Datasheet BLV90 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV90

UHF power transistor

Product specification

February 1996

Philips Semiconductors Product specification

UHF power transistor BLV90

DESCRIPTION

NPN silicon planar epitaxial transistor designed for use in
mobile radio transmitters in the 900 MHz band.

FEATURES

• diffused emitter-ballasting resistors for an optimum
temperature profile.

• gold metallization ensures excellent reliability.

• the device can be applied at rated output power without

an external heatsink when it is mounted on a
printed-circuit board (see Fig.6).

The transistor has a 4-lead envelope with a ceramic cap
(SOT-172D). All leads are isolated from the mounting
base.

QUICK REFERENCE DATA

RF performance at T

a

MODE OF OPERATION

=25°C in a common-emitter class-B circuit.

V

CE

V

f

MHz

(1)

P

W

L

G

p

dB

η

%

Narrow band; CW 12.5 900 1 > 7.5 > 50

9.6 900 1 typ. 7.0 typ. 57

Note

1. Device mounted on a printed-circuit board (see Fig.6).

C

PIN CONFIGURATION

PINNING - SOT172D.

PIN DESCRIPTION

1 emitter

handbook, halfpage

1

2 base
3 collector
4 emitter

2

4

Top view

3

MSB007

Fig.1 Simplified outline. SOT172D.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

February 1996 2

Philips Semiconductors Product specification

UHF power transistor BLV90

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V

CBO
CEO
EBO

Collector current

DC or average I
(peak value); f > 1 MHz I

C
CM

; I

C(AV)

Total power dissipation

f > 1 MHz; Tmb< 105 °CP
Storage temperature T
Operating junction temperature T

tot(rf)
stg
j

max. 36 V
max. 16 V
max. 3 V

max. 0.2 A
max. 0.6 A

max. 3.5 W

−65 to + 150 °C
max. 200 °C

120

MDA389

Tmb (°C)

160

P

tot(rf)
(W)

5

4

3

2

1

0

0

handbook, halfpage

I Continuous RF operation (f > 1 MHz)
II Short-time RF operation during mismatch (f > 1 MHz)

II

I

40 80

Fig.2 Power/temperature curve.

THERMAL RESISTANCE

Dissipation = 2.25 W

From junction to ambient

T

=25°CR

a

(1)

(f > 1 MHz)

th j−a (RF)

max. 60 K/W

From junction to mounting base

T

=25°C(f>1 MHz) R

mb

th j-mb (RF)

max. 19 K/W

Note

1. Device mounted on a printed-circuit board (see Fig.6).

February 1996 3

Philips Semiconductors Product specification

UHF power transistor BLV90

CHARACTERISTICS

T

=25°C unless otherwise specified

j

Collector-base breakdown voltage

open emitter; I

Collector-emitter breakdown voltage

open base; IC= 10 mA V

Emitter-base breakdown voltage

open collector; IE= 0.5 mA V

Collector cut-off current

VBE= 0; VCE= 16 V I

Second breakdown energy

L = 25 mH; f = 50 Hz; R

D.C. current gain

I

= 0.15 A; VCE= 10 V h

C

Collector capacitance at f = 1 MHz

I

= 0; VCB= 12.5 V C

E=ie

Feedback capacitance at f = 1 MHz

I

= 0; VCE= 12.5 V C

C

Collector-mounting base capacitance C

= 2.5 mA V

C

=10Ω E

BE

(BR)CBO

(BR)CEO

(BR)EBO

CES

SBR

FE

c

re
c-mb

> 36 V

> 16 V

> 3V

< 1mA

> 0.3 mJ

> 25

typ. 1.8 pF

typ. 1.0 pF
typ. 0.5 pF

120

handbook, halfpage

h

FE

80

40

0

0

V

12.5 V
10 V

150

300 600450

IC (mA)

Fig.3 Tj=25°C; typical values.

MDA390

CE

12

V

CB

MDA391

(V)

16

handbook, halfpage

=

4

C

c

(pF)

3

2

1

0

048

Fig.4 IE=ie= 0; f = 1 MHz; typical values.

February 1996 4

Philips Semiconductors Product specification

UHF power transistor BLV90

APPLICATION INFORMATION

RF performance in CW operation (common-emitter circuit, class-B): f = 900 MHz; T

=25°C

a

MODE OF OPERATION

V

CE

V

P

L

W

G
dB

p

η

C

%

narrow band; CW 12.5 1 > 7.5 > 50

typ. 9.0 typ. 60

9.6 1 typ. 7.0 typ. 57

handbook, full pagewidth

R1

C1

L8

L2

C2

C4

L1

C3 C8

T.U.T.

L3

L4

C5 C6

L5

L9

R2

C7

L6 L7

MDA392

C9

+V

CC

C10

Fig.5 Class-B test circuit at f = 900 MHz.

List of components:

C1 = C10 = 33 pF multilayer ceramic chip capacitor
C2 = C9 = 1.4 to 5.5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C3 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002)
C4 = 5.6 pF multilayer ceramic chip capacitor

(1)

C5 = 10 pF multilayer ceramic chip capacitor
C6 = 330 pF multilayer ceramic chip capacitor
C7 = 3.9 pF multilayer ceramic chip capacitor

(1)

C8 = 1.2 to 3.5 pF film dielectric trimmer (cat. no. 2222 809 05001)
L1 = L7 = 50 Ω stripline (30.8 mm × 2.4 mm)
L2 = 60 nH; 4 turns closely wound enamelled Cu wire (0.4 mm); int. dia. 3 mm; leads 2 × 5 mm
L3 = 38 Ω stripline (16.0 mm × 3.5 mm)
L4 = 38 Ω stripline (11.0 mm × 3.5 mm)
L5 = 280 nH; 15 turns closely wound enamelled Cu wire (0.4 mm); int. dia. 3 mm; leads 2 × 5 mm
L6 = 50 Ω stripline (41.2 mm × 2.4 mm)
L8 = L9 = Ferroxcube wideband HF choke, grade 3B (cat. no. 4312 020 36642)
R1 = R2 = 10 Ω ± 5%; 0.25 W metal film resistor
L1, L3, L4, L6 and L7 are striplines on a double Cu-clad printed-circuit board with P.T.F.E. fibre-glass dielectric

(ε

= 2.2); thickness1⁄32 inch; thickness of copper-sheet 2 × 35 µm.

r

50 Ω50 Ω

Notes

1. American Technical Ceramics capacitor type 100A or capacitor of same quality.

2. Device mounted on a printed-circuit board (see Fig.6).
February 1996 5

Philips Semiconductors Product specification

UHF power transistor BLV90

handbook, full pagewidth

C1

L2

C2

copper straps

L8

R1

C3

160 mm

M2

C5

E

L4L3

BC

E

80 mm

rivets

+V

CC

L9

C6

R2

L5

C7

L6L1

C8 C9

L7

C10

The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side
is unetched copper serving as groundplane. Earth connections are made by hollow rivets and
also by fixing-screws and copper straps around the board and under the emitters to provide a
direct contact between the copper on the component side and the groundplane.

Fig.6 Printed-circuit board and component lay-out for 900 MHz class-B test circuit.

February 1996 6

MDA393

Philips Semiconductors Product specification

UHF power transistor BLV90

1.6

handbook, halfpage

P

L

(W)

1.2

0.8

0.4

0

0 0.1

f = 900 MHz; class-B operation; typical values.

 Tmb= 25 °C; VCE= 12.5 V;

− − − − T

- - - - T

=25°C; VCE= 12.5 V;

a

=25°C; VCE= 9.6 V

a

0.2 0.3

MDA394

PS (W)

Fig.7 Load power as a function of source power.

1.2

MDA395

PL (W)

12

handbook, halfpage

G

p

(dB)

G

8

4

0

0

f = 900 MHz; class-B operation; typical values.

 Tmb= 25 °C; VCE= 12.5 V;

− − − − T

a

=25°C; VCE= 9.6 V

- - - - T

a

p

η

C

0.4

=25°C; VCE= 12.5 V;

0.8 1.6

Fig.8 Power gain and efficiency as a function of

load power.

120

η

(%)

80

40

0

C

RUGGEDNESS

The device is capable to withstand a full load mismatch
(VSWR = 50; all phases) at rated load power up to a
supply voltage of 15.5 V at Ta=25°C. Device mounted on
a printed-circuit board (see Fig.6).

February 1996 7

Philips Semiconductors Product specification

UHF power transistor BLV90

handbook, halfpage

8

Z

i

(Ω)

6

4

2

0

−2
800 1000

VCE= 12.5 V; PL= 1 W; f = 800 - 960 MHz;

=25°C; class-B operation; typical values.

T

mb

840

880 920

Fig.9 Input impedance (series components).

960

MDA396

r

i

x

i

f (MHz)

25

handbook, halfpage

Z

L

(Ω)

23

21

19

17

15

800 1000

VCE= 12.5 V; PL= 1 W; f = 800 - 960 MHz;

=25°C; class-B operation; typical values.

T

mb

840

880 920

960

Fig.10 Load impedance (series components).

MDA397

X

L

R

L

f (MHz)

950

MDA563

f (MHz)

12

handbook, halfpage

G

p

(dB)

8

4

0

800

VCE= 12.5 V; PL= 1 W; f = 800 - 960 MHz;

=25°C; class-B operation; typical values.

T

mb

850

900 1000

Fig.11 Power gain as a function of frequency.

February 1996 8

Philips Semiconductors Product specification

UHF power transistor BLV90

PACKAGE OUTLINE

Studless ceramic package; 4 leads SOT172D

D

A

Q

D

1

H
b

c

4

b

1

H

1

2

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

3.71

2.89

0.146

0.114

3.31

3.04

0.13

0.12

0.035

0.025

b

0.89

0.63

c

Db

D

H

1

5.20

0.16

4.95

0.10

0.205

0.006

0.195

0.004

5.33

5.08

0.210

0.200

1

26.17

24.63

1.03

0.97

Q

1.15

0.88

0.045

0.035

3

OUTLINE
VERSION

SOT172D

IEC JEDEC EIAJ

REFERENCES

February 1996 9

EUROPEAN

PROJECTION

ISSUE DATE

97-06-28

Philips Semiconductors Product specification

UHF power transistor BLV90

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

February 1996 10