Datasheet BLV897 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV897

UHF push-pull power transistor

Preliminary specification
Supersedes data of 1997 Oct 03

1997 Nov 10

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV897

FEATURES

• Internal input matching for an optimum wideband
capability and high gain

• Polysilicon emitter ballasting resistors for an optimum
temperature profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Common emitter class-AB operation in base stations in
the 800 to 960 MHz frequency band.

DESCRIPTION

NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT324B
4-lead rectangular flange package with a ceramic cap.
The common emitters are connected to the flange.

PINNING - SOT324B

PIN SYMBOL DESCRIPTION

1 c1 collector 1
2 c2 collector 2
3 b1 base 1
4 b2 base 2
5 e common emitters connected to

flange

handbook, halfpage

12

b1

Top view

3

5

4

b2

MAM217

Fig.1 Simplified outline and symbol.

c1

e

c2

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

=25°C in a common emitter push-pull test circuit.

h

f

(MHz)

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

(dB)

p

η

C

(%)

d

3

(dBc)

CW, class-AB 900 24 2 × 80 30 ≥10 ≥45 −

2-tone, class-AB 900 24 2 × 80 30 (PEP) ≥11 ≥35 <−32; typ. −37

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Nov 10 2

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV897

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

Note

1. Total device; both sections equally loaded.

collector-base voltage open emitter − 70 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 3V
collector current (DC) − 5A
average collector current − 5A
total power dissipation Tmb=25°C; note 1 − 97 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

thermal resistance from junction to mounting base P

= 97 W; note 1 1.79 K/W

tot

thermal resistance from mounting base to heatsink note 1 0.4 K/W

Note

1. Total device; both sections equally loaded.

CHARACTERISTICS

Values apply to either transistor section; T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

C

c

collector-base breakdown voltage IC= 15 mA; IE=0 70 −−V
collector-emitter breakdown voltage IC= 30 mA; IB=0 30 −−V
emitter-base breakdown voltage IE= 0.6 mA; IC=0 3 −−V
collector-base leakage current VCB= 28 V; VBE=0 −−1.5 mA
DC current gain VCE= 10 V; IC=1A 30 − 120
collector capacitance VCB= 24 V; IE=ie= 0; f = 1 MHz − 18 − pF

1997 Nov 10 3

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV897

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter push-pull class-AB test circuit.

h

MODE OF

OPERATION

f

(MHz)

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

C

d

3

(dBc)

CW, class-AB 900 24 2 × 80 30 ≥10 ≥45 −

2-tone, class-AB 900 24 2 × 80 30 (PEP) ≥11 ≥35 <−32; typ. −37

Ruggedness in class-AB operation

The BLV897 is capable of withstanding a load mismatch corresponding to VSWR =5:1 through all phases under the
conditions: V

= 24 V; ICQ=2×80 mA; f = 900 MHz; Th=25°C; PL= 30 W. The transistor is also capable of

CE

withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases at PL= 30 W (PEP).

50

handbook, halfpage

P

L

(W)

40

30

20

10

MBK287

14

handbook, halfpage

G

p

(dB)

12

10

8

6

4

2

G

p

η

C

MBK286

70

η

C

(%)

60

50

40

30

20

10

0

012 65

VCE= 24V; ICQ=2×80 mA; f= 900 MHz.

4

3

PD (W)

Fig.2 Load power as a function of drive power;

typical values.

1997 Nov 10 4

0

01020

VCE= 24 V; ICQ=2×80 mA; f = 900 MHz.

30

40 50

PL (W)

Fig.3 Power gain and collector efficiency as

functions of load power; typical values.

0

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV897

handbook, full pagewidth

L12

R3

V

BB

C6

R1

C8

C12 C14 C16

C10

C20

C18

L14

L20

L18

L22

L10

L8

L6

L16

R6

C22

C24

+V

CC

L1

input
50 Ω

C5

V

BB

R4

L2

L3

R2

L13

C1

C2

C9

C7

L4

C4 C3

L5

L7

L9

L11

L15

C11 C13 C15

DUT

L21

L19

C17

C25

L23

C19

L24 L26

C26

L25 L27

R5

L17

C28

C27

C29

C21

C23

L28

L29

L30

+V

CC

MGM146

output

50 Ω

Fig.4 Class-AB test circuit at 900 MHz.

1997 Nov 10 5

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV897

List of components

COMPONENT DESCRIPTION VALUE DIMENSIONS

C1, C2 multilayer ceramic chip capacitor;

note 1
C3, C27 Tekelec trimmer (type 37271) 0.6 to 4.5 pF
C4, C25 multilayer ceramic chip capacitor;

note 1
C5, C6, C13, C14,

C19, C20, C21, C22
C7, C8, C23, C24 tantalum SMD capacitor 10 µF; 35 V
C9, C10 multilayer ceramic chip capacitor 100 nF; 50 V 2222 581 76641
C11, C12 multilayer ceramic chip capacitor 10 nF; 50 V 2222 581 76627
C15, C16, C17, C18 multilayer ceramic chip capacitor;

C26 multilayer ceramic chip capacitor;

C28, C29 multilayer ceramic chip capacitor;

L1, L3, L28, L30 stripline; note 2 50 Ω 57.1 × 3mm
L2, L29 semi-rigid cable; note3 50 Ω ext. conductor

L4, L5 stripline; note 2 18 × 2.6 mm
L6, L7 stripline; note 2 2 × 15 mm
L8, L9 stripline; note 2 4.8 × 15 mm
L10, L11 stripline; note 2 3 × 31.5 mm
L12, L13, L16, L17 Ferroxcube chip-bead grade 4S2 4330 030 36300
L14, L15 microchoke 470 nH 4322 057 04771
L18, L19 4 turns enamelled 1 mm copper

L20, L21 stripline; note 2 3 × 24 mm
L22, L23 stripline; note 2 7.5 × 20 mm
L24, L25 stripline; note 2 8.5 × 3mm
L26, L27 stripline; note 2 11 × 3mm
R1, R2, R5, R6 metal film resistor 5.11 Ω; 0.4 W 2322 151 75118
R3, R4 metal film resistor 4.7 Ω; 0.4 W 2322 151 77508

multilayer ceramic chip capacitor;

note 1

note 1

note 1

note 1

wire

47 pF; 500 V

5.6 pF; 500 V

300 pF; 200 V

39 pF; 500 V

2.7 pF; 500 V

27 pF; 500 V

length 57.1 mm,
ext. dia. 2.2 mm

int. dia. 6 mm,
close wound

CATALOGUE

No.

Notes

1. American Technical Ceramics type 100B or capacitor of same quality.

2. The striplines are on a double copper-clad printed-circuit board: PTFE microfibre-glass dielectric (ε
1/32 inch; thickness of the copper sheet 2 x 35 µm.

3. Semi-rigid cables L2 and L29 are soldered on the striplines L1 and L30.

1997 Nov 10 6

= 2.2); thickness

r

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV897

handbook, full pagewidth

58 60.5

80

C12

C10

C14

+V

+V

C4
C3

C18

L20

C25

L21

C17

C8

C6

C5

L12

R1

C1

C2

R2

L13

C7

BB

R3

L1
L2

L3

R4

BB

C16
L14

L10

L8

L6

L4
L5

L7

L9

L11

L15
C15

C13

C9

C11

L22

L23

L18

L19

C20

C19

L24

L25

C22

L16

R6

C26

C27

R5

L17

C21

L26
L27

C24

C28

C29

C23

+V

+V

CC

L28

L29
L30

CC

MGM147

80

Dimensions in mm.
The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

Fig.5 Printed-circuit board for the 900 MHz class-AB test circuit.

1997 Nov 10 7

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV897

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT324B

D

A

5

F

U

1

q

1

L

U

2

A

L

3

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

mm

A

4.37

3.55

b

1.66

1.39

cD

8.69

0.13

8.07

0.07

EF L p q

6.91

1.66

6.29

1.39

UNIT

2

p

4

3.43

3.17

w

scale

Q

2.32

2.00

2

b

s

0 5 10 mm

5.59

4.57

B

C

M

C

w

1

s

1.66

1.39

M

AB

U

19.03

18.77

c

E

Q

U

w

2

1

6.43

6.17

w

1

2

0.5114.22

1.02

OUTLINE

VERSION

SOT324B 97-06-05

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

1997 Nov 10 8

ISSUE DATE

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV897

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Nov 10 9

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV897

NOTES

1997 Nov 10 10

Philips Semiconductors Preliminary specification

UHF push-pull power transistor BLV897

NOTES

1997 Nov 10 11

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Printed in The Netherlands 127067/00/02/pp12 Date of release: 1997 Nov 10 Document order number: 9397 750 02952