Datasheet BLW50F Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLW50F

HF/VHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

HF/VHF power transistor BLW50F

DESCRIPTION

N-P-N silicon planar epitaxial
transistor primarily intended for use in

It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.

class-A, AB and B operated, industrial
and military transmitters in the h.f.
and v.h.f. band. Resistance
stabilization provides protection
against device damage at severe load
mismatch conditions. Matched
hFEgroups are available on request.

QUICK REFERENCE DATA

R.F. performance

MODE OF OPERATION V

CE

V

f

MHz

P

W

L

G

p

dB

η

dt

%

I

I

C

C(ZS)

A

mA

d

dB

3

s.s.b. (class-A) 45 1,6 - 28 0 - 16 (P.E.P.) > 19,5 − 1,2 −<−40 70

(1)

s.s.b. (class-AB) 50 1,6 - 28 10 - 65 (P.E.P.) typ. 18 typ. 45

1,45 50 typ. −30 25

Note

1. At 65W P.E.P.

T
°C

h

PIN CONFIGURATION

PINNING - SOT123

PIN DESCRIPTION

lfpage

1

23

4

handbook, halfpage

MSB057

MBB012

c

b

e

1 collector
2 emitter
3 base
4 emitter

Fig.1 Simplified outline and symbol.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

HF/VHF power transistor BLW50F

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
D.C. and r.f. (f > 1 MHz) power dissipation; T
Storage temperature T
Operating junction temperature T

BE

= 0)

CESM
CEO

EBO
C(AV)
CM

= 25 °CP

mb

tot;Prf

stg

j

max. 110 V
max. 55 V
max. 4 V
max. 2,5 A
max. 7,5 A
max. 94 W

−65 to + 150 °C

max. 200 °C

10

handbook, halfpage

I

C

(A)

1

−1

10

1 10 10

Th = 70 °C

VCE (V)

Fig.2 D.C. SOAR.

MGP466

Tmb = 25 °C

150

handbook, halfpage

P

rf

(W)

100

ΙΙ

50

Ι

2

0

0

I Continuous d.c. and r.f. operation
II Short-time operation during mismatch

50

Th (°C)

MGP467

100

Fig.3 Power derating curves vs. temperature.

THERMAL RESISTANCE

(dissipation = 54 W; T

=86°C, i.e. Th=70°C)

mb

From junction to mounting base

(d.c. and r.f. dissipation) R

From mounting base to heatsink R

August 1986 3

th j-mb
th mb-h

= 2,1 K/W
= 0,3 K/W

Philips Semiconductors Product specification

HF/VHF power transistor BLW50F

CHARACTERISTICS

T

=25°C

j

Collector-emitter breakdown voltage

V

= 0; IC= 25 mA V

BE

Collector-emitter breakdown voltage

open base; IC= 100 mA V

Emitter-base breakdown voltage

open collector; IE= 10 mA V

Collector cut-off current

VBE= 0; VCE= 55 V I

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E
R

=10Ω E

BE

D.C. current gain

(1)

IC= 1,2 A; VCE=5 V h

D.C. current gain ratio of matched devices

(1)

IC= 1,2 A; VCE=5 V h
Collector-emitter saturation voltage

(1)

IC= 3,0 A; IB= 0,6 A V

Transition frequency at f = 100 MHz

(1)

−IE= 1,2 A; VCB= 45 V f
= 4,0 A; VCB= 45 V f

−I

E

Collector capacitance at f = 1 MHz

IE=Ie= 0; VCB= 45 V C

Feedback capacitance at f = 1 MHz

I

= 50 mA; VCE= 45 V C

C

Collector-flange capacitance C

(BR) CES

(BR) CEO

(BR)EBO

CES

SBO
SBR

FE

FE1/hFE2

CEsat

T
T

c

re
cf

> 110 V

> 55 V

> 4V

< 10 mA

> 8mJ
> 8mJ

typ. 25

15 to 100

< 1,2

typ. 1,2 V

typ. 490 MHz
typ. 540 MHz

typ. 53 pF

typ. 35 pF
typ. 2 pF

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

August 1986 4

Philips Semiconductors Product specification

HF/VHF power transistor BLW50F

10

handbook, halfpage

I

C

(A)

1

−1

10

−2

10

typ

1

VBE (V)

Fig.4 VCE= 40 V; Tmb=25°C.

MGP468

40

handbook, halfpage

h

FE

30

20

10

1.50 0.5

0

0123

VCE = 45 V

5 V

MGP469

IC (A)

Fig.5 Typical values; Tj=25°C.

600

handbook, halfpage

f

T

(MHz)

400

200

0

0510

VCB = 45 V

10 V

−IE (A)

MGP470

Fig.6 Typical values; f = 100 MHz; Tj=25°C.

August 1986 5

300

handbook, halfpage

C

c

(pF)

200

100

0

02550

Fig.7 IE=Ie= 0; f = 1 MHz; Tj= 25 °C.

MGP471

typ

VCB (V)

Philips Semiconductors Product specification

HF/VHF power transistor BLW50F

APPLICATION INFORMATION

R.F. performance in s.s.b. class-A operation (linear power amplifier)
V

= 45 V; f1= 28,000 MHz; f2= 28,001 MHz

CE

OUTPUT POWER

W

G
dB

p

I

C

A

d

3

dB

(1)

> 16 (P.E.P.) > 19,5 1,2 −40 <−40 70
typ. 17 (P.E.P.) typ. 20,5 1,2 −40 <−40 70

d

5

dB

(1)

T
°C

h

+V

R3

CC

C9

50 Ω

C8

MGP472

handbook, full pagewidth

50 Ω

C1

C2

L4

R2

T.U.T.

L2

C4C3

L3

C6

C5

C7

L1

R1

+V

BB

Fig.8 Test circuit; s.s.b. class-A.

List of components in Fig.8:

C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = 22 nF ceramic capacitor (63 V)
C4 = 4,7 µF/16 V electrolytic capacitor
C5 = 1 µF/75 V solid tantalum capacitor
C6 = C7 = 47 nF polyester capacitor (100 V)
C8 = 68 pF ceramic capacitor (500 V)
C9 = 3,9 nF ceramic capacitor
L1 = 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia 9,0 mm; leads 2 × 5 mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 1,05 µH; 15 turns enamelled Cu wire (1,0 mm); int. dia. 10 mm; length 17,4 mm; leads 2 × 5 mm
L4 = 162 nH; 6 turns enamelled Cu wire (1,0 mm); int. dia. 7,0 mm; length 11,6 mm; leads 2 × 5 mm
R1 = 1,6 Ω; parallel connection of 3 × 4,7 Ω carbon resistors (± 5%; 0,125 W)
R2 = 47 Ω carbon resistor (± 5%; 0,25 W)
R3 = 4,7 Ω carbon resistor (± 5%; 0,25 W)

Note

1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.

August 1986 6

Philips Semiconductors Product specification

HF/VHF power transistor BLW50F

−20

handbook, full pagewidth

d

3

(dB)

−30
IC = 0.8 A 1.0 A 1.2 A

−40

−50

−60

010

20

P.E.P. (W)

Fig.9 Intermodulation distortion (see note on previous page) as a function of output power. Typical values;

VCE= 45 V; f1= 28,000 MHz; f2= 28,001 MHz; Th= 70 °C.

MGP473

30

August 1986 7

Philips Semiconductors Product specification

HF/VHF power transistor BLW50F

R.F. performance in s.s.b. class-AB operation (linear power amplifier)
V

= 50 V; f1= 28,000 MHz; f2= 28,001 MHz

CE

OUTPUT POWER G

p

ηdt(%) IC(A) d

(1)

3

W dB AT 65 W P.E.P. dB dB mA °C

10 to 65 (P.E.P.) typ.18 typ. 45 typ. 1,45 typ. −30 <−30 50 25

(1)

d

5

I

C(ZS)

T

h

C7

C9

50 Ω

+V

CC

MGP474

handbook, full pagewidth

C1

50 Ω

compensated bias

C2

temperature

(Ri < 0.1 Ω)

L4

R2

T.U.T.

L2

L3

C4

C5 C6 C8

L1

R1

C3

Fig.10 Test circuit; s.s.b. class-AB.

List of components:

C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = C5 = C6 = 220 nF polyester capacitor
C4 = 120 pF ceramic capacitor (500 V)
C7 = 150 pF ceramic capacitor (500 V)
C8 = 47µF/63 V electrolytic capacitor
C9 = 3,9 nF ceramic capacitor
L1 = 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia 7,0 mm; leads 2 × 5 mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat.no. 4312 020 36640)
L3 = 9 turns enamelled Cu wire (1,0 mm); int. dia. 10 mm; length 14,5 mm; leads 2 × 5 mm
L4 = 6 turns enamelled Cu wire (1,0 mm); int. dia. 6,5 mm; length 11,0 mm; leads 2 × 5 mm
R1 = 2,4 Ω; parallel connection of 2 × 4,7 Ω carbon resistors
R2 = 39 Ω carbon resistor

Note

1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.

August 1986 8

Philips Semiconductors Product specification

HF/VHF power transistor BLW50F

−20

handbook, halfpage

d3, d

5

(dB)

−30

−40

0255075

VCE= 50 V; I

= 28,001 MHz; Th=25°C; typical values.

f

2

d

3

d

5

= 50 mA; f1= 28,000 MHz;

C(ZS)

MGP475

P.E.P. (W)

Fig.11 Intermodulation distortion as a function of

output power

(1)

.

50

handbook, halfpage

η

dt

(%)

25

0

0255075

VCE= 50 V; I

= 28,001 MHz; Th=25°C; typical values.

f

2

G

p

η

dt

= 50 mA; f1= 28,000 MHz;

C(ZS)

MGP476

P.E.P. (W)

Fig.12 Double-tone efficiency and power gain as a

function of output power.

20

(dB)

10

0

G

p

Ruggedness in s.s.b. operation

The BLW50F is capable of withstanding full load mismatch
(VSWR = 50 through all phases) up to 45 W (P.E.P.) under
the following conditions:

VCE= 50 V; f1= 28,000 MHz; f2= 28,001 MHz; Th= 70°C;
R

th mb-h

= 0,3 K/W.

August 1986 9

Philips Semiconductors Product specification

HF/VHF power transistor BLW50F

30

handbook, halfpage

G

p

(dB)

20

10

0

11010

VCE= 50 V; I

=25°C; ZL= 16 Ω.

T

h

= 50 mA; PL= 60 W;

C(ZS)

f (MHz)

Fig.13 Power gain as a function of frequency.

MGP477

2

20

handbook, halfpage

r

, x

i

i

(Ω)

10

0

−10
11010

VCE= 50 V; I

=25°C; ZL= 16 Ω.

T

h

= 50 mA; PL= 60 W;

C(ZS)

r

i

x

i

MGP478

f (MHz)

Fig.14 Input impedance (series components) as

a function of frequency.

2

Figs 13 and 14 are typical curves and hold for an
unneutralized amplifier in s.s.b. class-AB operation.

August 1986 10

Philips Semiconductors Product specification

HF/VHF power transistor BLW50F

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

D

A

F

H

α

1

H

q

U

1

L

C

B

w

M

C

2

b

43

p

2

0 5 10 mm

scale

A

U

2

w

M

AB

1

c

U

3

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.82

5.56

c

Db

9.73

0.18

9.47

0.10

0.397

0.383

0.007

0.004

IEC JEDEC EIAJ

0.373

0.371

D

9.63

9.42

F

1

2.72

20.71

2.31

19.93

0.815

0.107

0.091

0.221

0.785

0.203

REFERENCES

5.61

5.16

pH

3.33

3.04

0.131

0.120

Q

4.63

4.11

0.182

0.162

q

18.42

0.725

U

1

25.15

24.38

0.99

0.96

U2U

6.61

6.09

0.26

0.24

PROJECTION

w

3

9.78

9.39

0.385

0.370

EUROPEAN

1

UNIT

inches

A

7.47

mm

6.37

0.229

0.294

0.219

0.251

OUTLINE

VERSION

SOT123A 97-06-28

August 1986 11

w

2

1.020.51

0.040.02

ISSUE DATE

αL

45°

Philips Semiconductors Product specification

HF/VHF power transistor BLW50F

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

August 1986 12