Product specification

VHF power transistor BLW60C

List of components:

TR1 = TR2 = BD137
C1 = 100 pF air dielectric trimmer (single insulated rotor type)
C2 = 27 pF ceramic capacitor
C3 = 180 pF ceramic capacitor
C4 = 100 pF air dielectric trimmer (single non-insulated rotor type)
C5 = C7 = 3,9 nF polyester capacitor
C6 = 2 × 270 pF polystyrene capacitors in parallel
C8 = C15 = C16 = 100 nF polyester capacitor
C9 = 2,2 µF moulded metallized polyester capacitor
C10 = 2 × 385 pF film dielectric trimmer
C11 = 68 pF ceramic capacitor
C12 = 2 x 82 pF ceramic capacitors in parallel
C13 = 47 pF ceramic capacitor
C14 = 385 pF film dielectric trimmer
L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9 mm; length 6,1 mm; leads 2 × 5 mm
L2 = L5 = Ferroxcube choke coil (cat. no. 4312 020 36640)
L3 = 68 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 8,3 mm; leads 2 × 5 mm
L4 = 96 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 7,6 mm; leads 2 × 5 mm
R1 = 27 Ω (± 5%) carbon resistor
R2 = 4,7 Ω (±5%) carbon resistor
R3 = 1,5 kΩ (±5%) carbon resistor
R4 = 10 Ω wirewound potentiometer (3 W)
R5 = 47 Ω wirewound resistor (5,5 W)
R6 = 150 Ω (±5%) carbon resistor

Measuring conditions for Figs 16 and 17:

V

= 12,5 V

CC

f

= 28,000 MHz

1

f

= 28,001 MHz

2

=25°C

T

h

R
I

C(ZS)

th mb-h

=25mA

≤ 0,45 ° K/W

typical values

March 1993 11

Measuring conditions for Figs 18 and 19:

V

= 13,5 V

CC

f

= 28,000 MHz

1

f

= 28,001 MHz

2

=25°C

T

h

R
I

C(ZS)

th mb-h

≤ 0,45 ° K/W

=25mA

typical values

Philips Semiconductors Product specification

VHF power transistor BLW60C

−20

handbook, halfpage

d3, d

5

(dB)

−40

−60

02040

intermodulation distortion versus
output power *

Fig.16

d

d

P.E.P. (W)

3

5

MGP493

40

handbook, halfpage

double-tone efficiency versus
output power

η

dt

(%)

20

0

02040

MGP494

typ

P.E.P. (W)

Fig.17

−20

handbook, halfpage

d3, d

intermodulation distortion versus
output power *

5

(dB)

−40

−60

02040

Fig.18

P.E.P. (W)

MGP495

d

3

d

5

40

handbook, halfpage

double-tone efficiency versus
output power

η

dt

(%)

20

0

02040

typ

P.E.P. (W)

Fig.19

MGP496

* Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.

March 1993 12

Philips Semiconductors Product specification

VHF power transistor BLW60C

f (MHz)

MGP497

2

10

handbook, halfpage

r

i

(Ω)

7.5

5

2.5

0

11010

input impedance (series components)
versus frequency

30

handbook, halfpage

G

p

(dB)

20

10

11010

Fig.20

S.S.B. class-AB operation

Conditions for Figs 20 and 21:

V

= 12,5 V VCC= 13,5 V

CC

= 30 W (P.E.P.) PL= 35 W (P.E.P.)

P

L

T

=25°CT

h

R
I

C(ZS)

Z

≤ 0,45 K/W R

th mb-h

=25mA I

= 1,9 Ω ZL= 1,9 Ω

L

=25°C

h

≤ 0,45 K/W

th mb-h

=25mA

C(ZS)

The typical curves (both conditions) hold for an unneutralized amplifier.

Fig.21

x

i

r

i

f (MHz)

MGP498

5

x

i

(Ω)

2.5

0

−2.5

−5

2

March 1993 13

Philips Semiconductors Product specification

VHF power transistor BLW60C

PACKAGE OUTLINE

Studded ceramic package; 4 leads SOT120A

D

A

Q

c

D

N

1

N

N

3

L

H

1

1

D

2

H
b

4

A

w

A

M

1

X

3

2

M

M

1

detail X

W

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.90

5.48

c

Db

9.73

0.18

9.47

0.14

0.383

0.007

0.373

0.004

IEC JEDEC EIAJ

D

1

8.39

8.12

0.330

0.320

D

2

9.66

9.39

0.380

0.370

27.44

9.00

25.78

8.00

1.080

0.354

1.015

0.315

REFERENCES

L

MH

3.41

2.92

0.134

0.065

0.115

0.055

UNIT

mm

inches

A W

5.97

4.74

0.232

0.283

0.216

0.248

OUTLINE

VERSION

SOT120A

March 1993 14

M

1.66

1.39

8-32

UNC

w

0.38

0.015

1

ISSUE DATE

97-06-28

N

N

1

12.83

11.17

0.505

0.440

1

1.60

0.00

0.063

0.000

N

3.31

2.54

0.130

0.100

3

Q

4.35

3.98

0.171

0.157

EUROPEAN

PROJECTION

Philips Semiconductors Product specification

VHF power transistor BLW60C

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

March 1993 15