Datasheet BLV946 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV946

UHF power transistor

Product specification
Supersedes data of 1995 Jun 29

1997 Oct 30

Philips Semiconductors Product specification

UHF power transistor BLV946

FEATURES

• Internal input and output matching for easy matching,
high gain and efficiency

• Poly-silicon emitter ballasting resistors for an optimum
temperature profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Base stations in the 850 to 960 MHz frequency range.

DESCRIPTION

NPN silicon planar transistor intended for common emitter
class-AB operation. The transistor has internal input and
output matching by means of MOS capacitors.
The encapsulation is a SOT273A flange envelope with a
ceramic cap. All leads are isolated from the flange.

PINNING - SOT273A

PIN DESCRIPTION

1 emitter
2 emitter
3 collector
4 base
5 emitter
6 emitter

handbook, halfpage

12345

Top view

Fig.1 Simplified outline and symbol.

6

MBK131

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

=25°C in a common emitter test circuit.

h

f

(MHz)

V

(V)

CE

P

(W)

L

G

p

(dB)

η

(%)

C

CW, class-AB 960 26 40 ≥9 ≥55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Oct 30 2

Philips Semiconductors Product specification

UHF power transistor BLV946

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

collector-base voltage open emitter − 70 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 3V
collector current (DC) − 6A
average collector current − 6A
total power dissipation up to Tmb=25°C − 90 W
storage temperature range −65 +150 °C
operating junction temperature − +200 °C

thermal resistance from junction to

P

= 90 W; Tmb=25°C 1.94 K/W

tot

mounting base
thermal resistance from mounting

0.3 K/W

base to heatsink

10

handbook, halfpage

I

C

(A)

1

11010

(1) Tmb=25°C.
(2) Th=70°C.

(2)

Fig.2 DC SOAR.

(1)

VCE(V)

MLD231

120

handbook, halfpage

P

tot

(W)

80

40

2

0

040

(1) Continuous operation.
(2) Short-time operation during mismatch.

(2)

(1)

80 120 160

MLD232

o

T ( C)

h

Fig.3 Power derating curve.

1997 Oct 30 3

Philips Semiconductors Product specification

UHF power transistor BLV946

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

Notes

1. Measured under pulsed conditions: t

2. CC value is that of the die only; it is not measurable because of internal matching network.

collector-base breakdown voltage open emitter; IC=30mA 70 −−V
collector-emitter breakdown voltage open base; IC=60mA 30 −−V
emitter-base breakdown voltage open collector; IE= 1.2 mA 3 −−V
collector leakage current VBE= 0; VCE=28V −−3mA
DC current gain VCE=10V; IC= 2 A; note 1 30 − 120
collector capacitance VCB=26V; IE=ie=0;

− 33 − pF

f = 1 MHz; note 2

≤ 500 µs; δ≤0.01.

p

100

handbook, halfpage

h

FE

80

60

40

20

0

0123456

Measured under pulsed conditions; tp≤ 500 µs; δ≤0.01.
(1) VCE=26V.
(2) VCE=10V.

(1)

(2)

MLD233

IC(A)

Fig.4 DC current gain as a function of collector

current; typical values.

1997 Oct 30 4

Philips Semiconductors Product specification

UHF power transistor BLV946

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter, class-AB test circuit; R

h

th mb-h

= 0.3 K/W.

MODE OF OPERATION

f

(MHz)

CW, class-AB 960 26 130 40 ≥9

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

C

≥55

typ. 11

typ. 60

Ruggedness in class-AB operation

The BLV946 is capable of withstanding a load mismatch corresponding to VSWR =5:1 through all phases at rated
output power, under the following conditions: V

16

handbook, halfpage

G

p

(dB)

12

G

p

8

η

4

= 26 V; f = 960 MHz; ICQ= 130 mA; Th=25°C; R

CE

MLD234

80

η

(%)

60

40

20

60

handbook, halfpage

P

L

(W)

40

20

th mb-h

= 0.3 K/W.

MLD235

0

0204060

VCE=26V.
ICQ= 130 mA.
f = 960 MHz.

P (W)

L

Fig.5 Power gain and efficiency as functions of

load power; typical values.

0

0

024 1068

VCE=26V.
ICQ= 130 mA.
f = 960 MHz.

P (W)

i

Fig.6 Load power as a function of input power;

typical values.

1997 Oct 30 5

Philips Semiconductors Product specification

UHF power transistor BLV946

handbook, full pagewidth

V

bias

input
50 Ω

C6C5

C1 C2

C4

L6

R1

C7

C8

L2L1 L12L11

L5 L8

L9

DUT

C3 C16

L4

L3

L10

C9 C12

C10 C11

L7

R2

C17 C18

C13

C14

V

C15

output

50 Ω

MLD236

Fig.7 Class-AB test circuit at 960 MHz.

List of components

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C2, C17, C18 TEKELEC variable

12 pF

capacitor type 6451

C3, C16 multilayer ceramic chip

68 pF, 500 V

capacitor; note 1
C4, C13 electrolytic capacitor 10 µF, 63 V 2222 030 28109
C5, C8, C10, C13,

C15
C6 multilayer ceramic chip

multilayer ceramic chip

capacitor; note 1

20 pF, 500 V

100 nF, 50 V 2222 581 76641

capacitor
C7, C11 multilayer ceramic chip

100 pF, 500 V

capacitor; note 1
C9 multilayer ceramic chip

470 pF, 50 V 2222 731 18471

capacitor
C12 multilayer ceramic chip

10 nF, 50 V 2222 731 18103

capacitor
C14 multilayer ceramic chip

22 nF, 50 V 2222 731 18223

capacitor
L1 stripline; note 2 50 Ω length 36 mm

width 2.2 mm

L2 stripline; note 2 50 Ω length 8 mm

width 2.2 mm

L3, L9 stripline; note 2 8 Ω length 10 mm

width 20 mm

L4, L10 stripline; note 2 37 Ω length 4.5 mm

width 3.5 mm

CC

1997 Oct 30 6

Philips Semiconductors Product specification

UHF power transistor BLV946

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

L5 microchoke 2.2 µH 4322 057 02281
L6, L7 Ferroxcube wide band

HF choke, grade 3B
L8 4.5 turns enamelled 1 mm

copper wire
L11 stripline; note 2 50 Ω length 7 mm

L12 stripline; note 2 50 Ω length 37 mm

R1, R2 metal film resistor 100 Ω; 0.4 W 2322 171 11001

Notes

1. American Technical Ceramics type 100B or capacitor of same quality.

2. The striplines are on a double copper-clad printed-circuit board, with PTFE microfibre-glass dielectric (εr= 2.2);
thickness1⁄32"; thickness of the copper sheet 2 × 35 µm.

50 nH internal dia. 4 mm

close wound

width 2.2 mm

width 2.2 mm

4312 020 36642

1997 Oct 30 7

Philips Semiconductors Product specification

UHF power transistor BLV946

handbook, full pagewidth

70

70

KV9004 KV9005

C6

V

C4

bias

C1

C5

L1

L6
R1

C8

C7

L3

L5

L2 L11 L12

C2

L4 L10

C3

C9

L9

L8

C16

70

C10

C12

C11

L7
R2

C17 C18

C14

C13

C15

70

V

CC

MLD237

Dimensions in mm.
The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

Fig.8 Component layout and printed circuit board for 960 MHz class-AB test circuit.

1997 Oct 30 8

Philips Semiconductors Product specification

UHF power transistor BLV946

10

handbook, halfpage

Z

i

(Ω)

5

0

5

10

840 880 920

VCE= 26 V; ICQ= 130 mA; PL=40W;
Th=25°C; R

th mb-h

= 0.3 K/W.

x

i

r

i

MLD238

960 1000

f (MHz)

Fig.9 Input impedance asa function of frequency

(series components); typical values.

10

handbook, halfpage

Z

L

(Ω)

5

0

5

10

840 880 920

VCE= 26 V; ICQ= 130 mA; PL=40W;
Th=25°C; R

th mb-h

= 0.3 K/W.

R

L

X

L

MLD239

960 1000

f (MHz)

Fig.10 Load impedance as a function of frequency

(series components); typical values.

14

handbook, halfpage

G

p

(dB)

12

10

8

6

820 880 940 1000

VCE= 26 V; ICQ= 130 mA; PL=40W;
Th=25°C; R

th mb-h

= 0.3 K/W.

Fig.11 Power gain as a function of frequency;

typical values.

MLD240

f (MHz)

1060

handbook, halfpage

Fig.12 Definition of transistor impedance.

Z

i

Z

MBA451

L

1997 Oct 30 9

Philips Semiconductors Product specification

UHF power transistor BLV946

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads SOT273A

D

A

F

U

1

q

w

H

1

b

1

5

H

U

2

A

6

3

1

4

2

b

e

0 5 10 mm

scale

M

2

p

w

M

3

B

C

C

c

E

w

M

AB

1

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

inches

A

2.42

1.80

0.095

0.071

3.18

2.92

0.125

0.115

7.45

mm

7.27

0.286

0.254

OUTLINE
VERSION

SOT273A 97-06-28

c

0.16

0.10

Db

10.93

10.66

0.430

0.420

F

e

EU

10.29

10.03

0.405

0.395

3.05

4.35

2.54

0.120

0.171

0.100

REFERENCES

b

1

0.006

0.004

IEC JEDEC EIAJ

H

15.75

14.73

0.62

0.58

H

10.93

10.66

0.43

0.42

qw

18.42

U

1

2

10.29

24.90

10.03

24.63

0.405

0.98

0.395

0.97

EUROPEAN

PROJECTION

p

1

3.31

3.04

0.130

0.120

Q

4.35

4.03

0.171

0.159

1997 Oct 30 10

w

1

ISSUE DATE

w

3

2

0.250.51 1.02

0.010.02 0.040.725

Philips Semiconductors Product specification

UHF power transistor BLV946

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Oct 30 11

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© Philips Electronics N.V. 1997 SCA55
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Printed in The Netherlands 127067/00/03/pp12 Date of release: 1997Oct 30 Document order number: 9397 750 02986