Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV859
UHF linear push-pull power
transistor
Product specification
Supersedes data of 1995 Oct 04
1996 Jul 26
Page 2
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
FEATURES
• Double internal input and output matching for an
optimum wideband capability and high gain
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATION
• Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.
DESCRIPTION
NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT262B
4-lead rectangular flange package, with two ceramic caps.
It delivers a P
= 20 W in class-A operation at
o sync
860 MHz and a supply voltage of 25 V.
QUICK REFERENCE DATA
RF performance at T
=25°C in a common emitter push-pull test circuit.
h
PINNING SOT262B
PIN SYMBOL DESCRIPTION
1 c1 collector 1
2 c2 collector 2
3 b1 base 1
4 b2 base 2
5 e emitter
handbook, halfpage
12
b1
55
34
Top view
b2
MAM031
Fig.1 Simplified outline and symbol.
c1
e
c2
MODE OF OPERATION
f
(MHz)
CW class-A 860 25 2 × 2.25 ≥20
V
(V)
CE
I
CQ
(A)
P
o sync
(W)
(1)
G
(dB)
≥10
p
(1)
Note
1. Three-tone test signal (−8, −16 and −10 dB); d
= −54 dB.
im
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Jul 26 2
Page 3
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 28 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 15 A
average collector current − 15 A
total power dissipation Tmb=70°C; note 1 − 145 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
thermal resistance from junction to mounting-base P
= 145 W; Tmb=70°C note 1 0.9 K/W
tot
thermal resistance from mounting-base to heatsink note 1 0.15 K/W
Note to Limiting values and Thermal characteristics
1. Total device; both sections equally loaded.
120
MGD540
Tmb °C
320
handbook, halfpage
P
tot
(W)
240
160
80
0
0
(2)
(1)
40 80 160
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.2 Power derating curve.
1996 Jul 26 3
Page 4
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
CHARACTERISTICS
Values apply to either transistor section; T
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE
C
c
C
re
collector-base breakdown voltage IC= 30 mA; IE=0 60 −−V
collector-emitter breakdown voltage IC= 60 mA; IB=0 28 −−V
emitter-base breakdown voltage IE= 1.2 mA; IC= 0 2.5 −−V
collector-base leakage current VCB= 27 V; VBE=0 −−3mA
collector-emitter leakage current VCE=20V −−6mA
DC current gain VCE= 25 V; IC= 2.25 A 30 − 140
collector capacitance VCB= 25 V; IE=ie=0;
feedback capacitance VCE= 25 V; IB= 0; f = 1 MHz − 22 − pF
Note
1. The value of C
is that of the die only; it is not measurable, because of the internal matching network.
c
=25°C unless otherwise specified.
j
f=1MHz
− 36
(1)
− pF
160
handbook, halfpage
h
FE
120
80
40
0
02
VCE= 25V; tp= 500 µs; δ =<1%.
4
MGD541
IC (A)
Fig.3 DC current gain as a function of collector
current; typical values.
30
MGD542
VCB (V)
80
handbook, halfpage
C
c
(pF)
60
40
20
6
0
IE=ie= 0; f = 1 MHz.
10 20 40
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
1996 Jul 26 4
Page 5
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
APPLICATION INFORMATION
RF performance at T
=25°C in a common emitter push-pull class-A test circuit.
h
MODE OF OPERATION
f
(MHz)
CW class-A 860 25 2 × 2.25 ≥20
CW class-A 860 25 2 × 2.25 ≥20
V
(V)
CE
I
CQ
(A)
P
o sync
(W)
(1)
(2)
G
(dB)
≥10
≥10
p
d
im
(dB)
(1)
(2)
≤−54
≤−51
(1)
(2)
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −10 dB, sideband signal −16 dB), 0 dB corresponds to
peak sync level.
2. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), 0 dB corresponds to
peak sync level.
Ruggedness in class-A operation
The BLV859 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
conditions: V
80
handbook, halfpage
P
o sync
(W)
60
= 25 V; ICQ=2×2.25 A; f = 860 MHz; Th=25°C; P
CE
MGD543
(1)
(2)
o sync
14
handbook, halfpage
G
p
(dB)
10
=20W.
MGD544
(1)
(2)
40
20
0
024
VCE= 25 V; ICQ=2×2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=25°C.
(2) Th=70°C.
6
P
i sync
8
(W)
Fig.5 Output power as a function of input power;
typical values.
6
2
020
VCE= 25 V; ICQ=2×2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=25°C.
(2) Th=70°C.
40 60 80
P
o sync
(W)
Fig.6 Power gain as a function of output power;
typical values.
1996 Jul 26 5
Page 6
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
(1)
P
o sync
MGD545
(2)
(W)
−10
handbook, halfpage
d
im
(dB)
−30
−50
−70
0
VCE= 25 V; ICQ=2×2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=70°C.
(2) Th=25°C.
20 40 8060
Fig.7 Intermodulation distortion as a function of
output power; typical values.
-40
handbook, halfpage
d
im
(dB)
-50
-60
-70
3
VCE= 25 V; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=70°C.
(2) Th=25°C.
(1)
(2)
456
MGD546
IC (A)
Fig.8 Intermodulation distortion as a function of
collector current; typical values.
1996 Jul 26 6
Page 7
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
supply
V
C5
L17
C6
C2
TR2
R2
TR1
C1
R1
+V
CC
50 Ω
output
C10
C15
C9 C13
L15
L13
L11
L9
DUT
L7
L5
B2
C19 C20 C21 C22
C18
C12
MGD547
C11
L16
L14
L12
L10
handbook, full pagewidth
L8
L6
R4
C3
TR2
P1
R3
BB
+V
1996 Jul 26 7
C7
C4
L3
L1
R5
C17
C16
B1
input
C14
50 Ω
L4
L2
R6
C8
Fig.9 Class-A test circuit at f = 860 MHz.
Page 8
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
handbook, full pagewidth
50 Ω
input
C4
C14
TR1
R5
R6
115
R3
P1
TR2
C2
L5 BBC
L3
R4
C3
E C B
C7
C1
R2
R1
B1 B2
L1 & L2
C16 & C17
C5
C6
L9L7
L11
BLV859
C8
L4
C18 & C19
L6
L8 L10
C
L12
C22 & C23
C21 & C22
C20 & C21
C19 & C20
L13
L14
L17
L15
L16
55
V
CC
C13
GND
C9
C10
C15
C12
&
C11
50 Ω
output
inner lead and outer lead are shorted. (repeat for each balun)
Dimensions in mm.
Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit.
1996 Jul 26 8
MGD551
Page 9
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
List of components
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C2, C3, C5, C6 multilayer ceramic chip capacitor; 15 nF 805 2222590 16629
C4 solid aluminium capacitor 47 µF; 25 V 2222 030 36479
C7, C8 multilayer ceramic chip capacitor 10 nF 805 2222 590 16627
C9, C10, C11, C12 multilayer ceramic chip capacitor 100 nF 1206 2222 591 16641
C13 solid aluminium capacitor 10 µF; 63 V 2222 030 381109
C14, C15 multilayer ceramic chip capacitor; note 1 47 pF
C16 multilayer ceramic chip capacitor; note 1 8.2 pF
C17, C21 Tekelec Giga trim 37271 0.6 to 4.5 pF
C18 multilayer ceramic chip capacitor; note 1 13 pF
C19 multilayer ceramic chip capacitor; note 1 3.9 pF
C20 multilayer ceramic chip capacitor; note 1 12 pF
C22 multilayer ceramic chip capacitor; note 1 9.1 pF
L1, L2, L15, L16 stripline; note2 50 Ω 2 × 30.6 mm
L3, L4 stripline; note 2 50Ω 2 × 9.5 mm
L5, L6 stripline; note 2 32.4Ω 4 × 3mm
L7, L8, L9, L10 stripline; note 2 16.2 Ω 9.5 × 2.6 mm
L11, L12 stripline; note 2 37.5 Ω 3.5 × 3.4 mm
L13, L14 stripline; note 2 50 Ω 2 × 13.9 mm
L17 stripline; note 2 77.7 Ω 1 × 120 mm
B1, B2 Semi rigid coax balun UT70-25 Z = 25 Ω, ±1.5 Ω 70 mm
R1 SMD resistor 220 Ω 805 2322 734 22201
R2 SMD resistor 1.8 Ω 805 2322 734 21808
R3 SMD resistor 2.7 kΩ 805 2322 734 22702
R4 SMD resistor 33 Ω 805 2322 734 23309
R7, R8 SMD resistor 3.3 Ω 805 2322 734 23308
P1 Murata potentiometer
RG4M08-102VM-TG
TR1 NPN transistor BD139 9330 912 20112
TR2 double PNP transistor BVC62 5332 130 60505
1kΩ
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad PCB: Rogers ULTRALAM 200 (B0300M1046QB) (ε
thickness 0.76 mm.
1996 Jul 26 9
= 2.55);
r
Page 10
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
handbook, halfpage
8
Z
i
(Ω)
6
4
2
0
450 550 950
VCE= 25 V; ICQ=2×2.25 A; P
x
i
r
i
650
750 850
= 20 W (total device); Th=25°C.
o sync
MGD548
f (MHz)
Fig.11 Input impedance (per section) as a function
of frequency (series components); typical
values.
handbook, halfpage
8
Z
L
(Ω)
6
4
2
0
−2
450 950
VCE= 25 V; ICQ=2×2.25 A; P
550 650 750 850
R
L
X
L
= 20 W (total device); Th=25°C.
o sync
MGD549
f (MHz)
Fig.12 Load impedance (per section) as a function
of frequency (series components); typical
values.
20
handbook, halfpage
G
p
(dB)
16
12
8
4
0
450 950
VCE= 25 V; ICQ=2×2.25 A; P
550 650 750 850
= 20 W (total device); Th=25°C.
o sync
f (MHz)
Fig.13 Gain as a function of frequency; typical
values.
MGD550
handbook, halfpage
Z
i
Z
L
Fig.14 Definition of transistor impedance.
MBA451
1996 Jul 26 10
Page 11
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
PACKAGE OUTLINE
handbook, full pagewidth
2.47
2.20
0.13
2.54
10.4
max
21.85
8.51
8.25
(4x)
12
43
11.05
27.94
34.3 max
0.25 M
5
max
1.65
seating plane
3.3
3.0
5.4
9.8
MSA453
15.6
max
Dimensions in mm.
Torque on screw: min. 0.6 Nm; max. 0.75 Nm.
Recommended screw: cheese-head 4-40 UNC/2A.
Heatsink compound must be applied sparingly and evenly distributed.
Fig.15 SOT262B.
1996 Jul 26 11
Page 12
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 26 12
Page 13
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
NOTES
1996 Jul 26 13
Page 14
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
NOTES
1996 Jul 26 14
Page 15
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
NOTES
1996 Jul 26 15
Page 16
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© Philips Electronics N.V. 1996 SCA51
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands 127041/1200/02/pp16 Date of release: 1996 Jul 26 Document order number: 9397 75000987
Internet: http://www.semiconductors.philips.com
(1) BLV859_2 July 18, 1996 12:44 pm
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