Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D099
BLV861
UHF linear push-pull power
transistor
Product specification
Supersedes data of 1998 Jan 14
1998 Jan 16
Page 2
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV861
FEATURES
• Double stage internal input and output matching
networks for an optimum wideband capability and
high gain
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Common emitter class-AB output stages of television
transmitter amplifiers (sound and vision) operating in
bands 4 and 5 (470 to 860 MHz).
DESCRIPTION
NPN silicon planar epitaxial transistor with two sections in
push-pull configuration. The device is encapsulated in a
SOT289A 4-lead rectangular flange package, with a
ceramic cap.
PINNING
PIN SYMBOL DESCRIPTION
1 c1 collector 1; note 1
2 c2 collector 2; note 1
3 b1 base 1
4 b2 base 2
5 e common emitters; note 2
Notes
1. Collectors c1 and c2 are internally connected.
2. Common emitters are connected to the flange.
handbook, halfpage
Top view
12
5
34
b1
b2
MAM374
c1
c2
e
Fig.1 Simplified outline (SOT289A) and symbol.
QUICK REFERENCE DATA
RF performance at T
MODE OF
OPERATION
=25°C in a common emitter push-pull test circuit.
h
f
(MHz)
V
(V)
CE
P
(W)
L
G
(dB)
p
η
C
(%)
∆G
(dB)
p
CW class-AB 860 28 100 ≥8.5 ≥55 ≤1
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Jan 16 2
Page 3
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV861
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
collector-base voltage open emitter − 65 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 3V
collector current (DC) − 15 A
total power dissipation Tmb=25°C − 220 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
thermal resistance from junction to mounting base P
= 220 W; note 1 0.8 K/W
tot
thermal resistance from mounting base to heatsink 0.2 K/W
Note
1. Thermal resistance is determined under specified RF operating conditions.
CE
(V)
MGK766
2
2
10
handbook, halfpage
I
C
(A)
10
1
11010
Total device; both sections equally loaded.
(1) Tmb=25°C.
(2) Th=70°C.
(1)
(2)
V
Fig.2 DC SOAR.
1998 Jan 16 3
Page 4
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV861
CHARACTERISTICS
Values apply to either transistor section; T
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
∆h
FE
C
c
collector-base breakdown voltage IE= 0; IC=35mA 65 −−V
collector-emitter breakdown voltage IB= 0; IC=90mA 30 −−V
emitter-base breakdown voltage IE= 2 mA; IC=0 3 −−V
collector-base leakage current VCB=28V −−3mA
DC current gain IC= 2.8 A; VCE=10V 30 − 120 −
DC current gain ratio of both sections IC= 4.5 A; VCE= 10 V 0.67 − 1.5 −
collector capacitance IE=ie= 0; VCE=28V;
Note
1. The value of C
is that of the die only; it is not measurable because of the internal matching network.
c
=25°C unless otherwise specified.
j
f = 1 MHz; note 1
− 47 − pF
APPLICATION INFORMATION
RF performance at T
MODE OF OPERATION
=25°C in a common emitter push-pull class-AB test circuit.
h
f
(MHz)
V
(V)
CE
I
CQ
(A)
P
(W)
L
G
p
(dB)
η
(%)
C
∆G
p
(dB)
CW class-AB 860 28 0.1 100 ≥8.5 ≥55 ≤1
Ruggedness in class-AB operation
The BLV861 is capable of withstanding a load mismatch corresponding to VSWR =3:1 through all phases under the
conditions: T
=25°C; f = 860 MHz; VCE= 28 V; ICQ= 0.1 A; PL= 100 W; R
h
th mb-h
= 0.2 K/W.
1998 Jan 16 4
Page 5
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV861
16
handbook, halfpage
G
p
(dB)
12
G
p
8
4
0
0 40 80 160120
Th=25°C; f = 860 MHz; VCE= 28 V; ICQ= 0.1 A.
η
C
PL (W)
Fig.3 Power gain and collector efficiency as
functions of load power; typical values.
MGK768
80
60
40
20
0
η
(%)
150
handbook, halfpage
C
P
L
(W)
100
50
0
010 30
Th=25°C; f = 860 MHz; VCE= 28 V; ICQ= 0.1 A.
20
MGK769
PD (W)
Fig.4 Load power as a function of drive power;
typical values.
P
o sync
d
3
d
5
MGK770
−20
handbook, halfpage
d
im
(dB)
−30
−40
−50
−60
0 200100 300 400
Th=25°C; VCE=28V; ICQ= 0.1 A;
2-tone:
= 855.25 MHz (−8 dB);
f
vision
= 859.68 MHz (−16 dB).
f
sideband
Fig.5 Intermodulation distortion as a function of
output power; typical values.
(dB)
P
o sync
MGK771
(W)
−20
handbook, halfpage
d
im
(dB)
−30
−40
−50
−60
0 200100 15050 250
Th=25°C; VCE=28V; ICQ= 0.1 A;
3-tone:
= 855.25 MHz (−8 dB);
f
vision
= 859.68 MHz (−16 dB);
f
sideband
= 860.75 MHz (−10 dB).
f
sound
Fig.6 Intermodulation distortion as a function of
output power; typical values.
1998 Jan 16 5
Page 6
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV861
handbook, full pagewidth
50 Ω
input
V
C1
bias
C2 C3
R1
R2
C4
V
bias
B1
L1
R4
R3
C14
L2
L3
TR3
P1
TR2
L4
TR1
C6C5
L5
R5
C15
L6
L7
VCE = 28 V
C9C8C7
C10 C11 C12
B2
L8
VCE = 28 V
C13
50 Ω
output
MGK775
Fig.7 Class-AB test circuit at 860 MHz.
1998 Jan 16 6
Page 7
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV861
handbook, full pagewidth
70
TR2
140
R3R4R5
C14
P1
C15
TR3
V
CE
X2X1
B1
50 Ω
input
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE-glass board (TLX8) from Taconic, the other side is unetched and serves as a ground
plane. Earth connections from the component side to the ground plane are made by through metallization.
C1
R1
R2
C2
C3
C4
C5
C6
TR1
C7
C8
C9
C10
C11
C12
C13
B2
MGK776
50 Ω
output
Fig.8 Printed-circuit board and component layout for the 860 MHz class-AB test circuit.
1998 Jan 16 7
Page 8
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV861
List of components
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C13 multilayer ceramic chip capacitor; note 1 15 pF
C2, C11, C15 multilayer ceramic chip capacitor 15 nF 0805 2222 590 16629
C3, C12 multilayer ceramic chip capacitor 100 nF 1206 2222 581 16641
C4, C10 solid aluminium capacitor 100 µF; 40 V 2222 031 37101
C5 multilayer ceramic chip capacitor; note 2 8.2 pF
C6 multilayer ceramic chip capacitor +
Tekelek trimmer; note 2
C7 multilayer ceramic chip capacitor; note 3 10 pF
C8 multilayer ceramic chip capacitor; note 3 2.7 pF
C9 multilayer ceramic chip capacitor; note 2 3 pF
C14 multilayer ceramic chip capacitor; note 1 100 nF
L1, L8 stripline; note 4 46 × 1.8 mm
L2, L3 stripline; note 4 20 × 5mm
L4, L5 stripline; note 4 10 × 10 mm
L6, L7 stripline; note 4 21 × 5mm
B1 semi rigid coax balun UT70-25 Z = 25 Ω±1.5 Ω 46 mm
B2 semi rigid coax balun UT70-25 Z = 25 Ω±1.5 Ω 46 mm
R1, R2, R4 SMD resistor 1 Ω 0805 2122 118 04562
R3 SMD resistor 47 Ω 0805 2122 118 04598
R5 SMD resistor 1.2 kΩ 0805 2122 118 04579
P1 potentiometer 4.7 kΩ
X1, X2 copper ribbon hairpin
TR1 NPN push-pull RF transistor BLV861 9340 542 40112
TR2, TR3 NPN transistor BD139 9330 912 20112
10 pF;
0.6 to 4.5 pF
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. American Technical Ceramics type 180R or capacitor of same quality.
4. The striplines are on a double copper-clad printed-circuit board: PTFE-glass material (TLX8) from Taconic
(ε
= 2.55); thickness 0.5 mm.
r
1998 Jan 16 8
Page 9
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV861
handbook, halfpage
5
Z
i
(Ω)
4
3
2
1
0
400 600 800500 700 900
Th=25°C; VCE= 28 V; ICQ= 0.1 A; PL= 100 W (total device).
MGK772
f (MHz)
r
i
x
Fig.9 Input impedance (per section) as a function
of frequency (series components);
typical values.
handbook, halfpage
i
8
Z
L
(Ω)
6
4
2
0
−2
−4
−6
400 600 800500 700 900
Th=25°C; VCE= 28 V; ICQ= 0.1 A; PL= 100 W (total device).
MGK773
f (MHz)
R
L
X
L
Fig.10 Load impedance (per section) as a function
of frequency (series components);
typical values.
12
handbook, halfpage
G
p
(dB)
10
8
6
4
2
0
400 600 800 900
Th=25°C; VCE= 28 V; ICQ= 0.1 A; PL= 100 W (total device).
500 700
f (MHz)
Fig.11 Power gain and collector efficiency as
functions of frequency; typical values.
MGK774
η
C
G
60
η
C
(%)
50
p
40
30
20
10
0
handbook, halfpage
Z
i
Z
MBA451
L
Fig.12 Definition of transistor impedance.
1998 Jan 16 9
Page 10
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV861
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads SOT289A
D
A
F
5
U
1
q
H
1
1
U
H
2
A
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
3.33
3.07
c
0.10
0.05
0.004
0.002
Db
13.10
12.90
0.516
0.508
UNIT
mm
inches
A
4.65
3.92
0.183
0.154
0.131
0.121
3
b
e
F
e
EU
11.53
11.33
0.454
0.446
4.60
0.181
1.65
1.40
0.065
0.055
w
2
4
w
0 5 10 mm
scale
H
H
19.81
4.85
19.05
4.34
0.780
0.191
0.750
0.171
C
M
C
2
M
3
p
1
3.43
3.17
0.135
0.125
B
Q
2.31
2.06
0.091
0.081
c
p
w
M
AB
1
Q
qw
U
1
28.07
21.44
27.81
1.105
1.095
w
2
11.81
11.56
0.465
0.455
E
w
3
2
1
0.250.51 1.02
0.010.02 0.040.844
OUTLINE
VERSION
SOT289A 97-06-28
IEC JEDEC EIAJ
REFERENCES
EUROPEAN
PROJECTION
1998 Jan 16 10
ISSUE DATE
Page 11
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV861
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jan 16 11
Page 12
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© Philips Electronics N.V. 1998 SCA57
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Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 127047/00/05/pp12 Date of release: 1998 Jan 16 Document order number: 9397 750 03212
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