Datasheet BLV59 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D076

BLV59

UHF linear power transistor

Product specification
Supersedes data of March 1993

1998 Jan 09

Philips Semiconductors Product specification

UHF linear power transistor BLV59

FEATURES

• Internal input matching to achieve an optimum
wideband capability and high power gain

• Emitter-ballasting resistors for lower junction
temperatures

• Titanium-platinum-gold metallization ensures long life
and excellent reliability.

APPLICATIONS

• UHF linear amplifiers in television transmitters.

DESCRIPTION

NPN silicon planar epitaxial power transistor encapsulated
in a 6-lead SOT171A flange package with a ceramic cap.
All leads are isolated from the flange.

PINNING - SOT171A

PIN SYMBOL DESCRIPTION

1 e emitter
2 e emitter
3 b base
4 c collector
5 e emitter
6 e emitter

handbook, halfpage

Top view

6

b

12345

MAM141

Fig.1 Simplified outline and symbol.

c

e

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

=25°C in a common emitter class-AB circuit.

h

f

(MHz)

V

(V)

CE

P

(W)

L

G

p

(dB)

η

(%)

C

CW, class-AB 860 25 30 >7 >50

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1998 Jan 09 2

Philips Semiconductors Product specification

UHF linear power transistor BLV59

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

I

CM

P

tot

T

stg

T

j

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 27 V
emitter-base voltage open collector − 3.5 V
collector current (DC) − 3A
average collector current − 3A
peak collector current f > 1 MHz − 9A
total power dissipation Tmb=25°C; f > 1 MHz − 70 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

10

handbook, halfpage

I

C

(A)

1

−1

10

11010

R

= 0.4K/W.

th mb-h

Th = 70 °C

Fig.2 DC SOAR.

T

amb

VCE (V)

MGP379

= 25 °C

handbook, halfpage

2

100

P

tot

(W)

50

0

0 200

(1) Continuous operation (f > 1 MHz).
(2) Short-time operation during mismatch (f > 1 MHz).

(2)

(1)

100

MGP380

Th (°C)

Fig.3 Power/temperature derating curves.

1998 Jan 09 3

Philips Semiconductors Product specification

UHF linear power transistor BLV59

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

thermal resistance from junction to mounting base Tmb=25°C, P
thermal resistance from mounting base to heatsink 0.4 K/W

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

E

(SBR)

h

FE

C

c

C

re

C

cf

collector-base breakdown voltage open emitter; IC=50mA 50 −−V
collector-emitter breakdown voltage open base; IC= 100 mA 27 −−V
emitter-base breakdown voltage open collector; IE=10mA 3.5 −− V
collector leakage current VCE= 27 V; VBE=0 −−10 mA
second breakdown energy L = 25 mH; f = 50 Hz; RBE=10Ω 4 −−mJ
DC current gain VCE= 24 V; IC=2A 15 −−
collector capacitance VCB= 25 V; IE=ie= 0; f = 1 MHz − 44 − pF
feedback capacitance VCE= 25 V; IC= 0; f = 1 MHz − 30 − pF
collector-flange capacitance − 2 − pF

= 50 W 2.3 K/W

tot

100

handbook, halfpage

h

FE

50

0

048

Tj=25°C.

VCE = 25 V

20 V

MGP381

IC (A)

Fig.4 DC current gain as a function of collector

current; typical values.

100

handbook, halfpage

C

c

(pF)

50

0

0 102030

IE=ie= 0; f = 1 MHz.

VCB (V)

Fig.5 Collector capacitance as a function of

collector-base voltage; typical values

MGP382

1998 Jan 09 4

Philips Semiconductors Product specification

UHF linear power transistor BLV59

APPLICATION INFORMATION

RF performance up to T

=25°C in a common emitter class-AB circuit; R

h

th mb-h

= 0.4 K/W.

MODE OF OPERATION

f

(MHz)

CW, class-AB 860 25 60 >7

V

(V)

CE

I

C(ZS)

(mA)

G

p

(dB)

typ. 8.5

P

(W)

L

η

(%)

30 >50

typ. 55

C

∆G

(dB)

p

(1)

<1

typ. 0.2

Note

1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with

30% sync input/25% sync output compression in television service (negative modulation, C.C.I.R. system).

Ruggedness in class-AB operation

The BLV59 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases at rated load
power under the following conditions: V

handbook, full pagewidth

C1

50 Ω 50 Ω

L1 L2 L3

C3

= 25 V; f = 860 MHz; Th=25°C; R

CE

C5C2 C7

C4 C6 C8

D.U.T.

L4 L6

L5 L7

C9 C19

C10

C11

th mb-h

C12

C14 C16

C13

C15 C17

= 0.4 K/W; I

L11L10L9

C(ZS)

C18

= 60 mA.

Temperature compensated bias (Ri< 0.1 Ω).

+V

BB

L8

R1

C20

Fig.6 Class-AB test circuit at 860 MHz.

C21

+V

CC

MGP383

1998 Jan 09 5

Philips Semiconductors Product specification

UHF linear power transistor BLV59

List of components (see Figs 6 and 7).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C18 multilayer ceramic chip

capacitor; note 1

C2, C14, C16 multilayer ceramic chip

capacitor; note 1
C3, C4, C15, C17 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001
C5, C6 multilayer ceramic chip

capacitor; note 1
C7, C8 multilayer ceramic chip

capacitor
C9, C21 multilayer ceramic chip

capacitor; note 1
C10, C11 multilayer ceramic chip

capacitor; note 2
C12 multilayer ceramic chip

capacitor; note 1
C13 multilayer ceramic chip

capacitor; note 1
C19 multilayer ceramic chip

capacitor; note 1
C20 electrolytic capacitor 6.8 µF; 63 V
L1, L11 stripline; note 3 50 Ω 26 mm × 2.4 mm
L2, L3 stripline; note 3 50 Ω 9.5 mm × 2.4 mm
L4 stripline; note 3 42.6 Ω 6mm×3mm
L5 4 turns of closely wound

0.4 mm enamelled copper

wire

L6 stripline; note 3 42.6 Ω 4mm×3mm
L7 4 turns of closely wound

1 mm enamelled Cu wire

L8 Ferroxcube HF choke grade 3B 4312 020 36642
L9 stripline; note 3 50 Ω 9mm×2.4mm
L10 stripline; note 3 50 Ω 13.5 mm × 2.4 mm
R1 metal film resistor 10 Ω±5%; 1 W

33 pF

3.6 pF

1.8 pF

6.2 pF

330 pF

5.6 pF

5.6 pF

6.2 pF

10 pF

60 nH int. diameter 3 mm

leads 2 × 5mm

45 nH int. diameter 4 mm

leads 2 × 5mm

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.

3. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (ε
thickness1⁄32".

1998 Jan 09 6

= 2.2);

r

Philips Semiconductors Product specification

UHF linear power transistor BLV59

handbook, full pagewidth

copper straps

rivets

rivets

copper straps

130

copper straps

rivets

70

rivets

copper straps

L8

+V

BB

C9

C2

C1

C3 C4

Dimensions in mm.
The components are situated on one side of the copper-clad PTFE-glass board, the other side is unetched and serves as a ground plane.

Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the bases to provide a direct contact
between the copper on the component side and the ground plane.

L1 L2 L3

C5

C6

L5

C7

C8

C10

L4
L6

C19

L9

C11

R1

L7

C12

C13

+V

CC

C21

C14

L10

C15 C17

C20

L11

C16

C18

MGP384

Fig.7 Printed-circuit board and component layout for 860 MHz class-AB test circuit.

1998 Jan 09 7

Philips Semiconductors Product specification

UHF linear power transistor BLV59

50

handbook, halfpage

P

L

(W)

40

30

20

10

0

010

VCE= 25 V; f = 860 MHz; I

= 0.4 K/W; class-AB operation.

R

th mb-h

2468

= 60 mA; Th=25°C;

C(ZS)

MGP385

PS (W)

Fig.8 Load power as a function of source power;

typical values.

10

handbook, halfpage

G

p

(dB)

5

0

050

VCE= 25 V; f = 860 MHz; I

= 0.4 K/W; class-AB operation.

R

th mb-h

25

= 60 mA; Th=25°C;

C(ZS)

G

p

η

C

MGP386

PL (W)

Fig.9 Power gain and efficiency as a function of

load power; typical values.

100

η

(%)

50

0

C

2.2

handbook, halfpage

Z

i

(Ω)

1.8

1.4

1

0.6
400

VCE= 25 V; PL= 30 W; Th=25°C;
R

th mb-h

500 900

= 0.4 K/W; I

= 60 mA; class-AB operation.

C(ZS)

x

i

r

i

600 700 800

MGP387

f (MHz)

Fig.10 Input impedance as a function of frequency

(series components); typical values.

handbook, halfpage

4

Z

L

(Ω)

3

2

1

0

400

VCE= 25 V; PL= 30 W; Th=25°C;
R

th mb-h

500 900

= 0.4 K/W; I

= 60 mA; class-AB operation.

C(ZS)

R

L

X

L

600 700 800

MGP388

f (MHz)

Fig.11 Load impedance as a function of frequency

(series components); typical values.

1998 Jan 09 8

Philips Semiconductors Product specification

UHF linear power transistor BLV59

15

handbook, halfpage

G

p

(dB)

10

5

0

400 600 800 1000

VCE= 25 V; PL= 30 W; Th=25°C;
R

th mb-h

= 0.4 K/W; I

= 60 mA; class-AB operation.

C(ZS)

MGP389

f (MHz)

Fig.12 Power gain as a function of load power;

typical values.

1998 Jan 09 9

Philips Semiconductors Product specification

UHF linear power transistor BLV59

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 6 leads SOT171A

D

A

F

D

1

U

1

q

H

1

b

1

2

H

U

2

Db

9.25

9.04

0.364

0.356

1

D

9.30

8.99

0.366

0.354

A

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

6.81

6.07

0.268

0.239

2.15

1.85

0.085

0.073

b

1

3.20

2.89

0.126

0.114

c

0.16

0.07

0.006

0.003

456

3

b

e

0 5 10 mm

E

1

5.95

5.74

0.234

0.226

E

1

6.00

5.70

0.236

0.224

e

3.58

0.140

C

w

M

C

2

p

w

M

3

scale

F

H

11.31

3.05

10.54

2.54

0.445

0.120

0.415

0.100

B

w

H

1

9.27

9.01

0.365

0.355

1

M

0.135

0.125

AB

p

3.43

3.17

c

E

1

Q

qw

18.42

U

24.90

24.63

0.980

0.970

1

6.00

5.70

0.236

0.224

Q

4.32

4.11

0.170

0.162

E

w

U

2

2

1

0.260.51 1.02

0.010.02 0.040.725

w

3

OUTLINE

VERSION

SOT171A 97-06-28

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

1998 Jan 09 10

ISSUE DATE

Philips Semiconductors Product specification

UHF linear power transistor BLV59

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Jan 09 11

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© Philips Electronics N.V. 1998 SCA57
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Printed in The Netherlands 127067/00/02/pp12 Date of release: 1998 Jan 09 Document order number: 9397 750 03119