Datasheet BLV93 Datasheet (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV93
UHF power transistor
Product specification
March 1993
Page 2
Philips Semiconductors Product specification

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band.

QUICK REFERENCE DATA

R.F. performance at T
MODE OF OPERATION V
=25°C in a common-emitter class-B test circuit
h
CE
V
narrow band; c.w.
12,5 900 8 > 6,5 > 50
9,6 900 6 typ. 6,0 typ. 59

PINNING - SOT171A

PIN SYMBOL DESCRIPTION
1 e emitter 2 e emitter 3 b base 4 c collector 5 e emitter 6 e emitter

FEATURES

multi-base structure and emitter-ballasting resistors for an optimum temperature profile
internal input matching to achieve an optimum wideband capability and high power gain
gold metallization ensures excellent reliability.
The transistor has a 6-lead flange envelope with a ceramic cap (SOT-171). All leads are isolated from the flange.
f
MHz
handbook, halfpage
P
L
W
Top view
12345
G
p
dB
6
b
MAM141
Fig.1 Simplified outline and symbol.
η
C
%
c
e
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
March 1993 2
Page 3
Philips Semiconductors Product specification

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
peak value V Collector-emitter voltage (open base) V Emitter-base voltage (open collector) V Collector current
d.c. or average I
(peak value); f > 1 MHz I Total power dissipation
at T
=67°CP
mb
=67°C; f > 1 MHz P
at T
mb
Storage temperature T Operating junction temperature T
CBOM CEO EBO
; I
C CM
tot(dc) tot(rf) stg j
C AV
max. 36 V max. 16 V max. 3 V
max. 1,6 A max. 4,8 A
max. 18 W max. 24 W
65 to +150 °C max. 200 °C
CE
(V)
MDA422
40
handbook, halfpage
P
tot
(W)
32
24
16
2
10
I Continuous operation II Continuous operation (f > 1 MHz) III Short-time operation during mismatch; (f > 1 MHz)
10
handbook, halfpage
I
C
(A)
1
1
10
110
R
= 0,4 K/W
th mb-h
Th = 60 °C
V
Fig.2 D.C. SOAR.

THERMAL RESISTANCE

Dissipation = 12 W; T
= 112 °C
mb
From junction to mounting base
(d.c. dissipation) R
(r.f. dissipation) R From mounting base to heatsink R
MDA423
III
II
I
8
0
0
50 100
150
Th (°C)
200
Fig.3 Power/temperature derating curves.
th j-mb(dc) th j-mb(rf) th mb-h
max. 7,0 K/W max. 5,2 K/W max. 0,4 K/W
March 1993 3
Page 4
Philips Semiconductors Product specification

CHARACTERISTICS

T
=25°C unless otherwise specified
j
Collector-base breakdown voltage
open emitter; I Collector-emitter breakdown voltage
open base; IC= 40 mA V Emitter-base breakdown voltage
open collector; IE= 2 mA V Collector cut-off current
VBE= 0; VCE= 16 V I Second breakdown energy
L = 25 mH; f = 50 Hz; R D.C. current gain
I
= 1,2 A; VCE= 10 V h
C
Transition frequency at f = 500 MHz
IE= 1,2 A; VCE= 12,5 V f
Collector capacitance at f = 1 MHz
I
= 0; VCB= 12,5 V C
E=ie
Feed-back capacitance at f = 1 MHz
I
= 0; VCE= 12,5 V C
C
Collector-flange capacitance C
= 20 mA V
C
=10 E
BE
(1)
(BR)CBO
(BR)CEO
(BR)EBO
CES
SBR
FE
T
c
re cf
> 36 V
> 16 V
> 3V
< 10 mA
> 2mJ
> 25
typ. 4 GHz
typ. 15 pF
typ. 9 pF typ. 2 pF
Note
1. Measured under pulse conditions: t
100
handbook, halfpage
h
FE
80
V
60
40
20
0
012
CE
Fig.4 Tj=25°C; typical values.
= 50 µs; δ <1%.
p
MDA424
12.5 V
= 10 V
IC (A)
4
3
handbook, halfpage
5
f
T
(GHz)
4
3
2
1
0
0.8 1.6 2.4
0 4
3.2
Fig.5 VCB= 12,5 V; f = 500 MHz; Tj=25°C;
typical values.
MDA425
IE (A)
March 1993 4
Page 5
Philips Semiconductors Product specification
26
handbook, halfpage
C
c
(pF)
22
18
14
10
04 20
81216
MDA426
VCB (V)
Fig.6 IE=ie= 0; f = 1 MHz; typical values.

APPLICATION INFORMATION

R.F. performance in c.w. operation (common-emitter circuit; class-B): f = 900 MHz; T
=25°C.
h
MODE OF OPERATION V
narrow band; c.w.
12,5 8
CE
V
P
L
W
< 1,8 > 6,5 < 1,28 > 50 typ. 1,5 typ. 7,3 typ. 1,1 typ. 58
9,6 6 typ. 1,5 typ. 6,0 typ. 1,05 typ. 59
March 1993 5
P
W
S
G
p
dB
I
C
A
η
C
%
Page 6
Philips Semiconductors Product specification
,,,,,,
handbook, full pagewidth
C1
L1 L2
C5
T.U.T.
L3
L4 L5
L6 L7
C8C6
C12
50 50
C2
C3
C4 C9
L8 L9
R1 L10
C7
C13
L11
R2
C14
C10
C11
C15
Fig.7 Class-B test circuit at f = 900 MHz.
List of components:
C1 = C12 = 33 pF multilayer ceramic chip capacitor C2 = C3 = C10 = C11 = 1,4 to 5,5 pF film dielectric trimmer
(cat. no. 2222 809 09001) C4 = C5 = 4,7 pF multilayer ceramic chip capacitor C6 = C7 = 5,6 pF multilayer ceramic chip capacitor C8 = C9 = 3,3 pF multilayer ceramic chip capacitor
(1) (1) (1)
C13 = 10 pF ceramic feed-through capacitor C14 = 6,8 µF (63 V) electrolytic capacitor C15 = 330 pF ceramic feed-through capacitor L1 = L7 = 50 stripline (29,0 × 2,4 mm) L2 = 50 stripline (6,0 mm × 2,4 mm) L3 = 42,7 stripline (13,1 mm × 3,0 mm) L4 = 42,7 stripline (4,4 mm × 3,0 mm) L5 = 42,7 stripline (4,6 mm × 3,0 mm) L6 = 50 stripline (11,0 × 2,4 mm) L8 = 60 nH; 4 turns closely wound enamelled Cu-wire (0,4 mm); int. dia. 3 mm; leads 2 × 5 mm L9 = 45 nH; 4 turns enamelled Cu-wire (1,0 mm); length 6 mm; int. dia 4 mm; leads 2 × 5 mm L10 = L11 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) R1 = R2 = 10 Ω±10%; 0,25 W, metal film resistor L1 to L7 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric
(ε
= 2,2); thickness1⁄32inch.
r
+V
CC
MBK458
Note
1. American Technical Ceramics capacitor type 100A or capacitor of same quality.
March 1993 6
Page 7
Philips Semiconductors Product specification
handbook, full pagewidth
R1
copper straps
L10
124 mm
C14
R2
+V
C15
80 mm
CC
L11
L8
C1
L1 L3 L6
The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as ground plane. Earth connections are made by fixing screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the ground plane.
L2
C5
C4
C3C3
L4
Fig.8 Printed circuit board and component lay-out for 900 MHz class-B test circuit.
March 1993 7
C6
C7
C13
L9
C8
L7
C9
L5
C12
C11C10
MBK459
Page 8
Philips Semiconductors Product specification
10
handbook, halfpage
P
L
(W)
8
6
4
2
0
01
VCE= 9,6 V; f = 900 MHz; Th=25°C; class-B operation; typical values.
Fig.9 Load power vs. source power.
MDA427
24
3
P
(W)
S
handbook, halfpage
VCE= 9,6 V; f = 900 MHz; Th=25°C; class-B operation; typical values.
8
G
p
(dB)
6
4
2
0
02 10
G
p
η
C
46 8
MDA428
PL (W)
η
80
C
(%) 60
40
20
0
Fig.10 Power gain and efficiency vs. load power.
16
handbook, halfpage
P
L
(W)
12
8
4
0
012
VCE= 12,5 V; f = 900 MHz; Th=25°C; class-B operation; typical values.
Fig.11 Load power vs. source power.
3
P
(W)
S
MDA429
MDA430
10
handbook, halfpage
G
p
(dB)
8
G
6
4
2
4
0
020
VCE= 12,5 V; f = 900 MHz; Th=25°C; class-B operation; typical values.
48
p
η
C
12
16
PL (W)
100
η
C
(%) 80
60
40
20
0
Fig.12 Power gain and efficiency vs. load power.
March 1993 8
Page 9
Philips Semiconductors Product specification

RUGGEDNESS

The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) at rated load power up to a supply voltage of 15,5 V and at Th=25°C.
handbook, halfpage
5
Z
i
()
4
3
2
1
0
800 1000
VCE= 12,5 V; PL= 8 W; f = 800-960 MHz;
=25°C; class-B operation; typical values.
T
h
840 880
920
960
Fig.13 Input impedance (series components).
MDA431
r
i
x
i
f (MHz)
handbook, halfpage
8
Z
L
()
6
4
2
0
2 800 1000
VCE= 12,5 V; PL= 8 W; f = 800-960 MHz;
=25°C; class-B operation; typical values.
T
h
840
880 920
960
Fig.14 Load impedance (series components).
MDA432
R
L
X
L
f (MHz)
10
handbook, halfpage
G
p
(dB)
8
6
4
2
0
800 850 900
VCE= 12,5 V; PL= 8 W; f = 800-960 MHz;
=25°C; class-B operation; typical values.
T
h
Fig.15 Power gain vs. frequency.
950
MDA433
f (MHz)
1000
March 1993 9
Page 10
Philips Semiconductors Product specification

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads SOT171A

D
A
F
D
1
U
1
q
H
1
b
1
2
H
U
2
Db
9.25
9.04
0.364
0.356
1
D
9.30
8.99
0.366
0.354
1
5.95
5.74
0.234
0.226
A
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
6.81
6.07
0.268
0.239
2.15
1.85
0.085
0.073
b
1
3.20
2.89
0.126
0.114
c
0.16
0.07
0.006
0.003
6
345
b
e
0 5 10 mm
E
E
6.00
5.70
0.236
0.224
e
1
3.58
0.140
C
w
M
C
2
p
w
M
3
scale
F
H
11.31
3.05
10.54
2.54
0.445
0.120
0.415
0.100
B
w
H
1
9.27
9.01
0.365
0.355
1
M
3.43
3.17
0.135
0.125
AB
p
c
E
1
Q
qw
18.42
U
1
24.90
24.63
0.980
0.970
0.236
0.224
Q
4.32
4.11
0.170
0.162
E
w
U
6.00
5.70
2
2
1
w
0.260.51 1.02
0.010.02 0.040.725
3
OUTLINE
VERSION
SOT171A 97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
March 1993 10
ISSUE DATE
Page 11
Philips Semiconductors Product specification

DEFINITIONS

Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1993 11
Loading...