Datasheet BLV958FL, BLV958-P, BLV958 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1997 Oct 15

2000 Jan 12

DISCRETE SEMICONDUCTORS

BLV958; BLV958FL

UHF power transistors

2000 Jan 12 2

Philips Semiconductors Product specification

UHF power transistors BLV958; BLV958FL

FEATURES

• Internal input and output matching for easy matching,
high gain and efficiency

• Poly-silicon emitter ballasting resistors for an optimum
temperature profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Base stations in the 800 to 960 MHz frequency range.

DESCRIPTION

NPN silicon planar epitaxial transistors primarily intended
for common emitter class-AB operation. The transistors
have internalinput and output matching by means of MOS
capacitors. The encapsulations are a 2-lead rectangular
SOT391A flange package and a SOT391B flangeless
package, both with a ceramic cap.

PINNING - SOT391A PINNING - SOT391B

PIN SYMBOL DESCRIPTION

1 c collector
2 b base
3 e emitter; connected to flange

Fig.1 Simplified outline (SOT391A) and symbol.

handbook, halfpage

MAM203

1

2

3

Top view

e

c

b

PIN SYMBOL DESCRIPTION

1 c collector
2 b base

Ground plane e emitter

Fig.2 Simplified outline (SOT391B) and symbol.

handbook, halfpage

MSA465

1

2

Top view

e

c

b

QUICK REFERENCE DATA

RF performance at Th=25°C in a common emitter test circuit.

MODE OF

OPERATION

f

(MHz)

V

CE

(V)

P

L

(W)

G

p

(dB)

η

C

(%)

CW, class-AB

900 26 75 ≥8 ≥50
960 26 75 ≥8.5 ≥50

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. Afteruse, dispose of as chemical or special wasteaccording to the regulations applying at the locationof
the user. It must never be thrown out with the general or domestic waste.

2000 Jan 12 3

Philips Semiconductors Product specification

UHF power transistors BLV958; BLV958FL

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Thermal resistance is determined under specified RF operating conditions.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter − 70 V

V

CEO

collector-emitter voltage open base − 30 V

V

EBO

emitter-base voltage open collector − 3V

I

C

collector current (DC) − 15 A

I

C(AV)

average collector current − 15 A

P

tot

total power dissipation Tmb≤ 25 °C − 250 W

T

stg

storage temperature −65 +150 °C

T

j

operating junction temperature − 200 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

thermal resistance from junction to
mounting base

P

tot

= 250 W; Tmb=25°C;

note 1

0.7 K/W

R

th mb-h

thermal resistance from mounting base
to heatsink

0.2 K/W

2000 Jan 12 4

Philips Semiconductors Product specification

UHF power transistors BLV958; BLV958FL

CHARACTERISTICS

Tj=25°C unless otherwise specified.

Notes

1. Measured under pulsed conditions: t

p

≤ 500 µs; δ≤0.01.

2. Value of Ccis that of the die only, it is not measurable because of internal matching network.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

collector-base breakdown voltage open emitter; IC=60mA 70 −−V

V

(BR)CEO

collector-emitter breakdown voltage open base; IC= 150 mA 30 −−V

V

(BR)EBO

emitter-base breakdown voltage open collector; IE= 3 mA 3 −−V

I

CES

collector leakage current VBE= 0; VCE=28V −−5mA

h

FE

DC current gain VCE=10V; IC= 4.5 A; note 1;

see Fig 3

30 − 120

C

c

collector capacitance VCB=26V; IE=ie=0;

f = 1 MHz; note 2; see Fig 4

− 75 − pF

Fig.3 DC current gain as a function of collector

current; typical values.

Measured under pulsed conditions; tp≤ 500 µs; δ≤0.01.
(1) VCE=26V.
(2) VCE=10V.

handbook, halfpage

0

80

40

120

04 81216

h

FE

IC(A)

MLD243

(2)

(1)

Fig.4 Collector capacitance as a function of

collector-base voltage; typical values.

Value Cc is that of the die only, it is not measurable because of
internal matching network.

I

E=ie

= 0; f = 1 MHz.

handbook, halfpage

0

100

150

(pF)

50

200

010203040

C

c

V (V)

CB

MLD244

2000 Jan 12 5

Philips Semiconductors Product specification

UHF power transistors BLV958; BLV958FL

APPLICATION INFORMATION

RF performance at Th=25°C in a common emitter, class-AB test circuit; R

th mb-h

= 0.2 K/W.

Ruggedness in class-AB operation

The transistorsare capable of withstanding a load mismatch corresponding to VSWR=4:1through all phasesat rated
output power, under the following conditions: V

CE

= 26 V; f = 960 MHz; ICQ= 200 mA; Th=25°C; R

th mb-h

= 0.2 K/W.

MODE OF OPERATION

f

(MHz)

V

CE

(V)

I

CQ

(mA)

P

L

(W)

G

p

(dB)

η

C

(%)

CW, class-AB

900 26 200 75 ≥8

typ. 9.5

≥50

typ. 55

960 26 200 75 ≥8.5

typ. 9.5

≥50

typ. 55

Fig.5 Power gain and collector efficiency as

functions of load power; typical values.

VCE= 26 V; ICQ= 200 mA; f = 960 MHz.

handbook, halfpage

0 20 40 60 80 100

0

MLD245

12

8

P (W)

L

60

40

20

0

4

η

C

η

C

(%)

G

p

G

p

(dB)

VCE= 26 V; ICQ= 200 mA; f = 960 MHz.

Fig.6 Load power as a function of input power;

typical values.

handbook, halfpage

048 1612

120

40

0

80

MLD246

P

L

(W)

P (W)

i

2000 Jan 12 6

Philips Semiconductors Product specification

UHF power transistors BLV958; BLV958FL

List of components (see Figs 7 and 8)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C20 Tekelec, type 5201 0.8 to 10 pF
C2, C19 multilayer ceramic chip

capacitor; note 1

15 pF; 500 V

C3 multilayer ceramic chip

capacitor; note 1

6.2 pF; 500 V

C4 electrolytic capacitor 10 µF; 63 V
C5 multilayer ceramic chip

capacitor

22 nF; 50 V

C6 multilayer ceramic chip

capacitor; note 1

1 nF; 500 V

C7 multilayer ceramic chip

capacitor; note 1

33 pF; 500 V 2222 030 28109

C8, C11, C14 multilayer ceramic chip

capacitor; note 1

100 pF; 500 V

C9, C10, C13 multilayer ceramic chip

capacitor; note 1

20 pF; 500 V

C12 solid tantalum capacitor 1 µF; 35 V
C15 multilayer ceramic chip

capacitor

100 nF; 50 V

C16 electrolytic capacitor 47 µF; 40 V 2222 036 68479

Fig.7 Class-AB test circuit at f = 960 MHz.

handbook, full pagewidth

MBH109

R1

L5

C7

C4

C2 C19

C1

C9

C8

C3

C17

C18

C6C5

R2

L8

C16

C15

C14

L6 L7

C12C11

C10

L3 L4 L9 L10

L2L1 L12L11

input
50 Ω

output

50 Ω

+V

bias

+V

S

DUT

,

,

,

,

C20

C21

C13

2000 Jan 12 7

Philips Semiconductors Product specification

UHF power transistors BLV958; BLV958FL

Notes

1. American Technical Ceramics type 100B or capacitor of same quality.

2. The striplines are on double-clad printed-circuit board with PTFE fibre-glass dielectric (εr= 2.25); thickness1⁄32inch.

C17 multilayer ceramic chip

capacitor; note 1

4.7 pF; 500 V

C18 multilayer ceramic chip

capacitor; note 1

3.3 pF; 500 V

C21 multilayer ceramic chip

capacitor; note 1

2.7 pF; 500 V

L1 stripline; note 2 length 51 mm

width 2.2 mm

L2 stripline; note 2 length 7 mm

width 2.2 mm

L3 stripline; note 2 length 5.5 mm

width 20 mm

L4 stripline; note 2 length 9 mm

width 20 mm

L5, L8 Ferroxcube chip-bead

grade 4S2

4330 030 36300

L6 5 turns enamelled 1 mm

copper wire

int. diameter 4 mm
close wound

L7 4 turns enamelled 1 mm

copper wire

int. diameter 4 mm
close wound

L9 stripline; note 2 length 12.5 mm

width 20 mm

L10 stripline; note 2 length 2 mm

width 20 mm

L11 stripline; note 2 length 17 mm

width 2.2 mm

L12 stripline; note 2 length 41 mm

width 2.2 mm

R1, R2 metal film resistor 100 Ω; 0.4 W

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

2000 Jan 12 8

Philips Semiconductors Product specification

UHF power transistors BLV958; BLV958FL

Fig.8 Component layout and printed-circuit board for 960 MHz class-AB test circuit.

The same printed-circuit board can also be used for the flangeless version FL.
Dimensions in mm.
The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

handbook, full pagewidth

75

70

70

MBH110

75

+V

bias

+V

S

L1 L2

L3 L4

L5

L6

L7L9 L10

C1

C2

C3

C6

C4

C5

L8

R1

L11 L12

R2

C7

C8

C9

C10

C11

C12

C13

C14

C16

C15

C17

C21

C18

C19

C20

2000 Jan 12 9

Philips Semiconductors Product specification

UHF power transistors BLV958; BLV958FL

Fig.9 Input impedance as a function of frequency

(series components); typical values.

VCE= 26 V; ICQ= 200 mA; PL=75W;
T

h

=25°C; R

th mb-h

= 0.2 K/W.

handbook, halfpage

800 850 900

5

0

4

MLD249

950 10501000

3

2

1

Z

i

(Ω)

f (MHz)

x

i

r

i

Fig.10 Load impedance as a function of frequency

(series components); typical values.

VCE= 26 V; ICQ= 200 mA; PL=75W;
T

h

=25°C; R

th mb-h

= 0.2 K/W.

handbook, halfpage

800 850 900 950

6

6

4

MLD252

10501000

0

2

2

4

Z

L

(Ω)

f (MHz)

R

L

X

L

Fig.11 Power gain as a function of frequency;

typical values.

VCE= 26 V; ICQ= 200 mA; PL=75W;
T

h

=25°C; R

th mb-h

= 0.2 K/W.

handbook, halfpage

800 850 900 950

0

MLD253

10501000

12

8

4

G

f (MHz)

p

(dB)

Fig.12 Definition of transistor impedance.

handbook, halfpage

MBA451

Z

i

Z

L

2000 Jan 12 10

Philips Semiconductors Product specification

UHF power transistors BLV958; BLV958FL

PACKAGE OUTLINES

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT391A

97-05-29
99-12-08

0 5 10 mm

scale

Flanged ceramic package; 2 mounting holes; 2 leads SOT391A

0.15

0.10

5.84

5.59

10.87

10.67

10.26

10.06

1.65

1.40

15.75

14.73

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

3.43

3.18

5.21

4.45

2.29

2.03

UNIT

Q

cD

10.29

10.03

E

1

E

FHp q

mm

b

22.99

22.73

U

2

U

1

9.91

9.65

0.2520.32

w

1

0.51

0.006

0.004

0.230

0.220

0.428

0.420

10.92

10.67

D

1

0.430

0.420

0.404

0.396

0.065

0.055

0.620

0.580

0.135

0.125

0.205

0.175

0.090

0.080

0.405

0.395

inches

0.905

0.895

0.390

0.380

0.0100.800 0.020

w

2

A

D

D

1

q

U

1

1

3

2

A

U

2

E

1

E

p

b

H

Q

F

c

M M

C

C

A

w

2

B

w

1

AB

M M M

2000 Jan 12 11

Philips Semiconductors Product specification

UHF power transistors BLV958; BLV958FL

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philipsfor any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT391B 97-05-29

0 5 10 mm

scale

Flangeless ceramic package; 2 leads SOT391B

0.16

0.10

5.85

5.58

11.54

10.51

10.93

9.90

1.02

0.76

DIMENSIONS (millimetre dimensions are derived
from the original inch dimensions)

4.09

3.02

D

1

2

A

E

b

L

L

Q

c

UNIT

Q

cD

E

2.79

2.29

L

mm

b

A

© Philips Electronics N.V. SCA
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Internet: http://www.semiconductors.philips.com

2000

69

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Printed in The Netherlands 125002/04/pp12 Date of release: 2000 Jan 12 Document order number: 9397 750 06671