Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV97CE
UHF power transistor
Product specification
March 1993
Page 2
Philips Semiconductors Product specification
UHF power transistor BLV97CE
FEATURES
• Internal input matching to achieve high power gain
• Ballasting resistors for an optimum temperature profile
• Gold metallization ensures excellent reliability
DESCRIPTION
NPN silicon planar epitaxial transistor in a SOT171
envelope, intended for common emitter, class-AB
operation in radio transmitters for the 960 MHz
communications band. The transistor has a 6-lead flange
envelope, with a ceramic cap. All leads are isolated from
the flange.
QUICK REFERENCE DATA
RF performance up to T
MODE OF OPERATION f (MHz) V
=25°C in a common emitter class-AB circuit.
h
(V) PL(W) GP(dB) ηc(%)
CE
c.w. class-AB 960 24 35 > 7 > 50
PINNING - SOT171A
PIN SYMBOL DESCRIPTION
handbook, halfpage
6
1 e emitter
2 e emitter
b
3 b base
4 c collector
Top view
12345
MAM141
5 e emitter
6 e emitter
Fig.1 Simplified outline and symbol.
c
e
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
March 1993 2
Page 3
Philips Semiconductors Product specification
UHF power transistor BLV97CE
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
THERMAL RESISTANCE
collector base voltage open emitter − 50 V
collector emitter voltage open base − 27 V
emitter base voltage open collector − 3.5 V
collector current DC or average − 3A
collector current peak value
− 9A
f > 1 MHz
total power dissipation f > 1 MHz
− 70 W
Tmb=25°C
storage temperature −65 150 °C
operating junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
thj-mb
R
th mb-h
10
handbook, halfpage
I
C
(A)
1
−1
10
from junction to mounting base (RF) − 2.3 K/W
from mounting base to heatsink − 0.4 K/W
MDA441
Tmb = 25 °C
Th = 70 °C
110
V
(V)
CE
2
10
100
handbook, halfpage
P
tot
(W)
80
60
40
20
0
0
II
I
40 80
120
MDA442
Th (°C)
160
Fig.2 DC SOAR.
March 1993 3
Fig.3 Power/temperature derating;
I: DC or RF operation;
II: short-term operation during mismatch.
Page 4
Philips Semiconductors Product specification
UHF power transistor BLV97CE
CHARACTERISTICS
at T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
C
cf
collector-base breakdown voltage open emitter
IC= 50 mA
collector-emitter breakdown voltage open base
IC= 100 mA
emitter-base breakdown voltage open collector
IE= 10 mA
collector leakage current VBE=0
VCE=27V
DC current gain IC=2 A
VCE= 20 V
collector capacitance at f = 1 MHz IE=Ie=0
VCB= 25 V
feedback capacitance at f = 1 MHz IC=0
VCE= 25 V
collector-flange capacitance − 2 − pF
50 −−V
27 −−V
3.5 −−V
−−10 mA
15 −−
− 44 − pF
− 30 − pF
100
handbook, halfpage
h
FE
V
CE
80
60
40
20
0
024
= 25 V
20 V
MDA443
6
IC (A)
Fig.4 DC current gain as a function of collector
current; typical values.
100
handbook, halfpage
C
c
(pF)
80
60
40
20
8
0
010
20 30
MDA444
V
(V)
CB
Fig.5 Output capacitance as a function of
collector-base voltage; typical values.
March 1993 4
Page 5
Philips Semiconductors Product specification
UHF power transistor BLV97CE
APPLICATION INFORMATION
RF performance in a common emitter test circuit.
T
=25°C, R
h
= 0.4 K/W unless otherwise specified.
th mb-h
MODE OF OPERATION f (MHz) V
(V) I
CE
(mA) PL(W) GP(dB) ηc(%)
C(ZS)
c.w. class-AB 960 24 60 35 > 7
typ. 8.5
12
handbook, halfpage
G
p
(dB)
8
4
0
0
MDA445
60
G
p
η
10
20 40
30
PL (W)
η
(%)
40
20
0
50
handbook, halfpage
P
L
(W)
40
30
20
10
0
02
48
> 50
typ. 55
MDA446
6
P
(W)
S
Fig.6 Power gain and efficiency as a function of
load power; typical values.
March 1993 5
Fig.7 Load power as a function of input power;
typical values.
Ruggedness in class-AB operation
The BLV97CE is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases, under
the following conditions: VCE= 24 V; I
C(ZS)
= 120 mA;
f = 960 MHz at rated output power.
Page 6
Philips Semiconductors Product specification
UHF power transistor BLV97CE
handbook, full pagewidth
V
50 Ω
input
L6
B
C1
R1
L1 L2 L3 L10 L11 L12
C2 C3
C4 C5 C12
C7
D.U.T.
C6
L4 L9
C11C8
C13 C15
L7
L8L5
R2
C14 C16 C17
C10 C9
C18
V
CC
50 Ω
output
MDA447
Fig.8 Test circuit BLV97CE class-AB.
March 1993 6
Page 7
Philips Semiconductors Product specification
UHF power transistor BLV97CE
List of components (Fig.9)
DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C18 multilayer ceramic chip capacitor
note 1
C2, C3, C16,
C17
C5, C6 multilayer ceramic chip capacitor
C7, C11 multilayer ceramic chip capacitor
C8 multilayer ceramic chip capacitor 100 nF
C9 35 V solid aluminium capacitor 2.2 µF 2222 128 50228
C10 multilayer ceramic chip capacitor 3 × 100 nF
C12, C13 multilayer ceramic chip capacitor
C14, C15 multilayer ceramic chip capacitor
L1, L12 microstrip
L2, L3 microstrip
L4 microstrip
L5 3 turns enamelled 1 mm copper wire 30 nH int. dia. 4 mm
L6, L7 grade 3B ferroxcube wide-band RF
L8 4 turns enamelled 1 mm copper wire 45 nH int. dia. 4 mm
L9 microstrip
L10 microstrip
L11 microstrip
R1, R2 1 W metal film resistor 10 Ω 2322 153 51009
film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001
note 2
note 1
note 2
note 1
note 3
note 3
note 3
choke
note 3
note 3
note 3
33 pF
3.3 pF
10 pF
in parallel
12 pF
3.3 pF
50 Ω 26 × 2.4 mm
50 Ω 9.5 × 2.4 mm
42.6 Ω 6.0 × 3.0 mm
length 3 mm
leads 2 × 5 mm
4312 020 36642
length 4 mm
leads 2 × 5 mm
42.6 Ω 4.0 × 3.0 mm
50 Ω 9.0 × 2.4 mm
50 Ω 13.5 × 2.4 mm
Notes
1. ATC capacitor type 100B or capacitor of the same quality.
2. ATC capacitor type 100A or capacitor of the same quality.
3. The microstrips are on a double copper-clad PCB with PTFE fibre-glass dielectric (ε
March 1993 7
= 2.2); thickness1⁄32 inch.
r
Page 8
Philips Semiconductors Product specification
UHF power transistor BLV97CE
handbook, full pagewidth
130 mm
copper straps copper straps
rivets
rivets
copper straps
L6
L7
rivets
rivets
copper straps
70 mm
R1
C8
C1
The circuit and components are located on one side of the PTFE fibre-glass board, the other side
being fully metallized, to serve as an earth. Earth connections are made by fixing screws, hollow
rivets and copper straps around the board and under the emitters, to provide a direct contact
between the component side and the ground plane.
L5
C6
L2 L3 L4 L9L1
C3C2
C11C7
C12C5C4
Fig.9 Printed circuit board and component layout for 960 MHz test circuit.
March 1993 8
R2
L8
C15C13
L11 L12
C14
L10
C16
C10
C9
C18
C17
MDA448
Page 9
Philips Semiconductors Product specification
UHF power transistor BLV97CE
10
handbook, halfpage
Z
i
(Ω)
8
6
4
2
0
800 850 900 950 1000
X
i
R
i
f (MHz)
Fig.10 Input impedance; series components;
VCE= 24 V; PL= 35 W; R
th mb-h
typical values.
MRA176
= 0.4 K/W;
handbook, halfpage
4
Z
L
(Ω)
3
2
R
L
1
0
−1
800 850 900 950 1000
X
L
f (MHz)
Fig.11 Load impedance; series components;
VCE= 24 V; PL= 35 W; R
th mb-h
typical values.
MRC177
= 0.4 K/W;
12
handbook, halfpage
G
P
(dB)
8
4
0
800 850 900 950 1000
MRC175
f (MHz)
Fig.12 Power gain; class-AB operation;
VCE= 24 V; PL= 35 W; R
th mb-h
= 0.4 K/W;
typical values.
March 1993 9
Page 10
Philips Semiconductors Product specification
UHF power transistor BLV97CE
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads SOT171A
D
A
F
D
1
U
1
q
H
1
b
1
2
H
U
2
Db
9.25
9.04
0.364
0.356
1
D
9.30
8.99
0.366
0.354
1
5.95
5.74
0.234
0.226
A
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
6.81
6.07
0.268
0.239
2.15
1.85
0.085
0.073
b
1
3.20
2.89
0.126
0.114
c
0.16
0.07
0.006
0.003
6
345
b
e
0 5 10 mm
E
E
6.00
5.70
0.236
0.224
e
1
3.58
0.140
C
w
M
C
2
p
w
M
3
scale
F
H
11.31
3.05
10.54
2.54
0.445
0.120
0.415
0.100
B
w
H
1
9.27
9.01
0.365
0.355
1
M
3.43
3.17
0.135
0.125
AB
p
c
E
1
Q
qw
18.42
U
24.90
24.63
0.980
0.970
1
6.00
5.70
0.236
0.224
Q
4.32
4.11
0.170
0.162
E
w
U
2
2
1
0.260.51 1.02
0.010.02 0.040.725
w
3
OUTLINE
VERSION
SOT171A 97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
March 1993 10
ISSUE DATE
Page 11
Philips Semiconductors Product specification
UHF power transistor BLV97CE
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1993 11
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