Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D076
BLV920
UHF power transistor
Product specification
Supersedes data of 1995 Apr 10
1997 Nov 17
Page 2
Philips Semiconductors Product specification
UHF power transistor BLV920
FEATURES
• Internal input matching to achieve high power gain and
easy design of wideband circuits
• Emitter ballasting resistors for an optimum temperature
profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Base station transmitters in the 820 to 960 MHz range.
PINNING - SOT171A
PIN SYMBOL DESCRIPTION
1 e emitter
2 e emitter
3 b base
4 c collector
5 e emitter
6 e emitter
DESCRIPTION
NPN silicon planar epitaxial transistor intended for
common emitter class-AB operation. The transistor is
encapsulated in a 6-lead SOT171A flange envelope with a
ceramic cap. All leads are isolated from the flange.
handbook, halfpage
Top view
12345
6
b
MAM141
c
e
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a common emitter test circuit.
h
f
(MHz)
V
(V)
CE
P
(W)
L
G
p
(dB)
η
(%)
C
CW, class-AB 960 26 20 ≥10 ≥ 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Nov 17 2
Page 3
Philips Semiconductors Product specification
UHF power transistor BLV920
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
collector-base voltage open emitter − 70 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 3V
collector current (DC) − 3A
average collector current − 3A
total power dissipation up to Tmb=25°C − 50 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
thermal resistance from junction to
P
= 49 W; Tmb=25°C 3.5 K/W
tot
mounting base
thermal resistance from mounting
0.4 K/W
base to heatsink
10
handbook, halfpage
I
C
(A)
1
1
10
11010
(1) Tmb=25°C.
(2) Th=70°C.
(2)
Fig.2 DC SOAR.
(1)
VCE(V)
MLC669
80
handbook, halfpage
P
tot
(W)
60
(2)
40
(1)
20
2
0
0 20 40 60 80 100 120 140
(1) Continuous operation.
(2) Short-time operation during mismatch.
MLC670
o
T ( C)
h
Fig.3 Power derating curves.
1997 Nov 17 3
Page 4
Philips Semiconductors Product specification
UHF power transistor BLV920
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
Note
1. Measured under pulsed conditions: t
collector-base breakdown
open emitter; IC=15mA 70 −−V
voltage
collector-emitter breakdown
open base; IC=30mA 30 −−V
voltage
emitter-base breakdown
open collector; IE= 0.6 mA 3 −−V
voltage
collector leakage current VBE= 0; VCE=28V −−1.5 mA
DC current gain VCE= 10 V; IC= 1 A; note 1 30 − 120
collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz − 17 − pF
feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 11 − pF
≤ 500 µs; δ≤0.01.
p
100
handbook, halfpage
h
FE
80
60
40
20
0
0123456
Measured under pulsed conditions; tp≤ 500 µs; δ≤0.01.
(1) VCE=26V.
(2) VCE=10V.
(1)
(2)
Fig.4 DC current gainas a function of collector
current; typical values.
MLC671
IC(A)
60
handbook, halfpage
C
c
(pF)
40
20
0
01020304050
IE=ie= 0; f = 1 MHz.
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values.
MLC672
VCB(V)
1997 Nov 17 4
Page 5
Philips Semiconductors Product specification
UHF power transistor BLV920
APPLICATION INFORMATION
RF performance at T
=25°C in a common emitter, class-AB test circuit; R
h
th mb-h
= 0.4 K/W.
MODE OF OPERATION
f
(MHz)
V
(V)
CE
I
CQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
C
CW, class-AB 960 26 50 20 ≥10 ≥55
Ruggedness in class-AB operation
The BLV920 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases at rated
output power, under the following conditions: V
16
handbook, halfpage
G
p
(dB)
12
8
4
G
p
η
= 26 V; f = 960 MHz; ICQ= 50 mA; Th=25°C; R
CE
MLC673
80
η
(%)
60
40
20
30
handbook, halfpage
P
L
(W)
20
10
th mb-h
= 0.4 K/W.
MLC674
0
0102030
VCE=26V.
ICQ=50mA.
f = 960 MHz.
P (W)
L
Fig.6 Power gain and efficiency as functions of
load power; typical values.
0
0
012 43
VCE=26V.
ICQ=50mA.
f = 960 MHz.
P (W)
i
Fig.7 Load power as a function of input power;
typical values.
1997 Nov 17 5
Page 6
Philips Semiconductors Product specification
,,,,,
UHF power transistor BLV920
handbook, full pagewidth
V
B
input
50 Ω
C8
C1 C13
R1
C6
L13
C7
L1 L2 L3
C2 C3 C4 C11 C12C9
C18
C20
L12
C5 C10
DUT
L4
L11
L5 L6 L7
C15C14 C17
L8 L9 L10
R2
L14
C16 C19
output
50 Ω
MGC325
V
CC
Fig.8 Class-AB test circuit at f = 960 MHz.
List of components (see Figs 8 and 9)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C13 multilayer ceramic chip
43 pF
capacitor; note 1
C2, C3, C11, C12 film dielectric trimmer 1.4 pF to 5.5 pF 2222 809 09001
C4, C5 multilayer ceramic chip
10 pF
capacitor; note 2
C6, C17 multilayer ceramic chip
150 pF
capacitor; note 1
C7, C16 ceramic capacitor 22 nF 2222 640 08223
C8, C19 solid aluminium capacitor 10 µF, 63 V 2222 030 38109
C14 multilayer ceramic chip
20 pF
capacitor; note 1
C9, C10 multilayer ceramic chip
11 pF
capacitor; note 2
C20 multilayer ceramic chip
1nF
capacitor; note 1
C15, C18 multilayer ceramic chip
62 pF
capacitor; note 1
L1 stripline; note 3 50 Ω length 16.8 mm
width 2.4 mm
L2 stripline; note 3 50 Ω length 14.8 mm
width 2.4 mm
L3 stripline; note 3 50 Ω length 13.7 mm
width 2.4 mm
1997 Nov 17 6
Page 7
Philips Semiconductors Product specification
UHF power transistor BLV920
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
L4 stripline; note 3 43 Ω length 3.5 mm
width 3 mm
L5 stripline; note 3 43 Ω length 6.4 mm
width 3 mm
L6 stripline; note 3 43 Ω length 5.8 mm
width 3 mm
L7 stripline; note 3 43 Ω length 2.4 mm
width 3 mm
L8 stripline; note 3 50 Ω length 3 mm
width 2.4 mm
L9 stripline; note 3 50 Ω length 15.5 mm
width 2.4 mm
L10 stripline; note 3 50 Ω length 20 mm
width 2.4 mm
L11 4 turns enamelled 0.8 mm
copper wire
L12 3 turns enamelled 0.8 mm
copper wire
L13, L14 grade 3B Ferroxcube
wideband RF choke
R1, R2 metal film resistor 10 Ω, 0.4 W 2322 151 71009
45 nH int. diameter 4mm
length 5 mm
leads 2 × 5mm
30 nH int. diameter 3mm
length 5 mm
leads 2 × 5mm
4312 020 36642
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. The striplines are on double-clad PCB with PTFE fibre-glass dielectric (εr= 2.2); thickness1⁄32".
1997 Nov 17 7
Page 8
Philips Semiconductors Product specification
UHF power transistor BLV920
handbook, full pagewidth
copper straps
rivets
rivets
copper straps
122
copper straps
rivets
70
rivets
copper straps
C8
C18
L12
C20
C17
C6
C14
C5
C4
L13
C7
L1 L2 L3 L4 L5 L6 L7
C1
C2
Dimensions in mm.
The components are located on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections
are made by fixing screws, hollow rivets and copper straps around the board and under the emitters to provide a direct contact between the component
side and the ground plane.
R1
C3
L14
R2
C15
L11
C10
L8
C9
C11
C19
C16
L9 L10
C13
C12
MGC326
Fig.9 Component layout for 960 MHz class-AB test circuit.
1997 Nov 17 8
Page 9
Philips Semiconductors Product specification
UHF power transistor BLV920
10
handbook, halfpage
Z
i
(Ω)
8
6
4
2
0
820 860 900
VCE= 26 V; ICQ= 50 mA; PL=20W;
Th=25°C; R
th mb-h
= 0.4 K/W.
x
i
r
i
MLC675
940 980
f (MHz)
Fig.10 Input impedance as a function of frequency
(series components); typical values.
handbook, halfpage
5
Z
L
(Ω)
4
3
2
1
0
820 860 900 940
VCE= 26 V; ICQ= 50 mA; PL=20W;
Th=25°C; R
th mb-h
= 0.4 K/W.
R
L
X
L
MLC676
f (MHz)
Fig.11 Load impedance as a function of frequency
(series components); typical values.
980
12
handbook, halfpage
G
p
(dB)
8
4
0
820 860 900 940
VCE= 26 V; ICQ= 50 mA; PL=20W;
Th=25°C; R
th mb-h
= 0.4 K/W.
Fig.12 Power gain as a function of frequency;
typical values.
MLC677
f (MHz)
980
handbook, halfpage
Fig.13 Definition of transistor impedance.
Z
i
Z
MBA451
L
1997 Nov 17 9
Page 10
Philips Semiconductors Product specification
UHF power transistor BLV920
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads SOT171A
D
A
F
D
1
U
1
q
H
1
b
1
2
H
U
2
Db
9.25
9.04
0.364
0.356
1
D
9.30
8.99
0.366
0.354
A
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
6.81
6.07
0.268
0.239
2.15
1.85
0.085
0.073
b
1
3.20
2.89
0.126
0.114
c
0.16
0.07
0.006
0.003
456
3
b
e
0 5 10 mm
scale
E
1
5.95
5.74
0.234
0.226
E
1
6.00
5.70
0.236
0.224
e
3.58
0.140
C
w
M
C
2
p
w
M
3
F
H
11.31
3.05
10.54
2.54
0.445
0.120
0.415
0.100
w
H
9.27
9.01
0.365
0.355
B
1
1
M
3.43
3.17
0.135
0.125
AB
p
c
E
1
Q
qw
18.42
U
24.90
24.63
0.980
0.970
1
6.00
5.70
0.236
0.224
Q
4.32
4.11
0.170
0.162
E
w
U
2
2
1
w
0.260.51 1.02
0.010.02 0.040.725
3
OUTLINE
VERSION
SOT171A 97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
1997 Nov 17 10
ISSUE DATE
Page 11
Philips Semiconductors Product specification
UHF power transistor BLV920
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Nov 17 11
Page 12
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© Philips Electronics N.V. 1997 SCA56
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Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 127067/00/02/pp12 Date of release: 1997 Nov 17 Document order number: 9397 750 03093
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