Datasheet BLV950 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV950

UHF push-pull power transistor

Product specification
Supersedes data of 1996 Jan 26

1997 Oct 27

Philips Semiconductors Product specification

UHF push-pull power transistor BLV950

FEATURES

• Internal input and output matching for easy matching,
high gain and efficiency

• Poly-silicon emitter ballasting resistors for an optimum
temperature profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Base station transmitters in the 800 to 960 MHz range.

DESCRIPTION

Two NPN silicon planar epitaxial transistors in push-pull
configuration, intended for linear common emitter
class-AB operation. The transistors are encapsulated in a
4-lead SOT262A2 flange package with 2 ceramic caps.
The flange provides the common emitter connection for
both transistors.

PINNING - SOT262A2

PIN SYMBOL DESCRIPTION

1 c1 collector 1
2 c2 collector 2
3 b1 base 1
4 b2 base 2
5 e common emitter; connected

to flange

handbook, halfpage

12

b1

55

34

Top view

b2

MAM031

Fig.1 Simplified outline and symbol.

c1

e

c2

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

=25°C in a common emitter push-pull test circuit.

h

f

(MHz)

V

(V)

CE

P

(W)

L

G

(dB)

p

η

C

(%)

d

3

(dBc)

CW, class-AB 900 26 150 ≥8 ≥45 −

960 26 150 ≥7.5 ≥45 −

2-tone, class-AB 900 26 150 (PEP) ≥8.5 ≥35 ≤−30

960 26 150 (PEP) ≥8 ≥35 ≤−30

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Oct 27 2

Philips Semiconductors Product specification

UHF push-pull power transistor BLV950

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor section

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 70 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 3V
collector current (DC) − 12 A
average collector current − 12 A
total power dissipation (DC) Tmb=25°C − 340 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

thermal resistance from junction to

P

= 340 W; Tmb=25°C; note 1 0.52 K/W

tot

mounting base

R

th mb-h

thermal resistance from mounting

0.15 K/W

base to heatsink

Note

1. Total device; both sections equally loaded; thermal resistance is determined under specified RF operating

conditions.

1997 Oct 27 3

Philips Semiconductors Product specification

UHF push-pull power transistor BLV950

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor section

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

Notes

1. Measured under pulse conditions: t

2. Value Cc is that of the die only, it is not measurable because of internal matching network.

collector-base breakdown voltage open emitter; IC=60mA 70 −−V
collector-emitter breakdown voltage open base; IC= 150 mA 30 −−V
emitter-base breakdown voltage open collector; IE= 3 mA 3 −−V
collector leakage current VBE= 0; VCE=28V −−5mA
DC current gain VCE= 10 V; IC= 4.5 A; note 1 30 − 120
collector capacitance VCB= 26 V; IE=ie=0;

− 75 − pF

f = 1 MHz; note 2

≤ 300 µs; δ≤0.01.

p

80

handbook, halfpage

h

FE

60

40

20

0

04 81216

Measured under pulsed conditions; tp≤ 300µs; δ≤0.01.
(1) VCE=26V.
(2) VCE=10V.

(1)

(2)

MLD256

IC(A)

Fig.2 DC current gain as a function of collector

current; typical values.

300

handbook, halfpage

C

c

(pF)

200

100

0

0102030 5040

Value Cc is that of the die only, it is not measurable because of
internal matching network.

= 0; f = 1 MHz.

I

E=ie

V (V)

Fig.3 Collector capacitance as a function of

collector-base voltage; typical values.

MLD257

CB

1997 Oct 27 4

Philips Semiconductors Product specification

UHF push-pull power transistor BLV950

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter push-pull test circuit; R

h

th mb-h

= 0.15 K/W.

MODE OF OPERATION

f

(MHz)

CW, class-AB 900 26 2 × 100 150 ≥8

960 26 2 × 100 150 ≥7.5

2-tone, class-AB note 1 26 2 × 100 150 (PEP) ≥8.5

note 2 26 2 × 100 150 (PEP) ≥8

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

typ. 9

typ. 8.5

typ. 9.5

typ. 9

η

C

(%)

≥45

typ. 50

≥45

typ. 50

≥35

typ. 40

≥35

typ. 40

d

3

(dBc)

−

−

≤−28

typ. −31

≤−30

typ. −33

Notes

1. f

= 900.0 MHz; f2= 900.1 MHz.

1

2. f1= 960.0 MHz; f2= 960.1 MHz.

Ruggedness in class-AB operation

The BLV950 is capable of withstanding a load mismatch corresponding to VSWR =2:1 through all phases under the
conditions: P

= 150 W; f = 960 MHz; VCE= 26 V; ICQ=2×100 mA; Th=25°C; R

L

= 0.15 K/W and also a load

th mb-h

mismatch of VSWR = 5 : 1 through all phases at PL= 150 W (PEP) and f1= 960.0 MHz and f2= 960.1 MHz.

12

handbook, halfpage

G

p

(dB)

8

MLD258

60

η

C

G

p

η

C

(%)

40

200

handbook, halfpage

P

L

(W)

150

100

MLD259

4

0

0 50 100 150 200

VCE= 26 V; ICQ=2×100 mA; f = 960 MHz.

P (W)

L

20

0

Fig.4 Power gain and efficiency as functions of

load power; typical values.

1997 Oct 27 5

50

0

0102030

VCE= 26 V; ICQ=2×100 mA; f = 960 MHz.

P (W)

i

Fig.5 Load power as a function of input power;

typical values.

Philips Semiconductors Product specification

UHF push-pull power transistor BLV950

12

handbook, halfpage

G

p

(dB)

8

4

0

0 50 100 150 200

VCE= 26 V; ICQ=2×100 mA; f1= 960.0 MHz; f2= 960.1 MHz.

G

p

η

C

MLD260

P (PEP) (W)

L

Fig.6 Power gain and efficiency as functions of

load power; typical values.

60

40

20

0

η

(%)

200

handbook, halfpage

P

L

C

(PEP)

(W)

150

100

50

0

0102030

VCE= 26 V; ICQ=2×100 mA; f1= 960.0 MHz; f2= 960.1 MHz.

MLD261

Pi (PEP) (W)

Fig.7 Load power as a function of input power;

typical values.

25

handbook, halfpage

d

im

(dBc)

30

d

3

35

d

5

40

45

VCE= 26 V; ICQ=2×100 mA; f1= 960.0 MHz; f2= 960.1 MHz.

d

7

050

100 150 200

MLD262

P (PEP) (W)

L

Fig.8 Intermodulation distortion as a function of

load power; typical values.

1997 Oct 27 6

Philips Semiconductors Product specification

UHF push-pull power transistor BLV950

handbook, full pagewidth

C2

V

bias

R5

input

50 Ω

C1

C3

L8

R1

L1

C19

L2

C21 C22 C23

L3

C20

C5 C7 C9

C4 C6

L4

L5

C32

C8

L9

L10 L16

L6

L7

L11 L17

L12

C35

DUT

C36

C33

C34

L15

L20 L22

L21 L23

L18

C37

L14

R3

L24 L26

L25 L27

C31

V

S

C30

C29

L28

C27

L29

C26C24 C25

L30

C28

output

50 Ω

V

bias

R6

C11

C10

R2

L13

C13

C15

C12 C14 C16

C17

C18

Fig.9 Class-AB test circuit at 900 to 960 MHz.

1997 Oct 27 7

C39

C38

R4

L19

C41

C40

C42

MLD263

V

S

Philips Semiconductors Product specification

UHF push-pull power transistor BLV950

List of components (see Figs 9 and 10)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C10 tantalum capacitor 2.2 µF, 35 V 2022 019 00058
C2, C11, C30, C34,

C37, C41
C3, C12 electrolytic capacitor 1 µF, 63 V 2222 085 78108
C4, C13 electrolytic capacitor 10 µF, 16 V 2222 085 75109
C5, C14, C31, C40 tantalum capacitor 1 µF, 35 V 2022 019 00056
C6, C15, C29, C42 multilayer ceramic chip

C7, C16 multilayer ceramic chip

C8, C17 multilayer ceramic chip

C9, C18, C19, C20,
C35, C36

C23 multilayer ceramic chip

C25 multilayer ceramic chip

C21, C22 film dielectric trimmer 9 pF 2222 809 09005
C24, C26 film dielectric trimmer 3.5 pF 2222 809 05215
C27, C28 multilayer ceramic chip

C32, C39 electrolytic capacitor 10 µF, 63 V 2222 030 28109
C33, C38 electrolytic capacitor 1 µF, 63 V 2222 030 38108
L1, L3 stripline; note 2 35 Ω length 50.7 mm

L2 semi-rigid cable; note 3 50 Ω ext. conductor

L4, L5 stripline; note 2 35 Ω length 26.5 mm

L6, L7 stripline; note 2 20 Ω length 9.2 mm

L10, L11, L16, L17 stripline; note 2 7 Ω length 2.5 mm

L8, L13, L14, L19 grade 4S2 Ferroxcube

L9, L12 microchoke 4.7 µH 4322 057 04781
L15, L18 4 turns enamelled 1 mm

L20, L21 stripline; note 2 14 Ω length 6 mm

multilayer ceramic chip
capacitor; note 1

capacitor

capacitor

capacitor; note 1
multilayer ceramic chip

capacitor; note 1

capacitor; note 1

capacitor; note 1

capacitor; note 1

chip-bead

copper wire

300 pF, 200 V

100 nF, 50 V 2222 581 76641

10 nF, 50 V 2222 581 76627

330 pF, 200 V

39 pF, 500 V

2 pF, 500 V

3.9 pF, 500 V

68 pF, 500 V

width 4 mm

length 50.7 mm
ext. diameter 2.2 mm

width 4 mm

width 8 mm

width 27 mm

4330 030 36300

100 nH int. diameter 6 mm

close wound

width 12.5 mm

1997 Oct 27 8

Philips Semiconductors Product specification

UHF push-pull power transistor BLV950

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

L22, L23 stripline; note 2 14 Ω length 7 mm

width 12.5 mm

L24, L25 stripline; note 2 18 Ω length 11 mm

width 9 mm

L26, L27 stripline; note 2 50 Ω length 6.5 mm

width 2.5 mm

L28, L30 stripline; note 2 30 Ω length 49.3 mm

width 5 mm

L29 semi-rigid cable; note 3 50 Ω ext. conductor

length 49.3 mm

ext. diameter 3.6 mm
R5, R6 metal film resistor 0.4 W, 1 Ω 2322 151 71008
R1, R2 metal film resistor 0.4 W, 5.11 Ω 2322 151 75118
R3, R4 metal resistor 1 W, 5.11 Ω 2322 153 75118

Notes

1. American Technical Ceramics type 100B or capacitor of same quality.

2. The striplines are on a double copper-clad printed-circuit board, with PTFE microfibre-glass dielectric (εr= 2.2);
thickness1⁄32"; thickness of the copper sheet 2 × 35 µm.

3. Semi-rigid cables soldered respectively on striplines L1 and L28.

1997 Oct 27 9

Philips Semiconductors Product specification

UHF push-pull power transistor BLV950

handbook, full pagewidth

85

64.5

C3C4C5C6C7

C2

C1

R5

R6

C21

C11

R1

L8

L4

L5

L13

R2

C12 C14

C13

V

bias

L3

C19

C20

L1

L2

V

bias

C10

C8

C15

C17

C16

C9

L6

C23

C22

L7

C18

L9

L10

C24

L11

L12

C35

L15

L16
L20

L21
L17

L18

C36

C25

C34

L22

L23

C37

C38

C33C32

L14

R3

L24

C26

L25

L19

C39

R4

C31

L26

L27

C40

68.5

C27

C28

C41

C30

C29

C42

V

L28

L29

L30

V

85

S

S

MLD264

Dimensions in mm.
The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

Fig.10 Component layout and printed-circuit board for 900 to 960 MHz class-AB test circuit.

1997 Oct 27 10

Philips Semiconductors Product specification

UHF push-pull power transistor BLV950

handbook, halfpage

8

Z

i

(Ω)

6

4

2

0

−2
840 880 920

VCE= 26 V; ICQ=2×100 mA; PL= 150 W (total device);

=25°C; R

T

h

th mb-h

= 0.15 K/W.

MLD265 - 1

r

i

x

i

960 1000

f (MHz)

Fig.11 Input impedance as a function of frequency

(series components); typical values per
section.

handbook, halfpage

4

Z

L

(Ω)

2

0

−2

−4

840 880 920

VCE= 26 V; ICQ=2×100 mA; PL= 150 W (total device);

=25°C; R

T

h

th mb-h

= 0.15 K/W.

MLD266 - 1

R

L

X

L

960 1000

f (MHz)

Fig.12 Load impedance as a function of frequency

(series components); typical values per
section.

12

handbook, halfpage

G

p

(dB)

8

4

0

840 880 920 960

VCE= 26 V; ICQ=2×100 mA; PL= 150 W (total device);

=25°C; R

T

h

th mb-h

= 0.15 K/W.

f (MHz)

Fig.13 Power gain as a function of frequency;

typical values.

MLD267

1000

handbook, halfpage

Fig.14 Definition of transistor impedance.

Z

i

Z

MBA451

L

1997 Oct 27 11

Philips Semiconductors Product specification

UHF push-pull power transistor BLV950

PACKAGE OUTLINE

Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A2

D

A

F

H

U

2

A

U

1

q

H

1

w

2

M

C

12

5

43

scale

w

3

M

b

e

0 5 10 mm

B

C

p

w

1

M

AB

c

E

1

Q

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

5.85

5.58

c

Db

21.98

0.16

0.10

0.006

0.004

IEC JEDEC EIAJ

21.71

0.865

0.855

11.05

0.435

EE

e U

10.27

10.05

0.404

0.395

1

10.29

10.03

0.405

0.070

0.396

0.060

REFERENCES

F

1.78

1.52

H

20.58

20.06

0.81

0.79

H

1

17.02

16.51

0.67

0.65

p

3.28

3.02

0.129

0.119

Q

2,47

2.20

0.097

0.087

qw

U

1

2

9.91

34.17

27.94

9.65

33.90

0.390

1.345

0.380

1.335

EUROPEAN

PROJECTION

UNIT

inches

A

5.39

mm

4.62

0.230

0.212

0.220

0.182

OUTLINE

VERSION

SOT262A2 97-06-28

1997 Oct 27 12

w

1

ISSUE DATE

w

3

2

0.250.51 1.02

0.010.02 0.041.100

Philips Semiconductors Product specification

UHF push-pull power transistor BLV950

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Oct 27 13

Philips Semiconductors Product specification

UHF push-pull power transistor BLV950

NOTES

1997 Oct 27 14

Philips Semiconductors Product specification

UHF push-pull power transistor BLV950

NOTES

1997 Oct 27 15

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© Philips Electronics N.V. 1997 SCA55
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Printed in The Netherlands 127067/00/03/pp16 Date of release: 1997 Oct 27 Document order number: 9397 75002842