Datasheet BLW29 Datasheet (Philips)

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DISCRETE SEMICONDUCTORS

DATA SH EET

BLW29

VHF power transistor

Product speciﬁcation

August 1986

Page 2

Philips Semiconductors Product speciﬁcation

VHF power transistor BLW29

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power handling capability, the transistor is especially suited for design of wide-band and semi-wide-band v.h.f. amplifiers.

the chain can deliver 15 W with a maximum drive power of 120 mW at 175 MHz. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.

It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.

Together with a BFQ42 driver stage,

QUICK REFERENCE DATA

R.F. performance up to T

MODE OF OPERATION V

= 25 °C

MHz

Ω

c.w. class-B 13,5 175 15 > 10 > 60 1,3 + j0,68 180 − j54

c.w. class-B 12,5 175 15 typ. 10, 5 typ. 67 −−

PIN CONFIGURATION

PINNING - SOT120

PIN DESCRIPTION

alfpage

1 collector 2 emitter 3 base

handbook, halfpage

4 emitter

MBB012

MSB056

Fig.1 Simplified outline and symbol.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

August 1986 2

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Philips Semiconductors Product speciﬁcation

VHF power transistor BLW29

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V Collector-emitter voltage (open base) V Emitter-base voltage (open collector) V Collector current (average) I Collector current (peak value); f > 1 MHz I R.F. power dissipation (f > 1 MHz); T Storage temperature T Operating junction temperature T

= 0)

CESM CEO

EBO C(AV) CM

= 25 °CP

stg

max. 36 V max. 18 V max. 4 V max. 2,75 A max. 8 A max. 53 W

−65 to + 150 °C

max. 200 °C

handbook, halfpage

(A)

−1

11010

Th = 70 °C

Tmb = 25 °C

VCE (V)

MGP414

handbook, halfpage

(W)

Fig.2 D.C. SOAR.

THERMAL RESISTANCE

(dissipation = 15 W; T

=77°C, i.e. Th= 70 °C)

From junction to mounting base (d.c. dissipation) R From junction to mounting base (r.f. dissipation) R From mounting base to heatsink R

MGP415

short-time operation during mismatch

continuous r.f. operation derate by

continuous d.c. operation derate by 0.25 W/K

0 50 100

0.3 W/K

Th (°C)

Fig.3 R.F. power dissipation;

VCE≤ 16,5 V; f ≥ 1 MHz.

th j-mb(dc) th j-mb(rf) th mb-h

= 3,7 K/W = 3,05 K/W = 0,45 K/W

August 1986 3

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Philips Semiconductors Product speciﬁcation

VHF power transistor BLW29

CHARACTERISTICS

=25°C

Collector-emitter breakdown voltage

= 0; IC= 15 mA V

Collector-emitter breakdown voltage

open base; IC= 100 mA V

Emitter-base breakdown voltage

open collector; IE= 5 mA V

Collector cut-off current

VBE= 0; VCE= 18 V I

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E R

=10Ω E

D.C. current gain

(1)

IC= 1,75 A; VCE=5 V h

Collector-emitter saturation voltage

(1)

IC= 5 A; IB=1 A V

Transition frequency at f = 100 MHz

(1)

−IE= 1,75 A; VCB= 13,5 V f

−I

= 5 A; VCB= 13,5 V f

Collector capacitance at f = 1 MHz

IE=Ie=0;VCB= 13,5 V C

Feedback capacitance at f = 1 MHz

IC= 100 mA; VCE= 13,5 V C

Collector-stud capacitance C

(BR) CES

(BR)CEO

(BR)EBO

CES

SBO SBR

CEsat

T T

re cs

> 36 V

> 18 V

> 4V

< 5mA

> 4mJ > 4mJ

typ. 40

10 to 80

typ. 1,5 V

typ. 900 MHz typ. 825 MHz

typ. 43 pF

typ. 27 pF typ. 2 pF

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

August 1986 4

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Philips Semiconductors Product speciﬁcation

VHF power transistor BLW29

handbook, halfpage

0510

VCE = 13.5 V

5 V

IC (A)

Fig.4 Typical values; Tj=25°C.

MGP416

150

handbook, halfpage

(pF)

100

01020

Fig.5 IE=Ie= 0; f = 1 MHz; Tj= 25 °C.

MGP417

typ

VCB (V)

1500

handbook, full pagewidth

(MHz)

1000

500

02 6

typ

Fig.6 VCB = 13,5 V; f = 100 MHz; Tj= 25 °C.

MGP418

810

−IE (A)

August 1986 5

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Philips Semiconductors Product speciﬁcation

VHF power transistor BLW29

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T

= 25 °C

f (MHz) V

(V) PL(W) PS(W) Gp(dB) IC(A) η (%) zi(Ω) YL(mS)

175 13,5 15 < 1,5 > 10 < 1,85 > 60 1,3 + j0,68 180 − j54

175 12,5 15 typ. 1,34 typ. 10,5 typ. 1,8 typ. 67 −−

handbook, full pagewidth

50 Ω

C3a

T.U.T.

C3b

50 Ω

MGP419

Fig.7 Test circuit; c.w. class-B.

List of components:

C1 = 2,5 to 20 pF ﬁlm dielectric trimmer (cat. no. 2222 809 07004) C2 = C6 = C7 = 4 to 40 pF ﬁlm dielectric trimmer (cat. no. 2222 809 07008) C3a = C3b = 47 pF ceramic capacitor (500 V) C4 = 1 nF ceramic capacitor C5 = 100 nF polyester capacitor L1 =

⁄2turn Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 × 5 mm

L2 = L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = L4 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor L5 = 4

⁄2turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 × 5 mm

L7 = 2 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 × 5 mm L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy ﬁbre-glass dielectric, thickness 1/16". R1 = R2 = 10 Ω carbon resistor

Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8.

August 1986 6

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Philips Semiconductors Product speciﬁcation

VHF power transistor BLW29

150

handbook, full pagewidth

C1 C2 L1

strip

C3a

L3 L4

C3b

rivet

C5 R2

MGP420

Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.

The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.

August 1986 7

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Philips Semiconductors Product speciﬁcation

VHF power transistor BLW29

handbook, halfpage

(W)

024

 VCE= 13,5 V;

− − − V

(VSWR = 1)

= 12, 5 V

handbook, halfpage

Lnom

(W)

MGP421

Th = 25 °C

70 °C

PS (W)

Fig.9 Typical values; f = 175 MHz.

VSWR = 5

MGP423

MGP422

25 °C

125

(%)

100

handbook, halfpage

(dB)

0102030

 VCE= 13,5 V;

− − − V

= 12, 5 V

Th = 25 °C

Th = 70 °C

70 °C

PL (W)

Fig.10 Typical values; f = 175 MHz.

The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter.

1.2

20 50

Snom V

CEnom

Th=70°C; R

= P

Snom

1 1.1 1.3

th mb-h

at V

= 0,45 K/W; V

and VSWR = 1

CEnom

= 13,5 V or 12,5 V;

CEnom

Fig.11 R.F. SOAR (short-time operation during

mismatch); f = 175 MHz;

August 1986 8

The graph applies to the situation in which the drive (PS/P

) increases linearly with supply over-voltage

Snom

ratio.

OPERATING NOTE

Below 70 MHz a base-emitter resistor of 10 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only.

Page 9

Philips Semiconductors Product speciﬁcation

VHF power transistor BLW29

handbook, halfpage

i, xi

(Ω)

−5 0 250 500

Typical values; VCE= 13,5 V; PL= 15 W;

= 25 °C.

Fig.12

f (MHz)

MGP424

7.5

handbook, halfpage

(Ω)

2.5

Typical values; VCE= 13,5 V; PL= 15 W;

= 25 °C.

0 250 500

Fig.13

MGP425

f (MHz)

(pF)

−100

−200

−300

handbook, halfpage

(dB)

0 250 500

Typical values; VCE= 13,5 V; PL= 15 W;

= 25 °C.

Fig.14

MGP426

f (MHz)

August 1986 9

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Philips Semiconductors Product speciﬁcation

VHF power transistor BLW29

PACKAGE OUTLINE

Studded ceramic package; 4 leads SOT120A

H b

detail X

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.90

5.48

9.73

0.18

9.47

0.14

0.383

0.007

0.373

0.004

IEC JEDEC EIAJ

8.39

8.12

0.330

0.320

9.66

9.39

0.380

0.370

27.44

25.78

1.080

0.354

1.015

0.315

REFERENCES

9.00

8.00

3.41

2.92

0.134

0.115

0.065

0.055

UNIT

inches

A W

5.97

4.74

0.232

0.283

0.216

0.248

OUTLINE

VERSION

SOT120A

August 1986 10

1.66

1.39

8-32

UNC

0.38

0.015

ISSUE DATE

97-06-28

12.83

11.17

0.505

0.440

1.60

0.00

0.063

0.000

3.31

2.54

0.130

0.100

4.35

3.98

0.171

0.157

EUROPEAN

PROJECTION

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Philips Semiconductors Product speciﬁcation

VHF power transistor BLW29

DEFINITIONS

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

August 1986 11