Datasheet BLW33 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLW33

UHF linear power transistor

Product specification

August 1986

Philips Semiconductors Product specification

UHF linear power transistor BLW33

DESCRIPTION

N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers for television
transmitters and transposers. The

excellent d.c. dissipation
properties for class-A operation are

area. The combination of optimum
thermal design and the application of

gold sandwich metallization

realizes excellent reliability
properties.

1

The transistor has a

⁄4" capstan

envelope with ceramic cap.
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal

QUICK REFERENCE DATA

R.F. performance

MODE OF OPERATION f

vision

MHz

V

CE

V

I

C

mA

T
°C

h

(1)

d

im

P

dB

o sync

W

(1)

G
dB

p

class-A; linear amplifier 860 25 300 70 −60 > 1,0 > 10,0

860 25 300 25 −60 typ. 1,15 typ. 10,5

Note

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal−16 dB), zero dB corresponds to

peak sync level.

PIN CONFIGURATION

PINNING - SOT122A.

PIN DESCRIPTION

1 collector
2 emitter

Top view

4

31

2

MBK187

3 base
4 emitter

handbook, halfpage

Fig.1 Simplified outline. SOT122A.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

UHF linear power transistor BLW33

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage

(peak value); V

open base V
Emitter-base voltage (open collector) V
Collector current

d.c. or average I

(peak value); f > 1 MHz I
Total power dissipation up to T
Storage temperature T
Operating junction temperature T

=0 V

BE

=25°CP

mb

CESM
CEO
EBO

C
CM

tot
stg
j

max. 50 V
max. 30 V
max. 4 V

max. 1,25 A
max. 1,9 A
max. 19,3 W

−65 to +150 °C

max. 200 °C

10

handbook, halfpage

I

C

(A)

(1)

1

−1

10

11010

(1) Second breakdown limit (independent of temperature).

Th = 70 °C

Tmb = 25 °C

VCE (V)

Fig.2 D.C. SOAR.

THERMAL RESISTANCE (see Fig.4)

MGP442

2

20

handbook, halfpage

P

tot

(W)

15

10

5

0

0 50 100

Th (°C)

Fig.3 Power derating curve vs. temperature.

MGP443

From junction to mounting base

(dissipation = 7,5 W; Tmb= 74,5 °C; i.e. Th=70°C) R
From mounting base to heatsink R

August 1986 3

th j-mb
th mb-h

= 10,1 K/W
= 0,6 K/W

Philips Semiconductors Product specification

UHF linear power transistor BLW33

15

handbook, full pagewidth

R

th j-h

(K/W)

10

5

0 5 10 15 20

100 °C

125 °C

Th = 125 °C

150 °C

100 °C

75 °C

50 °C

25 °C

Tj = 200 °C

175 °C

0 °C

P

MGP444

(W)

tot

Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink

and junction temperature as parameters. (R

th mb-h

= 0,6 K/W.)

25

Example

Nominal class-A operation: V

Fig.4 shows: R

Typical device: R

T

T

th j-h

j

th j-h

j

= 25 V; IC= 300 mA; Th=70°C.

CE

max. 10,7 K/W
max. 150 °C
typ. 8,25 K/W
typ. 132 °C

August 1986 4

Philips Semiconductors Product specification

UHF linear power transistor BLW33

CHARACTERISTICS

T

=25°C unless otherwise specified

j

Collector-emitter breakdown voltage

V

= 0; IC= 4 mA V

BE

open base; I

= 30 mA V

C

(BR)CES
(BR)CEO

Emitter-base breakdown voltage

open collector; I

= 2 mA V

E

(BR)EBO

Collector cut-off current

VBE= 0; VCE= 30 V I

= 0; VCE= 30 V; Tj= 175 °CI

V

BE

CES
CES

D.C. current gain

I

= 300 mA; VCE= 25 V h

C

FE

> 50 V
> 30 V

> 4V

< 1,0 mA
< 2,5 mA

>

typ.2040

IC= 300 mA; VCE= 25 V; Tj= 175 °Ch
Collector-emitter saturation voltage

(1)

IC= 600 mA; IB= 60 mA V
Transition frequency at f = 500 MHz

(2)

−IE= 300 mA; VCB= 25 V f

−I

= 600 mA; VCB= 25 V f

E

FE

CEsat

T
T

< 120

typ. 450 mV

typ. 3,4 GHz
typ. 3,1 GHz

Collector capacitance at f = 1 MHz

I

= 0; VCB= 25 V C

E=Ie

c

typ. 6,6 pF

Feedback capacitance at f = 1 MHz

IC= 20 mA; VCE= 25 V C
Collector-stud capacitance C

re
cs

typ. 3,5 pF
typ. 1,2 pF

Notes

1. Measured under pulse conditions: t

≤ 300 µs; δ≤0,02.

p

2. Measured under pulse conditions: tp≤ 50 µs; δ≤0,01.

August 1986 5

Philips Semiconductors Product specification

UHF linear power transistor BLW33

50

handbook, halfpage

h

FE

25

0

0 0.5 1 1.5

MGP445

VCE = 25 V

5 V

IC (A)

Fig.5 Typical values; Tj=25°C.

25

handbook, halfpage

C

c

(pF)

20

15

10

5

0

0102030

Fig.6 IE=Ie= 0; f = 1 MHz; Tj=25°C.

MGP446

typ

VCB (V)

handbook, full pagewidth

4

f

T

(GHz)

3

2

1

0

0 0.5

typ

Fig.7 VCB= 25 V; f = 500 MHz; Tj=25°C.

MGP447

1

−IE (A)

1.5

August 1986 6

Philips Semiconductors Product specification

UHF linear power transistor BLW33

APPLICATION INFORMATION

f

(MHz) VCE(V) IC(mA) Th(°C) dim(dB)

vision

(1)

P

o sync

(W)

(1)

GP (dB)

860 25 300 70 −60 > 1,0 > 10
860 25 300 70 −60 typ. 1,07 typ. 10,5
860 25 300 25 −60 typ. 1,15 typ. 10,5

Note

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.

handbook, full pagewidth

50 Ω

C1 C3

L1 L2 L3

C9C2C10 C11

+V

Fig.8 Test circuit at f

BB

T.U.T.

L5

C4L4

C5 C8

L6

+V

C12 C13 C14 C15

CC

= 860 MHz.

vision

C6

L8C7L7

50 Ω

MGP448

List of components:

C1 = C3 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 05003)
C2 = C6 = C8 = 1 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) placed 24 mm, 8 mm

and 46 mm respectively from transistor edge
C4 = C5 = 4,3 pF multilayer ceramic chip capacitor (ATC 100A-4R3-C-PX-50)
C7 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002)
C9 = C12 = 1 nF chip capacitor
C10 = 100 nF polyester capacitor
C11 = C13 = 470 nF polyester capacitor
C14 = 10 nF polyester capacitor
C15 = 3,3 µF/40 F solid aluminium electrolytic capacitor
L1 = stripline (5,2 mm × 4,5 mm)
L2 = stripline (13,2 mm × 4,5 mm)
L3 = stripline (15,0 mm × 4,5 mm)
L4 = micro choke 0,47 µH (cat. no. 4322 057 04770)
L5 = stripline (see Fig.9 printed-circuit board layout)
L6 = 4 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2 × 4 mm
L7 = stripline (37,0 mm × 4,5 mm)
L8 = stripline (13,5 mm × 4,5 mm)

August 1986 7

Philips Semiconductors Product specification

UHF linear power transistor BLW33

L1; L2; L3; L5; L7 and L8 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric
(εr= 2,74); thickness 1/16".

For bias circuit see Fig.10.

handbook, full pagewidth

L1

C1 C3

C11

L2

C2

C10

114.5

46

+V

CC

C14

C15

C13

L7

L8

C7

C8

+V

BB

C9

L4

C4

L3

C5

C12

L6

L5

C6

MGP449

Fig.9 Component layout and printed-circuit board for 860 MHz test circuit.

The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.

August 1986 8

Philips Semiconductors Product specification

UHF linear power transistor BLW33

D2

R1

D1

R2

C2C1

R3

C3

R5R4

C4

R6

TR1

Fig.10 Bias circuit for class-A amplifier at

f

= 860 MHz.

vision

−50

handbook, full pagewidth

d

im

(dB)

R7

R8

R9

MGP437

+V

+V

+V

List of components:

s

C1 = 100 pF ceramic capacitor
C2 = C3 = 100 nF polyester capacitor

CC

C4 = 10 µF/25 V solid aluminium electrolytic capacitor
R1 = 150 Ω carbon resistor (0,25 W)
R2 = 100 Ω preset potentiometer (0,1 W)
R3 = 82 Ω carbon resistor (0,25 W)

BB

R4 = R5 = 2,2 kΩ carbon resistor (0,25 W)
R6 = 6 Ω; parallel connection of 2 × 12 Ω

carbon resistors (0,5 W each)

R7 = R8 = 820 Ω carbon resistor (0,25 W)

0

R9 = 33 Ω carbon resistor (0,25 W)
D1 = BZY88-C3V3
D2 = BY206
TR1 = BD136

MGP450

30

d

cm

d

im

(%)

−55

−60

−65

01 3

Fig.11 Intermodulation distortion (dim)

(1.)

and cross-modulation distortion (dcm)

Typical values; VCE= 25 V; IC= 300 mA; f

d

cm

2

(2.)

as a function of output power.

= 860 MHz; − − − Th=25°C;  Th=70°C.

vision

P

o sync

(W)

20

10

0

4

Information for wideband application from 470 to 860 MHz available on request.

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
Intermodulation distortion of input signal ≤−75 dB.

2. Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (d

) is the voltage variation (%) of sound carrier when vision carrier is switched from

cm

0 dB to −20 dB.

August 1986 9

Philips Semiconductors Product specification

UHF linear power transistor BLW33

handbook, halfpage

5

ri, x

i

(Ω)

0

−5

−10

−15

10 10

Typical values; VCE= 25 V;

= 300 mA; Th=70°C.

I

C

r

i

x

i

2

f (MHz)

Fig.12 Input impedance (series components).

MGP451

f (MHz)

MGP452

3

10

50

handbook, halfpage

RL, X

L

(Ω)

25

3

10

0

10 10

Typical values; VCE= 25 V;

= 300 mA; Th=70°C.

I

C

R

L

X

L

2

Fig.13 Load impedance (series components).

35

handbook, halfpage

G

p

(dB)

25

15

5

10 10

Typical values; VCE= 25 V;

= 300 mA; Th=70°C.

I

C

2

Fig.14

f (MHz)

MGP453

Ruggedness

The BLW33 is capable of withstanding a load mismatch
(VSWR = 50 through all phases) under the following
conditions:

f = 860 MHz; VCE= 25 V; IC= 300 mA;
Th=70°C and PL= 2 W.

3

10

August 1986 10

Philips Semiconductors Product specification

UHF linear power transistor BLW33

PACKAGE OUTLINE

Studded ceramic package; 4 leads SOT122A

D

A

Q

N

1

N

N

3

L

H

D

1

D

2

H
b

4

ceramic
BeO

metal

A

w

X

c

A

M

1

M

M

1

detail X

W

α

3

1

2

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

OUTLINE

VERSION

SOT122A

A

5.97

4.74

b

5.85

5.58

D

6.48

6.22

D

1

2

27.56

7.24

25.78

6.93

REFERENCES

cM

D

0.18

7.50

0.14

7.23

IEC JEDEC EIAJ

L

H

9.91

3.18

9.14

2.66

August 1986 11

N

M

1

1.66

1.39

NN

11.82

11.04

1

max.

1.02

Q

3

3.38

3.86

2.74

2.92

EUROPEAN

PROJECTION

W

8-32
UNC

ISSUE DATE

w

1

0.381

97-04-18

α

90°

Philips Semiconductors Product specification

UHF linear power transistor BLW33

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

August 1986 12