The transistor has a 6-lead flange envelope with a ceramic
cap (SOT-171). All leads are isolated from the flange.
f
MHz
handbook, halfpage
P
L
W
Top view
12345
G
p
dB
6
b
MAM141
Fig.1 Simplified outline and symbol.
η
C
%
c
e
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
March 19932
Page 3
Philips SemiconductorsProduct specification
UHF power transistorBLV93
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
peak valueV
Collector-emitter voltage (open base)V
Emitter-base voltage (open collector)V
Collector current
1. American Technical Ceramics capacitor type 100A or capacitor of same quality.
March 19936
Page 7
Philips SemiconductorsProduct specification
UHF power transistorBLV93
handbook, full pagewidth
R1
copper straps
L10
124 mm
C14
R2
+V
C15
80 mm
CC
L11
L8
C1
L1L3L6
The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the
other side is unetched copper serving as ground plane. Earth connections are made by
fixing screws and copper straps around the board and under the emitters to provide a
direct contact between the copper on the component side and the ground plane.
L2
C5
C4
C3C3
L4
Fig.8 Printed circuit board and component lay-out for 900 MHz class-B test circuit.
The device is capable of withstanding a full load mismatch
(VSWR = 50; all phases) at rated load power up to a supply
voltage of 15,5 V and at Th=25°C.
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
6.81
6.07
0.268
0.239
2.15
1.85
0.085
0.073
b
1
3.20
2.89
0.126
0.114
c
0.16
0.07
0.006
0.003
6
345
b
e
0510 mm
E
E
6.00
5.70
0.236
0.224
e
1
3.58
0.140
C
w
M
C
2
p
w
M
3
scale
F
H
11.31
3.05
10.54
2.54
0.445
0.120
0.415
0.100
B
w
H
1
9.27
9.01
0.365
0.355
1
M
3.43
3.17
0.135
0.125
AB
p
c
E
1
Q
qw
18.42
U
1
24.90
24.63
0.980
0.970
0.236
0.224
Q
4.32
4.11
0.170
0.162
E
w
U
6.00
5.70
2
2
1
w
0.260.51 1.02
0.010.02 0.040.725
3
OUTLINE
VERSION
SOT171A97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
March 199310
ISSUE DATE
Page 11
Philips SemiconductorsProduct specification
UHF power transistorBLV93
DEFINITIONS
Data Sheet Status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 199311
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