Datasheet BLV58 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV58

UHF linear push-pull power
transistor

Product specification

September 1991

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV58

FEATURES

• High power gain

• Double stage internal input

matching for high input impedance

• Diffused emitter-ballasting resistors
enhances ruggedness

• Gold metallization for high
reliability.

DESCRIPTION

The BLV58 is a common emitter
epitaxial npn silicon planar transistor
designed for high linearity class-A
operation in UHF (bands 4 and 5) TV
transmitters and transposers.

The device is incorporated in a
push-pull SOT289 flange envelope
with a ceramic cap, which is utilized
with the emitters connected to the
flange.

PINNING - SOT289

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

= 25 °C in a common emitter test circuit.

h

f

vision

(MHz)

V

(V)

CE

I

CQ

(A)

P

o sync

(W)

G

(dB)

p

d

(dB)

(note 1)

c.w. class-A 860 25 2 × 1.6 25 >10 <−45

Note

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB,
sideband signal −16 dB); zero dB corresponds to peak sync level.

PIN CONFIGURATION

c1

, halfpage

12

34

Top view

5

MBC043

handbook, halfpage

b1

b2

MBA970

e

c2

im

PIN DESCRIPTION

1 collector 1
2 collector 2
3 base 1
4 base 2
5 emitter

Fig.1 Simplified outline and symbol.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

September 1991 2

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV58

LIMITING VALUES (per transistor section unless otherwise specified)

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C,IC(AV)

I

CM

P

tot

T

stg

T

j

Note

1. Total device, both sections equally loaded.

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 27 V
emitter-base voltage open collector − 3.5 V
collector current DC or average value − 4A
collector current peak value;

− 8A

f > 1 MHz

total power dissipation DC operation;

− 87 W
Tmb=70°C
(note 1)

storage temperature range −65 150 °C
junction operating temperature − 200 °C

10

handbook, halfpage

I

C

(A)

T = 70 C

mb

1

110

Total device, both sections equally loaded.

Fig.2 DC SOAR.

o

T

= 25

h

C

V (V)

CE

MRA354

o

200

handbook, halfpage

P

tot

(W)

160

120

80

40

0

50

0 20 40 60 80 100 120

(I) Continuous DC operation.
(II) Short time operation during mismatch.
Total device, both sections equally loaded.

II

I

MRA355

T

h

o

( C)

Fig.3 Power derating curve.

September 1991 3

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV58

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb(DC)

R

th mb-h

from junction to mounting base P

from mounting base to heatsink note 1 0.2 K/W

Note

1. Total device, both sections equally loaded.

CHARACTERISTICS

Values apply to either transistor section; T

= 25 °C.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

collector-base breakdown voltage open emitter;

IC=20mA

V

(BR)CEO

collector-emitter breakdown voltage open base;

IC=50mA

V

(BR)EBO

emitter-base breakdown voltage open collector;

IE=10mA

I

CES

collector-emitter leakage current VBE=0;

VCE=27V

h

FE

DC current gain VCE=25V;

IC= 1.6 A

C

c

collector capacitance VCB=25V;

IE=Ie=0;
f=1MHz

=87W;

dis

Tmb=70°C
(note 1)

1.5 K/W

50 −− V

27 −− V

3.5 −− V

−−10 mA

30 −−

− 36 45 pF

September 1991 4

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV58

C

MRA350

(A)I

120

handbook, halfpage

h

FE

80

40

0

0123

VCE=25V.

Fig.4 DC current gain as a function of collector

current, typical values.

handbook, halfpage

C

c

(pF)

120

80

40

0

0 10203040

IE=ie= 0; f= 1 MHz.

Fig.5 Collector capacitance as a function of

collector-base voltage, typical values.

MRA346

CB

(V)V

September 1991 5

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV58

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter push-pull test circuit; R

h

th mb-h

= 0.2 K/W.

MODE OF OPERA TION

f

vision

(MHz)

V

(V)

CE

I

CQ

(A)

P

o sync

(W)

G

(dB)

c.w. class-A 860 25 2 × 1.6 25 > 10

typ. 11.5

d

P

im

(dB)

(note 1)

<−45

typ. −47

d

cm

(%)

(note 2)

< 20

Notes

1. Three-tone test method: vision carrier −8 dB (860 MHz), sound carrier −7 dB (865.5 MHz), sideband signal −16 dB
(861 MHz); zero dB corresponds to peak sync level.

2. Two-tone test method: vision carrier 0 dB (860 MHz), sound carrier−7 dB (865.5 MHz); zero dB corresponds to peak
sync level. Cross-modulation distortion (d

) is the voltage variation (%) of the sound carrier when the vision carrier

cm

is switched from 0 dB to −20 dB.

-40

handbook, halfpage

d

im

(dB)

-50

-60

o

T = 70 C

h

o

T = 25 C

h

MRA351

d

im

(dB)

-40

-42

-44

-46

-48

handbook, halfpage

T

= 25

h

C

o

T

h

o

= 70 C

MRA349

-70
0102030

Class-A operation; VCE= 25 V; f = 860 MHz; 3-tone test
(−8 dB, −16 dB, −7 dB); I

=2×1.6 A.

CQ

o sync

(W)P

Fig.6 Intermodulation distortion as a function of

output power.

Ruggedness in Class-A operation

The BLV58 is capable of withstanding a full load mismatch
corresponding to VSWR = 50:1 through all phases under
the following conditions:

September 1991 6

-50

1.6 2.4 3.2 4

Class-A operation; VCE= 25 V; f = 860 MHz; 3-tone test
(−8 dB, −16 dB, −7 dB); P

o sync

=25W.

I

(A)

C

Fig.7 Intermodulation distortion as a function of

collector current.

= 25 V, f = 860 MHz, Th=25°C,

V

CE

R

= 0.2 K/W, ICQ=2×1.6 A,

th mb-h

and rated output power.

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV58

handbook, halfpage

P

o sync

(W)

30

20

10

0

0123

Class-A operation; VCE= 25 V; f = 860 MHz; 3-tone test
(−8 dB, −16 dB, −7 dB); I

CQ

o

T = 25 C

h

T = 70 C

=2×1.6 A.

h

MRA356

o

i sync

Fig.8 Output power as a function of input power.

13

handbook, halfpage

G

P

(dB)

11

9

7

(W)P

0102030

Class-A operation; VCE= 25 V; f = 860 MHz; 3-tone test
(−8 dB, −16 dB, −7 dB); I

o

T = 70 C

mb

=2×1.6 A.

CQ

o

T = 25 C

h

MRA348

P (W)

o sync

Fig.9 Gain as a function of output power, typical

values.

September 1991 7

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV58

V

CC

C15

C16

50 Ω

input

V

BB

C7

C8

C9

C10

L6

C1

L1

L2

C3

L3

C2

L4

C5C4

L5

C11

C12

L8

C6

L9

L7

C13

C14

V

BB

BLV58

T.U.T.

L12 R1

C17

C18

C19

C20

C21

L13

L10

C29 C30 C33

L11 L17 L19

C22

C24

L15

L16 L18

C31

C32

C23

C25

C26

R2

C34

C35

L20

L21

L22

50 Ω

output

handbook, full pagewidth

Fig.10 Class-A test circuit at f = 860 MHz.

September 1991 8

C27

C28

V

CC

MBC048

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV58

List of components (see test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2, C34,
C35

C3 multilayer ceramic chip capacitor

C4, C6 film dielectric trimmer 5.5 pF 2222 809 09005
C5 multilayer ceramic chip capacitor

C7, C12, C17,
C26

C8, C14, C19,
C25

C9, C11, C16,
C20, C22, C28

C10, C13, C15,
C21, C23, C27

C18, C24 63 V electrolytic capacitor 1 µF
C29 multilayer ceramic chip capacitor

C30 multilayer ceramic chip capacitor

C31, C33 film dielectric trimmer 3.5 pF 2222 809 05001
C32 multilayer ceramic chip capacitor (note 1) 2.7 pF
L1, L3, L20, L22 stripline (note 2) 35 Ω 39 mm × 4mm
L2, L21 semi-rigid cable (note 3) 50 Ω ext. dia. 3.6 mm;

L4, L5 stripline (note 2) 38 Ω 19 mm × 3.5 mm
L6, L7 RF choke 470 nH
L8, L9 stripline (note 2) 38 Ω 7.5 mm × 3.5 mm
L10, L11 stripline (note 2) 38 Ω 4.5 mm × 3.5 mm
L12, L15 grade 3B RF choke 4312 020 36642
L13, L14 1 turn 1.5 mm copper wire 14 nH int. dia 7 mm;

L16, L17 stripline (note 2) 38 Ω 7mm× 3.5 mm
L18, L19 stripline (note 2) 38 Ω 18 mm × 3.5 mm
R1, R2 1 W metal film resistor 10 Ω

multilayer ceramic chip capacitor
(note 1)

(note 1)

(note 1)
multilayer ceramic chip capacitor 10 nF 2222 852 47103

multilayer ceramic chip capacitor 100 nF 2222 852 47104

63 V electrolytic capacitor 10 µF

multilayer ceramic chip capacitor
(note 1)

(note 1)

(note 1)

15 pF

3.9 pF

7.5 pF

330 pF

12 pF

5.6 pF

length 39 mm

leads 2 × 6mm

Notes

1. American Technical Ceramics type 100B or capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE microfibre-glass dielectric (ε
thickness1⁄32inch, thickness of copper sheet 2 × 35 µm.

3. Cables L2 and L21 are soldered to striplines L1 and L20, respectively.

September 1991 9

= 2.2),

r

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV58

handbook, full pagewidth

handbook, full pagewidth

L1

L2 + L3

C1

C2

C3
C4

170 mm

rivet

(2x)

copper strap

(6x)

MBC046

C7
C8

C9

C10

L6

L4

C5
C6

L5

L7

C14

C11

C13
C12

C18

C17
C19
C21

L10

L8

C29

L9

L11

C26
C25
C23

C22

L13

L16

L17

L14

L12

R1

R2

L15

C20

C30
C31

L19

C24

L18

C32
C33

C34

C35

C16

C15

C27

C28

L21 +

L22

L20

MBC047

80 mm

The components are mounted on one side of a copper clad PTFE microfibre-glass board; the other side is
unetched and serves as a ground plane. Earth connections from the component side to the ground plane are
made by hollow rivets and copper straps.

Fig.11 Component layout for 860 MHz class-A test circuit.

September 1991 10

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV58

handbook, halfpage

6

Z

i

(Ω)

4

x

i

2

0

400 500 600 700 800 900

Class-A operation; VCE=25V;

= 1.6 A (per section); PL= 25 W (total device);

I

CQ

=25°C.

T

h

r

i

Fig.12 Input impedance per section (series

components) as a function of frequency,
typical values.

MRA352

f (MHz)

handbook, halfpage

6

Z

L

(Ω)

4

R

L

2

0

-1
400 500 600 700 800 900

Class-A operation; VCE=25V;

= 1.6 A (per section); PL= 25 W (total device);

I

CQ

=25°C.

T

h

X

L

Fig.13 Load impedance per section (series

components) as a function of frequency,
typical values.

MRA353

f (MHz)

handbook, halfpage

Fig.14 Definition of transistor impedance.

16

handbook, halfpage

G

P

(dB)

14

12

Z

i

Z

MBA451

L

10

400 500 600 700 800 900

Class-A operation; VCE=25V;

= 1.6 A (per section); PL= 25 W (total device);

I

CQ

=25°C.

T

h

MRA347

f (MHz)

Fig.15 Power gain as a function of frequency,

typical values.

September 1991 11

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV58

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT289A

D

A

F

5

U

1

q

H

1

1

U2H

A

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

3.33

3.07

c

0.10

0.05

0.004

0.002

Db

13.10

12.90

0.516

0.508

UNIT

mm

inches

A

4.65

3.92

0.183

0.154

0.131

0.121

3

b

e

F

e

EU

11.53

11.33

0.454

0.446

4.60

0.181

1.65

1.40

0.065

0.055

w

2

4

w

0 5 10 mm

scale

H

H

19.81

4.85

19.05

4.34

0.780

0.191

0.750

0.171

C

M

C

2

M

3

p

1

3.43

3.17

0.135

0.125

B

Q

2.31

2.06

0.091

0.081

c

p

w

M

AB

1

Q

qw

U

1

28.07

21.44

27.81

1.105

1.095

w

1

2

11.81

11.56

0.465

0.455

E

w

3

2

0.250.51 1.02

0.010.02 0.040.844

OUTLINE
VERSION

SOT289A 97-06-28

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

September 1991 12

ISSUE DATE

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV58

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1991 13