Datasheet BLV935 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV935

UHF power transistor

Product specification

1995 Jun 29

Philips Semiconductors Product specification

UHF power transistor BLV935

FEATURES

• Emitter ballasting resistors for an optimum temperature
profile

• Gold metallization ensures excellent reliability

• Internal input matching to achieve high power gain and

easy design of wideband circuits.

APPLICATIONS

• Base stations in the 820 to 980 MHz range.

PINNING - SOT273

PIN SYMBOL DESCRIPTION

1 e emitter
2 e emitter
3 c collector
4 b base
5 e emitter
6 e emitter

DESCRIPTION

NPN silicon planar epitaxial transistor intended for
common emitter class-AB operation. The transistor has
internal input matching by means of MOS capacitors and
is encapsulated in a 6-lead SOT273 flange envelope with
a ceramic cap. All leads are isolated from the flange.

handbook, halfpage

1

3

5

Top view

2

4

b

6

c

e

MAM033

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

=25°C in a common emitter test circuit.

h

f

(MHz)

V

(V)

CE

P

(W)

L

G

p

(dB)

η

(%)

C

CW, class-AB 960 26 30 ≥ 9 ≥ 55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1995 Jun 29 2

Philips Semiconductors Product specification

UHF power transistor BLV935

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

collector-base voltage open emitter − 70 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 3V
collector current (DC) − 4A
average collector current − 4A
total power dissipation up to Tmb=25°C − 70 W
storage temperature −65 +150 °C
operating junction temperature − +200 °C

thermal resistance from junction to

P

= 70 W; Tmb=25°C 2.5 K/W

tot

mounting base
thermal resistance from mounting

0.3 K/W

base to heatsink

10

handbook, halfpage

I

C

(A)

1

1

10

11010

(1) Tmb=25°C.
(2) Th=70°C.

(2)

Fig.2 DC SOAR.

(1)

VCE(V)

MLD140

100

handbook, halfpage

P

tot

(W)

80

60

40

20

2

0

0 40 80 120 160

(1) Continuous operation.
(2) Short-time operation during mismatch.

(2)

(1)

MLD141

o

T ( C)

h

Fig.3 Power derating curves.

1995 Jun 29 3

Philips Semiconductors Product specification

UHF power transistor BLV935

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

C

re

Notes

1. Measured under pulsed conditions: t

2. CC value is that of the die only; it is not measurable because of internal matching network.

collector-base breakdown

open emitter; IC=20mA 70 −−V

voltage
collector-emitter breakdown

open base; IC=50mA 30 −−V

voltage
emitter-base breakdown

open collector; IE=1mA 3 −−V

voltage
collector leakage current VBE= 0; VCE=28V −−2mA
DC current gain VCE= 10 V; IC= 1.5 A; note 1 30 − 120
collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz;

− 25 − pF

note 2

feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 17 − pF

≤ 500 µs; δ≤0.01.

p

100

handbook, halfpage

h

FE

80

60

40

20

0

0123456

Measured under pulsed conditions; tp≤ 500 µs; δ≤0.01.
(1) VCE=26V.
(2) VCE=10V.

(1)

(2)

Fig.4 DC current gainas a function of collector

current; typical values.

MLC680

IC(A)

100

handbook, halfpage

C

c

(pF)

80

60

40

20

0

01020304050

Cc value is that of the die only; it is not measurable because of
internal matching network.

f = 1 MHz.

VCB(V)

Fig.5 Collector capacitance as a function of

collector-base voltage; typical values.

MLC681

1995 Jun 29 4

Philips Semiconductors Product specification

UHF power transistor BLV935

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter, class-AB test circuit; R

h

th mb-h

= 0.3 K/W.

MODE OF OPERATION

f

(MHz)

CW, class-AB 960 26 100 30 ≥9

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

C

≥55

typ. 10

typ. 60

Ruggedness in class-AB operation

The BLV935 is capable of withstanding a load mismatch corresponding to VSWR =5:1 through all phases at rated
output power, under the following conditions: V

16

handbook, halfpage

G

p

(dB)

12

8

4

η

G

p

= 26 V; f = 960 MHz; ICQ= 100 mA; Th=25°C; R

CE

MLD142

80

η

(%)

60

40

20

50

handbook, halfpage

P

L

(W)

40

30

20

10

th mb-h

= 0.3 K/W.

MLD143

0

02010 50

VCE=26V.
ICQ= 100 mA.
f = 960 MHz.

4030

P (W)

L

Fig.6 Power gain and efficiency as functions of

load power; typical values.

0

0

0246810

VCE=26V.
ICQ= 100 mA.
f = 960 MHz.

P (W)

i

Fig.7 Load power as a function of input power;

typical values.

1995 Jun 29 5

Philips Semiconductors Product specification

UHF power transistor BLV935

handbook, full pagewidth

V

bias

input
50 Ω

C12

R1

L11

C2

C8C7C6

L9

L3

DUT

C1 C4

L2L1

L4

C3

C10C9 C11

L10

L6

L5

R2

L12

C5

V

CC

C13

L8L7

output

50 Ω

MLD144

Fig.8 Class-AB broadband test circuit at 850 to 980 MHz.

List of components (see Figs 8 and 9)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C4 multilayer ceramic chip

68 pF

capacitor; note 1

C2 multilayer ceramic chip

0.7 pF

capacitor; note 1

C3 multilayer ceramic chip

3.9 pF

capacitor; note 1

C5 multilayer ceramic chip

2pF

capacitor; note 1

C6, C11 multilayer ceramic chip

1nF

capacitor; note 1

C7, C8, C9, C10 multilayer ceramic chip

20 pF

capacitor; note 1

C12, C13 63 V solid aluminium

10 µF 2222 030 38109

capacitor
L1, L8 stripline; note 2 50 Ω 41 × 2.4 mm
L2, L7 stripline; note 2 50 Ω 12 × 2.4 mm
L3, L6 stripline; note 2 9 Ω 10 × 20 mm
L4, L5 stripline; note 2 38 Ω 4.5 × 3.5 mm
L9 microchoke 100 nH 4322 057 01071

1995 Jun 29 6

Philips Semiconductors Product specification

UHF power transistor BLV935

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

L10 4 turns 1 mm enamelled

copper wire (close wound)

L11, L12 grade 3B Ferroxcube

wideband RF choke
R1, R2 metal film resistor 10 Ω; 0.4 W 2322 151 71009

Notes

1. American Technical Ceramics type 100B or capacitor of same quality.

2. The striplines are on double-clad PCB with PTFE fibre-glass dielectric (εr= 2.2); thickness 1⁄32".

65 nH internal diameter: 4 mm

length: 4 mm
leads: 2 × 5mm

4312 020 36642

1995 Jun 29 7

Philips Semiconductors Product specification

UHF power transistor BLV935

handbook, full pagewidth

70

70

IN

KV9004 KV9005

C10

V

bias

L11

C12

R1

L1 L2 L7 L8

C2

C8

C6 C7

L9 L3 L6 L10

C1

L4 L5

C9

C4

C11

C5

70

70

OUT

V

L12

R2

C13

CC

C3

IN

Dimensions in mm.
The components are located on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections

are made by fixing screws, hollow rivets and copper straps around the board and under the emitters to provide a direct contact between the component
side and the ground plane.

OUT

MLD145

Fig.9 Printed circuit board and component layout for class-AB test circuit (850-980 MHz).

1995 Jun 29 8

Philips Semiconductors Product specification

UHF power transistor BLV935

10

handbook, halfpage

Z

i

(Ω)

8

6

4

2

0

800 840 880 1000

VCE= 26 V; ICQ= 100 mA; PL=30W;
Th=25°C; R

th mb-h

x

r

= 0.3 K/W.

i

i

920 960

MLD146

f (MHz)

Fig.10 Input impedance as a function of frequency

(series components); typical values.

15

handbook, halfpage

Z

L

(Ω)

10

5

0

5

10

800 840 880 920 1000

VCE= 26 V; ICQ= 100 mA; PL=30W;
Th=25°C; R

th mb-h

= 0.3 K/W.

R

L

X

L

MLD147

960

f (MHz)

Fig.11 Load impedance as a function of frequency

(series components); typical values.

12

handbook, halfpage

G

p

(dB)

8

4

0

800 840 880 920 1000

VCE= 26 V; ICQ= 100 mA; PL=30W;
Th=25°C; R

th mb-h

= 0.3 K/W.

Fig.12 Power gain as a function of frequency;

typical values.

960

MLD148

f (MHz)

handbook, halfpage

Fig.13 Definition of transistor impedance.

Z

i

Z

MBA451

L

1995 Jun 29 9

Philips Semiconductors Product specification

UHF power transistor BLV935

PACKAGE OUTLINE

1/1 page = 296 mm (Datasheet)

2.4

1.8

2.4

1.8

3

5

1

15.8 max

10.4
max

3.40

3.05

10.3
max

2.62.6

2

4

3.3

2.8

6

0.13

18.42

4.4

4.0

25

max

2.8

7.2

max

11.0

10.6

MSA025 - 2

27 mm

Dimensions in mm.
Torque on screw: min. 0.6 Nm; max. 0.75 Nm.
Recommended screw: cheese-head 4-40 UNC/2A.
Heatsink compound must be applied sparingly and evenly distributed.

Fig.14 SOT273.

1995 Jun 29 10

Philips Semiconductors Product specification

UHF power transistor BLV935

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1995 Jun 29 11

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127041/500/01/pp12 Date of release: 1995 Jun 29
Document order number: 9397 750 00594