Datasheet BLV57 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV57

UHF linear push-pull power transistor

Product speciﬁcation Supersedes data of August 1986

1998 Feb 09

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

FEATURES

• internally matched input for wideband operation and high power gain

• internal midpoint (r.f. ground) reduces negative feedback and improves power gain

• increased input and output impedances (compared with single-ended transistors) simplify wideband matching

• length of the external emitter leads is not critical

• diffused emitter ballasting resistors for an optimum

temperature profile

• gold metallization ensures excellent reliability.

DESCRIPTION

Two n-p-n silicon planar epitaxial transistor sections in one package to be used as push-pull amplifier, primarily intended for use in linear u.h.f. television transmitters and transposers.

The package is an 8-lead flange type with a ceramic cap. All leads are isolated from the flange.

PINNING - SOT161A

PIN SYMBOL DESCRIPTION

1 e emitter 2 e emitter 3 c2 collector 2 4 b2 base 2 5 c1 collector 1 6 b1 base 1 7 e emitter 8 e emitter

handbook, halfpage

1 3 5

78

Top view

2 4 6

MBC826

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

R.F. performance in linear ampliﬁer

MODE OF

OPERATION

f

vision

MHz

V

CE

IC1=I

A

C2

I

C(ZS)

class-A 860 25 0,85 −

T

h

A

°C

70 25

(1)

d

im

dB

−60

−55〉typ.612

class-AB 860 25 1,25 2 × 0,1 25 −−typ. 38

P

o sync

W

(1)

P

W

L

G

p

dB

〉

−

(2)

8,0

typ.

9,0

typ. 6,5

(2)

Notes

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal−16 dB), zero dB corresponds to

peak sync level.

2. Power gain compression is 1 dB.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

1998 Feb 09 2

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage

(peak value); V

open base V Emitter-base voltage (open collector) V Collector current per transistor section

d.c. or average I

(peak value); f 〉 1 MHz I Total power dissipation at T R.F. power dissipation (f 〉 1 MHz); Tmb=25°C Storage temperature T Operating junction temperature T

Note

1. Dissipation of either transistor section should not exceed half rated dissipation.

=0 v

BE

=25°C

mb

(1)

CESM

CEO EBO

C CM

P

tot

P

rf stg j

; I

C(AV)

max. 50 V max. 27 V max. 3,5 V

max. 2 A max. 4 A max. 77 W max. 93 W

−65 to + 150 °C max. 200 °C

(1) (1)

(1) Second breakdown limit

(independent of temperature).

10

handbook, halfpage

I

+ I

C1

C2

(A)

1

11010

Th = 70 °C

Fig.2 D.C. SOAR.

(1)

Tmb = 25 °C

VCE (V)

(1)

MGP358

2

1998 Feb 09 3

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

100

handbook, halfpage

P

tot

(W)

75

50

25

0

050

I Continuous d.c. (including r.f. class-A) operation II Continuous r.f. operation Dissipation of either transistor section should not exceed half rated dissipation.

Fig.3 Power derating curves vs. temperature.

MGP359

ΙΙ

Ι

T

(°C)

h

100

(1)

THERMAL RESISTANCE

(dissipation = 42 W; T

= 80,5 °C, i.e. Th=70°C)

mb

From junction to mounting base (d.c. dissipation) R From junction to mounting base (r.f. dissipation) R From mounting base to heatsink R

th j−mb(dc) th j−mb(rf) th mb−h

= 2,43 K/W = 1,91 K/W = 0,25 K/W

1998 Feb 09 4

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

handbook, full pagewidth

3

R

th j-h

(K/W)

2.5

2

1.5 02040

Th = 120

°C

100

80 °C 60 °C 40 °C

°C

100 °C

75 °C

175 °C

150 °C

125 °C

60

20 °C

0 °C

Tj = 200 °C

P

MGP360

(W)

tot

Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink

and junction temperature as parameters. (R

th mb-h

= 0,25 K/W.)

10080

Example

Nominal class-A push-pull operation (without r.f. signal): V

Fig.4 shows: R

Typical device: R

T

th j-h

j

th j-h

j

max. 2,68 K/W max. 184 °C typ. 2,28 K/W typ. 167 °C

= 25 V; IC1=IC2= 0,85 A; Th=70°C.

CE

1998 Feb 09 5

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

CHARACTERISTICS apply to either transistor section unless otherwise speciﬁed

T

=25°C

j

Collector-emitter breakdown voltage

V

= 0; IC= 10 mA V

BE

open base; I

= 25 mA V

C

Emitter-base breakdown voltage

open collector; I

= 5 mA V

E

Collector cut-off current

VBE= 0; VCE= 27 V I

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E R

=10Ω E

BE

D.C. current gain

(1)

IC= 0,85 A; VCE= 25 V h

(BR)CES (BR)CEO

(BR)EBO

CES

SBO SBR

FE

〉 50 V 〉 27 V

〉 3,5 V

〈 10 mA

〉 2mJ 〉 2mJ

〉

typ.

15 40

D.C. current gain ratio of transistor sections

I

= 0,85 A; VCE= 25 V 0,67 to 1,5

C

Collector-emitter saturation voltage

IC= 1,7 A; IB= 0,17 A V

Transition frequency at f = 100 MHz

−IE= 0,85 A; VCB= 25 V f

−I

= 1,7 A; VCB= 25 V f

E

(1)

CEsat

(2)

T T

Collector capacitance at f = 1 MHz

= 0; VCB= 25 V C

I

E=Ie

c

Feedback capacitance at f = 1 MHz

I

= 50 mA; VCE= 25 V C

C

Collector-ﬂange capacitance C

re cf

Notes

1. Measured under pulse conditions: t

≤ 300 µs; δ≤0,02.

p

2. Measured under pulse conditions: tp≤ 50 µs; δ≤0,01.

The graphs apply to either transistor section.

typ. 0,75 V

typ. 2,5 GHz typ. 2,5 GHz

typ.

〈

2430pF

pF

typ. 15 pF typ. 2 pF

1998 Feb 09 6

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

10

handbook, halfpage

I

C

(A)

1

−1

10

−2

10

MGP361

Th = 70 °C 25 °C

1.5

VBE (V)

Fig.5 Typical values; VCE= 25 V.

20.5 1

60

handbook, halfpage

h

FE

VCE = 25 V

40

20

0

012

Fig.6 Typical values; Tj=25°C.

1998 Feb 09 7

MGP362

5 V

IC (A)

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

handbook, halfpage

4

f

T

(GHz)

3

2

1

0

0123

typ

Fig.7 VCB= 25 V; f = 500 MHz; Tj=25°C.

MGP363

−IE (A)

100

handbook, halfpage

C

c

(pF)

75

50

25

0

0 102030

Fig.8 IE=Ie= 0; f = 1 MHz; Tj=25°C.

1998 Feb 09 8

MGP364

typ

VCB (V)

Philips Semiconductors Product speciﬁcation

h

UHF linear push-pull power transistor BLV57

APPLICATION INFORMATION

R.F. performance in u.h.f. class-A operation (linear push-pull power ampliﬁer)

(MHz) VCE(V) IC1=IC2(A) Th(°C) d

f

vision

im

(1)

(dB) P

70 −60 〉 6 〉 8,0

860 25 0,85

70 −60 typ. 7,5 typ. 8,5 70 −55 typ. 10 typ. 8,5 25 −55 typ. 12 typ. 9,0

Note

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level.

o sync

(1)

(W) Gp (dB)

50 Ω

+V

BB1

C5

C8

T.U.T.

L5

L1

L2

C2

C1

C3

L3

C4

L4

C7

+V

L6

C6

C9 C13 C16 C19

L7

L8

C10

BB2

C11

C12

+V

CC1

L9

L12

CC2

C14

C15

C17

C18

L10

L11

MGP365

C20

C21

L13

C22

R1

C23

50 Ω

L14

Fig.9 Class-A test circuit at f

1998 Feb 09 9

vision

= 860 MHz.

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

List of components:

(1)

C1 = C6 = C16 = 4,7 pF (500 V) multilayer ceramic chip capacitor (ATC C2 = C3 = C20 = C21 = 33 pF multilayer ceramic chip capacitor (cat. no. 2222 851 13339) C4 = C9 = C13 = C19 = 1,2 to 3,5 pF ﬁlm dielectric trimmer (cat.no. 2222 809 05001) C5 = C7 = C15 = C17 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104) C8 = C10 = C11= C12 = 220 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13221) C14 = C18 = 6,8 µF/40 V solid aluminium electrolytic capacitor C22 = C23 = 1 pF (500 V) multilayer ceramic chip capacitor (ATC

(1)

C9 and C13 are placed 8,0 and 14,0 mm from transistor edge, respectively. L1 = L2 = L13 = L14 = 50 Ω semi-rigid cable; outer diameter 2,2 mm; length 29,0 mm. These cables are soldered on

75 Ω striplines (1,1 mm × 28,0 mm). The centre conductors of the cables L1 and L13 are not connected.

L3 = L4 = 52 Ω stripline (2,0 mm × 16,5 mm) L5 = L8 = 470 nH microchoke L6 = L7 = 39 Ω stripline (3,1 mm × 8,0 mm) L9 = L12 = 1 turn Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2 × 3,5 mm L10 = L11 = 39 Ω stripline (3,1 mm × 34,0 mm) L3, L4, L6, L7, L10 and L11 are striplines on a double Cu-clad printed-circuit board with PTFE ﬁbre-glass dielectric

(∈

= 2,74); thickness 1/32”.

r

R1 = 10 Ω carbon resistor

)

Note

1. ATC means American Technical Ceramics.

1998 Feb 09 10

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

handbook, full pagewidth

input

C19

C20

C21

73

60

L13

C22

R1

C23

L14

output

64

+V

BB1

L1

C1

L2

C4 C9

C2

C3

L5

L3 C6

L4 L8

11

+V

CC1

L10

L11

C11

L9

L12

C12C10C7

C8C5

L6 L7

C13

C16

C14

C15

L10

L11

C17

C18

+V

BB2

+V

CC2

MGP366

Fig.10 Component layout and printed-circuit board for 860 MHz class-A test circuit.

The circuit and the components are on one side of the PTFE fibre-glass board, the other side is unetched copper to serve as a ground-plane. Earth connections are made by means of bolts. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane.

1998 Feb 09 11

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

MGP367

−50

handbook, halfpage

G

p

10

d

im

(dB)

−60 d

im

−70

5 101520

Fig.11 Intermodulation distortion (dim)

30

handbook, halfpage

d

cm

(%)

G

p

(dB)

5

0

P

(W)

o sync

(1)

and power gain as a function of output power.

MGP368

20

10

0

01020

Fig.12 Cross-modulation distortion (dcm)

1998 Feb 09 12

P

(W)

o sync

(2)

as a function of output power.

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

Conditions for Figs 11and 12: Typical values; VCE= 25 V; IC=2×0,85 A; − − − Th=25°C;  Th=70°C; f

vision

= 860 MHz.

Ruggedness in push-pull class-A operation

The BLV57 is capable of withstanding full load mismatch (VSWR = 50 through all phases) under the following conditions:

V

= 25 V; IC=2×0,85 A; Th=70°C; P

CE

At any other composition of the output signal: P

o sync

(1)

≤ 12,5 W; f = 860 MHz; R

(r.m.s. value) ≤ 5 W.

L

th mb-h

= 0,25 K/W.

Notes

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. Intermodulation distortion of input signal ≤−70 dB.

2. Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (d

) is the voltage variation (%) of sound carrier when vision carrier is switched from 0

cm

dB to −20 dB.

6

handbook, halfpage

ri, x

i

(Ω)

x

i

MGP369

4

2

r

i

0

400 650 900

f (MHz)

Fig.13 Input impedance (series components).

1998 Feb 09 13

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

15

handbook, halfpage

RL, X

L

(Ω)

10

R

L

5

X

L

0

400 650 900

f (MHz)

Fig.14 Load impedance (series components).

MGP370

15

handbook, halfpage

G

p

(dB)

10

5

0

400 650 900

Fig.15

1998 Feb 09 14

MGP371

f (MHz)

Philips Semiconductors Product speciﬁcation

w

UHF linear push-pull power transistor BLV57

Conditions for Figs 13, 14 and 15: The graphs apply to either transistor section assuming class-A push-pull operation.

Typical values; VCE= 25 V; IC= 0,85 A; Th=70°C.

APPLICATION INFORMATION

R.F. performance in u.h.f. class-AB operation (c.w.)

(MHz) VCE(V) I

f

vision

860 25 2 × 0,1 25

860 25 2 × 0,1 70

(A) Th(°C) PL(W) IC1=IC2(A) η (%) G

C(ZS)

12,5 typ. 7,5

38 typ. 1,25 typ. 60 typ. 6,5

12,5 typ. 7,0

30 typ. 1,10 typ. 55 typ. 6,0

Note

1. Typical values are based on 1 dB gain compression. Using a 3rd order amplitude transfer characteristic, 1 dB compression corresponds with 30% sync input/25% sync output compression in television service (negative modulation, C.C.I.R. system).

p

(1)

(dB)

50 Ω

idth

+V

BB1

C8

C5

L1

L2

C2

C1

C3

L3

C4

L4

C7

T.U.T.

L5

L6

C6

C9 C13 C15 C17

L7

L8

C10

C11

C12

+V

CC1

L9

L12

C14

C16

L10

L11

C18

C19

L13

C20

R1

C21

50 Ω

L14

+V

BB2

Fig.16 Class-AB test circuit at f

1998 Feb 09 15

vision

+V

CC2

MGP372

= 860 MHz.

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

List of components:

(1)

)

C1 = C6 = C15 = 4,7 pF (500 V) multilayer ceramic chip capacitor (ATC C2 = C3 = C18 = C19 = 33 pF multilayer ceramic chip capacitor (cat. no. 2222 851 13339) C4 = C9 = C13 = C17 = 1,2 to 3,5 pF ﬁlm dielectric trimmer (cat. no. 2222 809 05001) C5 = C7 = C14 = C16 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104) C8 = C10 = C11 = C12 = 220 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13221) C20 = C21 = 1 pF (500 V) multilayer ceramic chip capacitor (ATC C9 and C13 are placed 8,0 and 14,0 mm from transistor edge, respectively. L1 = L2 = L13 = L14 = 50 Ω semi-rigid cable; outer diameter 2,2 mm; length 29,0 mm. These cables are soldered on

75 Ω striplines (1,1 mm × 28,0 mm). The centre conductors of the cables L1 and L13 are not connected.

L3 = L4 = 52 Ω stripline (2,0 mm × 16,5 mm) L5 = L8 = 470 nH microchoke L6 = L7 = 39 Ω stripline (3,1 mm × 8,0 mm) L9 = L12 = 1 turn Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2 × 3,5 mm L10 = L11 = 39 Ω stripline (3,1 mm × 34,0 mm) L3, L4, L6, L7, L10 and L11 are striplines on a double Cu-clad printed-circuit board with PTFE ﬁbre-glass dielectric

= 2,74); thickness 1/32”

(∈

r

R1 = 10 Ω carbon resistor.

Note

1. ATC means American Technical Ceramics.

1998 Feb 09 16

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

handbook, full pagewidth

input

C17

C18

C19

73

60

L13

C20

R1

C21

L14

output

11

64

+V

BB1

L1

C1

L2

C4 C9

C2

C3

L5

L3 C6

L4 L8

11

+V

CC1

C14

L10

L11

C11

L9

L12

C12C10C7

C13

C15

L10

L11

C16

C8C5

L6 L7

+V

BB2

+V

CC2

MGP373

Fig.17 Component layout and printed-circuit board for 860 MHz class-AB test circuit.

The circuit and the components are on one side of the PTFE fibre-glass board, the other side is unetched copper to serve as a ground-plane. Earth connections are made by means of bolts. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane.

1998 Feb 09 17

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

60

handbook, halfpage

P

L

(W)

40

20

0

0510

Fig.18 Typical values; VCE= 25 V; I

Th = 25 °C

70 °C

=2×0,1 A; f

C(ZS)

PS (W)

MGP374

= 860 MHz.

vision

7.5

handbook, halfpage

G

p

(dB)

5

2.5

0

02040

Fig.19 Typical values; VCE= 25 V; I

C(ZS)

p

η

=2×0,1 A; −−−Th=25°C;  Th=70°C; f

1998 Feb 09 18

PL (W)

MGP375

75

η

(%)

50

25

0

= 860 MHz.

vision

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

Ruggedness in class-AB operation

The BLV57 is capable of withstanding a load mismatch (VSWR ≤ 2 through all phases) up to 30 W (r.m.s. value) or (VSWR ≤ 50 through all phases) up to 19 W under the following conditions: VCE= 25 V; Th=70°C; f = 860 MHz; R

th mb-h

= 0,25 K/W.

6

handbook, halfpage

ri, x

i

(Ω)

4

2

0

400 650 900

x

i

r

i

f (MHz)

Fig.20 Input impedance (series components).

MGP376

1998 Feb 09 19

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

15

handbook, halfpage

RL, X

L

(Ω)

10

R

L

5

X

L

0

400 650 900

f (MHz)

Fig.21 Load impedance (series components).

15

handbook, halfpage

G

p

(dB)

MGP377

MGP378

10

5

0

400 650 900

f (MHz)

Fig.22

Conditions for Figs 20; 21 and 22: The graphs apply to either transistor section assuming class-AB push-pull operation.

Typical values; VCE= 25 V; I

= 0,1 A; PL= 17,5 W (P.E.P); Th=70°C.

C(ZS)

1998 Feb 09 20

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 8 leads SOT161A

D

A

F

U

1

q

scale

w

2

p

w

3

H

1

b

1

5

H

U

2

A

876

e

1

3

4

2

b

e

0 5 10 mm

B

C

M

C

c

E

w

M

AB

1

M

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

inches

A

2.04

7.27

mm

OUTLINE

VERSION

SOT161A 97-06-28

6.47

0.286

0.255

1.77

0.080

0.070

c

b

1

2.93

2.66

0.115

0.105

Db

E

e

10.22

10.00

0.402

0.394

10.22

10.00

0.402

0.394

3.80

3.50

0.138

0.150

REFERENCES

0.18

0.10

0.007

0.004

IEC JEDEC EIAJ

F

2.70

2.08

0.106

0.082

H

17.00

16.00

0.669

0.630

12.83

12.57

0.505

0.495

1

qw

18.42

U

1

10.34

24.97

10.08

24.71

0.407

0.983

0.397

0.973

EUROPEAN

PROJECTION

2

H

p

3.36

2.92

0.132

0.120

Q

4.32

4.06

0.170

0.160

1

1998 Feb 09 21

w

1

w

3

2

0.260.51 1.02

0.010.02 0.040.725

ISSUE DATE

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

DEFINITIONS

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1998 Feb 09 22

Philips Semiconductors Product speciﬁcation

UHF linear push-pull power transistor BLV57

NOTES

1998 Feb 09 23

Philips Semiconductors – a worldwide company

Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,

Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773

Belgium: see The Netherlands Brazil: seeSouth America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381

China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700

Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. +30 1 4894 339/239, Fax. +30 1 4814 240

Hungary: seeAustria India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966

Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO,

Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327

Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494

South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382

Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381

Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 625 344, Fax.+381 11 635 777

For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 125108/00/02/pp24 Date of release: 1998Feb 09 Document order number: 9397 750 03285