Datasheet BLV99-SL, BLV99 Datasheet (Philips)

DATA SH EET

Product specification

September 1991

DISCRETE SEMICONDUCTORS

BLV99/SL

UHF power transistor

September 1991 2

Philips Semiconductors Product specification

UHF power transistor BLV99/SL

FEATURES

• Emitter-ballasting resistors for an
optimum temperature profile

• Gold metallization ensures
excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial transistor
encapsulated in a 4-lead SOT172D
envelope with a ceramic cap. It is
designed primarily for use as a driver
stage in base stations in the 900 MHz
communications band. All leads are
isolated from the mounting base.

PINNING - SOT172D

PIN DESCRIPTION

1 emitter
2 base
3 collector
4 emitter

PIN CONFIGURATION

QUICK REFERENCE DATA

RF performance at T

mb

= 25 °C in a common emitter class-B test circuit.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

MODE OF

OPERATION

f

(MHz)

V

CE

(V)

P

L

(W)

G

p

(dB)

η

c

(%)

c.w. narrow band 900 24 2 > 8 > 55

handbook, halfpage

e

c

b

MBB012

Fig.1 Simplified outline and symbol.

halfpage

2

1

4

3

MSB007

Top view

September 1991 3

Philips Semiconductors Product specification

UHF power transistor BLV99/SL

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter − 50 V

V

CEO

collector-emitter voltage open base − 27 V

V

EBO

emitter-base voltage open collector − 3.5 V

I

C

collector current DC value − 200 mA

I

CM

collector current peak value

f > 1 MHz

− 600 mA

P

tot

total power dissipation f > 1 MHz;

Tmb=50°C

− 6W

T

stg

storage temperature range −65 150 °C

T

j

junction operating temperature − 200 °C

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb(RF)

from junction to mounting base PL= 4.5 W; Tmb=25°C 20 K/W

Fig.2 Power/temperature derating curves.

(I) Continuous RF operation.
(II) Short time operation during mismatch.

handbook, halfpage

0 40 80 160

Th (°C)

P

tot

(W)

12

0

4

8

120

MBK466

Ι

ΙΙ

September 1991 4

Philips Semiconductors Product specification

UHF power transistor BLV99/SL

CHARACTERISTICS

T

j

= 25 °C.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

collector-base breakdown voltage open emitter;

IC= 5 mA

50 −−V

V

(BR)CEO

collector-emitter breakdown voltage VBE=0;

IC= 10 mA

27 −−V

V

(BR)EBO

emitter-base breakdown voltage open collector;

IE= 0.5 mA

3.5 −−V

I

CES

collector-emitter leakage current VBE=0;

VCE= 27 V

−− 2mA

h

FE

DC current gain VCE= 20 V;

IC= 150 mA

25 −−

E

SBR

second breakdown energy L = 25 mH;

RBE= 10 Ω;
f = 50 Hz

0.5 −−mJ

C

c

collector capacitance VCB= 24 V;

IE= Ie=0;
f = 1 MHz

− 3 − pF

C

re

feedback capacitance VCE= 24 V;

IC= 0;
f = 1 MHz

− 1.3 − pF

Fig.3 DC current gain as a function of collector

current, typical values.

VCE= 20 V; Tj=25°C.

handbook, halfpage

0 0.5

IC (A)

h

FE

100

0

20

40

60

80

0.1 0.2 0.3 0.4

MBK467

Fig.4 Collector capacitance as a function of

collector-base voltage, typical values.

IE=ie= 0; f= 1 MHz.

handbook, halfpage

0102030

V

CB

(V)

C

c

(pF)

8

6

2

0

4

MBK468

September 1991 5

Philips Semiconductors Product specification

UHF power transistor BLV99/SL

APPLICATION INFORMATION

RF performance T

mb

= 25 °C in a common emitter class-B test circuit.

MODE OF OPERATION f

(MHz)

V

CE

(V)

P

L

(W)

G

p

(dB)

η

c

(%)

c.w. narrow band 900 24 2 > 8

typ. 9.3

> 55
typ. 63

Fig.5 Gain and efficiency as functions of load

power, typical values.

Class-B operation; VCE= 24 V; f= 900 MHz;
T

mb

= 25 °C.

handbook, halfpage

10

01 3

P

L

(W)

G

p

(dB)

G

p

η

C

(%)

η

C

0

2

5

100

0

50

MBK469

Ruggedness in class-B operation

The BLV99/SL is capable of withstanding a full load
mismatch corresponding to VSWR = 50:1 through all
phases under the following conditions:

VCE= 24 V, f = 900 MHz,
Tmb=25°C, and rated output power.

Fig.6 Load power as a function of drive power,

typical values.

Class-B operation; VCE= 24 V; f= 900 MHz;
T

mb

= 25 °C.

handbook, halfpage

0

3

2

1

0

0.1 0.2 0.4
PS (W)

P

L

(W)

0.3

MBK470

September 1991 6

Philips Semiconductors Product specification

UHF power transistor BLV99/SL

List of components (see test circuit)

Notes

1. American Technical Ceramics type 100A or capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε

r

= 2.2),

thickness1⁄32inch.

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C3, C8, C9 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001
C2 multilayer ceramic chip capacitor

(note 1)

4.7 pF

C4, C6, C10 multilayer ceramic chip capacitor 220 pF
C5 63 V electrolytic capacitor 1 µF
C7 multilayer ceramic chip capacitor

(note 1)

2.2 pF

L1 stripline (note 2) 50 Ω 48 mm × 2.4 mm
L2 7 turns enamelled 0.4 mm copper

wire

50 nH int. dia. 2 mm;

leads 2 × 5 mm

L3, L7 grade 3B Ferroxcube wideband HF

choke

4312 020 36642

L4, L5 stripline (note 2) 35 Ω 14 mm × 4 mm;
L6 6 turns enamelled 1 mm copper wire 120 nH int. dia. 6 mm;

length 10 mm;

leads 2 × 5 mm
L8 stripline (note 2) 50 Ω 31 mm × 2.4 mm
L9 stripline (note 2) 50 Ω 29 mm × 2.4 mm
R1, R2 0.4 W metal film resistor 10 Ω, 5%

Fig.7 Class-B test circuit at f = 900 MHz.

handbook, full pagewidth

MDA559

T.U.T.

L1

L8

L9

L4

L2 L6

R1 L3

L5

C6C5C4

C2

C10

50 Ω

+V

CC

C7

L7

R2

C1

50 Ω

C3

C9

C8

September 1991 7

Philips Semiconductors Product specification

UHF power transistor BLV99/SL

Fig.8 Component layout for 900 MHz class-B test circuit.

The components are mounted on one side of a copper clad PTFE fibre-glass board; the other side is unetched
and serves as a ground plane. Earth connections from the component side to the ground plane are made by
fixing screws, hollow rivets and copper straps under the emitters.

handbook, full pagewidth

170 mm

R1

L3

L2

C2

L1

L4 L5 L8

L6

C10

C4

L7

R2

C5

C6

L9

C3C1

C8 C9

C7

70 mm

MDA560

+V

CC

rivets

M2

M3

September 1991 8

Philips Semiconductors Product specification

UHF power transistor BLV99/SL

Fig.9 Input impedance (series components) as a

function of frequency, typical values.

Class-B operation; VCE= 24 V; PL= 2 W;
T

mb

=25°C.

handbook, halfpage

800 850 900 1000

f (MHz)

ri, x

i

(Ω)

r

i

x

i

10

0

8

950

6

4

2

MBK471

Fig.10 Load impedance (series components) as a

function of frequency , typical values.

Class-B operation; VCE= 24 V; PL= 2 W;
T

mb

=25°C.

handbook, halfpage

800 850 900 1000

f (MHz)

RL, X

L

(Ω)

R

L

X

L

80

0

60

950

40

20

MBK472

Fig.11 Definition of transistor impedance.

handbook, halfpage

MBA451

Z

i

Z

L

Fig.12 Power gain as a function of frequency,

typical values.

Class-B operation; VCE= 24 V; PL= 2 W;
T

mb

=25°C.

handbook, halfpage

800 850 900 1000

f (MHz)

G

p

(dB)

12

10

0

8

950

6

4

2

MBK473

September 1991 9

Philips Semiconductors Product specification

UHF power transistor BLV99/SL

PACKAGE OUTLINE

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT172D

97-06-28

H
b

b

1

H

0 5 10 mm

scale

Q

A

D

D

1

c

Studless ceramic package; 4 leads SOT172D

1

2

3

4

UNIT

A

mm

Db

3.31

3.04

b

1

0.89

0.63

0.16

0.10

5.20

4.95

5.33

5.08

1.15

0.88

3.71

2.89

c

D

1

H

26.17

24.63

inches

0.13

0.12

0.035

0.025

0.006

0.004

0.205

0.195

0.210

0.200

0.045

0.035

0.146

0.114

1.03

0.97

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

September 1991 10

Philips Semiconductors Product specification

UHF power transistor BLV99/SL

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.