Datasheet BLV857 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV857

UHF linear push-pull power
transistor

Product specification
Supersedes data of 1995 Oct 04

1997 Jan 16

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV857

FEATURES

• Internal input matching for an optimum wideband
capability and high gain

• Polysilicon emitter ballasting resistors for an optimum
temperature profile

• Gold metallization ensures excellent reliability.

APPLICATION

• Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.

DESCRIPTION

NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT324B
4-lead rectangular flange package with a ceramic cap. The
common emitters are connected to the flange.

PINNING SOT324B

PIN SYMBOL DESCRIPTION

1 c1 collector 1
2 c2 collector 2
3 b1 base 1
4 b2 base 2
5 e common emitters

handbook, halfpage

12

b1

Top view

3

5

4

b2

MAM217

Fig.1 Simplified outline and symbol.

c1

e

c2

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

CW class-A 860 25 2 × 1.1 ≥10

=25°C in a common emitter push-pull test circuit.

h

f

(MHz)

V

(V)

CE

I

CQ

(A)

P

o sync

(W)

(1)

G

(dB)

≥10

p

(1)

Note

1. Three-tone test signal (−8, −16 and −10 dB); d

= −54 dB.

im

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Jan 16 2

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV857

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 28 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 7.4 A
average collector current − 7.4 A
total power dissipation Tmb=70°C; note 1; see Fig.2 − 80 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

thermal resistance from junction to mounting-base P

=80W;Tmb=70°C note 1 1.6 K/W

tot

thermal resistance from mounting-base to heatsink note 1 0.4 K/W

Note to Limiting values and Thermal characteristics

1. Total device; both sections equally loaded.

120

MBH754

Tmb (°C)

200

handbook, halfpage

P

tot

(W)

160

120

80

40

0

040

(1)

(2)

80 160

(1) Short-time operation during mismatch.
(2) Continuous operation.

Fig.2 Power derating curve.

1997 Jan 16 3

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV857

CHARACTERISTICS

Values apply to either transistor section; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

collector-base breakdown voltage IC= 15 mA; IE=0 60 −−V
collector-emitter breakdown voltage IC= 30 mA; IB=0 28 −−V
emitter-base breakdown voltage IE= 0.6 mA; IC= 0 2.5 −−V
collector-base leakage current VCB=27V; VBE=0 −−1.5 mA

collector-emitter leakage current VCE=20V −−3mA
hFEDC current gain VCE=25V; IC= 1.1 A; see Fig.3 30 − 140
C

c

C

re

collector capacitance VCB=25V; IE=ie= 0; f = 1 MHz;

feedback capacitance VCE=25V; IC= 0; f = 1 MHz − 11 − pF

=25°C unless otherwise specified.

j

see Fig.4

− 18 − pF

160

handbook, halfpage

h

FE

120

80

40

0

01

VCE= 25V; tp= 500 µs; δ =<1%.

23

MBH756

I

(A)

c

Fig.3 DC current gain as a function of collector

current; typical values.

40

handbook, halfpage

C

c

(pF)

30

20

10

0

010

IE=ie= 0; f = 1 MHz.

20 30

VCB (V)

Fig.4 Collector capacitance as a function of

collector-base voltage; typical values.

MBH755

40

1997 Jan 16 4

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV857

APPLICATION INFORMATION

RF performance at T

MODE OF OPERATION

CW class-A 860 25 2 × 1.1 ≥10
CW class-A 860 25 2 × 1.1 ≥10

Notes

1. Three-tone test method: f
f

sideband

= 859.68 MHz (sideband signal −16 dB); 0 dB corresponds to peak sync level.

2. Three-tone test method: f
f

sideband

= 859.68 MHz (sideband signal −16 dB); 0 dB corresponds to peak sync level.

Ruggedness in class-A operation

The BLV857 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
conditions: V

CE

=25°C in a common emitter push-pull class-A test circuit.

h

f

(MHz)

= 855.25 MHz (vision carrier −8 dB); f

vision

= 855.25 MHz (vision carrier −8 dB); f

vision

V

(V)

CE

I
(A)

= 25 V; ICQ=2×1.1 A; f = 860 MHz; Th=25°C; P

CQ

o sync

P

o sync

(W)

(1)
(2)

= 860.75 MHz (sound carrier −10 dB);

sound

= 860.75 MHz (sound carrier −7 dB);

sound

G

(dB)

≥10
≥10

p

(1)
(2)

=10W.

d

(dB)

≤−54
≤−51

im

(1)
(2)

50

handbook, halfpage

P

o sync

(W)

40

30

20

10

0

02

VCE= 25 V; ICQ=2×1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=25°C.
(2) Th=70°C.

(1) (2)

46

MBH757

P

(W)

i sync

Fig.5 Output power as a function of input power;

typical values.

P

o sync

MBH758

(W)

14

handbook, halfpage

G

p

(dB)

12

10

8

6

020

VCE= 25 V; ICQ=2×1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=25°C.
(2) Th=70°C.

(1)

(2)

40 60

Fig.6 Power gain as a function of output power;

typical values.

1997 Jan 16 5

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV857

P

o sync

MBH759

(W)

−30

handbook, halfpage

d

im

(dB)

−40

−50

−60

−70

−80

020

VCE= 25 V; ICQ=2×1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=70°C.
(2) Th=25°C.

(2)

(1)

40 60

Fig.7 Intermodulation distortion as a function of

output power; typical values.

−40

handbook, halfpage

d

im

(dB)

−45

−50

(1)

−55

(2)

−60

1.4 1.8

VCE= 25 V; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=70°C.
(2) Th=25°C.

MBH760

2.62.2 3

IC (A)

Fig.8 Intermodulation distortion as a function of

collector current; typical values.

1997 Jan 16 6

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV857

C15

CC

V

+

C11

C12

50 Ω

output

C29

C13

MBH764

C14

supply

V

C5

R4

L17

C6

C2

C3

T2

T2

P1

R2

C1

T1

R3

R1

C30

L7

L15

L13

L11

L9

DUT

L5

B2

C28

C27

C26

C25

C24C22

C23C21

L3

L14

L4

L16

L12

L6

L10

C31

handbook, full pagewidth

L8

Fig.9 Class-A test circuit at f = 860 MHz.

BB

V

+

C4

1997 Jan 16 7

C7

C8

L1

R5

B1

input

C20

50 Ω

R6

L2

C9

C10

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV857

handbook, full pagewidth

50 Ω
input

C4

C9

C7

T1

C10

C8

E C B

B1

L1 & L2

R5
C20
R6

R3

C1

R1

P1

T2

C2

R2

C21 & C22

L3

C23 & C24

115

55

C30

L9

L10

C31

L11

L12

C5

C6

C27 & C28

C25 & C26

L13

L14L4

B2

L15

&

L16

R4
C3

L7

L5

BLV857

L6

L8

C29

C11

C12

C14

C13

L17

C15

V

CC

50 Ω

output

inner lead and outer lead are shorted (each balun).wire jumper

Dimensions in mm.
The components are situated on one side of the copper-clad epoxy fibre-glass board, the other side is unetched and serves

as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.

Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit.

1997 Jan 16 8

MBH765

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV857

List of components

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C2, C3, C5, C6,
C7, C8, C9, C10

C4 solid aluminium capacitor 47 µF; 25 V 2222 030 36479
C11, C12, C13,

C14, C30, C31
C15 solid aluminium capacitor 10 µF; 63 V 2222 030 38109
C20 multilayer ceramic chip capacitor; note 1 18 pF
C21 multilayer ceramic chip capacitor; note 1 3 pF
C22, C24, C26, C28 Tekelec Giga trim 37271; note 3 0.6 to 4.5 pF
C23 multilayer ceramic chip capacitor; note 1 7.5 pF
C25 multilayer ceramic chip capacitor;

C27 multilayer ceramic chip capacitor;

C29 multilayer ceramic chip capacitor; note 1 100 pF
L1, L2, L15, L16 stripline; note 2 50 Ω 30.6 × 2mm
L3, L4 stripline; note 2 50 Ω 10 × 2mm
L5, L6 stripline; note 2 26.5 Ω 3 × 5mm
L7, L8 stripline; note 2 15 Ω 3 × 10 mm
L9, L10 stripline; note 2 104 Ω 6 × 0.5 mm
L11, L12 stripline; note 2 38.8 Ω 3 × 3mm
L13, L14 stripline; note 2 50 Ω 22.5 × 2mm
L17 stripline; notes 2 and 4 76.2 Ω 120 × 1mm
B1, B2 Semi rigid coax balun UT70-25 Z = 25 Ω ±1.5 Ω 70 mm
R1 SMD resistor 220 Ω 805 2322 734 22201
R2 SMD resistor 1.8 Ω 805 2322 734 21808
R3 SMD resistor 4.3 kΩ 805 2322 734 24302
R4 SMD resistor 33 Ω 805 2322 734 23309
R5, R6 SMD resistor 3.3 Ω 805 2322 734 23308
P1 potentiometer 2 kΩ
T1 NPN transistor BD139 9330 912 20112
T2 double PNP transistor BCV62 5322 130 60505

multilayer ceramic chip capacitor 10 nF 805 2222 590 16627

multilayer ceramic chip capacitor 100 nF 1206 2222 591 16641

11 pF

notes 1 and 3

9.1 pF

notes 1 and 3

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. The striplines are on a double copper-clad printed-circuit board: Rogers ULTRALAM 2000 (B0300M1046QB)
(ε

= 2.55); thickness 0.76 mm.

r

3. Position of C25 and C26: distance of centre capacitor to transistor BLV857 = 7.5 mm.
Position of C27 and C28: distance of centre capacitor to balun B2 = 1.5 mm.

4. The sense resistor on the bias unit is implemented as a stripline L17, in this way we obtain a small sense resistor
(approximately 80 mΩ) which can handle the dissipated power.

1997 Jan 16 9

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV857

handbook, halfpage

5

Z

i

(Ω)

4

3

2

1

0

400 600 800 1000

VCE= 25 V; ICQ=2×1.1 A; P

x

i

r

i

= 10 W (total device); Th=25°C.

o sync

MBH761

f (MHz)

Fig.11 Input impedance (per section) as a function

of frequency (series components);
typical values.

10

handbook, halfpage

Z

L

(Ω)

8

6

4

2

0

400 600 800 1000

VCE= 25 V; ICQ=2×1.1 A; P

R

L

X

L

= 10 W (total device); Th=25°C.

o sync

MBH762

f (MHz)

Fig.12 Load impedance (per section) as a function

of frequency (series components);
typical values.

20

handbook, halfpage

G

p

(dB)

16

12

8

4

0

400 600 800 1000

VCE= 25 V; ICQ=2×1.1 A; P

= 10 W (total device); Th=25°C.

o sync

MBH763

f (MHz)

Fig.13 Gain as a function of frequency;

typical values.

1997 Jan 16 10

handbook, halfpage

Z

i

Z

L

Fig.14 Definition of transistor impedance.

MBA451

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV857

PACKAGE OUTLINE

handbook, full pagewidth

0.1

2.32

2.20

Dimensions in mm.
Recommended screw: cheese-head 4-40 UNC/2A. Torque on screw: min. 0.6 Nm; max. 0.75 Nm.

Heatsink compound must be applied sparingly and evenly distributed.

19.03

18.77

8.26

8.0

14.22

1

3

2

4

1.66

1.39

5

(3x)

1.66

1.39

3.43

3.17

MSA451

5.59

4.57

6.43

6.17

5.59

4.57

5.0

max

Fig.15 SOT324B.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Jan 16 11

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© Philips Electronics N.V. 1997 SCA53
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Printed in The Netherlands 127067/0/02/pp12 Date of release: 1997 Jan 16 Document order number: 9397 750 01381