Datasheet BLV93 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV93

UHF power transistor

Product specification

March 1993

Philips Semiconductors Product specification

UHF power transistor BLV93

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended
for use in mobile radio transmitters in the 900 MHz
communications band.

QUICK REFERENCE DATA

R.F. performance at T

MODE OF OPERATION V

=25°C in a common-emitter class-B test circuit

h

CE

V

narrow band; c.w.

12,5 900 8 > 6,5 > 50

9,6 900 6 typ. 6,0 typ. 59

PINNING - SOT171A

PIN SYMBOL DESCRIPTION

1 e emitter
2 e emitter
3 b base
4 c collector
5 e emitter
6 e emitter

FEATURES

• multi-base structure and emitter-ballasting resistors for
an optimum temperature profile

• internal input matching to achieve an optimum wideband
capability and high power gain

• gold metallization ensures excellent reliability.

The transistor has a 6-lead flange envelope with a ceramic
cap (SOT-171). All leads are isolated from the flange.

f

MHz

handbook, halfpage

P

L

W

Top view

12345

G

p

dB

6

b

MAM141

Fig.1 Simplified outline and symbol.

η

C

%

c

e

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

March 1993 2

Philips Semiconductors Product specification

UHF power transistor BLV93

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter)

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current

d.c. or average I

(peak value); f > 1 MHz I
Total power dissipation

at T

=67°CP

mb

=67°C; f > 1 MHz P

at T

mb

Storage temperature T
Operating junction temperature T

CBOM
CEO
EBO

; I

C
CM

tot(dc)
tot(rf)
stg
j

C AV

max. 36 V
max. 16 V
max. 3 V

max. 1,6 A
max. 4,8 A

max. 18 W
max. 24 W

−65 to +150 °C
max. 200 °C

CE

(V)

MDA422

40

handbook, halfpage

P

tot

(W)

32

24

16

2

10

I Continuous operation
II Continuous operation (f > 1 MHz)
III Short-time operation during mismatch; (f > 1 MHz)

10

handbook, halfpage

I

C

(A)

1

−1

10

110

R

= 0,4 K/W

th mb-h

Th = 60 °C

V

Fig.2 D.C. SOAR.

THERMAL RESISTANCE

Dissipation = 12 W; T

= 112 °C

mb

From junction to mounting base

(d.c. dissipation) R

(r.f. dissipation) R
From mounting base to heatsink R

MDA423

III

II

I

8

0

0

50 100

150

Th (°C)

200

Fig.3 Power/temperature derating curves.

th j-mb(dc)
th j-mb(rf)
th mb-h

max. 7,0 K/W
max. 5,2 K/W
max. 0,4 K/W

March 1993 3

Philips Semiconductors Product specification

UHF power transistor BLV93

CHARACTERISTICS

T

=25°C unless otherwise specified

j

Collector-base breakdown voltage

open emitter; I
Collector-emitter breakdown voltage

open base; IC= 40 mA V
Emitter-base breakdown voltage

open collector; IE= 2 mA V
Collector cut-off current

VBE= 0; VCE= 16 V I
Second breakdown energy

L = 25 mH; f = 50 Hz; R
D.C. current gain

I

= 1,2 A; VCE= 10 V h

C

Transition frequency at f = 500 MHz

−IE= 1,2 A; VCE= 12,5 V f

Collector capacitance at f = 1 MHz

I

= 0; VCB= 12,5 V C

E=ie

Feed-back capacitance at f = 1 MHz

I

= 0; VCE= 12,5 V C

C

Collector-flange capacitance C

= 20 mA V

C

=10Ω E

BE

(1)

(BR)CBO

(BR)CEO

(BR)EBO

CES

SBR

FE

T

c

re
cf

> 36 V

> 16 V

> 3V

< 10 mA

> 2mJ

> 25

typ. 4 GHz

typ. 15 pF

typ. 9 pF
typ. 2 pF

Note

1. Measured under pulse conditions: t

100

handbook, halfpage

h

FE

80

V

60

40

20

0

012

CE

Fig.4 Tj=25°C; typical values.

= 50 µs; δ <1%.

p

MDA424

12.5 V

= 10 V

IC (A)

4

3

handbook, halfpage

5

f

T

(GHz)

4

3

2

1

0

−0.8 −1.6 −2.4

0 −4

−3.2

Fig.5 VCB= 12,5 V; f = 500 MHz; Tj=25°C;

typical values.

MDA425

IE (A)

March 1993 4

Philips Semiconductors Product specification

UHF power transistor BLV93

26

handbook, halfpage

C

c

(pF)

22

18

14

10

04 20

81216

MDA426

VCB (V)

Fig.6 IE=ie= 0; f = 1 MHz; typical values.

APPLICATION INFORMATION

R.F. performance in c.w. operation (common-emitter circuit; class-B): f = 900 MHz; T

=25°C.

h

MODE OF OPERATION V

narrow band; c.w.

12,5 8

CE

V

P

L

W

< 1,8 > 6,5 < 1,28 > 50
typ. 1,5 typ. 7,3 typ. 1,1 typ. 58

9,6 6 typ. 1,5 typ. 6,0 typ. 1,05 typ. 59

March 1993 5

P

W

S

G

p

dB

I

C

A

η

C

%

Philips Semiconductors Product specification

,,,,,,

UHF power transistor BLV93

handbook, full pagewidth

C1

L1 L2

C5

T.U.T.

L3

L4 L5

L6 L7

C8C6

C12

50 Ω50 Ω

C2

C3

C4 C9

L8 L9

R1 L10

C7

C13

L11

R2

C14

C10

C11

C15

Fig.7 Class-B test circuit at f = 900 MHz.

List of components:

C1 = C12 = 33 pF multilayer ceramic chip capacitor
C2 = C3 = C10 = C11 = 1,4 to 5,5 pF film dielectric trimmer

(cat. no. 2222 809 09001)
C4 = C5 = 4,7 pF multilayer ceramic chip capacitor
C6 = C7 = 5,6 pF multilayer ceramic chip capacitor
C8 = C9 = 3,3 pF multilayer ceramic chip capacitor

(1)
(1)
(1)

C13 = 10 pF ceramic feed-through capacitor
C14 = 6,8 µF (63 V) electrolytic capacitor
C15 = 330 pF ceramic feed-through capacitor
L1 = L7 = 50 Ω stripline (29,0 × 2,4 mm)
L2 = 50 Ω stripline (6,0 mm × 2,4 mm)
L3 = 42,7 Ω stripline (13,1 mm × 3,0 mm)
L4 = 42,7 Ω stripline (4,4 mm × 3,0 mm)
L5 = 42,7 Ω stripline (4,6 mm × 3,0 mm)
L6 = 50 Ω stripline (11,0 × 2,4 mm)
L8 = 60 nH; 4 turns closely wound enamelled Cu-wire (0,4 mm); int. dia. 3 mm; leads 2 × 5 mm
L9 = 45 nH; 4 turns enamelled Cu-wire (1,0 mm); length 6 mm; int. dia 4 mm; leads 2 × 5 mm
L10 = L11 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642)
R1 = R2 = 10 Ω±10%; 0,25 W, metal film resistor
L1 to L7 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric

(ε

= 2,2); thickness1⁄32inch.

r

+V

CC

MBK458

Note

1. American Technical Ceramics capacitor type 100A or capacitor of same quality.

March 1993 6

Philips Semiconductors Product specification

UHF power transistor BLV93

handbook, full pagewidth

R1

copper straps

L10

124 mm

C14

R2

+V

C15

80 mm

CC

L11

L8

C1

L1 L3 L6

The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the
other side is unetched copper serving as ground plane. Earth connections are made by
fixing screws and copper straps around the board and under the emitters to provide a
direct contact between the copper on the component side and the ground plane.

L2

C5

C4

C3C3

L4

Fig.8 Printed circuit board and component lay-out for 900 MHz class-B test circuit.

March 1993 7

C6

C7

C13

L9

C8

L7

C9

L5

C12

C11C10

MBK459

Philips Semiconductors Product specification

UHF power transistor BLV93

10

handbook, halfpage

P

L

(W)

8

6

4

2

0

01

VCE= 9,6 V; f = 900 MHz; Th=25°C;
class-B operation; typical values.

Fig.9 Load power vs. source power.

MDA427

24

3

P

(W)

S

handbook, halfpage

VCE= 9,6 V; f = 900 MHz; Th=25°C;
class-B operation; typical values.

8

G

p

(dB)

6

4

2

0

02 10

G

p

η

C

46 8

MDA428

PL (W)

η

80

C

(%)
60

40

20

0

Fig.10 Power gain and efficiency vs. load power.

16

handbook, halfpage

P

L

(W)

12

8

4

0

012

VCE= 12,5 V; f = 900 MHz; Th=25°C;
class-B operation; typical values.

Fig.11 Load power vs. source power.

3

P

(W)

S

MDA429

MDA430

10

handbook, halfpage

G

p

(dB)

8

G

6

4

2

4

0

020

VCE= 12,5 V; f = 900 MHz; Th=25°C;
class-B operation; typical values.

48

p

η

C

12

16

PL (W)

100

η

C

(%)
80

60

40

20

0

Fig.12 Power gain and efficiency vs. load power.

March 1993 8

Philips Semiconductors Product specification

UHF power transistor BLV93

RUGGEDNESS

The device is capable of withstanding a full load mismatch
(VSWR = 50; all phases) at rated load power up to a supply
voltage of 15,5 V and at Th=25°C.

handbook, halfpage

5

Z

i

(Ω)

4

3

2

1

0

800 1000

VCE= 12,5 V; PL= 8 W; f = 800-960 MHz;

=25°C; class-B operation; typical values.

T

h

840 880

920

960

Fig.13 Input impedance (series components).

MDA431

r

i

x

i

f (MHz)

handbook, halfpage

8

Z

L

(Ω)

6

4

2

0

−2
800 1000

VCE= 12,5 V; PL= 8 W; f = 800-960 MHz;

=25°C; class-B operation; typical values.

T

h

840

880 920

960

Fig.14 Load impedance (series components).

MDA432

R

L

X

L

f (MHz)

10

handbook, halfpage

G

p

(dB)

8

6

4

2

0

800 850 900

VCE= 12,5 V; PL= 8 W; f = 800-960 MHz;

=25°C; class-B operation; typical values.

T

h

Fig.15 Power gain vs. frequency.

950

MDA433

f (MHz)

1000

March 1993 9

Philips Semiconductors Product specification

UHF power transistor BLV93

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads SOT171A

D

A

F

D

1

U

1

q

H

1

b

1

2

H

U

2

Db

9.25

9.04

0.364

0.356

1

D

9.30

8.99

0.366

0.354

1

5.95

5.74

0.234

0.226

A

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

6.81

6.07

0.268

0.239

2.15

1.85

0.085

0.073

b

1

3.20

2.89

0.126

0.114

c

0.16

0.07

0.006

0.003

6

345

b

e

0 5 10 mm

E

E

6.00

5.70

0.236

0.224

e

1

3.58

0.140

C

w

M

C

2

p

w

M

3

scale

F

H

11.31

3.05

10.54

2.54

0.445

0.120

0.415

0.100

B

w

H

1

9.27

9.01

0.365

0.355

1

M

3.43

3.17

0.135

0.125

AB

p

c

E

1

Q

qw

18.42

U

1

24.90

24.63

0.980

0.970

0.236

0.224

Q

4.32

4.11

0.170

0.162

E

w

U

6.00

5.70

2

2

1

w

0.260.51 1.02

0.010.02 0.040.725

3

OUTLINE

VERSION

SOT171A 97-06-28

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

March 1993 10

ISSUE DATE

Philips Semiconductors Product specification

UHF power transistor BLV93

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

March 1993 11