Datasheet BLV910-P Datasheet (Philips)

DATA SH EET

Product specification

1995 Apr 11

DISCRETE SEMICONDUCTORS

Philips Semiconductors

BLV910

UHF power transistor

1995 Apr 11 2

Philips Semiconductors Product specification

UHF power transistor BLV910

FEATURES

• Internal input matching to achieve high power gain and
easy design of wideband circuits

• Emitter ballasting resistors for an optimum temperature
profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Base station transmitters in the 820 to 960 MHz range.

DESCRIPTION

NPN silicon planar epitaxial transistor intended for
common emitter class-AB operation. The transistor is
encapsulated in a 6-lead SOT171 flange envelope with a
ceramic cap. All leads are isolated from the flange.

PINNING - SOT171

PIN SYMBOL DESCRIPTION

1 e emitter
2 e emitter
3 b base
4 c collector
5 e emitter
6 e emitter

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM141

Top view

e

c

b

12345

6

QUICK REFERENCE DATA

RF performance at T

mb

= 25 °C in a common emitter test circuit.

MODE OF OPERATION

f

(MHz)

V

CE

(V)

P

L

(W)

G

p

(dB)

η

C

(%)

CW, class-AB 960 26 10 ≥11 ≥ 55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1995 Apr 11 3

Philips Semiconductors Product specification

UHF power transistor BLV910

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter − 70 V

V

CEO

collector-emitter voltage open base − 30 V

V

EBO

emitter-base voltage open collector − 3V

I

C

collector current (DC) − 1.5 A

I

C(AV)

average collector current − 1.5 A

P

tot

total power dissipation up to Tmb=25°C − 30 W

T

stg

storage temperature −65 +150 °C

T

j

operating junction temperature − 200 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

thermal resistance from junction to
mounting base

P

tot

= 30 W; Tmb=25°C 5.85 K/W

R

th mb-h

thermal resistance from mounting
base to heatsink

0.4 K/W

Fig.2 DC SOAR.

(1) Tmb=25°C.
(2) Th=70°C.

handbook, halfpage

10

1

10

11010

I

C

(A)

VCE(V)

(1)

MLC658

2

1

(2)

Fig.3 Power derating curves.

(1) Continuous operation.
(2) Short-time operation during mismatch.

handbook, halfpage

0

10

20

30

40

0 20 40 60 80 100 120 140

T ( C)

o

h

P

tot

(W)

(2)

MLC659

(1)

1995 Apr 11 4

Philips Semiconductors Product specification

UHF power transistor BLV910

CHARACTERISTICS

T

j

=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

collector-base breakdown
voltage

open emitter; IC= 5 mA 70 −−V

V

(BR)CEO

collector-emitter breakdown
voltage

open base; IC=15mA 30 −−V

V

(BR)EBO

emitter-base breakdown
voltage

open collector; IE= 0.3 mA 3 −−V

I

CES

collector leakage current VBE= 0; VCE=28V −−0.75 mA

h

FE

DC current gain VCE= 10 V; IC= 0.5 A; 30 − 120

C

c

collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz − 10 − pF

C

re

feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 6 − pF

Fig.4 DC current gainas a function of collector

current; typical values.

(1) VCE= 26 V: measured under pulsed conditions;

t

p

≤ 500 µs; δ<0.01.

(2) VCE=10V.

handbook, halfpage

0

40

60

20

80

100

0 0.5 1.0 1.5 2.0 2.5

h

FE

IC(A)

MLC660

(1)

(2)

Fig.5 Collector capacitance as a function of

collector-base voltage; typical values.

IE=ie= 0; f = 1 MHz.

handbook, halfpage

0

10

40

30

20

01020304050

(pF)

C

c

VCB(V)

MLC661

1995 Apr 11 5

Philips Semiconductors Product specification

UHF power transistor BLV910

APPLICATION INFORMATION

RF performance at T

h

=25°C in a common emitter, class-AB test circuit.

Ruggedness in class-AB operation

The BLV910 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases at rated
output power, under the following conditions: V

CE

= 26 V; f = 960 MHz; ICQ= 25 mA; Tmb=25°C.

MODE OF OPERATION

f

(MHz)

V

CE

(V)

I

CQ

(mA)

P

L

(W)

G

p

(dB)

η

C

(%)

CW, class-AB 960 26 25 10 ≥11 ≥55

Fig.6 Power gain and efficiency as functions of

load power; typical values.

VCE=26V.
ICQ=25mA.
f = 960 MHz.

handbook, halfpage

048 16

0

MLC662

12

16

8

P (W)

L

80

40

60

20

0

4

12

η

(%)

η

G

p

(dB)

G

p

VCE=26V.
ICQ=25mA.
f = 960 MHz.

Fig.7 Load power as a function of input power;

typical values.

handbook, halfpage

0 0.4 0.8 1.61.2

16

12

4

0

8

MLC663

P

L

(W)

P (W)

i

1995 Apr 11 6

Philips Semiconductors Product specification

UHF power transistor BLV910

List of components (see Figs 8 and 9)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C13 multilayer ceramic chip

capacitor; note 1

43 pF

C2, C3, C11, C12 film dielectric trimmer 1.4 pF to 5.5 pF 2222 809 09001
C4, C5 multilayer ceramic chip

capacitor; note 2

10 pF

C6 multilayer ceramic chip

capacitor; note 1

150 pF

C7, C16 ceramic capacitor 22 nF 2222 640 08223
C8, C19 solid aluminium capacitor 10 µF, 63 V 2222 030 38109
C14 multilayer ceramic chip

capacitor; note 1

20 pF

C9, C10 multilayer ceramic chip

capacitor; note 2

8.2 pF

C17 multilayer ceramic chip

capacitor; note 1

220 pF

C15, C18 multilayer ceramic chip

capacitor; note 1

62 pF

L1 stripline; note 3 50 Ω length 17 mm

width 2.4 mm

L2, L3 stripline; note 3 50 Ω length 14 mm

width 2.4 mm

L4 stripline; note 3 43 Ω length 4 mm

width 3 mm

Fig.8 Class-AB test circuit at f = 960 MHz.

handbook, full pagewidth

MLC664

R1

L13

R2

L14

C7

C2 C3 C4 C11 C12C9

C8

C1 C13

C18C6

C5 C10

C15C14 C17

,,,,,

L1 L2 L3

L12

L11

L4

L8 L9 L10

L5 L6 L7
input
50 Ω

output

50 Ω

V

B

C16 C19

V

CC

DUT

1995 Apr 11 7

Philips Semiconductors Product specification

UHF power transistor BLV910

Notes

1. American Technical Ceramics type 100B or capacitor of same quality.

2. American Technical Ceramics type 100A or capacitor of same quality.

3. The striplines are on double-clad PCB with PTFE fibre-glass dielectric (εr= 2.2); thickness1⁄32".

L5, L6 stripline; note 3 43 Ω length 3 mm

width 3 mm

L7 stripline; note 3 43 Ω length 3.4 mm

width 3 mm

L8 stripline; note 3 50 Ω length 6.3 mm

width 2.4 mm

L9 stripline; note 3 50 Ω length 18 mm

width 2.4 mm

L10 stripline; note 3 50 Ω length 15 mm

width 2.4 mm

L11 4 turns enamelled 0.8 mm

copper wire

int. diameter 4mm
length 5 mm
leads 2 × 5mm

L12 3 turns enamelled 0.8 mm

copper wire

int. diameter 3mm
length 5 mm
leads 2 × 5mm

L13, L14 grade 3B Ferroxcube

wideband RF choke

4312 020 36642

R1, R2 metal film resistor 10 Ω, 0.4 W 2322 151 71009

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

1995 Apr 11 8

Philips Semiconductors Product specification

UHF power transistor BLV910

Fig.9 Component layout for 960 MHz class-AB test circuit.

Dimensions in mm.
The components are located on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections

are made by fixing screws, hollow rivets and copper straps around the board and under the emitters to provide a direct contact between the component
side and the ground plane.

handbook, full pagewidth

MLC665

rivets

rivets

rivets

copper straps

copper straps

rivets

copper straps

copper straps

122

70

C1

C2

C3

C4

C5

C6

C7

C8

C9

C10

C11

C12

C13

C14

C15

C16

L1 L2 L3 L4 L5 L6 L7

L8

L9 L10

L11

L12

L13

L14

R1

R2

C17

C18

C19

1995 Apr 11 9

Philips Semiconductors Product specification

UHF power transistor BLV910

Fig.10 Input impedance as a function of frequency

(series components); typical values.

VCE=26V.
ICQ=25mA.
Tmb=25°C.
PL=10W.

handbook, halfpage

800 840 880 1000

10

0

8

MLC666

920 960

6

4

2

Z

i

(Ω)

f (MHz)

x

i

r

i

Fig.11 Load impedance as a function of frequency

(series components); typical values.

VCE=26V.
ICQ=25mA.
Tmb=25°C.
PL=10W.

handbook, halfpage

800 840 880 920 1000

10

0

8

MLC667

960

6

4

2

Z

L

(Ω)

f (MHz)

R

L

X

L

Fig.12 Power gain as a function of frequency;

typical values.

VCE=26V.
ICQ=25mA.
Tmb=25°C.
PL=10W.

handbook, halfpage

800 840 880 920 1000

10

MLC668

960

13

12

11

G

f (MHz)

p

(dB)

Fig.13 Definition of transistor impedance.

handbook, halfpage

MBA451

Z

i

Z

L

1995 Apr 11 10

Philips Semiconductors Product specification

UHF power transistor BLV910

PACKAGE OUTLINE

Fig.14 SOT171.

Dimensions in mm.
Torque on screw: min. 0.6 Nm; max. 0.75 Nm.
Recommended screw: cheese-head 4-40 UNC/2A.
Heatsink compound must be applied sparingly and evenly distributed.

handbook, full pagewidth

MBC828 - 1

1
3

5

6

4

2

1 (2x)

2.25

1.85

(2x)

3.25

2.85

9.15

2.25
min

5.85

11.5

10.5

3.45

3.15

(2x)

2.8

6 max

0.14

4.50

4.05

7.0

max

18.42

25.2
max

9.3

max

1995 Apr 11 11

Philips Semiconductors Product specification

UHF power transistor BLV910

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Semiconductors

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SCD38 © Philips Electronics N.V. 1995

All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.

Philips Semiconductors

Philips Semiconductors – a worldwide company

Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428)

BUENOS AIRES, Tel. [phone], Fax. [phone]

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]

Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]

Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands,

Tel. [phone], Fax. [phone]

Brazil: Rua do Rocio 220 - 5

th

floor, Suite 51,
CEP: 04552-903-SÃO PAULO-SP, Brazil.
P.O. Box 7383 (01064-970).
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS:

Tel. [phone], Fax. [phone]

Chile: Av. Santa Maria 0760, SANTIAGO,

Tel. [phone], Fax. [phone]

Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17,

77621 BOGOTA, Tel. [phone],
Fax. [phone]

Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]

France: 4 Rue du Port-aux-Vins, BP317,

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Tel. [phone], Fax. [phone]

Germany: P.O. Box 10 63 23, 20043 HAMBURG,

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India: Philips INDIA Ltd, Shivsagar Estate, A Block ,

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Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4,

P.O. Box 4252, JAKARTA 12950,
Tel. [phone], Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS S.r.l.,

Piazza IV Novembre 3, 20124 MILANO,
Tel. [phone], Fax. [phone]

Japan: Philips Bldg13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]

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Yongsan-ku, SEOUL, Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,

SELANGOR, Tel. [phone], Fax. [phone]

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Tel. [phone], Fax. [phone]

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Tel. [phone], Fax. [phone]

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Pakistan: Philips Electrical Industries of Pakistan Ltd.,

Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton,
KARACHI 75600, Tel. [phone],
Fax. [phone].

Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

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Rua dr. António Loureiro Borges 5, Arquiparque - Miraflores,
Apartado 300, 2795 LINDA-A-VELHA,
Tel. [phone], Fax. [phone].

Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

South Africa: S.A. PHILIPS Pty Ltd.,

195-215 Main Road Martindale, 2092 JOHANNESBURG,
P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone].

Spain: Balmes 22, 08007 BARCELONA,

Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,

Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. [phone], Fax. [phone]

Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West

Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978,
TAIPEI 100, Tel. [phone], Fax. [phone].

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong,
Bangkok 10260, THAILAND,
Tel. [phone], Fax. [phone].

Turkey:Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors LTD.,

276 Bath Road, Hayes, MIDDLESEX UB3 5BX,
Tel. [phone], Fax. [phone]

United States:811 East Arques Avenue, SUNNYVALE,

CA 94088-3409, Tel. [phone], Fax. [phone]

Uruguay: Coronel Mora 433, MONTEVIDEO,

Tel. [phone], Fax. [phone]

Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,

International Marketing and Sales, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. [phone]

SCD38 © Philips Electronics N.V. 1995

All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.

Printed in The Netherlands

123052/1500/01/pp12 Date of release: 1995 Apr 11
Document order number: 9397 750 00072