Datasheet BLV92 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV92

UHF power transistor

Product speciﬁcation

March 1993

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV92

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band.

QUICK REFERENCE DATA

R.F. performance at T

MODE OF OPERATION V

narrow band; c.w.

=25°C in a common-emitter class-B test circuit

h

CE

V

f

MHz

12,5 900 4 > 7,5 > 50

9,6 900 3 typ. 7,3 typ. 56

PINNING - SOT171A

PIN SYMBOL DESCRIPTION

1 e emitter 2 e emitter 3 b base 4 c collector 5 e emitter 6 e emitter

FEATURES

• multi-base structure and emitter-ballasting resistors for an optimum temperature profile

• internal input matching to achieve an optimum wideband capability and high power gain

• gold metallization ensures excellent reliability.

The transistor has a 6-lead flange envelope with a ceramic cap (SOT-171). All leads are isolated from the flange.

P

L

W

handbook, halfpage

Top view

12345

G

P

dB

6

MAM141

η

C

%

c

b

e

Fig.1 Simplified outline and symbol.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

March 1993 2

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV92

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter)

peak value V Collector-emitter voltage (open base) V Emitter-base voltage (open collector) V Collector current

d.c. or average I

(peak value); f > 1 MHz I Total power dissipation

at T

=94°CP

mb

= 94 °C; f > 1 MHz P

at T

mb

Storage temperature T Operating junction temperature T

CBOM CEO EBO

C CM

tot(dc) tot(rf) stg j

max. 36 V max. 16 V max. 3 V

max. 0,8 A max. 2,4 A

max. 9 W max. 12 W

−65 to + 150 °C max. 200 °C

CE

(V)

MDA408

20

handbook, halfpage

P

tot

(W)

16

12

8

4

2

10

0

I Continuous operation II Continuous operation (f > 1 MHz) III Short-time operation during mismatch; (f > 1 MHz)

III

II

I

50 100

Fig.3 Power/temperature derating curves.

10

handbook, halfpage

I

C

(A)

1

−1

10

110

R

= 0,4 K/W.

th mb-h

Th = 90 °C

V

Fig.2 D.C. SOAR.

THERMAL RESISTANCE

Dissipation = 6 W; T

= 128 °C

mb

From junction to mounting base

(d.c. dissipation) R

(r.f. dissipation) R From mounting base to heatsink R

th j-mb(dc) th j-mb(rf) th mb-h

MDA409

Th (°C)

200

150

max. 12 K/W max. 9 K/W max. 0,4 K/W

March 1993 3

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV92

CHARACTERISTICS

T

=25°C unless otherwise speciﬁed

j

Collector-base breakdown voltage, open emitter; I Collector-emitter breakdown voltage, open base; I Emitter-base breakdown voltage, open collector; I Collector cut-off current, V

= 0; VCE= 16 V I

BE

Second breakdown energy, L = 25 mH; f = 50 Hz; R D.C. current gain, I Transition frequency at f = 500 MHz Collector capacitance at f = 1 MHz, I Feed-back capacitance at f = 1 MHz, I

= 0,6 A; VCE=10V h

C

(1)

, −IE= 0,6 A; VCE= 12,5 V f

= ie=0;VCB= 12,5 V C

E

= 0; VCE= 12,5 V C

C

Collector-ﬂange capacitance C

Note

1. Measured under pulse conditions: t

=50µs; δ<1%.

p

=10mA V

C

=20mA V

C

= 1 mA V

E

=10Ω E

BE

(BR)CBO (BR)CEO (BR)EBO

CES

SBR

FE

T

c re cf

> 36 V > 16 V > 3V < 5mA > 1mJ > 25

typ. 4 GHz typ. 8 pF typ. 5 pF typ. 2 pF

100

handbook, halfpage

h

FE

80

60

40

20

0

02

12.5 V

V

= 10 V

CE

0.4 0.8 1.2

1.6 IC (A)

Fig.4 Tj=25°C; typical values.

MDA410

handbook, halfpage

5

f

T

(GHz)

4

3

2

1

0

−0.4 −0.8 −1.2

0 −2

−1.6

Fig.5 VCB= 12,5 V; f = 500 MHz; Tj=25°C;

typical values.

MDA411

IE (A)

March 1993 4

Philips Semiconductors Product speciﬁcation

,,,,,,

UHF power transistor BLV92

12

V

CB

MDA412

(V)

16

handbook, halfpage

C

c

(pF)

12

8

4

0

048

Fig.6 IE=ie= 0; f = 1 MHz; typical values.

APPLICATION INFORMATION

R.F. performance in c.w. operation (common-emitter circuit; class-B): f = 900 MHz; T

MODE OF OPERATION V

CE

V

narrow band; c.w. typ. 0,57 typ. 8,5 typ. 0,56 typ. 57

12,5 4

P

L

W

P

S

W

< 0,71 > 7,5 < 0,64 > 50

G dB

P

=25°C.

h

I

C

A

9,6 3 typ. 0,56 typ. 7,3 typ. 0,56 typ. 56

η

C

%

handbook, full pagewidth

March 1993 5

C1

L1 L2

C2

C3

C5

C4 C9

R1 L10

T.U.T.

L3

L8 L9

L4 L5

L6 L7

C7

C13

L11

R2

Fig.7 Class-B test circuit at f = 900 MHz.

C8C6

C14

C10

C12

C11

C15

+V

CC

MDA413

50 Ω50 Ω

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV92

List of components:

C1 = C12 = 33 pF multilayer ceramic chip capacitor C2 = C3 = C10 = C11 = 1,4 to 5,5 pF ﬁlm dielectric trimmer (cat. no. 2222 809 09001) C4 = C5 = 3,9 pF multilayer ceramic chip capacitor C6 = C7 = C8 = C9 = 6,2 pF multilayer ceramic chip capacitor C13 = 10 pF ceramic feed-through capacitor C14 = 6,8 µF (63 V) electrolytic capacitor C15 = 330 pF ceramic feed-through capacitor L1 = 50 Ω stripline (29,5 mm × 2,4 mm) L2 = 50 Ω stripline (5,5 mm × 2,4 mm) L3 = 42,7 Ω stripline (16,8 mm × 3,0 mm) L4 = 42,7 Ω stripline (7,5 mm × 3,0 mm) L5 = 42,7 Ω stripline (2,0 mm × 3,0 mm) L6 = 50 Ω stripline (8,5 mm × 2,4 mm) L7 = 50 Ω stripline (28,0 mm × 2,4 mm) L8 = 60 nH; 4 turns closely wound enamelled Cu-wire (0,4 mm); int. dia. 3 mm; leads 2 × 5 mm L9 = 45 nH; 4 turns enamelled Cu-wire (1,0 mm); length 6 mm; int. dia. 4 mm; leads 2 × 5 mm L10 = L11 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) R1 = R2 = 10 Ω±10%; 0,25 W, metal ﬁlm resistor L1 to L7 are striplines on a double Cu-clad printed circuit board with P.T.F.E. ﬁbre-glass dielectric (ε

thickness1⁄32 inch.

(1)

= 2,2);

r

Note

1. American Technical Ceramics capacitors type 100A or capacitor of same quality.

March 1993 6

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV92

handbook, full pagewidth

R1

copper straps

L10

128 mm

C14

R2

+V

80 mm

CC

C15

L11

L8

C1

The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as ground plane. Earth connections are made by fixing screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the ground plane.

L1 L3 L6

C5

C4

C3C3

L2

Fig.8 Printed circuit board and component lay-out for 900 MHz class-B test circuit.

March 1993 7

C13

L9

C8

C6

L4

L7

C7

C9

L5

C12

C11C10

MDA414

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV92

handbook, halfpage

5

P

L

(W)

4

3

2

1

0

0 0.4

VCE= 9,6 V; f = 900 MHz; Th=25°C; class-B operation; typical values.

Fig.9 Load power vs. source power.

MDA415

0.8 1.6

1.2 PS (W)

4

MDA416

PL (W)

10

handbook, halfpage

G

p

(dB)

8

6

4

2

0

05

VCE= 9,6 V; f = 900 MHz; Th=25°C; class-B operation; typical values.

12

G

p

η

C

3

Fig.10 Power gain and efficiency vs. load power.

100

η

C

(%) 80

60

40

20

0

handbook, halfpage

8

P

L

(W)

6

4

2

0

0 0.4 2

VCE= 12,5 V; f = 900 MHz; Th=25°C; class-B operation; typical values.

0.8 1.2 1.6

MDA417

PS (W)

Fig.11 Load power vs. source power.

March 1993 8

10

handbook, halfpage

G

p

(dB)

8

6

4

2

0

02

VCE= 12,5 V; f = 900 MHz; Th=25°C; class-B operation; typical values.

48

MDA418

G

p

η

C

6

P

(W)

L

Fig.12 Power gain and efficiency vs. load power.

100

η

(%)

80

60

40

20

0

C

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV92

RUGGEDNESS

The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) at rated load power up to a supply voltage of 15,5 V and at Th=25°C.

Z

(Ω)

8

i

6

4

handbook, halfpage

MDA419

r

i

12

handbook, halfpage

Z

L

(Ω)

9

6

3

R

L

X

L

MDA420

2

0

800 840 1000

VCE= 12,5 V; PL= 4 W; f = 800−960 MHz;

=25°C; class-B operation; typical values.

T

h

880 920 960

x

i

Fig.13 Input impedance (series components).

10

handbook, halfpage

G

p

(dB)

8

6

4

2

f (MHz)

MDA421

0

800 840 1000

VCE= 12,5 V; PL= 4 W; f = 800−960 MHz;

=25°C; class-B operation; typical values.

T

h

880 920 960

f (MHz)

Fig.14 Load impedance (series components).

March 1993 9

0

800 850 900

VCE= 12,5 V; PL= 4 W; f = 800−960 MHz;

=25°C; class-B operation; typical values.

T

h

Fig.15 Power gain vs. frequency.

950

f (MHz)

1000

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV92

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads SOT171A

D

A

F

D

1

U

1

q

H

1

b

1

2

H

U

2

Db

9.25

9.04

0.364

0.356

1

D

9.30

8.99

0.366

0.354

1

5.95

5.74

0.234

0.226

A

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

6.81

6.07

0.268

0.239

2.15

1.85

0.085

0.073

b

1

3.20

2.89

0.126

0.114

c

0.16

0.07

0.006

0.003

6

345

b

e

0 5 10 mm

E

1

6.00

5.70

0.236

0.224

e

3.58

0.140

C

w

M

C

2

p

w

M

3

scale

F

H

11.31

3.05

10.54

2.54

0.445

0.120

0.415

0.100

B

w

H

1

9.27

9.01

0.365

0.355

1

M

3.43

3.17

0.135

0.125

AB

p

c

E

1

Q

qw

18.42

U

1

24.90

24.63

0.980

0.970

6.00

5.70

0.236

0.224

Q

4.32

4.11

0.170

0.162

E

w

U

2

1

0.260.51 1.02

0.010.02 0.040.725

w

3

OUTLINE

VERSION

SOT171A 97-06-28

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

March 1993 10

ISSUE DATE

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV92

DEFINITIONS

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

March 1993 11