Datasheet BLV934 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV934

UHF power transistor

Product specification

Philips Semiconductors

1995 Apr 11

Philips Semiconductors Product specification

UHF power transistor BLV934

FEATURES

• Internal input matching to achieve high power gain and
easy design of wideband circuits

• Emitter ballasting resistors for an optimum temperature
profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Base station transmitters in the 820 to 960 MHz range.

PINNING - SOT171

PIN SYMBOL DESCRIPTION

1 e emitter
2 e emitter
3 b base
4 c collector
5 e emitter
6 e emitter

DESCRIPTION

NPN silicon planar epitaxial transistor intended for
common emitter class-AB operation. The transistor has
internal input matching by means of MOS capacitors and
is encapsulated in a 6-lead SOT171 flange envelope with
a ceramic cap. All leads are isolated from the flange.

handbook, halfpage

Top view

12345

6

b

MAM141

c

e

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

=25°C in a common emitter test circuit.

h

f

(MHz)

V

(V)

CE

P

(W)

L

G

p

(dB)

η

(%)

C

CW, class-AB 960 26 30 ≥ 9 ≥ 55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1995 Apr 11 2

Philips Semiconductors Product specification

UHF power transistor BLV934

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

collector-base voltage open emitter − 70 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 3V
collector current (DC) − 4A
average collector current − 4A
total power dissipation up to Tmb=25°C − 68 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

thermal resistance from junction to

P

= 68 W; Tmb=25°C 2.57 K/W

tot

mounting base
thermal resistance from mounting

0.4 K/W

base to heatsink

10

handbook, halfpage

I

C

(A)

1

1

10

11010

(1) Tmb=25°C.
(2) Th=70°C.

(2)

Fig.2 DC SOAR.

(1)

VCE(V)

MLC678

80

handbook, halfpage

P

tot

(W)

60

40

20

2

0

0 20 40 60 80 100 120 140

(1) Continuous operation.
(2) Short-time operation during mismatch.

(2)

(1)

MLC679

o

T ( C)

h

Fig.3 Power derating curves.

1995 Apr 11 3

Philips Semiconductors Product specification

UHF power transistor BLV934

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

C

re

Note

1. Measured under pulsed conditions: t

collector-base breakdown

open emitter; IC=20mA 70 −−V

voltage
collector-emitter breakdown

open base; IC=50mA 30 −−V

voltage
emitter-base breakdown

open collector; IE=1mA 3 −−V

voltage
collector leakage current VBE= 0; VCE=28V −−2mA
DC current gain VCE= 10 V; IC= 1.5 A; note 1 30 − 120
collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz − 25 − pF
feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 17 − pF

≤ 500 µs; δ≤0.01.

p

100

handbook, halfpage

h

FE

80

60

40

20

0

0123456

Measured under pulsed conditions; tp≤ 500 µs; δ≤0.01.
(1) VCE=26V.
(2) VCE=10V.

(1)

(2)

Fig.4 DC current gainas a function of collector

current; typical values.

MLC680

IC(A)

100

handbook, halfpage

C

c

(pF)

80

60

40

20

0

01020304050

IE=ie= 0; f = 1 MHz.

Fig.5 Collector capacitance as a function of

collector-base voltage; typical values.

MLC681

VCB(V)

1995 Apr 11 4

Philips Semiconductors Product specification

UHF power transistor BLV934

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter, class-AB test circuit; R

h

th mb-h

= 0.4 K/W.

MODE OF OPERATION

f

(MHz)

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

C

CW, class-AB 960 26 100 30 ≥9 ≥55

Ruggedness in class-AB operation

The BLV934 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases at rated
output power, under the following conditions: V

16

handbook, halfpage

G

p

(dB)

12

8

4

G

p

η

= 26 V; f = 960 MHz; ICQ= 100 mA; Th=25°C; R

CE

MLC682

80

η

(%)

60

40

20

40

handbook, halfpage

P

L

(W)

30

20

10

th mb-h

= 0.4 K/W.

MLC683

0

01020 40

VCE=26V.
ICQ= 100 mA.
f = 960 MHz.

30

P (W)

L

Fig.6 Power gain and efficiency as functions of

load power; typical values.

0

0

0246

VCE=26V.
ICQ= 100 mA.
f = 960 MHz.

P (W)

i

Fig.7 Load power as a function of input power;

typical values.

1995 Apr 11 5

Philips Semiconductors Product specification

,,,,,

UHF power transistor BLV934

handbook, full pagewidth

V

B

input
50 Ω

C8

C1 C13

R1

C6

L13

C7

L1 L2 L3

C2 C3 C4 C11 C12C9

C18

C20

L12

C5 C10

DUT

L4

L11

L5 L6 L7

C15C14 C17

L8 L9 L10

R2

L14

C16 C19

output

50 Ω

MGC325

V

CC

Fig.8 Class-AB test circuit at f = 960 MHz.

List of components (see Figs 8 and 9)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C13 multilayer ceramic chip

43 pF

capacitor; note 1
C2, C3, C11, C12 film dielectric trimmer 1.4 pF to 5.5 pF 2222 809 09001
C4, C5 multilayer ceramic chip

10 pF

capacitor; note 2
C6, C17 multilayer ceramic chip

150 pF

capacitor; note 1
C7, C16 ceramic capacitor 22 nF 2222 640 08223
C8, C19 solid aluminium capacitor 10 µF, 63 V 2222 030 38109
C14 multilayer ceramic chip

20 pF

capacitor; note 1
C9, C10 multilayer ceramic chip

11 pF

capacitor; note 2
C20 multilayer ceramic chip

1nF

capacitor; note 1
C15, C18 multilayer ceramic chip

62 pF

capacitor; note 1
L1 stripline; note 3 50 Ω length 16.8 mm

width 2.4 mm

L2 stripline; note 3 50 Ω length 14.8 mm

width 2.4 mm

L3 stripline; note 3 50 Ω length 13.7 mm

width 2.4 mm

1995 Apr 11 6

Philips Semiconductors Product specification

UHF power transistor BLV934

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

L4 stripline; note 3 43 Ω length 3.5 mm

width 3 mm

L5 stripline; note 3 43 Ω length 6.4 mm

width 3 mm

L6 stripline; note 3 43 Ω length 5.8 mm

width 3 mm

L7 stripline; note 3 43 Ω length 2.4 mm

width 3 mm

L9 stripline; note 3 50 Ω length 15.5 mm

width 2.4 mm

L10 stripline; note 3 50 Ω length 20 mm

width 2.4 mm

L11 4 turns enamelled 0.8 mm

copper wire

L12 3 turns enamelled 0.8 mm

copper wire

L13, L14 grade 3B Ferroxcube

wideband RF choke
R1, R2 metal film resistor 10 Ω; 0.4 W 2322 151 71009

45 nH int. diameter 4mm

length 5 mm
leads 2 × 5mm

30 nH int. diameter 3mm

length 5 mm
leads 2 × 5mm

4312 020 36642

Notes

1. American Technical Ceramics type 100B or capacitor of same quality.

2. American Technical Ceramics type 100A or capacitor of same quality.

3. The striplines are on double-clad PCB with PTFE fibre-glass dielectric (εr= 2.2); thickness 1⁄32".

1995 Apr 11 7

Philips Semiconductors Product specification

UHF power transistor BLV934

handbook, full pagewidth

copper straps

rivets

rivets

copper straps

122

copper straps

rivets

70

rivets

copper straps

C8

C18

L12

C20

C17

C6

C14

C5

C4

L13

C7

L1 L2 L3 L4 L5 L6 L7

C1

C2

Dimensions in mm.
The components are located on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections

are made by fixing screws, hollow rivets and copper straps around the board and under the emitters to provide a direct contact between the component
side and the ground plane.

R1

C3

L14

R2

C15

L11

C10

L8

C9

C11

C19

C16

L9 L10

C13

C12

MGC326

Fig.9 Component layout for 960 MHz class-AB test circuit.

1995 Apr 11 8

Philips Semiconductors Product specification

UHF power transistor BLV934

handbook, halfpage

5

Z

i

(Ω)

4

3

2

1

0

800 840 880 1000

VCE= 26 V; ICQ= 100 mA; PL=30W;
Th=25°C; R

th mb-h

x

r

= 0.4 K/W.

i

i

920 960

MLC684

f (MHz)

Fig.10 Input impedance as a function of frequency

(series components); typical values.

handbook, halfpage

5

Z

L

(Ω)

4

3

2

1

0

800 840 880 920 1000

VCE= 26 V; ICQ= 100 mA; PL=30W;
Th=25°C; R

th mb-h

= 0.4 K/W.

R

L

X

L

MLC685

960

f (MHz)

Fig.11 Load impedance as a function of frequency

(series components); typical values.

12

handbook, halfpage

G

p

(dB)

8

4

0

800 840 880 920 1000

VCE= 26 V; ICQ= 100 mA; PL=30W;
Th=25°C; R

th mb-h

= 0.4 K/W.

Fig.12 Power gain as a function of frequency;

typical values.

960

MLC686

f (MHz)

handbook, halfpage

Fig.13 Definition of transistor impedance.

Z

i

Z

MBA451

L

1995 Apr 11 9

Philips Semiconductors Product specification

UHF power transistor BLV934

PACKAGE OUTLINE

11.5

1
3

5

(2x)

10.5

5.85

2

4

6

25.2
max

18.42

9.3

max

handbook, full pagewidth

9.15

3.25

2.85

2.25
min

1 (2x)

2.25

1.85

3.45

3.15

2.8

6 max

Dimensions in mm.
Torque on screw: min. 0.6 Nm; max. 0.75 Nm.
Recommended screw: cheese-head 4-40 UNC/2A.
Heatsink compound must be applied sparingly and evenly distributed.

Fig.14 SOT171.

(2x)

0.14

4.50

4.05

7.0

max

MBC828 - 1

1995 Apr 11 10

Philips Semiconductors Product specification

UHF power transistor BLV934

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1995 Apr 11 11

Philips Semiconductors – a worldwide company

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SCD38 © Philips Electronics N.V. 1995

SCD38 © Philips Electronics N.V. 1995

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123052/1500/01/pp12 Date of release: 1995 Apr 11
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Philips Semiconductors

Philips Semiconductors